STMicroelectronics-STF35N65DM2
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STF35N65DM2
N-
channel 650 V, 0.093 Ω typ., 32 A MDmesh™ DM2
Power MOSFET in a TO-220FP package
Datasheet – production data
Features
Order code
V
DS
R
DS(on)
max.
I
D
P
TOT
STF35N65DM2 650
V
0.110 Ω
32 A
40 W
Fast-recovery body diode
Extremely low gate charge and input
capacitance
Low on-resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
TO-220FP
Figure 1: Internal schematic diagram
Applications
D(2)
Switching applications
Description
This high voltage N-channel Power MOSFET is
part
of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Q
rr
)
and time (t
rr
) combined with low R
DS(on)
, rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
G(1)
S(3)
AM15572v1_no_tab
Table 1: Device summary
Order code
Marking
Package
Packing
STF35N65DM2
35N65DM2
TO-220FP
Tube
December 2017
DocID030873 Rev 2
1/13
This is information on a product in full production.
Contents
STF35N65DM2
Contents
2/13
DocID030873 Rev 2
STF35N65DM2
Electrical ratings
1
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
±25
32
Unit
V
GS
Gate-source voltage
V
Drain current (continuous) at T
case
= 25 °C
Drain current (continuous) at T
case
= 100 °C
Drain current (pulsed)
I
D
A
20
90
A
P
TOT
Total dissipation at T
case
= 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
40
W
50
V/ns
kV
50
Insulation withstand voltage (RMS) from all three leads to external
heat-sink (t = 1 s; T
c
= 25 °C)
V
ISO
2.5
T
stg
T
j
Storage temperature range
-55 to 150
°C
Operating junction temperature range
Notes:
(1)
Pulse width is limited by safe operating area.
(2)
I
≤ 32 A, di/dt=900 A/μs, V
DS
peak < V
(BR)DSS
, V
DD
= 80% V
(BR)DSS
SD
(3)
V
≤ 520 V
DS
Table 3: Thermal data
Parameter
Symbol
R
thj-case
R
thj-amb
Value
Unit
Thermal resistance junction-case
Thermal resistance junction-ambient
3.1
°C/W
62.5
Table 4: Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or non-repetitive
Single pulse avalanche energy
Value
Unit
A
I
AR
4
1150
mJ
Notes:
(1)
Starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V.
DocID030873 Rev 2
3/13
Electrical characteristics
STF35N65DM2
2
Electrical characteristics
(T
case
= 25 °C unless otherwise specified)
Table 5: Static
Symbol
Parameter
Test conditions
V
GS
= 0 V, I
D
= 1 mA
Min. Typ.
650
Max. Unit
Drain-source breakdown
voltage
V
(BR)DSS
V
V
GS
= 0 V, V
DS
= 650 V
1
Zero gate voltage drain
current
I
DSS
µA
V
GS
= 0 V, V
DS
= 650 V,
100
Gate-body leakage
current
I
GSS
V
DS
= 0 V, V
GS
= ±25 V
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 16 A
±5
5
µA
V
V
GS(th)
R
DS(on)
Gate threshold voltage
3
4
Static drain-source on-
resistance
0.093 0.110
Ω
Notes:
(1)
Defined by design, not subject to production test.
Table 6: Dynamic
Symbol
C
iss
Parameter
Input capacitance
Output capacitance
Test conditions
Min. Typ. Max. Unit
–
–
2540
115
–
–
C
oss
V
DS
= 100 V, f = 1 MHz,
V
GS
= 0 V
pF
Reverse transfer
capacitance
C
rss
–
–
2.5
–
–
Equivalent output
capacitance
V
DS
= 0 to 520 V, V
GS
= 0 V
204
pF
R
G
Q
g
Intrinsic gate resistance
f = 1 MHz, I
D
= 0 A
Total gate charge
–
–
–
–
4.2
–
–
–
–
Ω
56.3
12.7
27.6
V
DD
= 520 V, I
D
= 32 A, V
GS
= 0
Q
gs
Q
gd
Gate-source charge
Gate-drain charge
nC
Notes:
(1)
C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
.
