STMicroelectronics-STF26NM60N
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STF26NM60N
N-
channel 600 V, 0.135 Ω typ., 20 A MDmesh™ II
Power MOSFET in a TO-220FP package
Datasheet – production data
Features
Order code
V
DS
R
DS(on)
max
I
D
STF26NM60N
600 V
0.165 Ω
20 A
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Applications
TO-220FP
Switching applications
Description
Figure 1: Internal schematic diagram
This device is an N-channel Power MOSFET
developed using the second generation of
D(2)
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
G(1)
S(3)
AM01475v1_n
o
T
a
b_noZen
Table 1: Device summary
Order code
Marking
Package
Packaging
STF26NM60N
26NM60N
TO-220FP
Tube
December 2016
DocID030178 Rev 1
1/13
This is information on a product in full production.
Contents
STF26NM60N
Contents
2/13
DocID030178 Rev 1
STF26NM60N
Electrical ratings
1
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
V
DS
Parameter
Value
600
±30
20
Unit
V
Drain-source voltage
Gate-source voltage
V
GS
V
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
A
12.6
80
A
I
DM
A
P
TOT
Total dissipation at T
C
= 25 °C
35
W
V/ns
15
Insulation withstand voltage (RMS) from all three leads to external
heat sink
V
ISO
2500
V
(t = 1 s; T
C
= 25 °C)
T
stg
T
j
Storage temperature range
-55 to 150
°C
Operating junction temperature range
Notes:
(1)
Limited by package.
(2)
Pulse width limited by safe operating area.
(3)
I
≤ 20 A, di/dt ≤ 400 A/µs, V
DS(peak)
≤ V
(BR)DSS,
V
DD
≤ 80% V
(BR)DSS
SD
Table 3: Thermal data
Symbol
R
thj-case
R
thj-amb
Parameter
Thermal resistance junction-case
Thermal resistance junction-ambient
Value
3.6
Unit
°C/W
°C/W
62.5
Table 4: Avalanche characteristics
Symbol
Parameter
Value
Unit
Single pulse avalanche current (pulse width limited by T
jmax
)
I
AS
6
A
Single pulse avalanche energy
E
AS
610
mJ
(starting T
J
=25 °C, I
D
=I
AR
, V
DD
=50 V)
DocID030178 Rev 1
3/13
Electrical characteristics
STF26NM60N
2
Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
Table 5: On/off states
Symbol
Parameter
Drain-source
Test conditions
I
D
= 1 mA, V
GS
= 0 V
V
GS
= 0 V, V
DS
= 600 V
Min. Typ.
Max. Unit
V
(BR)DSS
600
V
breakdown voltage
1
Zero gate voltage drain
current
I
DSS
µA
V
GS
= 0 V, V
DS
= 600 V,
100
I
GSS
Gate-body leakage current
V
DS
= 0 V, V
GS
= ±25 V
±0.1
4
µA
V
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250 µA
2
3
Static drain-source on-
resistance
R
DS(on)
V
GS
= 10 V, I
D
= 10 A
0.135 0.165
Ω
Notes:
(1)
Defined by design, not subject to production test.
Table 6: Dynamic
Test conditions
Symbol
C
iss
Parameter
Input capacitance
Output capacitance
Min. Typ. Max. Unit
–
–
1800
115
–
–
pF
pF
V
DS
= 50 V, f = 1 MHz,
V
GS
= 0 V
C
oss
Reverse transfer
capacitance
C
rss
–
–
6
–
–
pF
pF
Equivalent output
capacitance
V
GS
= 0 V, V
DS
= 0 to 480 V
V
DD
= 480 V, I
D
= 20 A,
310
Q
g
Total gate charge
–
–
60
–
–
nC
nC
V
GS
= 10 V
Q
gs
Gate-source charge
8.5
Q
gd
R
G
Gate-drain charge
–
–
30
–
–
nC
Gate input resistance
f=1 MHz, I
D
=0 A
2.8
Ω
Notes:
(1)
C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DS
Table 7: Switching times
Test conditions
Symbol
Parameter
Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on delay time
Rise time
V
DD
= 300 V, I
D
= 10 A,
R
G
= 4.7 Ω, V
GS
= 10 V
–
–
–
13
25
85
–
–
–
ns
ns
ns
t
d(off)
Turn-off delay time
t
f
Fall time
–
50
–
ns
4/13
DocID030178 Rev 1
STF26NM60N
Symbol
Electrical characteristics
Min. Typ. Max. Unit
Table 8: Source-drain diode
Test conditions
Parameter
Source-drain current
–
–
20
80
A
A
Source-drain current
(pulsed)
t
rr
Forward on voltage
I
SD
= 20 A, V
GS
= 0 V
–
–
–
1.5
V
Reverse recovery time
Reverse recovery charge
I
SD
= 20 A, di/dt = 100 A/µs
370
5.8
ns
µC
V
DD
= 60 V
Q
rr
I
RRM
Reverse recovery current
–
31.6
A
t
rr
Reverse recovery time
I
SD
= 20 A, di/dt = 100 A/µs
–
–
450
7.5
ns
V
DD
= 60 V, T
j
= 150 °C (see
Q
rr
Reverse recovery charge
µC
I
RRM
Reverse recovery current
–
32.5
A
Notes:
(1)
Pulse width limited by package.
(2)
Pulse width limited by safe operating area.
(3)
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
DocID030178 Rev 1
5/13
Electrical characteristics
STF26NM60N
2.1
Electrical characteristics (curves)
Figure 3: Thermal impedance
Figure 2: Safe operating area
Figure 5: Transfer characteristics
Figure 4: Output characteristics
Figure 6: Gate charge vs gate-source voltage
Figure 7: Static drain-source on-resistance
W
6/13
DocID030178 Rev 1
STF26NM60N
Figure 8: Capacitance variations
Electrical characteristics
Figure 9: Source-drain diode forward characteristics
Figure 10: Normalized gate threshold voltage vs
temperature
Figure 11: Normalized on-resistance vs temperature
Figure 12: Normalized V
(BR)DSS
vs temperature
DocID030178 Rev 1
7/13
Test circuits
STF26NM60N
3
Test circuits
Figure 13: Test circuit for resistive load
switching times
Figure 14: Test circuit for gate charge
behavior
Figure 15: Test circuit for inductive load
switching and diode recovery times
Figure 16: Unclamped inductive load test
circuit
Figure 17: Unclamped inductive waveform
Figure 18: Switching time waveform
8/13
DocID030178 Rev 1
STF26NM60N
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
ECOPACK
®
is an ST trademark.
DocID030178 Rev 1
9/13
Package information
STF26NM60N
4.1
TO-220FP package information
Figure 19: TO-220FP package outline
10/13
DocID030178 Rev 1
STF26NM60N
Package information
Table 9: TO-220FP package mechanical data
mm
Dim.
Min.
4.4
Typ.
Max.
4.6
A
B
2.5
2.7
D
2.5
2.75
0.7
E
0.45
0.75
1.15
1.15
4.95
2.4
F
1
F1
F2
G
1.70
1.70
5.2
G1
H
2.7
10
10.4
L2
L3
L4
L5
L6
L7
Dia
16
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
16.4
9.3
3
3.2
DocID030178 Rev 1
11/13
Revision history
STF26NM60N
5
Revision history
Table 10: Document revision history
Changes
Date
Revision
13-Dec-2016
1
First release. Part number previously included in datasheet DocID15642
12/13
DocID030178 Rev 1
STF26NM60N
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