STMicroelectronics-STF5N95K3
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STD5N95K3, STF5N95K3, STP5N95K3,
STU5N95K3
N-channel 950
V
, 3
Ω
typ., 4 A Zener-protected SuperMESH3™
Power MOSFET in DPAK, TO-220F
P
,
T
O-220 and IPAK packages
Datasheet
−
production data
Features
T
A
B
3
Order codes
V
DS
R
DS(on)
max
I
D
P
TOT
1
STD5N95K3
STF5N95K3
STP5N95K3
STU5N95K3
90 W
25 W
90 W
90 W
DPAK
3
2
1
950 V
3.5
Ω
4 A
TO-220FP
T
A
B
T
A
B
•
100% avalanche tested
3
3
2
1
•
Extremely large avalanche performance
•
Gate charge minimized
2
1
TO-220
•
Very low intrinsic capacitances
•
Zener-protected
Figure 1. Internal schematic diagram
D(2, TAB)
Applications
•
Switching applications
Description
G(1)
These SuperMESH3™ Power MOSFE
T
s
a
re the
result of improvements applied to
STMicroelectronics’ SuperMESH™ technology,
combined with a new optimized vertical structure.
These devices boast an extremely low on-
resistance, superior dynamic performance and
high avalanche capability, rendering them suitable
for the most demanding applications.
S(3)
AM01476v1
Table 1. Device summary
Order codes
Marking
Package
Packaging
STD5N95K3
STF5N95K3
STP5N95K3
STU5N95K3
DPAK
TO-220FP
TO-220
IPAK
T
a
pe and reel
5N95K3
Tube
May 2013
DocID15696 Rev 3
1/23
This is information on a product in full production.
23
Contents
STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
2/23
DocID15696 Rev 3
STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Value
Symbol
Parameter
Unit
DPAK TO-220FP TO-220 IPAK
V
GS
I
D
Gate- source voltage
±30
V
A
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
4
3
4
(1)
3
(1)
16
(1)
25
4
3
I
D
A
(2)
I
DM
16
90
16
90
A
P
TOT
I
AR
T
o
tal dissipation at T
C
= 25 °C
W
Avalanche current, repetitive or not-
repetitive (pulse width limited by T
J
max)
4
A
Single pulse avalanche energy
E
AS
100
5
mJ
(starting T
J
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
dv/dt
(3)
Peak diode recovery voltage slope
V/ns
Insulation withstand voltage (RMS) from all
V
ISO
three leads to external heat sink
(t = 1 s,T
C
= 25 °C)
2500
V
T
J
Operating junction temperature
Storage temperature
-55 to 150
°C
T
stg
1. Limited
by maximum junction temperature
2. Pulse
width limited by safe operating area
3.
I
≤
4 A, di/dt
≤
100 A/µs, peak V
≤
V
SD DS
(BR)DSS
Table 3. Thermal data
Parameter
Value
Symbol
Unit
DPAK TO-220FP TO-220 IPAK
R
thj-case
Thermal resistance junction-case max
1.39
50
5
1.39
°C/W
100 °C/W
°C/W
R
thj-amb
Thermal resistance junction-ambient max
62.5
(1)
R
thj-pcb
Thermal resistance junction-pcb max
1. When
mounted on 1inch² FR-4 board, 2 oz Cu
DocID15696 Rev 3
3/23
Electrical characteristics
STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3
2
Electrical characteristics
(
T
c
ase =25 °C unless otherwise specified)
Table 4. On /off states
Test conditions
Symbol
Parameter
Drain-source
Min.
Typ.
Max. Unit
V
(BR)DSS
I
D
= 1 mA, V
GS
= 0
V
DS
= 950 V
950
V
breakdown voltage
Zero gate voltage
1
µA
µA
I
DSS
drain current (V
GS
= 0)
V
DS
= 950 V, T
C
=125 °C
50
Gate-body leakage
V
GS
= ± 20 V
I
GSS
±10
5
µA
V
current (V
DS
= 0)
V
GS(th)
R
DS(on)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 100 µA
3
4
3
Static drain-source on-
resistance
V
GS
= 10
V
,
I
D
= 2 A
3.5
Ω
Table 5. Dynamic
Test conditions
Symbol
Parameter
Min.
Typ.
