STMicroelectronics-STF32NM50N
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STB32NM50N, STF32NM50N,
STP32NM50N, STW32NM50N
N-channel 500
V
,
0
.1
Ω
typ., 22 A MDmesh™ II Power MOSFET
in D²
P
A
K, TO-220F
P
,
T
O-220, TO-247 packages
Datasheet — production data
Features
TAB
R
DS(on)
max.
Order codes
V
DS
I
D
P
TOT
2
1
3
3
2
STB32NM50N
STF32NM50N
STP32NM50N
STW32NM50N
190 W
35 W
1
D²
P
AK
TO-220FP
500 V
0.13
Ω
22 A
190 W
190 W
T
A
B
■
100% avalanche tested
3
3
■
Low input capacitance and gate charge
■
Low gate input resistance
2
2
1
1
TO-220
TO-247
Applications
■
Switching applications
Figure 1.
Internal schematic diagram
Description
$ꢅꢆ OR
4
!
“ꢇ
These devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh™ technolog
y
.
T
his revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
‘ꢅꢁꢇ
3ꢅꢈꢇ
!-ꢀꢁꢂꢃꢄVꢁ
Table 1.
Device summary
Order codes
Marking
Package
D
2
P
A
K
Packaging
STB32NM50N
STF32NM50N
STP32NM50N
STW32NM50N
T
a
pe and reel
T
u
be
TO-220FP
TO-220
32NM50N
T
u
be
TO-247
T
u
be
August 2012
Doc ID 023436 Rev 1
1/21
This is information on a product in full production.
21
Contents
STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
2/21
Doc ID 023436 Rev 1
STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Value
D²
P
A
K, TO-220,
Parameter
Unit
TO-220FP
TO-247
V
DS
V
GS
I
D
Drain-source voltage
500
25
V
V
Gate- source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
22
13.86
88
22
(1)
13.86
(1)
88
A
A
I
D
(2)
I
DM
A
P
TOT
I
AR
T
o
tal dissipation at T
C
= 25 °C
190
35
W
Avalanche current, repetitive or not-
repetitive (pulse width limited by T
J
max)
7
A
Single pulse avalanche energy
E
AS
340
15
mJ
(starting T
J
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
dv/dt
(3)
Peak diode recovery voltage slope
V/ns
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t = 1 s; T
C
= 25 °C)
V
ISO
2500
V
T
stg
T
J
Storage temperature
– 55 to 150
150
°C
Max. operating junction temperature
1. Limited
by maximum junction temperature.
2. Pulse
width limited by safe operating area.
3.
I
≤
22 A, di/dt
≤
400 A/µs, V
peak
≤
V
, V
≤
80% V
(BR)DSS
SD
DS
(BR)DSS
DD
T
a
ble 3.
Symbol
Thermal data
Parameter
D²
P
A
K TO-220FP
TO-220 TO-247
Unit
R
thj-case
Thermal resistance junction-case max
0.66
3.6
0.66
R
thj-amb
Thermal resistance junction-ambient max
62.5
50
°C/W
(1)
R
thj-pcb
Thermal resistance junction-pcb max
30
1. When
mounted on FR-4 board of 1 inch², 2 oz Cu.
Doc ID 023436 Rev 1
3/21
Electrical characteristics
STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N
2
Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
T
a
ble 4.
Symbol
On/off states
Parameter
Value
Test conditions
Unit
Min.
Typ. Max.
Drain-source
V
(BR)DSS
I
D
= 1 mA
500
V
breakdown voltage
(V
GS
= 0)
Zero gate voltage
V
DS
= 500 V
DS
= 500
V
,
T
C
= 125 °C
1
µA
µA
I
DSS
drain current (V
GS
= 0)
V
100
Gate-body leakage
current (V
DS
= 0)
I
GSS
V
GS
=
25 V
100
nA
V
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10
V
,
I
D
= 11 A
2
3
4
Static drain-source
R
DS(on)
0.1
0.13
Ω
on-resistance
T
a
ble 5.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max.
