STMicroelectronics-STF5N52K3
| Part # | STMicroelectronics-STF5N52K3 |
Download  | STMicroelectronics-STF5N52K3 |
STB5N52K3, STD5N52K3, STF5N52K3
STP5N52K3, STU5N52K3
N-channel 525
V
,
1
.2
Ω
, 4.4 A SuperMESH3™ Power MOSFET
D²
P
A
K, D
P
A
K, TO-220F
P
,
T
O-220, I
P
A
K
Features
Order codes
V
DSS
R
DS(on)
max
I
D
P
w
STB5N52K3
STD5N52K3
STF5N52K3
STP5N52K3
STU5N52K3
70 W
70 W
3
3
3
2
2
1
1
1
525 V
< 1.5
Ω
4.4 A
25 W
70 W
TO-220
I
P
A
K
TO-220FP
D
P
A
K
70 W
■
100% avalanche tested
3
3
2
■
Extremely high dv/dt capability
■
Gate charge minimized
1
1
D²
P
A
K
■
Very low intrinsic capacitance
■
Improved diode reverse recovery
characteristics
Figure 1.
Internal schematic diagram
■
Zener-protected
D(2)
Application
Switching applications
G(1)
Description
These devices are made using the
SuperMESH3™ Power MOSFET technology that
is obtained via improvements applied to
STMicroelectronics’ SuperMESH™ technology
combined with a new optimized vertical structure.
The resulting product has an extremely low on
resistance, superior dynamic performance and
high avalanche capabilit
y
,
m
aking it especially
suitable for the most demanding applications.
S(3)
AM01476v1
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STB5N52K3
STD5N52K3
STF5N52K3
STP5N52K3
STU5N52K3
D²
P
A
K
D
P
A
K
T
a
pe and reel
T
u
be
5N52K3
TO-220FP
TO-220
I
P
A
K
December 2010
Doc ID 16952 Rev 2
1/23
23
Contents
STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
2/23
Doc ID 16952 Rev 2
STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Value
Parameter
Unit
TO-220
D²
P
A
K
D
P
A
K
I
P
A
K
TO-220FP
V
DS
V
GS
I
D
Drain- source voltage
525
30
V
V
Gate- source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
4.4
2.77
17.6
70
4.4
(1)
2.77
(1)
17.6
(1)
25
A
A
I
D
(2)
I
DM
A
P
TOT
I
AR
T
o
tal dissipation at T
C
= 25 °C
W
Avalanche current, repetitive or not-
repetitive (pulse width limited by T
J
max)
2.2
A
Single pulse avalanche energy
E
AS
100
12
mJ
(starting T
J
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
dv/dt
(3)
Peak diode recovery voltage slope
V/ns
V
V
ISO
Insulation withstand voltage (AC)
2500
T
J
Operating junction temperature
Storage temperature
– 55 to 150
°C
T
stg
1. Limited
only by maximum temperature allowed
2. Pulse
width limited by safe operating area
3. I
SD
≤
4.4 A, di/dt
≤
100 A/µs,V
DS
peak
≤
V
(BR)DSS
, V
DD
= 80% V
(BR)DSS
.
Table 3.
Symbol
Thermal data
Parameter
Value
Unit
TO-220 D²
P
A
K TO-220FP I
P
A
K D
P
A
K
1.79 1.79
Thermal resistance junction-case
max.
R
thj-case
R
thj-amb
R
thj-pcb
T
J
5
°C/W
°C/W
°C/W
°C/W
Thermal resistance
junction-ambient max
62.5
30
100
Thermal resistance junction-pcb
max.
50
Maximum lead temperature for
soldering purpose
300
300
Doc ID 16952 Rev 2
3/23
Electrical characteristics
STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3
2
Electrical characteristics
(Tcase =25 °C unless otherwise specified)
Table 4.
Symbol
On /off states
Parameter
Drain-source
Test conditions
I
D
= 1 mA, V
GS
= 0
DS
= Max rating
Min.
