STMicroelectronics-STF23NM60ND
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STB23NM60ND, STF23NM60ND,
STP23NM60ND, STW23NM60ND
N-channel 600
V
,
0
.150
Ω
typ., 19.5 A, FDmesh™ II Power MOSFET
(with fast diode) in D²
P
A
K, TO-220F
P
,
T
O-220 and TO-247 packages
Datasheet — production data
Features
TAB
V
DSS
T
Jmax
@
R
DS(on)
max
Order codes
I
D
3
3
1
2
1
STB23NM60ND
STF23NM60ND
STP23NM60ND
STW23NM60ND
D²
P
A
K
TO-220FP
TAB
650 V
< 0.180
Ω
19.5 A
3
3
2
1
2
1
■
The worldwide best R
DS(on)
* area amongst the
TO-247
fast recovery diode devices
TO-220
■
100% avalanche tested
■
Low input capacitance and gate charge
■
Low gate input resistance
Figure 1.
Internal schematic diagram
$ꢅꢆꢇ
4
!
“ꢈ
■
High dv/dt and avalanche capabilities
Applications
■
Switching applications
‘ꢅꢁꢈ
Description
These FDmesh™ II Power MOSFETs with
intrinsic fast-recovery body diode are produced
using the second generation of MDmesh™
technology. Utilizing a new strip-layout vertical
structure, these revolutionary devices feature
extremely low on-resistance and superior
switching performance.
They are ideal for bridge
topologies and ZVS phase-shift converters.
3ꢅꢉꢈ
!-ꢀꢁꢂꢃꢄVꢁ
Table 1.
Device summary
Oreder codes
Marking
Package
Packaging
STB23NM60ND
STF23NM60ND
STP23NM60ND
STW23NM60ND
23NM60ND
23NM60ND
23NM60ND
23NM60ND
D²
P
A
K
TO-220FP
TO-220
T
a
pe and reel
T
u
be
TO-247
December 2012
Doc ID 14367 Rev 4
1/22
This is information on a product in full production.
22
Contents
STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
2/22
Doc ID 14367 Rev 4
STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Value
D²
P
A
K, TO-220,
Parameter
Unit
TO-220FP
TO-247
V
DS
V
GS
I
D
Drain-source voltage
600
25
V
V
Gate-source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
19.5
11.7
78
19.5
(1)
11.7
(1)
78
(1)
35
A
A
I
D
(2)
I
DM
A
P
TOT
I
AS
T
o
tal dissipation at T
C
= 25 °C
150
W
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
9
A
Single pulse avalanche energy
E
AS
700
40
mJ
(starting T
j
= 25 °C, I
D
= I
AS
, V
DD
= 50 V)
dv/dt
(3)
Peak diode recovery voltage slope
V/ns
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; T
C
= 25 °C)
V
ISO
2500
V
T
stg
T
j
Storage temperature
-55 to 150
150
°C
°C
Max. operating junction temperature
1. Limited
by maximum junction temperature
2. Pulse
width limited by safe operating area
3.
I
≤
19.5 A, di/dt
≤
600 A/µs, V
=80% V
V
< V
SD
DD
(BR)DSS, DS(peak)
(BR)DSS
T
a
ble 3.
Symbol
Thermal data
Parameter
D²
P
A
K TO-220FP TO-220 TO-247
Unit
R
thj-case
Thermal resistance junction-case max
R
thj-amb
Thermal resistance junction-amb max
R
thj-pcb
Thermal resistance junction-pcb max
(1)
1. When
mounted on 1 inch² FR-4, 2 Oz copper board.
0.83
3.6
0.83
°C/W
°C/W
°C/W
62.5
50
30
Doc ID 14367 Rev 4
3/22
Electrical characteristics
STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND
2
Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
T
a
ble 4.
