STMicroelectronics-STF8NM60ND
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STD8NM60ND, STF8NM60ND
STP8NM60ND, STU8NM60ND
N-channel 600
V
,
0
.59
Ω
, 7 A,
FDmesh™ II Power MOSFET
TO-220, TO-220F
P
,
I
P
A
K, D
P
A
K
Features
V
DSS
(@Tjmax)
R
DS(on)
max
Type
I
D
3
2
1
3
2
STD8NM60ND
STF8NM60ND
STP8NM60ND
STU8NM60ND
650 V
650 V
650 V
650 V
< 0.70
Ω
< 0.70
Ω
< 0.70
Ω
< 0.70
Ω
7 A
7 A
7 A
(1)
1
IPAK
TO-220
7 A
1. Limited
only by maximum temperature allowed
3
3
1
2
1
■
The worldwide best R
* area amongst the
DS(on)
DPAK
fast recovery diode devices
TO-220FP
■
100% avalanche tested
■
Low input capacitance and gate charge
■
Low gate input resistance
Figure 1.
Internal schematic diagram
■
Extremely high dv/dt and avalanche
capabilities
Application
■
Switching applications
Description
The FDmesh™ II series belongs to the second
generation of MDmesh™ technolog
y
.
T
his
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout and
associates all advantages of reduced on-
resistance and fast switching with an intrinsic fast-
recovery body diode.Strongly recommended for
bridge topologies, in ZVS phase-shift converters.
Table 1.
Device summary
Order codes
Marking
Package
D
P
A
K
Packaging
STD8NM60ND
STF8NM60ND
STP8NM60ND
STU8NM60ND
8NM60ND
8NM60ND
8NM60ND
8NM60ND
T
a
pe and reel
T
u
be
TO-220FP
TO-220
I
P
A
K
T
u
be
T
u
be
February 2009
Rev 1
1/17
17
Contents
STx8NM60ND
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/17
STx8NM60ND
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
TO-220 DPAK
IPAK TO-220FP
V
DS
V
GS
Drain-source voltage (V
GS
= 0)
Gate-source voltage
600
30
V
V
Drain current (continuous) at
T
C
= 25 °C
I
D
7
7
(1)
A
A
Drain current (continuous) at
T
C
= 100 °C
I
D
4.4
4.4
(1)
(2)
I
DM
Drain current (pulsed)
28
70
28
(1)
25
A
P
TOT
T
o
tal dissipation at T
C
= 25 °C
W
Insulation withstand voltage (RMS)
V
ISO
from all three leads to external heat
sink (t = 1 s;T
C
= 25 °C)
2500
V
dv/dt
(3)
Peak diode recovery voltage slope
40
V/ns
°C
T
stg
T
j
Storage temperature
-55 to 150
150
Max. operating junction temperature
°C
1. Limited
only by maximum temperature allowed
2. Pulse
width limited by safe operating area
3. I
SD
≤
7 A, di/dt
≤
400 A/µs, V
DD
= 80% V
(BR)DSS
Table 3.
Symbol
Thermal data
Parameter
Value
Unit
TO-220 DPAK
IPAK TO-220FP
R
thj-case
Thermal resistance junction-case
R
thj-amb
Thermal resistance junction-amb
R
thj-pcb
Thermal resistance junction-pcb
1.79
5
°C/W
°C/W
°C/W
62.5
100
62.5
50
Maximum lead temperature for
soldering purpose
T
l
300
°C
Table 4.
Symbol
Avalanche characteristics
Parameter
Max value
Unit
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
I
AS
2.5
A
Single pulse avalanche energy
E
AS
200
mJ
(starting Tj = 25 °C, I
D
= I
AS
, V
DD
= 50 V)
3/17
Electrical characteristics
STx8NM60ND
2
Electrical characteristics
(T
= 25 °C unless otherwise specified)
CASE
Table 5.