Typ.
Max. Unit
V
(BR)DSS
525
V
breakdown voltage
Zero gate voltage
V
1
µA
µA
I
DSS
drain current (V
GS
= 0)
V
DS
= Max rating, T
C
=125 °C
50
Gate-body leakage
I
GSS
V
GS
=
20 V; V
DS
=0
10
4.5
1.5
µA
V
current (V
DS
= 0)
V
GS(th)
R
DS(on)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 50 µA
Static drain-source on
3
3.75
1.2
V
GS
= 10
V
,
I
D
= 2.2 A
Ω
resistance
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min.
Typ.
Max. Unit
Input capacitance
C
iss
C
oss
C
rss
545
45
8
pF
Output capacitance
V
DS
= 100
V
, f = 1
M
Hz,
V
GS
= 0
–
–
pF
pF
Reverse transfer
capacitance
Equivalent output
capacitance
(1)
C
oss eq.
V
DS
= 0 to 420
V
,
V
GS
= 0
–
–
33
–
–
pF
R
g
Gate input resistance
f=1 MHz open drain
4.7
Ω
Q
g
Q
gs
Q
gd
T
o
tal gate charge
Gate-source charge
Gate-drain charge
V
DD
= 420
V
,
I
D
= 4.4 A,
V
GS
= 10 V
17
3
nC
nC
nC
–
–
10
1. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DS
4/23
Doc ID 16952 Rev 2
STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3
Electrical characteristics
Min. Typ.
Max Unit
Table 6.
Symbol
Switching times
Parameter
Test conditions
t
d(on)
t
r
t
d(off)
t
f
T
u
rn-on delay time
Rise time
9
ns
ns
ns
ns
V
DD
= 420
V
,
I
D
= 4.4 A,
R
G
= 4.7
Ω
,
V
GS
= 10 V
11
29
16
–
–
T
u
rn-off-delay time
Fall time
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max Unit
I
SD
Source-drain current
4.4
A
A
–
–
(1)
I
SDM
Source-drain current (pulsed)
17.6
(2)
V
SD
Forward on voltage
I
SD
= 4.4 A, V
GS
= 0
1.6
V
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 4.4 A, di/dt = 100 A/µs
V
DD
= 60 V
210
1.3
12
ns
µC
A
Q
rr
–
–
I
RRM
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 4.4 A, di/dt = 100 A/µs
V
DD
= 60 V T
J
= 150 °C
240
1.6
13
ns
µC
A
Q
rr
I
RRM
1. Pulse
width limited by safe operating area
2. Pulsed:
pulse duration = 300 µs, duty cycle 1.5%
Table 8.
Symbol
Gate-source Zener diode
Parameter
Test conditions
Min. Typ. Max.
Unit
30
Gate-source breakdown
voltage
BV
GSO
Igs= 1
mA (open drain)
–
V
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capabilit
y
, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrit
y
.
T
hese integrated Zener diodes thus avoid the usage of external components.
Doc ID 16952 Rev 2
5/23
Electrical characteristics
STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area TO-220, D²
P
A
K
Figure 3.
Thermal impedance TO-220, D²
P
A
K
Thermal impedance TO-220FP
Thermal impedance D
P
A
K, I
P
A
K
AM0
883
7v1
I
D
(A)
10
10
µs
100
µs
1
0.1
1m
s
10m
s
Tj=150°C
Tc=25°C
S
ingle p
u
l
s
e
0.01
10
V
D
S
(V)
0.1
1
100
Figure 4.
Safe operating area TO-220FP
Figure 5.
AM0
8838
v1
I
D
(A)
10
10
µs
100
µs
1
0.1
1m
s
10m
s
Tj=150°C
Tc=25°C
S
ingle p
u
l
s
e
0.01
10
V
D
S
(V)
0.1
1
100
Figure 6.
Safe operating area D
P
A
K, I
P
A
K
Figure 7.
