STMicroelectronics-STF36N60M6
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STF36N60M6
Datasheet
N-channel 600
V
,
8
5 mΩ typ., 30 A MDmesh™ M6
Power MOSFET in a TO-220FP package
Features
V
R
max.
I
D
Order code
STF36N60M6
DS
DS(on)
600 V
99 mΩ
30 A
•
•
•
•
•
Reduced switching losses
Lower R
DS(on)
per area vs previous generation
Low gate input resistance
100% avalanche tested
3
2
1
TO-220FP
Zener-protected
D(2)
Applications
•
•
•
Switching applications
G(1)
LLC converters
Boost PFC converters
Description
S(3)
AM15572v1_no_tab
The new MDmesh™ M6 technology incorporates the most recent advancements to
the well-known and consolidated MDmesh family of SJ MOSFE
T
s
.
STMicroelectronics builds on the previous generation of MDmesh devices through its
new M6 technology, which combines excellent R
DS(on)
per area improvement with
one of the most effective switching behaviors available, as well as a user-friendly
experience for maximum end-application efficiency.
Product status link
Device summary
Order code
Marking
STF36N60M6
36N60M6
TO-220FP
Tube
Package
Packing
DS12609
–
Rev 1
–
July 2018
For further information contact your local STMicroelectronics sales office.
STF36N60M6
Electrical ratings
1
Electrical ratings
Table 1.
Absolute maximum ratings
Parameter
Symbol
Value
Unit
V
V
Gate-source voltage
±25
30
GS
Drain current (continuous) at T
= 25 °C
I
A
C
D
D
Drain current (continuous) at T
= 100 °C
I
19
A
C
I
Drain current (pulsed)
102
40
A
DM
P
T
o
tal dissipation at T
= 25 °C
W
TOT
C
Peak diode recovery voltage slope
15
V/ns
V/ns
MOSFET dv/dt ruggedness
50
Insulation withstand voltage (RMS) from all three leads to external heat
V
2.5
kV
°C
ISO
sink (t = 1 s; T
= 25 °C)
C
T
Storage temperature range
stg
-55 to 150
T
Operating junction temperature range
j
1. Limited
by maximum junction temperature.
2. Pulse
width limited by safe operating area.
3.
4.
I
≤ 30 A, di/dt ≤ 400 A/μs; V
< V
, V
= 400
(BR)DSS DD
SD
DS(peak)
V
≤ 480 V
DS
Table 2.
Thermal data
Parameter
Symbol
Value
3.1
Unit
°C/W
°C/W
R
thj-case
Thermal resistance junction-case
Thermal resistance junction-ambient
R
thj-amb
62.5
Table 3.
Avalanche characteristics
Symbol
Parameter
Value
Unit
Avalanche current, repetitive or not repetitive
I
5
A
AR
(pulse width limited by T
)
jmax
Single pulse avalanche energy
(starting T
= 25 °C, I
= I
, V
= 50 V)
E
750
mJ
AS
j
D
AR
DD
DS12609
–
Rev 1
page 2/13
STF36N60M6
Electrical characteristics
2
Electrical characteristics
T
C
= 25 °C unless otherwise specified
Table 4.
On/off states
Test conditions
Symbol
Parameter
Min.
Typ.
Max.
Unit
Drain-source breakdown
voltage
V
V
= 0
V
, I
= 1
m
A
600
V
(BR)DSS
GS
D
V
GS
V
GS
V
DS
V
DS
= 0
V
, V
=
6
00 V
1
µA
µA
µA
V
DS
I
Zero gate voltage drain current
DSS
100
±5
DS
C
I
= 0
V
, V
=
±
25 V
Gate-body leakage current
Gate threshold voltage
GSS
GS
V
= V
, I
= 250 µA
3.25
4
4.75
GS(th)
GS
D
Static drain-source on-
resistance
R
DS(on)
V
= 10
V
, I
=
1
5 A
GS D
85
99
mΩ
1. Defined
by design, not subject to production test.
Table 5.
Dynamic
Symbol
Parameter
Input capacitance
Test conditions
Min.
Typ.
1960
93
Max.
