STMicroelectronics-STF5N60M2
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STF5N60M2
N-
channel 600 V, 1.3 Ω typ., 3.5 A MDmesh™ M2
Power MOSFET in a TO-220FP package
Datasheet – production data
Features
Order code
V
DS
@ T
Jmax
R
DS(on)
max.
I
D
STF5N60M2
650 V
1.4 Ω
3.5 A
Extremely low gate charge
Excellent output capacitance (C
OSS
) profile
100% avalanche tested
Zener-protected
Applications
TO-220FP
Switching applications
Figure 1: Internal schematic diagram
Description
This device is an N-channel Power MOSFET
developed using MDmesh™ M2 technology.
Thanks to its strip layout and an improved vertical
structure, the device exhibits low on-resistance
and optimized switching characteristics,
rendering it suitable for the most demanding high
efficiency converters.
Table 1: Device summary
Order code
Marking
Package
Packing
STF5N60M2
5N60M2
TO-220FP
Tube
June 2016
DocID025320 Rev 2
1/13
This is information on a product in full production.
Contents
STF5N60M2
Contents
2/13
DocID025320 Rev 2
STF5N60M2
Electrical ratings
1
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
V
GS
Gate-source voltage
±25
3.5
2.2
14
V
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
A
A
P
TOT
Total dissipation at T
C
= 25 °C
20
W
Insulation withstand voltage (RMS) from all three leads to
external heat sink (t = 1 s; T
C
= 25 °C)
V
ISO
2500
V
15
50
V/ns
T
stg
T
j
Storage temperature range
-55 to 150
°C
Operating junction temperature range
Notes:
(1)
Limited by package.
(2)
Pulse width limited by safe operating area.
(3)
I
≤ 3.5 A, di/dt ≤ 400 A/μs; V
DS
peak < V
(BR)DSS
, V
DD
= 400 V.
SD
(4)
V
≤ 480 V.
DS
Table 3: Thermal data
Parameter
Symbol
R
thj-case
R
thj-amb
Value
6.25
Unit
°C/W
°C/W
Thermal resistance junction-case max.
Thermal resistance junction-ambient max.
62.5
Table 4: Avalanche characteristics
Symbol
Parameter
Value
Unit
Avalanche current, repetitive or not repetitive
I
AR
0.5
A
(pulse width limited by T
jmax
)
Single pulse avalanche energy
E
AS
80
mJ
(starting T
j
= 25 °C, I
D
= I
AR
; V
DD
= 50 V)
DocID025320 Rev 2
3/13
Electrical characteristics
STF5N60M2
2
Electrical characteristics
(T
case
= 25 °C unless otherwise specified)
Table 5: On /off states
Symbol
Parameter
Test conditions
V
GS
= 0 V, I
D
= 1 mA
Min. Typ. Max. Unit
Drain-source breakdown
voltage
V
(BR)DSS
600
V
V
GS
= 0 V, V
DS
= 600 V
1
Zero gate voltage drain
current
I
DSS
µA
V
GS
= 0 V, V
DS
= 600 V,
100
Gate-body leakage
current
I
GSS
V
DS
= 0 V, V
GS
= ±25 V
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 1.7 A
±10
4
μA
V
V
GS(th)
R
DS(on)
Gate threshold voltage
2
3
Static drain-source
on-resistance
1.3
1.4
Ω
Notes:
(1)
Defined by design, not subject to production test.
Table 6: Dynamic
Test conditions
Symbol
C
iss
Parameter
Input capacitance
Output capacitance
Min. Typ. Max. Unit
–
–
211
13
–
–
C
oss
V
DS
= 100 V, f = 1 MHz,
V
GS
= 0 V
pF
Reverse transfer
capacitance
C
rss
–
–
0.75
19.5
–
–
Equivalent output
capacitance
V
DS
= 0 to 480 V, V
GS
= 0 V
f = 1 MHz open drain
pF
R
G
Q
g
Intrinsic gate resistance
Total gate charge
–
–
–
6.2
8
–
–
–
Ω
V
DD
= 480 V, I
D
= 3.5 A,
V
GS
= 10 V
Q
gs
Gate-source charge
1.6
nC
Q
gd
Gate-drain charge
–
4.4
–
Notes:
(1)
C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
.