AM0
883
9v1
I
D
(A)
10
µs
10
100
µs
1
0.1
1m
s
10m
s
Tj=150°C
Tc=25°C
S
ingle p
u
l
s
e
0.01
10
V
D
S
(V)
0.1
1
100
6/23
Doc ID 16952 Rev 2
STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3
Electrical characteristics
Figure 8.
Output characteristics
Figure 9.
Transfer characteristics
AM0
88
40v1
AM0
88
41v1
I
D
(A)
D
(A)
7
I
10
V
G
S
=10V
V
D
S
=15V
6
7V
8
6
4
5
4
3
2
1
0
6V
2
0
5V
V
5
1
2
3
20
25
D
S
(V)
7
8
9
V
G
S
(V)
0
10
15
0
4
6
5
Figure 10.
Normalized B
vs temperature
Figure 11.
Static drain-source on resistance
VDSS
AM0
88
42v1
AM0
88
4
3
v1
R
D
S
(on)
BV
D
SS
(norm)
(
Ω
)
1.45
I
D
=1mA
V
G
S
=10V
1.10
1.05
1.00
1.40
1.
3
5
1.
3
0
1.25
1.20
1.15
1.10
1.05
0.95
0.90
1.00
0
-75
4.0
-25
25
75
T
J
(°C)
2.0
3
.0
I
D
(A)
125
1.0
Figure 12.
Gate charge vs gate-source voltage
Figure 13.
Capacitance variations
AM0
88
44v1
AM0
88
45v1
V
G
S
C
(V)
(pF)
V
G
S
400
V
I
DD
=420V
=4.4A
12
D
V
D
S
3
50
1000
100
10
8
Ci
ss
3
00
250
200
150
100
6
Co
ss
Cr
ss
4
2
10
1
50
0
0
10
20
0.1
100
25
Q
g
(nC)
V
D
S
(V)
0
5
15
1
10
Doc ID 16952 Rev 2
7/23
Electrical characteristics
STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3
Figure 14.
Normalized gate threshold voltage
Figure 15.
Normalized on resistance vs
vs temperature
temperature
AM0
88
46v1
AM0
88
47v1
V
G
S
(th)
(norm)
R
D
S
(on)
(norm)
1.10
1.00
0.90
2.5
2.0
1.5
1.0
I
D
=50
µ
A
0.
8
0
0.5
0
0.70
-75
-75
-25
25
75
T
J
(°C)
-25
25
75
T
J
(°C)
125
125
Figure 16.
Source-drain diode forward
characteristics
Figure 17.
Maximum avalanche energy vs
starting Tj
AM0
88
4
8
v1
AM0
88
49v1
E
A
S
(mJ)
110
100
90
S
D
(V)
0.9
V
T
J
=-50°C
I
D
=4.4A
0.
8
0.7
0.6
0.5
T
J
=25°C
8
0
70
T
J
=150°C
60
50
40
3
0
20
0.4
0.
3
0.2
0.1
0
10
0
0
0
120
20 40 60
8
0 100
140 T
1
2
3
4
5
I
S
D
(A)
J
(°C)
8/23
Doc ID 16952 Rev 2
STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3
Test circuits
3
Test circuits
Figure 18.
Switching times test circuit for
resistive load
Figure 19.
Gate charge test circuit
V
DD
12V
47k
Ω
1k
Ω
100nF
2200
3
.
3
μ
F
R
L
μ
F
I
G
=CON
S
T
V
DD
100
Ω
V
i
=20V=V
GMAX
D.U.
T
.
V
G
V
D
R
G
V
G
S
2200
μ
F
D.U.
T
.
2.7k
Ω
47k
Ω
P
W
1k
Ω
P
W
AM0146
8
v1
AM01469v1
Figure 20.
Test circuit for inductive load
switching and diode recovery times
Figure 21.
Unclamped inductive load test
circuit
L
A
A
A
B
D
FA
S
T
DIODE
L=100
μ
H
V
D
G
2200
μ
F
D.U.
