STMicroelectronics-STF26NM60ND
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STB26NM60ND, STF26NM60ND,
STP26NM60ND, STW26NM60ND
N-channel 600
V
,
0
.145
Ω
typ., 21 A, FDmesh™ II Power MOSFE
T
s
in D²PAK, TO-220F
P
,
T
O-220 and TO-247 packages
Datasheet
–
production data
Features
TAB
Order codes
V
DS
@ T
jmax
R
DS(on)
max
I
D
3
1
STB26NM60ND
STF26NM60ND
STP26NM60ND
STW26NM60ND
2
3
D PAK
2
1
650 V
0.175
21 A
TO-220FP
TAB
•
100% avalanche tested
3
3
•
Low input capacitance and gate charge
•
Low gate input resistance
2
2
1
1
TO-220
TO-247
•
Extremely high dv/dt and avalanche
Figure 1.
Internal schematic diagram
capabilities
Applications
‘ꢀ7$%ꢁꢂꢃꢄ
•
Switching applications
Description
*ꢀꢅꢄ
These FDmesh™ II Power MOSFE
T
s
w
ith
intrinsic fast-recovery body diode are produced
using the second generation of MDmesh™
technology. Utilizing a new strip-layout vertical
structure, these revolutionary devices feature
extremely low on-resistance and superior
switching performance. They are ideal for bridge
topologies and ZVS phase-shift converters.
6ꢀꢆꢄ
!-ꢀꢁꢂꢃꢄVꢁ
Table 1. Device summary
Order codes
Marking
Packages
Packaging
STB26NM60ND
STF26NM60ND
STP26NM60ND
STW26NM60ND
D²PAK
TO-220FP
TO-220
T
a
pe and reel
26NM60ND
Tube
TO-247
November 2013
DocID025283 Rev 1
1/23
This is information on a product in full production.
Contents
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
2/23
DocID025283 Rev 1
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Value
Symbol
Parameter
Unit
D
2
PAK, TO-220,
TO-220FP
TO-247
V
DS
V
GS
I
D
Drain-source voltage
600
±25
V
V
Gate-source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
21
13
21
(1)
13
(1)
84(1)
35
A
A
I
D
(2)
I
DM
84
A
P
TOT
T
o
tal dissipation at T
C
= 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
190
W
dv/dt
(3)
dv/dt
(4)
40
40
V/ns
V/ns
Insulation withstand voltage (RMS) from
all three leads to external heat sink
V
ISO
2500
V
(t=1 s;T
C
=25 °C)
T
stg
T
J
Storage temperature
–55 to 150
150
°C
°C
Max. operating junction temperature
1. Limited
only by maximum temperature allowed
2. Pulse
width limited by safe operating area
3.
4.
I
≤
21 A, di/dt
≤
400 A/µs, V
= 80% V
(BR)DSS
SD
DD
V
≤
480 V
DS
Table 3. Thermal data
D²PAK TO-220FP
Value
TO-220
Symbol
Parameter
Unit
TO-247
Thermal resistance junction-
case max
R
thj-case
R
thj-amb
0.66
3.57
0.66
°C/W
°C/W
°C/W
Thermal resistance junction-
ambient max
62.5
50
Thermal resistance junction-
pcb max
(1)
R
thj-pcb
30
1. When
mounted on 1inch² FR-4 board, 2 oz Cu
DocID025283 Rev 1
3/23
23
Electrical ratings
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
Table 4. Avalanche characteristics
Symbol
Parameter
Value
Unit
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
J
max)
I
AR
4
A
Single pulse avalanche energy
E
AS
100
mJ
(starting T
J
= 25 °C, I
D
= I
AS
, V
DD
= 50 V)
4/23
DocID025283 Rev 1
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
Electrical characteristics
2
Electrical characteristics
(T
CASE
=25 °C unless otherwise specified).
Table 5. On/off states
Value
Unit
Symbol
Parameter
Test conditions
Min.
Typ. Max.