Symbol
On/off states
Parameter
Test conditions
Min. Typ. Max. Unit
Drain-source breakdown
voltage
V
(BR)DSS
I
D
= 1 mA, V
GS
= 0
600
V
V
DD
= 480
V
,
I
D
= 19.5 A,
V
GS
= 10 V
dv/dt
(1)
Drain-source voltage slope
30
V/ns
V
DS
= 600
V
,
1
µA
µA
Zero gate voltage drain
I
DSS
current (V
GS
= 0)
V
DS
= 600
V
,
T
c
=125 °C
100
Gate body leakage current
I
GSS
V
GS
= 20
V
100
5
nA
V
(V
DS
= 0)
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250 µA
3
4
Static drain-source on
resistance
R
DS(on)
V
GS
= 10
V
,
I
D
= 10 A
0.150 0.180
Ω
1. Characteristic
value at turn off on inductive load
T
a
ble 5.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
Input capacitance
Output capacitance
C
iss
C
oss
C
rss
2100
80
pF
pF
pF
V
DS
= 50
V
, f
=
1 MHz,
GS
= 0
–
–
V
Reverse transfer
capacitance
10
Equivalent output
capacitance
(1)
C
oss eq.
V
GS
= 0, V
DS
= 0 to 480 V
–
–
310
4
–
–
pF
f=1 MHz Gate DC Bias=0
T
e
st signal level=20 mV
open drain
Rg
Gate input
resistance
Ω
Q
g
Q
gs
Q
gd
T
o
tal gate charge
Gate-source charge
Gate-drain charge
V
DD
= 480
V
,
I
D
= 19.5 A
V
GS
= 10 V
69
13
35
nC
nC
nC
–
–
1.
C
is defined as a constant equivalent capacitance giving the same charging time as C
when V
DS
oss eq.
oss
increases from 0 to 80% V
DSS
4/22
Doc ID 14367 Rev 4
STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND
Electrical characteristics
Min. Typ. Max.
Unit
T
a
ble 6.
Symbol
Switching times
Parameter
Test conditions
t
d(on)
t
r
t
d(off)
t
f
T
u
rn-on delay time
Rise time
21
19
92
42
ns
ns
ns
ns
V
DD
= 300
V
,
I
D
= 10 A,
R
G
= 4.7
Ω
,
V
GS
= 10 V
–
–
T
u
rn-off delay time
Fall time
T
a
ble 7.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
I
SD
Source-drain current
19.5
78
A
A
–
–
(1)
I
SDM
Source-drain current (pulsed)
(2)
V
SD
Forward on voltage
I
SD
= 19.5 A, V
GS
=0
SD
= 19.5 A, di/dt =100
1.3
V
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
190
1.2
13
ns
µC
A
I
A/µs, V
DD
= 60 V
Q
rr
–
–
I
RRM
V
DD
= 60 V
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
270
2.0
15
ns
µC
A
di/dt =100 A/µs, I
SD
= 19.5
A T
j
= 150 °C
Q
rr
I
RRM
1. Pulse
width limited by safe operating area
2. Pulsed:
pulse duration = 300µs, duty cycle 1.5%
Doc ID 14367 Rev 4
5/22
Electrical characteristics
STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND
2.1
Electrical characteristics (curves)
Safe operating area for D
2
P
A
K and
Figure 3.
Figure 2.
Thermal impedance for D
2
PAK and
TO-220
TO-220
Figure 4.
Safe operating area for TO-220FP
Figure 5.
Thermal impedance for TO-220FP
Figure 6.
Safe operating area for TO-247
Figure 7.
Thermal impedance for TO-247
6/22
Doc ID 14367 Rev 4
STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND
Electrical characteristics
Figure 8.
Output characteristics
Figure 9.
Transfer characteristics
AM14794v1
AM14795v1
I
D
(A)
I
D
(A)
V
G
S
=10V
V
D
S
= 20 V
50
40
3
0
20
50
40
7V
6V
3
0
20
5V
10
0
10
0
5
2
3
0
20 25
V
D
S
(V)
8
V
G
S
(V)
0
10
15
0
4
6
Figure 10.
