STMicroelectronics-STF40N60M2
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STF40N60M2, STFI40N60M2,
STFW40N60M2
N-channel 600 V, 0.078
Ω
typ., 34 A MDmesh M2
Power MOSFE
T
s
i
n TO-220F
P
,
I
2
PAKFP and TO-3PF packages
Datasheet
−
production data
Features
Order codes
V
DS
@ T
Jmax
R
DS(on)
max
I
D
STF40N60M2
STFI40N60M2
STFW40N60M2
650 V
0.088
Ω
34 A
3
2
1
1
2
3
TO-220FP
I
2
PAKFP (TO-281)
•
Extremely low gate charge
•
Excellent output capacitance (C
oss
) profile
•
100% avalanche tested
•
Zener-protected
ꢀ
Applications
ꢂ
ꢁ
•
Switching applications
ꢀ
•
LLC converters, resonant converters
TO-3PF
Description
Figure 1. Internal schematic diagram
These devices are N-channel Power MOSFE
T
s
developed using MDmesh™ M2 technology.
Thanks to their strip layout and improved vertical
structure, the devices exhibit low on-resistance
and optimized switching characteristics, rendering
them suitable for the most demanding high
efficiency converters.
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AM01476v1
Table 1. Device summary
Order code
Marking
Packages
Packing
STF40N60M2
STFI40N60M2
STFW40N60M2
TO-220FP
I
2
PAKFP (TO-281)
TO-3PF
40N60M2
Tube
September 2016
DocID026364 Rev 2
1/18
This is information on a product in full production.
Contents
STF40N60M2, STFI40N60M2, STFW40N60M2
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
2
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2/18
DocID026364 Rev 2
STF40N60M2, STFI40N60M2, STFW40N60M2
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Value
Symbol
Parameter
Unit
TO-220F
P
,
I
2
PAKFP
TO-3PF
V
GS
Gate-source voltage
± 25
34
V
A
A
A
(1)
I
D
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
(1)
I
D
22
(1),(2)
I
DM
136
P
TOT
T
o
tal dissipation at T
C
= 25 °C
40
63
W
dv/dt
(3)
Peak diode recovery voltage slope
dv/dt
(4)
MOSFET dv/dt ruggedness
15
50
V/ns
V/ns
Insulation withstand voltage (RMS) from all
three leads to external heat sink
V
ISO
2500
3500
V
(t=1 s; T
C
=25 °C)
T
stg
T
j
Storage temperature range
°C
°C
– 55 to 150
Operating junction temperature range
1. Limited
by maximum junction temperature
2. Pulse
width limited by safe operating area.
3.
4.
I
≤
34 A, di/dt
≤
400 A/µs; V
≤
480 V
< V
, V
=400
V
.
(BR)DSS DD
SD
DS peak
V
DS
Table 3. Thermal data
Value
Symbol
Parameter
Unit
TO-220F
P
,
TO-3PF
I
2
PAKFP
R
thj-case
Thermal resistance junction-case
R
thj-amb
Thermal resistance junction-ambient
3.13
62.5
2.00
50
°C/W
°C/W
Table 4. Avalanche characteristics
Parameter
Symbol
Value
Unit
Avalanche current, repetitive or not
repetitive (pulse width limited by T
jmax
I
AR
6
A
)
Single pulse avalanche energy (starting
T
j
=25°C, I
D
= I
AR
; V
DD
=50 V)
E
AS
500
mJ
DocID026364 Rev 2
3/18
18
Electrical characteristics
STF40N60M2, STFI40N60M2, STFW40N60M2
2
Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Table 5. On /off states
Test conditions
Symbol
Parameter
Drain-source
Min.
Typ.
Max. Unit
V
(BR)DSS
V
GS
= 0, I
D
= 1 mA
600
V
breakdown voltage
V
GS
= 0, V
DS
= 600 V
GS
= 0, V
DS
= 600 V,
1
µA
µA
Zero gate voltage
drain current ()
I
DSS
V
100
T
C
=125 °C
(1)
Gate-body leakage
current
I
GSS
V
DS
= 0, V
GS
= ± 25 V
±10
4
µA
V
V
GS(th)
R
DS(on)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250 µA
Static drain-source
2
3
V
GS
= 10
V
,
I
D
= 17 A
0.078 0.088
Ω
on-resistance
1. Defined
by design, not subject to production test
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
C
iss
Input capacitance
–
–
2500
117
–
–
pF
pF
C
oss
Output capacitance
V
GS
= 0, V
DS
= 100 V,
f = 1 MHz
Reverse transfer
capacitance
C
rss
–
–
–
2.4
342
4.4
–
–
–
pF
pF
Ω
Equivalent output
capacitance
(1)
C
oss eq.
