STMicroelectronics-STF8N60DM2
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STF8N60DM2
N-
channel 600 V, 550 mΩ typ., 8 A MDmesh™ DM2
Power MOSFET in a TO-220FP package
Datasheet – production data
Features
Order code
V
DS
R
DS(on)
max.
I
D
P
TOT
STF8N60DM2
600 V
600 mΩ
8 A
25 W
Fast-recovery body diode
Extremely low gate charge and input
capacitance
Low on-resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
TO-220FP
Figure 1: Internal schematic diagram
Applications
D(2)
Switching applications
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Q
rr
)
and time (t
rr
) combined with low R
DS(on)
, rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
G(1)
S(3)
AM15572v1_no_tab
Table 1: Device summary
Order code
Marking
Package
Packing
STF8N60DM2
8N60DM2
TO-220FP
Tube
November 2016
DocID027864 Rev 2
1/13
This is information on a product in full production.
Contents
STF8N60DM2
Contents
2/13
DocID027864 Rev 2
STF8N60DM2
Electrical ratings
1
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
±25
8
Unit
V
GS
Gate-source voltage
V
Drain current (continuous) at T
case
= 25 °C
Drain current (continuous) at T
case
= 100 °C
Drain current (pulsed)
A
5
32
A
P
TOT
Total dissipation at T
case
= 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
25
W
50
V/ns
kV
50
Insulation withstand voltage (RMS) from all three leads to external
heat sink (t = 1 s; T
C
= 25 °C)
V
ISO
2.5
T
stg
T
j
Storage temperature range
–
55 to 150
°C
Operating junction temperature range
Notes:
(1)
Current is limited by package.
(2)
Pulse width is limited by safe operating area.
(3)
I
≤ 8 A, di/dt=900 A/μs; V
DS
peak < V
(BR)DSS
, V
DD
= 400 V.
SD
(4)
V
≤ 480 V.
DS
Table 3: Thermal data
Symbol
R
thj-case
R
thj-amb
Parameter
Thermal resistance junction-case
Thermal resistance junction-ambient
Value
Unit
5
°C/W
62.5
Table 4: Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not repetitive
Single pulse avalanche energy
Value
Unit
A
2.5
430
mJ
Notes:
(1)
Pulse width limited by T
jmax
(2)
starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V.
.
DocID027864 Rev 2
3/13
Electrical characteristics
STF8N60DM2
2
Electrical characteristics
(T
case
= 25 °C unless otherwise specified)
Table 5: Static
Test conditions
Symbol
Parameter
Min. Typ. Max. Unit
Drain-source breakdown
voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 1 mA
600
V
V
GS
= 0 V, V
DS
= 600 V
1
Zero gate voltage drain
current
I
DSS
µA
V
GS
= 0 V, V
DS
= 600 V,
100
Gate-body leakage
current
I
GSS
V
DS
= 0 V, V
GS
= ±25 V
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 4 A
±5
5
µA
V
V
GS(th)
R
DS(on)
Gate threshold voltage
3
4
Static drain-source on-
resistance
550
600
mΩ
Notes:
(1)
Defined by design, not subject to production test.
Table 6: Dynamic
Test conditions
Symbol
C
iss
Parameter
Input capacitance
Output capacitance
Min. Typ. Max. Unit
–
–
449
24
–
–
C
oss
V
DS
= 100 V, f = 1 MHz,
V
GS
= 0 V
pF
Reverse transfer
capacitance
C
rss
–
–
0.89
42
–
–
Equivalent output
capacitance
V
DS
= 0 to 480 V, V
GS
= 0 V
f = 1 MHz, I
D
= 0 A
pF
R
G
Q
g
Intrinsic gate resistance
Total gate charge
–
–
–
–
6.5
13.5
3
–
–
–
–
Ω
V
DD
= 480 V, I
D
= 8 A,
Q
gs
Q
gd
Gate-source charge
Gate-drain charge
nC
7.7
Notes:
(1)
C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
.
Table 7: Switching times
Test conditions
Symbol
t
d(on)
t
r
Parameter
Turn-on delay time
Rise time
Min. Typ. Max. Unit
V
DD
= 300 V, I
D
= 4 A
–
–
–
10
6
–
–
–
R
G
= 4.7
Ω, V
GS
= 10 V (see
ns
t
d(off)
Turn-off delay time
25.4
t
f
Fall time
–
9.5
–
4/13
DocID027864 Rev 2
STF8N60DM2
Electrical characteristics
Min. Typ. Max. Unit
Table 8: Source-drain diode
Test conditions
Symbol
I
SD
Parameter
Source-drain current
–
–
8
A
A
Source-drain current
(pulsed)
32
1.6
t
rr
Forward on voltage
V
GS
= 0 V, I
SD
= 8 A
–
–
–
V
Reverse recovery time
Reverse recovery charge
I
SD
= 8 A, di/dt = 100 A/µs,
80
ns
nC
Q
rr
188
I
RRM
Reverse recovery current
–
4.7
A
t
rr
Reverse recovery time
I
SD
= 8 A, di/dt = 100 A/µs,
V
DD
= 60 V, T
j
= 150 °C (see
–
–
160
640
ns
Q
rr
Reverse recovery charge
nC
I
RRM
Reverse recovery current
–
8
A
Notes:
(1)
Pulse width is limited by safe operating area.
(2)
Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
DocID027864 Rev 2
5/13
Electrical characteristics
STF8N60DM2
2.1
Electrical characteristics (curves)
Figure 2: Safe operating area
Figure 3: Thermal impedance
Figure 4: Output characteristics
Figure 5: Transfer characteristics
Figure 6: Gate charge vs gate-source voltage
Figure 7: Static drain-source on resistance
6/13
DocID027864 Rev 2
STF8N60DM2
Figure 8: Capacitance variations
Electrical characteristics
Figure 9: Normalized gate threshold voltage vs
temperature
Figure 10: Normalized on-resistance vs temperature
Figure 11: Normalized V(BR)DSS vs temperature
Figure 12: Source-drain diode forward
characteristics
Figure 13: Output capacitance stored energy
DocID027864 Rev 2
7/13
Test circuits
STF8N60DM2
3
Test circuits
Figure 14: Test circuit for resistive load
switching times
Figure 15: Test circuit for gate charge
behavior
Figure 16: Test circuit for inductive load
switching and diode recovery times
Figure 17: Unclamped inductive load test
circuit
Figure 19: Switching time waveform
Figure 18: Unclamped inductive waveform
8/13
DocID027864 Rev 2
STF8N60DM2
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
ECOPACK
®
is an ST trademark.
DocID027864 Rev 2
9/13
Package information
STF8N60DM2
4.1
TO-220FP package information
Figure 20: TO-220FP package outline
10/13
DocID027864 Rev 2
STF8N60DM2
Package information
Table 9: TO-220FP package mechanical data
mm
Dim.
Min.
4.4
Typ.
Max.
4.6
A
B
2.5
2.7
D
2.5
2.75
0.7
E
0.45
0.75
1.15
1.15
4.95
2.4
F
1
F1
F2
G
1.70
1.70
5.2
G1
H
2.7
10
10.4
L2
L3
L4
L5
L6
L7
Dia
16
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
16.4
9.3
3
3.2
DocID027864 Rev 2
11/13
Revision history
STF8N60DM2
5
Revision history
Table 10: Document revision history
Changes
Date
Revision
12-May-2015
1
First release.
Document status promoted from preliminary to production data.
24-Nov-2016
2
12/13
DocID027864 Rev 2
STF8N60DM2
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DocID027864 Rev 2
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