Static drain-source on resistance
Figure 11.
Gate charge vs gate-source voltage
AM015
3
7v1
V
G
S
(V)
V
DD
=4
8
0V
I
D
=19.5A
12
10
8
6
4
2
0
40
8
0
0
20
60
Q
g
(nC)
Figure 12.
Capacitance variations
Figure 13.
Normalized gate threshold voltage
vs temperature
AM015
38
v1
C
(pF)
10000
1000
Ci
ss
100
10
1
Co
ss
Cr
ss
0.1
100
1
10
V
D
S
(V)
Doc ID 14367 Rev 4
7/22
Electrical characteristics
STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND
Figure 14.
Normalized on resistance vs
temperature
Figure 15.
Source-drain diode forward
characteristics
Figure 16.
Normalized B
VDSS
vs temperature
AM0902
8
v1
V
D
S
(norm)
I
D
=1mA
1.10
1.0
8
1.06
1.04
1.02
1.00
0.9
8
0.96
0.94
0.92
-50
-25
0
25 50
75
T
J
(°C)
100
8/22
Doc ID 14367 Rev 4
STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND
Test circuits
3
Test circuits
Figure 17.
Switching times test circuit for
resistive load
Figure 18.
Gate charge test circuit
V
DD
12V
47k
Ω
1k
Ω
100nF
2200
3
.
3
μ
F
R
L
μ
F
I
G
=CON
S
T
V
DD
100
Ω
V
i
=20V=V
GMAX
D.U.
T
.
V
G
V
D
R
G
V
G
S
2200
μ
F
D.U.
T
.
2.7k
Ω
47k
Ω
P
W
1k
Ω
P
W
AM0146
8
v1
AM01469v1
Figure 19.
Test circuit for inductive load
switching and diode recovery times
Figure 20.
Unclamped inductive load test
circuit
L
A
A
A
B
D
FA
S
T
DIODE
L=100
μ
H
V
D
G
2200
μ
F
D.U.
T
.
B
3
.
3
μ
F
V
DD
S
3
.
3
μ
F
1000
μ
F
B
V
DD
25
Ω
I
D
D
G
R
G
S
V
i
D.U.
T
.
P
w
AM01470v1
AM01471v1
Figure 21.
Unclamped inductive waveform
Figure 22.
Switching time waveform
t
on
td
on
t
off
td
off
V
(BR)D
SS
t
r
t
f
V
D
90
%
10
%
90
%
I
DM
10
%
V
D
S
I
D
0
0
V
DD
V
DD
90
%
V
G
S
10
%
AM01472v1
AM0147
3
v1
Doc ID 14367 Rev 4
9/22
Package mechanical data
STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECO
P
A
CK
®
packages, depending on their level of environmental compliance. ECO
P
ACK
®
ECO
P
A
CK
®
is an ST trademark.
10/22
Doc ID 14367 Rev 4
STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND
Package mechanical data
T
a
ble 8.
Dim.
D²
P
A
K (TO-263) mechanical data
Min.
mm
Typ.
Max.
A
A1
b
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
10
4.60
0.23
0.93
1.70
0.60
1.36
9.35
b2
c
c2
D
D1
E
10.40
E1
e
8.50
2.54
e1
H
4.88
15
5.28
15.85
2.69
2.79
1.40
1.75
J1
L
2.49
2.29
1.27
1.30
L1
L2
R
0.4
V2
0°
8°
Doc ID 14367 Rev 4
11/22
Package mechanical data
STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND
Figure 23.
D²
P
A
K (TO-263) drawing
0079457_T
Figure 24.
D²
P
A
K footprint
(a)
16.90
12.20
5.0
8
1.60
3
.50
9.75
Footprint
a. All
dimensions are in millimeters
12/22
Doc ID 14367 Rev 4
STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND
Package mechanical data
T
a
ble 9.
Dim.
TO-220FP mechanical data
Min.
mm
Typ.