V
GS
= 0, V
DS
= 0 to 480 V
Intrinsic gate
resistance
R
G
f = 1 MHz, I
D
= 0
Q
g
T
o
tal gate charge
V
DD
= 480
V
,
I
D
= 34 A,
–
–
57
10
–
–
nC
nC
V
GS
= 10 V
Q
gs
Gate-source charge
Q
gd
Gate-drain charge
–
25.5
–
nC
1.
C
is defined as a constant equivalent capacitance giving the same charging time as C
when V
DS
oss eq.
oss
increases from 0 to 80% V
DSS
4/18
DocID026364 Rev 2
STF40N60M2, STFI40N60M2, STFW40N60M2
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
t
d(on)
t
r
Turn-on delay time
Rise time
V
DD
= 300 V, I
D
= 34 A,
–
–
–
20.5
13.5
96
–
–
–
ns
ns
ns
R
G
= 4.7
Ω
,
V
GS
= 10 V
t
d(off)
Turn-off-delay time
t
f
Fall time
–
11
–
ns
Table 8. Source drain diode
Test conditions
Symbol
Parameter
Min. Typ. Max.
Unit
I
SD
Source-drain current
–
–
–
–
–
34
A
A
(1)
I
SDM
Source-drain current (pulsed)
Forward on voltage
136
(2)
V
SD
I
SD
= 34 A, V
GS
= 0
1.6
V
t
rr
Reverse recovery time
Reverse recovery charge
I
SD
= 34 A, di/dt = 100 A/µs
440
8.2
ns
µC
Q
rr
I
RRM
Reverse recovery current
–
37
A
t
rr
Reverse recovery time
I
SD
= 34 A, di/dt = 100 A/µs
V
DD
= 60
V
,
T
j
= 150 °C
–
–
568
ns
Q
rr
Reverse recovery charge
11.5
µC
I
RRM
Reverse recovery current
–
40.5
A
1. Pulse
width limited by safe operating area.
2. Pulsed:
pulse duration = 300 µs, duty cycle 1.5%
DocID026364 Rev 2
5/18
18
Electrical characteristics
STF40N60M2, STFI40N60M2, STFW40N60M2
2.1
Electrical characteristics (curves)
Figure 2. Safe operating area for TO-220FP and
Figure 3. Thermal impedance for TO-220FP and
I
2
PAKFP
I
2
PAKFP
AM16097v1
I
D
(A)
100
10
1
10µs
100µs
1ms
10ms
0.1
Tj=150°C
Tc=25°C
Single pulse
0.01
10
V
DS
(V)
0.1
1
100
Figure 4. Safe operating area for TO-3PF
Figure 5. Thermal impedance for TO-3PF
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Figure 6. Output characteristics
Figure 7. Transfer characteristics
AM16100v1
AM16101v1
I
D
(A)
I
D
(A)
90
V
GS
=7, 8, 9, 10V
V
DS
=18V
80
70
60
50
40
30
80
70
60
50
40
6V
30
20
5V
4V
20
10
0
10
0
2
10
15
V
DS
(V)
8
10
V
GS
(V)
0
5
20
0
4
6
6/18
DocID026364 Rev 2
STF40N60M2, STFI40N60M2, STFW40N60M2
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage
Figure 9. Static drain-source on-resistance
AM16102v1
AM16103v1
V
(V)
GS
R
DS(on)
(
Ω
)
V
DS
(V)
V
DD
=480V
=34A
V
GS
=10V
12
I
D
500
V
DS
0.082
0.081
0.080
10
8
400
300
200
0.079
0.078
6
4
2
0
0.077
100
0
0.076
0.075
8
12 16
4
20
24
30
60
40
50
Q
g
(nC)
0
28
I
D
(A)
0
10
20
Figure 10. Capacitance variations
C
Figure 11. Output capacitance stored energy
AM16104v1
AM16105v1
E
oss
(pF)
(µJ)
10000
15
Ciss
Coss
Crss
1000
100
10
10
5
1
0.1
0
0
100
200
400 500
600
1
10
V
DS
(V)
100
300
V
DS
(V)
Figure 12. Normalized gate threshold voltage vs
Figure 13. Normalized on-resistance vs
temperature
temperature
AM15718v1
AM15719v1
V
GS(th)
R
DS(on)
(norm)
(norm)
I
D
=17 A
1.1
1.0
0.9
0.8
I
D
=250µA
2.1
1.7
1.3
0.9
0.5
0.7
0.6
100
-50
0
50
T
J
(°C)
0
50
100
T
J
(°C)
-50
DocID026364 Rev 2
7/18
18
Electrical characteristics
STF40N60M2, STFI40N60M2, STFW40N60M2
Figure 15. Source-drain diode forward vs
Figure 14. Normalized V
(BR)DSS
vs temperature
AM15714v1
temperature
V
(BR)DSS
(norm)
GIPD240920132025FSR
I
D
=1 mA
V
SD
(V)
1.1
T
J
= -50°C
1
1.06
0.9
T
J
= 25°C
1.02
0.98
0.8
0.7
T
J
= 150°C
0.94
0.9
0.6
0.5
-50
0
T
J
(°C)
50
100
0
6
12
18
24
30
I
SD
(A)
8/18
DocID026364 Rev 2
STF40N60M2, STFI40N60M2, STFW40N60M2
Test circuits
3
Test circuits
Figure 16. Switching times test circuit for
resistive load
Figure 17. Gate charge test circuit
V
DD
12V
47k
Ω
1k
Ω
100nF
2200
μ
F
3.3
μ
F
I
G
=CONST
R
L
100
Ω
V
i
=20V=V
GMAX
D.U.T.