Unit
Input capacitance
Output capacitance
C
iss
C
oss
C
rss
1973
pF
pF
pF
V
DS
= 50
V
, f = 1
M
Hz,
V
GS
= 0
–
–
–
179
9.7
–
–
–
Reverse transfer
capacitance
Equivalent output
capacitance
(1)
C
oss eq.
V
GS
= 0, V
DS
= 0 to 400 V
325
pF
t
d(on)
t
r
t
d(off)
t
f
T
u
rn-on delay time
Rise time
V
DD
=250
V
,
I
D
= 11 A
R
G
= 4.7
Ω
,
V
GS
= 10 V
21.5
9.5
ns
ns
ns
ns
T
u
rn-off delay time
Fall time
110
23.6
Q
g
Q
gs
Q
gd
T
o
tal gate charge
Gate-source charge
Gate-drain charge
V
DD
= 400
V
,
I
D
= 22 A,
V
GS
= 10
V
,
62.5
8.6
33
nC
nC
nC
–
–
–
f=1MHz Gate DC Bias=0
T
e
st signal level=20 mV
Open drain
R
g
Gate input resistance
3.8
–
Ω
1.
C
. is defined as a constant equivalent capacitance giving the same charging time as C
when V
oss eq
oss
DS
increases from 0 to 80% V
DSS
4/21
Doc ID 023436 Rev 1
STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N
Electrical characteristics
Min. Typ. Max. Unit
T
a
ble 6.
Symbol
Source drain diode
Parameter
Test conditions
I
SD
Source-drain current
22
88
A
A
–
–
(1)
I
SDM
Source-drain current (pulsed)
(2)
V
SD
Forward on voltage
I
SD
= 22 A, V
GS
= 0
1.6
V
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
328
5
ns
nC
A
I
SD
= 22 A, V
DD
= 60 V
di/dt=100 A/µs
Q
rr
–
–
I
RRM
30.5
I
SD
= 22 A,V
DD
= 60 V
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
392
6.5
ns
nC
A
di/dt=100 A/µs,
Q
rr
T
J
= 150 °C
I
RRM
32.8
1. Pulse
width limited by safe operating area.
2. Pulsed:
Pulse duration = 300 µs, duty cycle 1.5%.
Doc ID 023436 Rev 1
5/21
Electrical characteristics
STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N
2.1
Electrical characteristics (curves)
Safe operating area
for D
2
P
A
K and
Figure 3.
Figure 2.
Thermal impedance for for D
2
P
A
K
and TO-220
TO-220
AM1
3
0
8
7v1
I
D
(A)
Tj=150°C
Tc=25°C
S
ingle p
u
l
s
e
10
µs
100
µs
10
1m
s
10m
s
1
0.1
10
V
D
S
(V)
0.1
1
100
Figure 4.
Safe operating area
for TO-220FP
Figure 5.
Thermal impedance for TO-220FP
AM1
3
0
88
v1
I
D
(A)
Tj=150°C
Tc=25°C
S
ingle p
u
l
s
e
10
10
µs
100
µs
1m
s
1
10m
s
0.1
0.01
10
V
D
S
(V)
0.1
1
100
Figure 6.
Safe operating area for TO-247
Figure 7.
Thermal impedance for TO-247
AM1
3
0
8
9v1
I
D
(A)
Tj=150°C
Tc=25°C
S
ingle p
u
l
s
e
10
µs
100
µs
1m
s
10
10m
s
1
0.1
10
V
D
S
(V)
0.1
1
100
6/21
Doc ID 023436 Rev 1
STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N
Electrical characteristics
Figure 8.
Output characteristics
Figure 9.
Transfer characteristics
AM1
3
090v1
AM1
3
091v1
I
D
(A)
60
50
40
3
0
20
I
D
(A)
V
G
S
=10V
V
D
S
=21V
60
50
6V
40
3
0
5V
4V
20
10
0
10
0
5
2
20
25
3
0
V
D
S
(V)
8
10
V
G
S
(V)
0
10
15
0
4
6
Figure 10.
Gate charge vs gate-source voltage
Figure 11.