Drain-source
V
(BR)DSS
I
D
= 1 mA, V
GS
= 0
V
DS
= 600 V
600
V
breakdown voltage
Zero gate voltage
1
µA
µA
I
DSS
drain current (V
GS
= 0)
V
DS
= 600 V @T
C
= 125 °C
100
Gate-body leakage
current (V
DS
= 0)
I
GSS
V
GS
= ± 25 V
±100
nA
V
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10
V
,
I
D
= 10.5 A
3
4
5
R
DS(on)
Static drain-source
on- resistance
0.145 0.175
Ω
Table 6. Dynamic
Test conditions
Symbol
Parameter
Min. Typ. Max.
Unit
C
iss
Input capacitance
Output capacitance
–
–
1817
90
–
–
pF
pF
V
DS
= 100 V, f = 1 MHz,
C
oss
V
GS
= 0
Reverse transfer
capacitance
C
rss
–
–
4.4
–
–
pF
pF
Equivalent output
capacitance
(1)
C
oss eq.
V
GS
= 0, V
DS
= 0 to 480 V
270
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
–
–
–
–
–
–
–
–
22
14.5
69
–
ns
ns
ns
ns
nC
nC
nC
Ω
V
DD
= 300
V
, I
D
= 10.5 A
R
G
= 4.7
Ω
V
GS
= 10 V
–
Turn-off delay time
Fall time
–
27.5
54.6
9.1
–
Q
g
T
o
tal gate charge
Gate-source charge
Gate-drain charge
Intrinsic gate resistance
–
V
DD
= 480
V
, I
D
= 21 A,
Q
gs
Q
gd
R
g
V
GS
= 10
V
,
–
32.5
2.5
–
f = 1 MHz, I
D
= 0
–
1.
C
. is defined as a constant equivalent capacitance giving the same charging time as C
when V
oss eq
oss
DS
increases from 0 to 80% V
DSS
DocID025283 Rev 1
5/23
23
Electrical characteristics
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
I
SD
Source-drain current
–
–
–
–
–
–
–
–
21
84
A
A
(1)
I
SDM
Source-drain current (pulsed)
Forward on voltage
(2)
V
SD
t
rr
I
SD
= 21 A, V
GS
= 0
1.6
V
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
170
1.39
14
ns
µC
A
I
SD
= 21 A, V
DD
= 60 V
di/dt=100 A/µs
Q
rr
I
RRM
t
rr
I
SD
= 21 A,V
DD
= 60 V
di/dt=100 A/µs,
230
2.24
ns
µC
Q
rr
T
J
= 150 °C
I
RRM
Reverse recovery current
–
18
A
1. Pulse
width limited by safe operating area
2. Pulsed:
Pulse duration = 300 µs, duty cycle 1.5%.
6/23
DocID025283 Rev 1
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
Electrical characteristics
2.1
Electrical characteristics (curves)
Figure 2. Safe operating area for D²PAK and
TO-220
Figure 3. Thermal impedance for D²PAK and
TO-220
AM15518v1
I
D
(A)
10µs
100µs
10
1ms
10ms
1
Tj=150°C
Tc=25°C
Single
pulse
0.1
0.1
10
V
DS
(V)
1
100
Figure 4. Safe operating area for TO-220FP
Figure 5. Thermal impedance for TO-220FP
AM16149v1
I
D
(A)
10
10µs
100µs
1ms
1
10ms
Tj=150°C
Tc=25°C
0.1
Single
pulse
0.01
10
V
DS
(V)
0.1
1
100
Figure 6. Safe operating area for TO-247
Figure 7. Thermal impedance for TO-247
AM15519v1
I
D
(A)
10µs
10
100µs
1ms
10ms
1
Tj=150°C
Tc=25°C
Single
pulse
0.1
0.1
10
V
DS
(V)
1
100
DocID025283 Rev 1
7/23
23
Electrical characteristics
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