Symbol
On/off states
Parameter
Test conditions
I
D
= 1 mA, V
GS
= 0
DD
= 480
V
,
I
D
= 7 A,
Min. Typ. Max. Unit
Drain-source breakdown
voltage
V
(BR)DSS
600
V
V
dv/dt
(1)
Drain-source voltage slope
45
V/ns
V
GS
=10 V
V
DS
= Max rating,
1
µA
µA
Zero gate voltage drain
I
DSS
current (V
GS
= 0)
V
DS
= Max rating,Tc = 125 °C
100
Gate body leakage current
I
GSS
V
GS
= 20
V
100 nA
(V
DS
= 0)
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250 µA
3
4
5
V
Static drain-source on
resistance
R
DS(on)
V
GS
= 10
V
,
I
D
= 3.5 A
0.59 0.70
Ω
1. Characteristics
value at turn off on inductive load
Table 6.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max.
Unit
(1)
g
fs
Forward transconductance
V
DS
= 15
V
,
I
D
= 5 A
7.5
S
Input capacitance
C
iss
C
oss
C
rss
560
37
4
pF
pF
pF
Output capacitance
V
DS
= 50
V
, f = 1
M
Hz, V
GS
= 0
Reverse transfer
capacitance
Equivalent output
capacitance
(2)
C
oss eq.
V
GS
= 0, V
DS
= 0 to 480 V
90
6
pF
f = 1 MHz Gate DC Bias = 0
T
e
st Signal Level = 20 mV
Open Drain
R
G
Gate input resistance
Ω
Q
g
Q
gs
Q
gd
T
o
tal gate charge
Gate-source charge
Gate-drain charge
V
DD
= 480
V
,
I
D
= 7 A
V
GS
= 10 V
22
4
nC
nC
nC
13
1. Pulsed:
pulse duration = 300µs, duty cycle 1.5%
2. C
oss eq
. is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
4/17
STx8NM60ND
Electrical characteristics
Table 7.
Switching times
Parameter
Symbol
Test conditions
Min.
Typ. Max. Unit
t
d(on)
t
r
t
d(off)
t
f
T
u
rn-on delay time
Rise time
V
DD
= 300
V
,
I
D
= 7 A,
R
G
= 4.7
Ω,
V
GS
= 10 V
9
ns
ns
ns
ns
22
37
22
T
u
rn-off delay time
Fall time
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
Min.
Typ.
Max. Unit
I
SD
Source-drain current
7
A
A
(1)
I
SDM
Source-drain current (pulsed)
28
(2)
V
SD
Forward on voltage
I
SD
= 7 A, V
GS
= 0
1.3
V
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
120
0.49
8
ns
µC
A
I
SD
= 7 A, di/dt = 100
A/µs, V
DD
= 30
V
,
Q
rr
I
RRM
I
SD
= 7 A,
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
170
0.75
9
ns
µC
A
di/dt = 100 A/µs,
V
DD
= 30
V
,
T
j=150°C
Q
rr
I
RRM
1. Pulse
width limited by safe operating area
2. Pulsed:
pulse duration = 300 µs, duty cycle 1.5%
5/17
Electrical characteristics
STx8NM60ND
2.1
Electrical characteristics
Figure 2.
Safe operating area for TO-220
Figure 3.
Thermal impedance for TO-220
AM0
3
1
8
9v1
I
D
(A)
10
10
µs
100
µs
1
1m
s
10m
s
Tj=150°C
Tc=25°C
0.1
S
inlge
p
u
l
s
e
0.01
10
V
D
S
(V)
0.1
1
100
Figure 4.
Safe operating area for DPAK, IPAK Figure 5.
Thermal impedance for DPAK, IPAK
AM0
3
1
88
v1
I
D
(A)
10
10
µs
100
µs
1
1m
s
10m
s
Tj=150°C
0.1
Tc=25°C
S
inlge
p
u
l
s
e
0.01
10
V
D
S
(V)
0.1
1
100
Figure 6.
Safe operating area for TO-220FP
Figure 7.
Thermal impedance for TO-220FP
AM0
3
190v1
I
D
(A)
10
10
µs
100
µs
1
1m
s
10m
s
Tj=150°C
Tc=25°C
0.1
S
inlge
p
u
l
s
e
0.01
10
V
D
S
(V)
0.1
1
100
6/17
STx8NM60ND
Figure 8.