Max.
A
B
4.4
2.5
4.6
2.7
D
2.5
2.75
0.7
E
0.45
0.75
1.15
1.15
4.95
2.4
F
1
F1
F2
G
1.70
1.70
5.2
G1
H
2.7
10
10.4
L2
L3
L4
L5
L6
L7
Dia
16
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
16.4
9.3
3
3.2
Doc ID 14367 Rev 4
13/22
Package mechanical data
STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND
Figure 25.
TO-220FP drawing
7012510_Rev_K_B
14/22
Doc ID 14367 Rev 4
STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND
T
a
ble 10.
TO-220 type A mechanical data
Package mechanical data
mm
Dim.
Min.
Typ.
Max.
A
b
4.40
0.61
1.14
0.48
15.25
4.60
0.88
1.70
0.70
15.75
b1
c
D
D1
E
1.27
10
10.40
2.70
5.15
1.32
6.60
2.72
14
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
∅
P
Q
3.50
3.93
16.40
28.90
3.75
2.65
3.85
2.95
Doc ID 14367 Rev 4
15/22
Package mechanical data
STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND
Figure 26.
TO-220 type A drawing
00159
88
_typeA_Rev_
S
16/22
Doc ID 14367 Rev 4
STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND
Table 11.
TO-247 mechanical data
Package mechanical data
mm.
Typ.
Dim.
Min.
Max.
A
A1
b
4.85
2.20
1.0
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
5.60
14.80
4.30
b1
b2
c
2.0
3.0
0.40
19.85
15.45
5.30
14.20
3.70
D
E
e
5.45
18.50
5.50
L
L1
L2
∅
P
∅
R
S
3.55
4.50
5.30
3.65
5.50
5.70
Doc ID 14367 Rev 4
17/22
Package mechanical data
STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND
Figure 27.
TO-247 drawing
0075
3
25_G
18/22
Doc ID 14367 Rev 4
STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND
Packaging mechanical data
5
Packaging mechanical data
Table 12.
D²
P
A
K (TO-263) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
Min.
Max.
A0
B0
D
10.5
15.7
1.5
10.7
15.9
1.6
A
B
C
D
G
N
T
330
1.5
12.8
20.2
24.4
100
13.2
26.4
30.4
D1
E
1.59
1.65
11.4
4.8
1.61
1.85
11.6
5.0
F
K0
P0
P1
P2
R
3.9
4.1
11.9
1.9
12.1
2.1
Base qty
Bulk qty
1000
1000
50
T
0.25
23.7
0.35
24.3
W
Doc ID 14367 Rev 4
19/22
Packaging mechanical data
Figure 28.
Tape
STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND
10 pitche
s
c
u
m
u
l
a
tive
toler
a
nce on t
a
pe +/- 0.2 mm
P0
P2
Top cover
D
T
t
a
pe
E
F
W
K0
B0
A0
D1
P1
U
s
er direction of feed
R
Bending r
a
di
us
U
s
er direction of feed
AM0
88
52v2
Figure 29.
Reel
T
REEL DIMEN
S
ION
S
40mm min.
Acce
ss
hole
At
s
l ot
loc
a
tion
B
D
C
N
A
G me
asu
red
a
t h
ub
F
u
ll r
a
di
us
T
a
pe
s
lot
in core for
t
a
pe
s
t
a
rt 25 mm min.
width
AM0
88
51v2
20/22
Doc ID 14367 Rev 4
STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND
Revision history
6
Revision history
T
a
ble 13.
Document revision history
Date
Revision
Changes
22-Jan-2008
11-Dec-2008
06-Oct-2010
1
2
3
First release
Document status promoted from preliminary data to datasheet.
– Minor text changes in cover page
– The part number STI23NM60ND has been moved to a
separate datasheet
18-Dec-2012
4
Doc ID 14367 Rev 4
21/22
STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND
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Doc ID 14367 Rev 4