Figure 8. Output characteristics
Figure 9. Transfer characteristics
AM16017v1
AM16018v1
I
D
(A)
I
D
(A)
50
8V
V
GS
=9, 10V
V
DS
=18V
50
40
30
20
10
0
40
30
7V
20
10
0
6V
5V
2
V
DS
(V)
8
10
V
GS
(V)
0
4
6
0
5
10
15
20
Figure 10. Static drain-source on-resistance
Figure 11. Gate charge vs gate-source voltage
AM16019v1
AM16020v1
V
(V)
GS
R
DS(on)
(
Ω
)
V
DS
(V)
V
DD
=480V
=21A
V
GS
=10V
0.150
0.148
0.146
0.144
0.142
0.140
12
I
D
V
DS
500
10
8
400
300
200
100
6
4
2
0
0.138
0.136
0
(nC)
6
14
30
60
2
4
8
10 12
16
I
D
(A)
40
50
Q
g
0
0
10
20
Figure 12. Capacitance variations
Figure 13. Normalized gate threshold voltage vs
temperature
AM16021v1
AM16034v1
V
GS(th)
C
(pF)
(norm)
I
= 250 µA
D
1.10
10000
1.00
0.90
Ciss
1000
100
Coss
Crss
0.80
0.70
10
1
0.1
100
-50
1
10
V
DS
(V)
-25
0
25 50 75
T
J
(°C)
100
8/23
DocID025283 Rev 1
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
Electrical characteristics
Figure 14. Normalized on-resistance vs
temperature
Figure 15. Source-drain diode forward
characteristics
AM16035v1
AM16037v1
R
DS(on)
V
SD
(norm)
(V)
I
D
= 10.5 A
V
GS
= 10 V
2.1
T
J
=-50°C
1.0
1.9
1.7
1.5
1.3
1.1
1.2
1
0.8
0.6
0.4
T
J
=150°C
T
J
=25°C
0.9
0.2
0
0.7
0.5
-50
0
10 12
18
14 16
I
SD
(A)
-25
0
25 50 75
T
J
(°C)
2
4
6
8
100
Figure 16. Normalized V
DS
vs temperature
Figure 17. Output capacitance stored energy
AM10636v1
AM16033v1
V
DS
E
oss
(norm)
1.09
1.07
1.05
(µJ)
10
9
I
D
= 1mA
8
7
6
5
4
1.03
1.01
0.99
0.97
0.95
0.93
0.91
3
2
1
0
0
-50
200
400 500
-25
0
25 50 75
T
J
(°C)
100
300
600
V
DS
(V)
100
DocID025283 Rev 1
9/23
23
Test circuits
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
3
Test circuits
Figure 18. Switching times test circuit for
resistive load
Figure 19. Gate charge test circuit
V
DD
12V
47k
Ω
1k
Ω
100nF
2200
μ
F
3.3
μ
F
R
L
I
G
=CONST
V
DD
100
Ω
V
i
=20V=V
GMAX
D.U.T.
V
D
R
G
V
GS
2200
μ
F
D.U.T.
V
G
2.7k
Ω
47k
Ω
P
W
1k
Ω
P
W
AM01468v1
AM01469v1
Figure 20. Test circuit for inductive load
switching and diode recovery times
Figure 21. Unclamped inductive load test circuit
L
A
A
A
B
D
S
FAST
DIODE
L=100
μ
H
V
D
G
2200
μ
F
D.U.T.
B
3.3
μ
F
V
DD
3.3
μ
F
1000
μ
F
B
V
DD
25
Ω
I
D
D
G
R
G
S
V
i
D.U.T.
P
w
AM01470v1
AM01471v1
Figure 22. Unclamped inductive waveform
Figure 23. Switching time waveform
t
on
td
on
t
off
td
off
V
(BR)DSS
t
r
t
f
V
D
90%
10%
90%
I
DM
10%
V
GS
V
DS
I
D
0
0
V
DD
V
DD
90%
10%
AM01473v1
AM01472v1
10/23
DocID025283 Rev 1
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
ECOPACK
®
is an ST trademark.
DocID025283 Rev 1
11/23
23
Package mechanical data
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
Table 8. D²PAK (TO-263) mechanical data
mm
Dim.
Min.
Typ.
Max.