Table 7: Switching times
Test conditions
Symbol
Parameter
Min. Typ. Max. Unit
Turn-on
delay time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
12
3
–
–
–
–
V
DD
= 300 V, I
D
= 1.7 A R
G
= 4.7
Ω,
Rise time
ns
Turn-off
delay time
70
15
Fall time
4/13
DocID025320 Rev 2
STF5N60M2
Electrical characteristics
Min. Typ. Max. Unit
Table 8: Source-drain diode
Test conditions
Symbol
Parameter
I
SD
Source-drain current
–
–
3.5
14
A
A
Source-drain current
(pulsed)
Forward on voltage
V
GS
= 0 V, I
SD
= 3.5 A
–
–
1.6
V
t
rr
Reverse recovery time
220
ns
I
SD
= 3.5 A, di/dt = 100 A/µs,
Reverse recovery
charge
Q
rr
–
1.05
µC
Reverse recovery
current
I
RRM
t
rr
–
–
–
9.5
314
1.5
A
Reverse recovery time
ns
µC
I
SD
= 3.5 A, di/dt = 100 A/µs,
V
DD
= 60 V, T
j
= 150 °C (see
Reverse recovery
charge
Q
rr
Reverse recovery
current
I
RRM
–
9.5
A
Notes:
(1)
Pulse width is limited by safe operating area.
(2)
Pulse test: pulse duration = 300 µs, duty cycle 1.5 %.
DocID025320 Rev 2
5/13
Electrical characteristics
STF5N60M2
2.1
Electrical characteristics (curves)
Figure 2: Safe operating area
Figure 3: Thermal impedance
Figure 4: Output characteristics
Figure 5: Transfer characteristics
Figure 6: Gate charge vs gate-source voltage
Figure 7: Static drain-source on-resistance
6/13
DocID025320 Rev 2
STF5N60M2
Electrical characteristics
Figure 8: Capacitance variations
Figure 9: Output capacitance stored energy
Figure 10: Normalized gate threshold voltage
vs temperature
Figure 11: Normalized on-resistance vs
temperature
Figure 13: Source- drain diode forward
characteristics
Figure 12: Normalized V
(BR)DSS
vs temperature
DocID025320 Rev 2
7/13
Test circuits
STF5N60M2
3
Test circuits
Figure 14: Test circuit for resistive load
switching times
Figure 15: Test circuit for gate charge
behavior
Figure 16: Test circuit for inductive load
switching and diode recovery times
Figure 17: Unclamped inductive load test
circuit
Figure 19: Switching time waveform
Figure 18: Unclamped inductive waveform
8/13
DocID025320 Rev 2
STF5N60M2
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
ECOPACK
®
is an ST trademark.
DocID025320 Rev 2
9/13
Package information
STF5N60M2
4.1
TO-220FP package information
Figure 20: TO-220FP package outline
10/13
DocID025320 Rev 2
STF5N60M2
Package information
Table 9: TO-220FP package mechanical data
mm
Dim.
Min.
4.4
Typ.
Max.
4.6
A
B
2.5
2.7
D
2.5
2.75
0.7
E
0.45
0.75
1.15
1.15
4.95
2.4
F
1
F1
F2
G
1.70
1.70
5.2
G1
H
2.7
10
10.4
L2
L3
L4
L5
L6
L7
Dia
16
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
16.4
9.3
3
3.2
DocID025320 Rev 2
11/13
Revision history
STF5N60M2
5
Revision history
Table 10: Document revision history
Changes
Date
Revision
30-Sep-2013
1
First release.
Updated title, features and description in cover page.
15-Jun-2016
2
Minor text changes.
12/13
DocID025320 Rev 2
STF5N60M2
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DocID025320 Rev 2
13/13