Unit
pF
pF
pF
pF
Ω
C
iss
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
C
oss
V
V
= 100
V
, f = 1
M
Hz, V
= 0 V
Output capacitance
DS
GS
C
Reverse transfer capacitance
Equivalent output capacitance
Intrinsic gate resistance
T
o
tal gate charge
6
rss
= 0 to 480
V
, V
= 0 V
C
oss eq.
332
1.6
DS
GS
R
f = 1 MHz, I
= 0 A
D
G
Q
44.3
10.1
25
nC
nC
nC
g
V
= 480
V
, I
=
3
0 A, V
= 0 to 10 V
D GS
DD
Q
Gate-source charge
gs
Q
Gate-drain charge
gd
1.
C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
when V
increases from 0
oss DS
to 80% V
DSS
Table 6.
Switching times
Test conditions
Symbol
Parameter
Turn-on delay time
Min.
Typ.
15.2
5.3
Max.
Unit
ns
t
–
–
–
–
–
–
–
–
d(on)
V
V
= 300
V
, I
=
1
5 A, R
= 4.7 Ω,
D G
DD
t
Rise time
ns
r
GS
t
Turn-off delay time
Fall time
50.2
7.3
ns
d(off)
t
ns
f
Table 7.
Source-drain diode
Test conditions
Symbol
Parameter
Source-drain current
Min.
Typ.
Max.
Unit
I
–
30
A
SD
DS12609
–
Rev 1
page 3/13
STF36N60M6
Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
102
1.6
Unit
A
I
Source-drain current (pulsed)
Forward on voltage
–
–
–
–
–
–
–
–
SDM
V
V
= 0
V
, I
=
3
0 A
SD
V
GS
SD
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
340
5.3
31
ns
µC
A
I
= 30 A, di/dt = 100 A/µs, V
= 60 V
DD
SD
Q
rr
I
RRM
t
430
7.7
36
ns
µC
A
rr
I
= 30 A, di/dt = 100 A/µs, V
= 60
V
,
DD
SD
j
Q
rr
I
RRM
1. Pulse
width is limited by safe operating area.
2. Pulse
test: pulse duration = 300 μs, duty cycle 1.5%.
DS12609
–
Rev 1
page 4/13
STF36N60M6
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area
Figure 2.
Thermal impedance
GIPG050620181503SOA
I
D
(A)
GC20521
K
in this area is
Operation
δ
=0.5
limited by R
DS(on)
0.2
0.1
10
2
10
1
10
-1
0.05
0.02
0.01
t
p
=10 µs
t
p
=100 µs
t
p
=1 ms
10
-2
10
-3
T
J
≤
150 °C
T
C
=25 °C
V
GS
=10 V
Z
= K*R
thJ-c
th
Single pulse
10
0
δ =t
/
Ƭ
p
t
p
=10 ms
single pulse
10
1
t
p
Ƭ
10
-1
10
-4
10
-3
10
-2
10
-1
10
-0
t
p
(s)
10
-1
10
0
10
2
V
DS
(V)
Figure 3.
Output characteristics
Figure 4.
Transfer characteristics
GADG220320170910OCH
GADG220320170910TCH
I
D
I
D
(A)
(A)
V
GS
= 9, 10V
100
80
100
80
V
DS
= 18V
V
GS
= 8V
60
60
40
40
V
GS
= 7V
V
GS
= 6V
20
0
20
0
V
GS
= 5V
0
2
4
6
8
10 12 14 16 V
DS
(V)
3
4
5
6
7
8
9
V
GS
(V)
Figure 5.
Gate charge vs gate-source voltage
Figure 6.
Static drain-source on-resistance
GADG030220171159QVG
GADG010220171211RID
V
GS
(V)
V
DS
(V)
R
DS(on)
mΩ
V
DD
= 480 V
I
D
= 30 A
12
10
8
600
500
400
300
200
100
91
10 V
=
V
GS
89
87
85
83
V
DS
6
4
2
0
81
79
0
0
10
20
30
40
50
Q
g
(nC)
0
5
10
15
20
25
30
I
D
(A)
DS12609
–
Rev 1
page 5/13
STF36N60M6
Electrical characteristics (curves)
Figure 8.
Normalized gate threshold voltage vs
temperature
Figure 7.
Capacitance variations
GADG220320170921CVR
C
GIPG300920151316VTH
V
GS(th)
(norm.)