460
38
Max. Unit
C
iss
Input capacitance
Output capacitance
–
–
–
–
pF
pF
C
oss
V
V
DS
= 25
V
, f = 1 MHz,
GS
= 0
C
rss
Reverse transfer
capacitance
–
–
1
–
–
pF
pF
Equivalent
capacitance time
related
(1)
C
o(tr)
V
DS
= 0 to 760
V
, V
GS
= 0
V
DS
= 0 to 760
V
, V
GS
= 0
970
Equivalent
capacitance energy
related
(2)
C
o(er)
–
15
–
pF
R
g
Q
g
Gate input resistance
f=1 MHz , I
D
= 0
T
o
tal gate charge
–
–
–
–
5.5
19
–
–
–
–
Ω
nC
nC
nC
V
DD
= 760 V, I
D
= 4 A,
Q
gs
Q
gd
Gate-source charge
Gate-drain charge
V
GS
= 10 V
4.7
12
1. Time
related is defined as a constant equivalent capacitance giving the same charging time as C
when
oss
V
increases from 0 to 80% V
DS
DSS
2. Energy
related is defined as a constant equivalent capacitance giving the same stored energy as C
oss
when V
increases from 0 to 80% V
DS
DSS
4/23
DocID15696 Rev 3
STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3
Electrical characteristics
Min. Typ. Max.
Unit
Table 6. Switching times
Symbol
Parameter
Test conditions
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
–
–
–
–
17
7
–
–
–
–
ns
ns
ns
ns
V
DD
= 475
V
, I
D
= 2 A,
R
G
= 4.7
Ω,
V
GS
= 10 V
Turn-off-delay time
Fall time
32
18
Table 7. Source drain diode
Test conditions
Symbol
Parameter
Min. Typ. Max. Unit
I
SD
Source-drain current
–
–
–
–
–
–
–
–
–
4
A
A
(1)
I
SDM
Source-drain current (pulsed)
Forward on voltage
16
1.6
(2)
V
SD
I
SD
= 4 A, V
GS
= 0
V
t
rr
Q
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
410
3.5
17
ns
µC
A
I
SD
= 4 A, di/dt = 100 A/µs
V
DD
= 60 V
I
RRM
t
rr
516
4.1
16
ns
µC
A
I
SD
= 4 A, di/dt = 100 A/µs
Q
rr
V
DD
= 60 V T
J
= 150 °C
I
RRM
1. Pulse
width limited by safe operating area
2. Pulsed:
pulse duration = 300 µs, duty cycle 1.5%
Table 8. Gate-source Zener diode
Symbol
Parameter
Test conditions
Min. Typ. Max.
Unit
30
Gate-source breakdown
voltage
V
(BR)GSO
I
GS
= ± 1 mA, I
D
=0
–
–
V
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
DocID15696 Rev 3
5/23
Electrical characteristics
STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3
Figure 3. Thermal impedance for IPAK, DPAK
2.1
Electrical characteristics (curves)
Figure 2. Safe operating area for IPAK, DPAK
AM05586v1
I
D
(A)
10
10µs
100µs
1
0.1
1ms
10ms
Tj=150°C
Tc=25°C
Sinlge
pulse
0.01
10
V
DS
(V)
0.1
1
100
Figure 4. Safe operating area
for TO-220FP
Figure 5. Thermal impedance for TO-220FP
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for TO-220
Figure 7. Thermal impedance for TO-220
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6/23
DocID15696 Rev 3
STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3
Figure 8. Output characteristics
Electrical characteristics
Figure 9. Transfer characteristics
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Figure 10. Gate charge vs gate-source voltage
Figure 11. Static drain-source on-resistance
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Figure 12. Capacitance variations
Figure 13. Output capacitance stored energy
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DocID15696 Rev 3
7/23
Electrical characteristics
STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3
Figure 14. Normalized gate threshold voltage vs
temperature
Figure 15. Normalized on-resistance vs
temperature
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Figure 16. Source-drain diode forward
characteristics
Figure 17. Normalized B
VDSS
vs temperature
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starting T
j
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8/23
DocID15696 Rev 3
STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3
Test circuits
3
Test circuits
Figure 19. Switching times test circuit for
resistive load
Figure 20. Gate charge test circuit
V
DD
12V
47k
Ω
100nF
1k
Ω
2200
3.3
μ
F
R
L
μ
F
I
G
=CONST
V
DD
100
Ω
V
i
=20V=V
GMAX
D.U.
T
.
V
D
R
G
V
GS
2200
μ
F
D.U.
T
.
V
G
2.7k
Ω
47k
Ω
P
W
1k
Ω
P
W
AM01468v1
AM01469v1
Figure 21. Test circuit for inductive load
switching and diode recovery times
Figure 22. Unclamped inductive load test circuit
L
A
A
A
B
D
S
FAST
DIODE
L=100
μ
H
V
D
G
2200
μ
F
D.U.
T
.
B
3.3
V
DD
μ
F
3.3
μ
F
1000
μ
F
B
V
DD
25
Ω
I
D
D
G
R
G
S
V
i
D.U.
T
.