V
DD
2200
V
D
R
G
V
G
μ
F
2.7k
Ω
47k
Ω
V
GS
D.U.T.
P
W
1k
Ω
P
W
AM01469v1
AM01468v1
Figure 18. Test circuit for inductive load
switching and diode recovery times
Figure 19. Unclamped inductive load test circuit
L
A
A
A
B
V
D
D
S
2200
μ
F
3.3
μ
F
FAST
DIODE
L=100
μ
H
V
DD
G
D.U.T.
B
3.3
μ
F
1000
μ
F
I
D
B
V
DD
25
Ω
D
G
V
i
D.U.T.
R
G
S
P
w
AM01471v1
AM01470v1
Figure 20. Unclamped inductive waveform
Figure 21. Switching time waveform
t
on
t
off
9
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t
r
td
off
t
f
td
on
9
‘
90%
10%
90%
,
‘0
10%
V
GS
V
DS
,
‘
0
0
9
”
9
”
90%
10%
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AM01473v1
DocID026364 Rev 2
9/18
18
Package information
STF40N60M2, STFI40N60M2, STFW40N60M2
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
ECOPACK
®
is an ST trademark.
10/18
DocID026364 Rev 2
STF40N60M2, STFI40N60M2, STFW40N60M2
Package information
4.1
TO-220F
P
,
p
ackage information
Figure 22. TO-220FP package outline
7012510_Rev_K_B
DocID026364 Rev 2
11/18
18
Package information
STF40N60M2, STFI40N60M2, STFW40N60M2
Table 9. TO-220FP mechanical data
mm
Dim.
Min.
Typ.
Max.
A
B
4.4
2.5
4.6
2.7
D
2.5
2.75
0.7
E
0.45
0.75
1.15
1.15
4.95
2.4
F
1
F1
F2
G
1.70
1.70
5.2
G1
H
2.7
10
10.4
L2
L3
L4
L5
L6
L7
Dia
16
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
16.4
9.3
3
3.2
12/18
DocID026364 Rev 2
STF40N60M2, STFI40N60M2, STFW40N60M2
2
Package information
4.2
I PAKFP (TO-281) package information
Figure 23. I
2
PAK(TO-281) package outline
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DocID026364 Rev 2
13/18
18
Package information
STF40N60M2, STFI40N60M2, STFW40N60M2
Table 10. I
2
PAKFP (TO-281) package mechanical data
mm
Dim.
Min.
Typ.
Max.
A
B
4.40
2.50
2.50
0.65
0.45
0.75
–
4.60
2.70
2.75
0.85
0.70
1.00
1.20
5.20
10.40
23.00
14.10
10.85
3.20
1.25
7.70
D
D1
E
F
F1
G
4.95
10.00
21.00
13.20
10.55
2.70
H
L1
L2
L3
L4
L5
L6
0.85
7.50
7.60
14/18
DocID026364 Rev 2
STF40N60M2, STFI40N60M2, STFW40N60M2
Package information
4.3
TO-3P
F
, package information
Figure 24. TO-3PF package outline
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DocID026364 Rev 2
15/18
18
Package information
STF40N60M2, STFI40N60M2, STFW40N60M2
Table 11. TO-3PF package mechanical data
mm
Dim.
Min.
Typ.
Max.
A
C
5.30
2.80
3.10
1.80
0.80
0.65
1.80
10.30
5.70
3.20
3.50
2.20
1.10
0.95
2.20
11.50
D
D1
E
F
F2
G
G1
H
5.45
10
15.30
9.80
15.70
10.20
23.20
26.70
44.40
4.70
L
L2
L3
L4
L5
L6
L7
N
22.80
26.30
43.20
4.30
24.30
14.60
1.80
24.70
15
2.20
R
3.80
4.20
Dia
3.40
3.80
16/18
DocID026364 Rev 2
STF40N60M2, STFI40N60M2, STFW40N60M2
Revision history
5
Revision history
Table 12. Document revision history
Changes
Date
Revision
First release. Part numbers STF40N60M2 and STFI40N60M2
previously included in datasheet DocID024932.
15-May-2014
1
Updated title in cover page.
28-Sep-2016
2
Minor text changes.
DocID026364 Rev 2
17/18
18
STF40N60M2, STFI40N60M2, STFW40N60M2
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L
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