(pF)
I
D
= 250 µA
1.1
10
4
10
3
10
2
C
ISS
1.0
0.9
0.8
C
OSS
C
RSS
f= 1MHz
10
1
10
0
0.7
0.6
10
-1
10
0
10
1
10
2
V
DS
(V)
-75
-25
25
75
125
T
J
(°C)
Figure 10.
Normalized V
(BR)DSS
vs temperature
Figure 9.
Normalized on-resistance vs temperature
GIPG300920151317RON
R
DS(on)
(norm.)
GIPG300920151318BDV
V
(BR)DSS
(norm.)
V
GS
= 10 V
I
D
= 1 mA
1.08
1.04
1.00
0.96
2.2
1.8
1.4
1.0
0.92
0.88
0.6
0.2
-75
-25
25
75
125
T
J
(°C)
-75
-25
25
75
125
T
J
(°C)
Figure 11.
Output capacitance stored energy
Figure 12.
Source-drain diode forward characteristics
GADG010220171214EOS
GADG010220171212SDF
E
OSS
V
SD
(µJ)
(V)
1.1
16
T
J
= -50 °C
1.0
12
8
T
J
= 25 °C
0.9
0.8
T
J
= 150 °C
0.7
4
0
0.6
0.5
0
100 200 300 400 500 600
V
DS
(V)
0
5
10
15
20
25
30
I
SD
(A)
DS12609
–
Rev 1
page 6/13
STF36N60M6
Test circuits
3
Test circuits
Figure 13.
Test circuit for resistive load switching times
Figure 14.
Test circuit for gate charge behavior
V
DD
12 V
47 kΩ
1 kΩ
100 nF
R
L
2200
μF
3.3
μF
V
DD
+
I
G
= CONST
2.7 kΩ
V
D
R
G
D.U.
T
.
100 Ω
V
GS
pulse width
+
D.U.
T
.
V
GS
V
G
2200
μF
pulse width
47 kΩ
1 kΩ
AM01469v1
AM01468v1
Figure 15.
Test circuit for inductive load switching and
diode recovery times
Figure 16.
Unclamped inductive load test circuit
L
A
A
A
D
S
V
D
100 µH
D
fast
G
D.U.
T
.
B
diode
2200
3.3
µF
+
V
DD
1000
µF
B
µF
3.3
µF
B
+
V
DD
I
D
25 Ω
G
D.U.
T
.
R
G
S
+
_
D.U.
T
.
V
i
pulse width
AM01471v1
AM01470v1
Figure 18.
Switching time waveform
Figure 17.
Unclamped inductive waveform
t
on
t
d(on)
t
off
t
d(off)
V
(BR)DSS
t
r
t
f
V
D
90%
90%
I
DM
V
DS
10%
V
GS
10%
0
0
I
D
V
DD
V
DD
90%
10%
AM01472v1
AM01473v1
DS12609
–
Rev 1
page 7/13
STF36N60M6
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions
DS12609
–
Rev 1
page 8/13
STF36N60M6
TO-220FP package information
4.1
TO-220 type A package information
Figure 19.
TO-220FP package outline
7012510_Rev_12_B
DS12609
–
Rev 1
page 9/13
STF36N60M6
TO-220FP package information
Table 8.
TO-220FP package mechanical data
mm
Dim.
Min.
4.4
Typ.
Max.
4.6
A
B
2.5
2.7
D
2.5
2.75
0.7
E
0.45
0.75
1.15
1.15
4.95
2.4
F
1
F1
F2
G
1.70
1.70
5.2
G1
H
2.7
10
10.4
L2
L3
L4
L5
L6
L7
Dia
16
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
16.4
9.3
3
3.2
DS12609
–
Rev 1
page 10/13
STF36N60M6
Revision history
Table 9.
Document revision history
Date
02-Jul-2018
Revision
Changes
1
First release.
DS12609
–
Rev 1
page 11/13
STF36N60M6
Contents
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
2
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
3
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
7
Package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
8
TO-220 type A package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
DS12609
–
Rev 1
page 12/13
STF36N60M6
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST
products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST
products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
Purchasers’ products.
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Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of S
T
.
A
ll other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2018 STMicroelectronics – All rights reserved
DS12609
–
Rev 1
page 13/13