T
.
B
3
.
3
μ
F
V
DD
S
3
.
3
μ
F
1000
μ
F
B
V
DD
25
Ω
I
D
D
G
R
G
S
V
i
D.U.
T
.
P
w
AM01470v1
AM01471v1
Figure 22.
Unclamped inductive waveform
Figure 23.
Switching time waveform
t
on
td
on
t
off
td
off
V
(BR)D
SS
t
r
t
f
V
D
90
%
10
%
90
%
I
DM
10
%
V
D
S
I
D
0
0
V
DD
V
DD
90
%
V
G
S
10
%
AM01472v1
AM0147
3
v1
Doc ID 16952 Rev 2
9/23
Package mechanical data
STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECO
P
A
CK packages,
depending on their level of environmental compliance. ECO
P
A
CK
is an ST trademark.
10/23
Doc ID 16952 Rev 2
STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3
Package mechanical data
Table 9.
Dim.
TO-220FP mechanical data
mm
Min.
Typ.
Max.
A
B
4.4
2.5
4.6
2.7
D
2.5
2.75
0.7
E
0.45
0.75
1.15
1.15
4.95
2.4
F
1
F1
F2
G
1.70
1.70
5.2
G1
H
2.7
10
10.4
L2
L3
L4
L5
L6
L7
Dia
16
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
16.4
9.3
3
3.2
Figure 24.
TO-220FP drawing
L7
E
A
B
D
Di
a
L5
L6
F2
F1
F
G
H
G1
L4
L2
L
3
7012510_Rev_K
Doc ID 16952 Rev 2
11/23
Package mechanical data
STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3
Table 10.
DPAK (TO-252) mechanical data
Dim.
mm
Min.
Typ.
Max.
A
A1
A2
b
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
b4
c
c2
D
D1
E
5.10
6.40
6.60
E1
e
4.70
2.28
e1
H
4.40
9.35
1
4.60
10.10
L
L1
L2
L4
R
2.80
0.80
0.60
0°
1
0.20
V2
8°
12/23
Doc ID 16952 Rev 2
STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3
Figure 25.
D
P
A
K (TO-252) drawing
Package mechanical data
006
8
772_G
Doc ID 16952 Rev 2
13/23
Package mechanical data
STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3
Table 11.
TO-220 type A mechanical data
Dim.
mm
Min.
Typ.
Max.
A
b
4.40
0.61
1.14
0.48
15.25
4.60
0.88
1.70
0.70
15.75
b1
c
D
D1
E
1.27
10
10.40
2.70
5.15
1.32
6.60
2.72
14
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
∅
P
Q
3.50
3.93
16.40
28.90
3.75
2.65
3.85
2.95
14/23
Doc ID 16952 Rev 2
STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3
Figure 26.
TO-220 type A drawing
Package mechanical data
00159
88
_typeA_Rev_
S
Doc ID 16952 Rev 2
15/23
Package mechanical data
STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3
Table 12.
D²PAK (TO-263) mechanical data
Dim.
mm
Min.
Typ.
Max.
A
A1
b
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
10
4.60
0.23
0.93
1.70
0.60
1.36
9.35
b2
c
c2
D
D1
E
10.40
E1
e
8.50
2.54
e1
H
4.88
15
5.28
15.85
2.69
2.79
1.40
1.75
J1
L
2.49
2.29
1.27
1.30
L1
L2
R
0.4
V2
0°
8°
16/23
Doc ID 16952 Rev 2
STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3
Figure 27.
D²
P
A
K (TO-263) drawing
Package mechanical data
0079457_P
Table 13.
IPAK (TO-251) mechanical data
mm.
DIM.
min.
typ
max.
A
A1
b
2.20
0.90
0.64
2.40
1.10
0.90
0.95
5.40
b2
b4
5.20
0.3
B5
c
c2
D
0.45
0.48
6.00
6.40
0.60
0.60
6.20
6.60
E
e
2.28
e1
4.40
4.60
Doc ID 16952 Rev 2
17/23
Package mechanical data
STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3
Table 13.