Static drain-source on-resistance
AM1
3
092v1
AM1
3
09
3
v1
V
(V)
G
S
R
D
S
(on)
(
Ω
)
D
S
(V)
V
V
D
S
V
G
S
=10V
V
DD
=400V
=22A
400
3
50
3
00
250
200
150
100
12
I
D
0.104
10
8
0.102
0.100
6
0.09
8
0.096
0.094
4
2
0
50
0
10
15
20
5
20
40
50 60
Q
g
(nC)
I
D
(A)
0
10
3
0
0
Figure 12.
Capacitance variations
Figure 13.
Output capacitance stored energy
AM1490
3
v1
AM14904v1
C
(pF)
E
o
ss
(
µ
J)
10
9
8
7
6
10000
1000
100
Ci
ss
5
4
Co
ss
Cr
ss
3
2
1
0
10
1
0.1
100
200
400 500
1
10
V
D
S
(V)
0
100
3
00
V
D
S
(V)
Doc ID 023436 Rev 1
7/21
Electrical characteristics
STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N
Figure 14.
Normalized gate threshold voltage
Figure 15.
Normalized on-resistance vs
vs temperature
temperature
AM14905v1
AM14906v1
V
G
S
(th)
(norm)
R
D
S
(on)
(norm)
I
D
=250
µ
A
I
D
=11A
1.10
1.00
0.90
2.1
1.9
1.7
1.5
1.
3
1.1
0.9
0.
8
0
0.7
0.5
-50
-25
0.70
-50
-25
0
25 50 75
T
J
(°C)
0
25 50 75
T
J
(°C)
100
100
Figure 16.
Normalized V
DS
vs temperature
Figure 17.
Source-drain diode forward
characteristics
AM0902
8
v1
AM1490
8
v1
V
D
S
V
S
D
(V)
(norm)
I
D
=1mA
1.10
1.4
T
J
=-50°C
1.0
8
1.2
1.0
0.
8
0.6
1.06
T
J
=25°C
1.04
1.02
1.00
0.9
8
0.96
T
J
=150°C
0.4
0.2
0
0.94
0.92
-50
0
-25
0
25 50
75
T
J
(°C)
2
4
6
8
10 12 14
1
8
20
I
S
D
(A)
22
100
16
8/21
Doc ID 023436 Rev 1
STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N
Test circuits
3
Test circuits
Figure 18.
Switching times test circuit for
resistive load
Figure 19.
Gate charge test circuit
V
DD
12V
47k
Ω
1k
Ω
100nF
2200
3
.
3
μ
F
R
L
μ
F
I
G
=CON
S
T
V
DD
100
Ω
V
i
=20V=V
GMAX
D.U.
T
.
V
G
V
D
R
G
V
G
S
2200
μ
F
D.U.
T
.
2.7k
Ω
47k
Ω
P
W
1k
Ω
P
W
AM0146
8
v1
AM01469v1
Figure 20.
Test circuit for inductive load
switching and diode recovery times
Figure 21.
Unclamped inductive load test
circuit
L
A
A
A
B
D
FA
S
T
DIODE
L=100
μ
H
V
D
G
2200
μ
F
D.U.
T
.
B
3
.
3
μ
F
V
DD
S
3
.
3
μ
F
1000
μ
F
B
V
DD
25
Ω
I
D
D
G
R
G
S
V
i
D.U.
T
.
P
w
AM01470v1
AM01471v1
Figure 22.
Unclamped inductive waveform
Figure 23.
Switching time waveform
t
on
t
off
td
off
V
(BR)D
SS
t
r
t
f
td
on
V
D
90
%
10
%
90
%
I
DM
10
%
V
D
S
I
D
0
0
V
DD
V
DD
90
%
V
G
S
10
%
AM01472v1
AM0147
3
v1
Doc ID 023436 Rev 1
9/21
Package mechanical data
STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECO
P
A
CK® packages, depending on their level of environmental compliance. ECO
P
ACK®
ECO
P
A
CK® is an ST trademark.
T
a
ble 7.
Dim.
D²
P
A
K (TO-263) mechanical data
mm
Min.
Typ.
Max.
A
A1
b
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
10
4.60
0.23
0.93
1.70
0.60
1.36
9.35
b2
c
c2
D
D1
E
10.40
E1
e
8.50
2.54
e1
H
4.88
15
5.28
15.85
2.69
2.79
1.40
1.75
J1
L
2.49
2.29
1.27
1.30
L1
L2
R
0.4
V2
0°
8°
10/21
Doc ID 023436 Rev 1
STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N
Figure 24.