P
w
AM01470v1
AM01471v1
Figure 23. Unclamped inductive waveform
Figure 24. Switching time waveform
t
on
t
off
td
off
V
(BR)DSS
t
r
t
f
td
on
V
D
90%
10%
90%
I
DM
10%
V
GS
V
DS
I
D
0
0
V
DD
V
DD
90%
10%
AM01472v1
AM01473v1
DocID15696 Rev 3
9/23
Package mechanical data
STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
ECOPACK
®
is an ST trademark.
10/23
DocID15696 Rev 3
STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3
Package mechanical data
Table 9. DPAK (TO-252) mechanical data
mm
Dim.
Min.
Typ.
Max.
A
A1
A2
b
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
b4
c
c2
D
D1
E
5.10
6.40
6.60
E1
e
4.70
2.28
e1
H
4.40
9.35
1.00
4.60
10.10
1.50
L
(L1)
L2
L4
R
2.80
0.80
0.60
0°
1.00
8°
0.20
V2
DocID15696 Rev 3
11/23
Package mechanical data
STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3
Figure 25. DPAK (TO-252) drawing
0068772_K
12/23
DocID15696 Rev 3
STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3
Figure 26. DPAK footprint
(a)
Package mechanical data
Footprint_REV_K
a. All
dimensions are in millimeters
DocID15696 Rev 3
13/23
Package mechanical data
STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3
Table 10. TO-220FP mechanical data
mm
Dim.
Min.
Typ.
Max.
A
B
4.4
2.5
4.6
2.7
D
2.5
2.75
0.7
E
0.45
0.75
1.15
1.15
4.95
2.4
F
1
F1
F2
G
1.70
1.70
5.2
G1
H
2.7
10
10.4
L2
L3
L4
L5
L6
L7
Dia
16
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
16.4
9.3
3
3.2
14/23
DocID15696 Rev 3
STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3
Package mechanical data
Figure 27. TO-220FP drawing
7012510_Rev_K_B
DocID15696 Rev 3
15/23
Package mechanical data
STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3
Table 11. TO-220 type A mechanical data
mm
Dim.
Min.
Typ.
Max.
A
b
4.40
0.61
1.14
0.48
15.25
4.60
0.88
1.70
0.70
15.75
b1
c
D
D1
E
1.27
10
10.40
2.70
5.15
1.32
6.60
2.72
14
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
3.50
3.93
16.40
28.90
∅
Q
P
3.75
2.65
3.85
2.95
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STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3
Package mechanical data
Figure 28. TO-220 type A drawing
0015988_typeA_Rev_S
DocID15696 Rev 3
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Package mechanical data
STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3
Table 12. IPAK (TO-251) mechanical data
mm.
typ.
DIM
min.
max.
A
A1
b
2.20
0.90
0.64
2.35
1.10
0.90
0.95
5.40
b2
b4
B5
c
5.20
0.30
0.45
0.48
6.00
6.40
0.60
0.60
6.15
6.55
c2
D
E
e
2.28
e1
H
4.40
4.60
16.10
L
9.00
0.80
9.40
1.20
1.00
L1
L2
V1
0.80
10°
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STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3
Package mechanical data
Figure 29. IPAK (TO-251) drawing
0068771_K
DocID15696 Rev 3
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Packaging mechanical data
STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3
5
Packaging mechanical data
Table 13. DPAK (TO-252) tape and reel mechanical data
Tape Reel
mm
mm
Dim.
Dim.
Min.
Max.
Min.
Max.
A0
B0
B1
D
6.8
7
A
B
C
D
G
N
T
330
10.4
10.6
12.1
1.6
1.5
12.8
20.2
16.4
50
13.2
18.4
22.4
1.5
1.5
D1
E
1.65
7.4
1.85
7.6
F
K0
P0
P1
P2
R
2.55
3.9
2.75
4.1
Base qty.
Bulk qty.
2500
2500
7.9
8.1
1.9
2.1
40
T
0.25
15.7
0.35
16.3
W
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STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3
Packaging mechanical data
Figure 30. Tape for DPAK (TO-252)
10 pitches cumulative
tolerance on tape +/- 0.2 mm
P0
D
Top cover
tape
P2
T
E
F
W
K0
B1
B0
For machine ref. only
including draft and
A0
D1
P1
radii concentric around B0
User direction of feed
R
Bending radius
User direction of feed
AM08852v1
Figure 31. Reel for DPAK (TO-252)
T
REEL DIMENSIONS
40mm min.
Access hole
At sl
ot location
B
D
C
N
A
G measured at hub
Full radius
Tape slot
in core for
tape start 25 mm min.
width
AM08851v2
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Revision history
STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3
6
Revision history
Table 14. Document revision history
Changes
Date
Revision
12-May-2009
11-Dec-2009
1
2
First release
Document status promoted from preliminary data to datasheet
15-May-2013
3
– Minor text change on the cover page.
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DocID15696 Rev 3
STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3
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