IPAK (TO-251) mechanical data
H
16.10
L
9.00
0.80
9.40
L1
L2
1.20
0.80
1.00
o
V1
10
Figure 28.
I
P
A
K (TO-251) drawing
006
8
771_H
AM09214V1
18/23
Doc ID 16952 Rev 2
STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3
Package mechanical data
5
Package mechanical data
Table 14.
D²PAK (TO-263) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
Min.
Max.
A0
B0
D
10.5
15.7
1.5
10.7
15.9
1.6
A
B
C
D
G
N
T
330
1.5
12.8
20.2
24.4
100
13.2
26.4
30.4
D1
E
1.59
1.65
11.4
4.8
1.61
1.85
11.6
5.0
F
K0
P0
P1
P2
R
3.9
4.1
11.9
1.9
12.1
2.1
Base qty
Bulk qty
1000
1000
50
T
0.25
23.7
0.35
24.3
W
(a)
Figure 29.
D²
P
A
K footprint
16.90
10.
3
0
5.0
8
1.
3
0
3
.70
8
.90
Footprint
a. All
dimension are in millimeters
Doc ID 16952 Rev 2
19/23
Package mechanical data
STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3
Table 15.
DPAK (TO-252) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
Min.
Max.
A0
B0
B1
D
6.8
7
A
B
C
D
G
N
T
330
10.4
10.6
12.1
1.6
1.5
12.8
20.2
16.4
50
13.2
18.4
22.4
1.5
1.5
D1
E
1.65
7.4
1.85
7.6
F
K0
P0
P1
P2
R
2.55
3.9
2.75
4.1
Base qt
y
.
Bulk qt
y
.
2500
2500
7.9
8.1
1.9
2.1
40
T
0.25
15.7
0.35
16.3
W
(b)
Figure 30.
D
P
A
K footprint
1.6
6.7
3
3
2.
3
6.7
2.
3
1.6
AM0
88
50v1
b. All
dimension are in millimeters
20/23
Doc ID 16952 Rev 2
STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3
Figure 31.
Tape for D
P
A
K (TO-252) and D²
P
A
K (TO-263)
Package mechanical data
10 pitche
s
c
u
m
u
l
a
tive
toler
a
nce on t
a
pe +/- 0.2 mm
P0
D
P2
T
E
F
W
K0
B1
B0
For m
a
chine ref. only
incl
u
ding dr
a
ft
a
nd
A0
D1
P1
r
a
dii concentric
a
ro
u
nd B0
U
s
er direction of feed
R
Bending r
a
di
us
U
s
er direction of feed
AM0
88
52v1
Figure 32.
Reel for D
P
A
K (TO-252) and D²
P
A
K (TO-263)
T
REEL DIMEN
S
ION
S
40mm min.
Acce
ss
hole
At
s
l ot
loc
a
tion
B
D
C
N
A
G me
asu
red
At h
ub
T
a
pe
s
lot
In core for
F
u
ll r
a
di
us
T
a
pe
s
t
a
rt
AM0
88
51v1
Doc ID 16952 Rev 2
21/23
Revision history
STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3
6
Revision history
Table 16.
Document revision history
Date
Revision
Changes
05-Jan-2010
14-Dec-2010
1
2
First release.
Document status promoted from preliminary data to datasheet.
22/23
Doc ID 16952 Rev 2
STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS “AUTOMOTIVE
GRADE” MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2010 STMicroelectronics – All rights reserved
STMicroelectronics group of companies
Australia – Belgium – Brazil – Canada – China – Czech Republic – Finland – France – Germany – Hong Kong – India – Israel – Italy – Japan –
Malaysia – Malta – Morocco – Philippines – Singapore – Spain – Sweden – Switzerland – United Kingdom – United States of America
Doc ID 16952 Rev 2
23/23