D²
P
A
K (TO-263) drawing
Package mechanical data
0079457_T
Figure 25.
D²
P
A
K footprint
(a)
16.90
12.20
5.0
8
1.60
3
.50
9.75
Footprint
a. All
dimensions are in millimeters
Doc ID 023436 Rev 1
11/21
Package mechanical data
STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N
T
a
ble 8.
Dim.
TO-220FP mechanical data
mm
Min.
Typ.
Max.
A
B
4.4
2.5
4.6
2.7
D
2.5
2.75
0.7
E
0.45
0.75
1.15
1.15
4.95
2.4
F
1
F1
F2
G
1.70
1.70
5.2
G1
H
2.7
10
10.4
L2
L3
L4
L5
L6
L7
Dia
16
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
16.4
9.3
3
3.2
12/21
Doc ID 023436 Rev 1
STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N
Figure 26.
TO-220FP drawing
Package mechanical data
7012510_Rev_K_B
Doc ID 023436 Rev 1
13/21
Package mechanical data
STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N
T
a
ble 9.
Dim.
TO-220 type A mechanical data
mm
Min.
Typ.
Max.
A
b
4.40
0.61
1.14
0.48
15.25
4.60
0.88
1.70
0.70
15.75
b1
c
D
D1
E
1.27
10
10.40
2.70
5.15
1.32
6.60
2.72
14
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
∅
P
Q
3.50
3.93
16.40
28.90
3.75
2.65
3.85
2.95
14/21
Doc ID 023436 Rev 1
STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N
Figure 27.
TO-220 type A drawing
Package mechanical data
00159
88
_typeA_Rev_
S
Doc ID 023436 Rev 1
15/21
Package mechanical data
STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N
Table 10.
TO-247 mechanical data
Dim.
mm.
Typ.
Min.
Max.
A
A1
b
4.85
2.20
1.0
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
5.60
14.80
4.30
b1
b2
c
2.0
3.0
0.40
19.85
15.45
5.30
14.20
3.70
D
E
e
5.45
18.50
5.50
L
L1
L2
∅
P
∅
R
S
3.55
4.50
5.30
3.65
5.50
5.70
16/21
Doc ID 023436 Rev 1
STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N
Figure 28.
TO-247 drawing
Package mechanical data
0075
3
25_G
Doc ID 023436 Rev 1
17/21
Packaging mechanical data
STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N
5
Packaging mechanical data
Table 11.
D²
P
A
K (TO-263) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
Min.
Max.
A0
B0
D
10.5
15.7
1.5
10.7
15.9
1.6
A
B
C
D
G
N
T
330
1.5
12.8
20.2
24.4
100
13.2
26.4
30.4
D1
E
1.59
1.65
11.4
4.8
1.61
1.85
11.6
5.0
F
K0
P0
P1
P2
R
3.9
4.1
11.9
1.9
12.1
2.1
Base qty
Bulk qty
1000
1000
50
T
0.25
23.7
0.35
24.3
W
18/21
Doc ID 023436 Rev 1
STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N
Packaging mechanical data
Figure 29.
Tape
10 pitche
s
c
u
m
u
l
a
tive
toler
a
nce on t
a
pe +/- 0.2 mm
P0
P2
Top cover
D
T
t
a
pe
E
F
W
K0
B0
A0
D1
P1
U
s
er direction of feed
R
Bending r
a
di
us
U
s
er direction of feed
AM0
88
52v2
Figure 30.
Reel
T
REEL DIMEN
S
ION
S
40mm min.
Acce
ss
hole
At
s
l ot
loc
a
tion
B
D
C
N
A
G me
asu
red
a
t h
ub
F
u
ll r
a
di
us
T
a
pe
s
lot
in core for
t
a
pe
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Doc ID 023436 Rev 1
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Revision history
STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N
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Revision history
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Document revision history
Date
Revision
Changes
01-Aug-2012
1
Initial release.
20/21
Doc ID 023436 Rev 1
STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N
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