Table 7: Switching times
Test conditions
Symbol
t
d(on)
t
r
Parameter
Min. Typ. Max. Unit
Turn-on delay time
Rise time
V
DD
= 325 V, I
D
= 16 A,
R
G
= 4.7
Ω, V
GS
= 10 V (see
–
–
–
23.4
23
–
–
–
ns
t
d(off)
Turn-off delay time
72
t
f
Fall time
–
10.4
–
4/13
DocID030873 Rev 2
STF35N65DM2
Electrical characteristics
Min. Typ. Max. Unit
Table 8: Source-drain diode
Test conditions
Symbol
I
SD
Parameter
Source-drain current
–
–
32
90
A
A
Source-drain current
(pulsed)
t
rr
Forward on voltage
V
GS
= 0 V, I
SD
= 32 A
–
–
1.6
V
Reverse recovery time
100
ns
I
SD
= 32 A, di/dt = 100 A/µs,
Reverse recovery
charge
Q
rr
–
0.42
µC
Reverse recovery
current
I
RRM
t
rr
–
–
–
8.4
205
1.8
A
Reverse recovery time
ns
µC
I
SD
= 32 A, di/dt = 100 A/µs,
V
DD
= 60 V, T
j
= 150 °C (see
Reverse recovery
charge
Q
rr
Reverse recovery
current
I
RRM
–
17.6
A
Notes:
(1)
Pulse width is limited by safe operating area.
(2)
Pulse test: pulse duration = 300 µs, duty cycle 1.5%
DocID030873 Rev 2
5/13
Electrical characteristics
STF35N65DM2
2.1
Electrical characteristics (curves)
Figure 2: Safe operating area
Figure 3: Thermal impedance
Figure 4: Output characteristics
Figure 5: Transfer characteristics
Figure 6: Gate charge vs gate-source voltage
Figure 7: Static drain-source on-resistance
6/13
DocID030873 Rev 2
STF35N65DM2
Figure 8: Capacitance variations
Electrical characteristics
Figure 9: Normalized gate threshold voltage vs
temperature
Figure 10: Normalized on-resistance vs temperature
Figure 11: Normalized V
(BR)DSS
vs temperature
Figure 13: Source- drain diode forward
characteristics
Figure 12: Output capacitance stored energy
DocID030873 Rev 2
7/13
Test circuits
STF35N65DM2
3
Test circuits
Figure 14: Test circuit for resistive load
switching times
Figure 15: Test circuit for gate charge
behavior
Figure 16: Test circuit for inductive load
switching and diode recovery times
Figure 17: Unclamped inductive load test
circuit
Figure 19: Switching time waveform
Figure 18: Unclamped inductive waveform
8/13
DocID030873 Rev 2
STF35N65DM2
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
ECOPACK
®
is an ST trademark.
DocID030873 Rev 2
9/13
Package information
STF35N65DM2
4.1
TO-220FP package information
Figure 20: TO-220FP package outline
7012510_Rev_12_B
10/13
DocID030873 Rev 2
STF35N65DM2
Package information
Table 9: TO-220FP package mechanical data
mm
Dim.
Min.
4.4
Typ.
Max.
4.6
A
B
2.5
2.7
D
2.5
2.75
0.7
E
0.45
0.75
1.15
1.15
4.95
2.4
F
1
F1
F2
G
1.70
1.70
5.2
G1
H
2.7
10
10.4
L2
L3
L4
L5
L6
L7
Dia
16
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
16.4
9.3
3
3.2
DocID030873 Rev 2
11/13
Revision history
STF35N65DM2
5
Revision history
Table 10: Document revision history
Changes
Date
Revision
21-Jul-2017
1
Initial release
Document status changed from preliminary to production data.
04-Dec-2017
2
Minor text changes.
12/13
DocID030873 Rev 2
STF35N65DM2
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DocID030873 Rev 2
13/13