A
A1
b
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
10
4.60
0.23
0.93
1.70
0.60
1.36
9.35
b2
c
c2
D
D1
E
10.40
E1
e
8.50
2.54
e1
H
4.88
15
5.28
15.85
2.69
2.79
1.40
1.75
J1
L
2.49
2.29
1.27
1.30
L1
L2
R
0.4
V2
0°
8°
12/23
DocID025283 Rev 1
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
Package mechanical data
Figure 24. D²PAK (TO-263) drawing
0079457_T
Figure 25. D²PAK footprint
(a)
16.90
12.20
5.08
1.60
3.50
9.75
Footprint
a. All
dimension are in millimeters
DocID025283 Rev 1
13/23
23
Package mechanical data
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
Table 9. TO-220FP mechanical data
mm
Dim.
Min.
Typ.
Max.
A
B
4.4
2.5
4.6
2.7
D
2.5
2.75
0.7
E
0.45
0.75
1.15
1.15
4.95
2.4
F
1
F1
F2
G
1.70
1.70
5.2
G1
H
2.7
10
10.4
L2
L3
L4
L5
L6
L7
Dia
16
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
16.4
9.3
3
3.2
14/23
DocID025283 Rev 1
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
Figure 26. TO-220FP drawing
Package mechanical data
7012510_Rev_K_B
DocID025283 Rev 1
15/23
23
Package mechanical data
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
Table 10. TO-220 type A mechanical data
mm
Dim.
Min.
Typ.
Max.
A
b
4.40
0.61
1.14
0.48
15.25
4.60
0.88
1.70
0.70
15.75
b1
c
D
D1
E
1.27
10
10.40
2.70
5.15
1.32
6.60
2.72
14
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
3.50
3.93
16.40
28.90
∅
Q
P
3.75
2.65
3.85
2.95
16/23
DocID025283 Rev 1
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
Figure 27. TO-220 type A drawing
Package mechanical data
ꢀꢀꢁꢄꢅꢆꢆ?TYPE!?2EV?4
DocID025283 Rev 1
17/23
23
Package mechanical data
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
Table 11. TO-247 mechanical data
mm.
Dim.
Min.
Typ.
Max.
A
A1
b
4.85
2.20
1.0
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
5.60
14.80
4.30
b1
b2
c
2.0
3.0
0.40
19.85
15.45
5.30
14.20
3.70
D
E
e
5.45
18.50
5.50
L
L1
L2
∅
P
∅
R
S
3.55
4.50
5.30
3.65
5.50
5.70
18/23
DocID025283 Rev 1
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
Figure 28. TO-247 drawing
Package mechanical data
0075325_G
DocID025283 Rev 1
19/23
23
Packing mechanical data
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
5
Packing mechanical data
Table 12. D²PAK (TO-263) tape and reel mechanical data
Tape Reel
mm
mm
Dim.
Dim.
Min.
Max.
Min.
Max.
A0
B0
D
10.5
15.7
1.5
10.7
15.9
1.6
A
B
C
D
G
N
T
330
1.5
12.8
20.2
24.4
100
13.2
26.4
30.4
D1
E
1.59
1.65
11.4
4.8
1.61
1.85
11.6
5.0
F
K0
P0
P1
P2
R
3.9
4.1
11.9
1.9
12.1
2.1
Base qty
Bulk qty
1000
1000
50
T
0.25
23.7
0.35
24.3
W
20/23
DocID025283 Rev 1
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
Figure 29. Tape
Packing mechanical data
10 pitches cumulative
tolerance on tape +/- 0.2 mm
P0
Top cover
tape
P2
D
T
E
F
W
K0
B1
B0
For machine ref. only
including draft and
A0
D1
P1
radii concentric around B0
User direction of feed
R
Bending radius
User direction of feed
AM08852v1
Figure 30. Reel
T
REEL DIMENSIONS
40mm min.
Access hole
At slot location
B
D
C
N
A
G measured at hub
Full radius
Tape slot
in core for
tape start 25 mm min.
width
AM08851v2
DocID025283 Rev 1
21/23
23
Revision history
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
6
Revision history
Table 13. Document revision history
Date
Revision
Changes
23-Sep-2013
1
First release.
– Modified: I
D
value in cover page
– Modified: R
thj-case
values
28-Nov-2013
2
– Minor text changes
22/23
DocID025283 Rev 1
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
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