Electrical characteristics
Output characteristics
Figure 9.
Transfer characteristics
AM0
3
191v1
AM0
3
192v1
I
D
(A)
I
D
(A)
V
G
S
=10V
12
12
V
D
S
=15V
7V
10
10
8
8
6
6
6V
5V
4
2
4
2
0
0
0
5
2
20
25
V
D
S
(V)
8
10 V
G
S
(V)
10
15
3
0
0
4
6
Figure 10.
Transconductance
Figure 11.
Static-drain source on resistance
AM0
3
19
3
v1
AM0
3
194v1
G
F
S
(
S
)
R
D
S
(on)
(
Ω
)
T
J
=-50°C
I
D
=
3
.5A
V
G
S
=10V
0.069
0.064
0.059
8
.5
T
J
=25°C
6.5
4.5
T
J
=150°C
0.054
0.049
2.5
0.5
0.044
0.0
3
9
5
10
4
6
2
I
D
(A)
I
D
(A)
0
0
Figure 12.
Gate charge vs gate-source voltage
Figure 13.
Capacitance variations
AM0
3
195v1
AM0
3
196v1
V
G
S
C
(V)
(pF)
V
DD
=4
8
0V
12
10
8
500
400
3
00
200
V
G
S
I
D
=7A
V
D
S
1000
100
Ci
ss
6
Co
ss
Cr
ss
4
2
0
10
1
100
0
10
20
0.1
100
25
Q
g
(nC)
V
D
S
(V)
0
5
15
1
10
7/17
Electrical characteristics
STx8NM60ND
Figure 14.
Normalized gate threshold voltage
Figure 15.
Normalized on resistance vs
vs temperature
temperature
AM0
3
197v1
AM0
3
19
8
v1
V
G
S
(th)
R
D
S
(on)
(norm)
(norm)
1.9
1.7
1.5
1.
3
1.1
0.9
1.00
0.90
0.
8
0
0.7
0.5
0.70
-50
-50
-25
0
25 50 75
T
J
(°C)
-25
0
25 50 75
T
J
(°C)
100
100
Figure 16.
Source-drain diode forward
characteristics
Figure 17.
Normalized BV
vs temperature
DSS
AM0
3
199v1
AM0
3
1200v1
BV
D
SS
(norm)
V
(V)
S
D
1.07
1.05
1.0
3
1.01
0.99
0.97
T
J
=-50°C
1.2
1.0
0.
8
0.6
0.4
T
J
=25°C
T
J
=150°C
0.2
0
0.95
0.9
3
0
-50
-25
10
20
3
0
40
50 I
S
D
(A)
0
25 50 75
T
J
(°C)
100
8/17
STx8NM60ND
Test circuits
3
Test circuits
Figure 18.
Switching times test circuit for
resistive load
Figure 19.
Gate charge test circuit
Figure 20.
Test circuit for inductive load
switching and diode recovery times
Figure 21.
Unclamped inductive load test
circuit
Figure 22.
Unclamped inductive waveform
Figure 23.
Switching time waveform
9/17
Package mechanical data
STx8NM60ND
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECO
P
ACK® packages, depending on their level of environmental compliance. ECO
P
ACK®
ECO
P
ACK® is an ST trademark.
10/17
STx8NM60ND
Package mechanical data
TO-220 mechanical data
mm
inch
Dim
Min
Typ
Max
Min
Typ
Max
A
b
4.40
0.61
1.14
0.4
8
15.25
4.60
0.
88
1.70
0.70
15.75
0.17
3
0.024
0.044
0.01
9
0.6
0.1
8
1
0.0
3
4
0.066
0.027
0.62
b
1
c
D
D1
E
1.27
0.050
10
10.40
2.70
5.15
1.
3
2
6.60
2.72
14
0.
393
0.0
9
4
0.1
9
4
0.04
8
0.244
0.0
9
4
0.511
0.1
3
7
0.40
9
0.106
0.202
0.051
0.256
0.107
0.551
0.154
e
2.40
4.
9
5
1.2
3
6.20
2.40
1
3
e1
F
H1
J1
L
L1
L20
L
3
0
∅
P
Q
3
.50
3
.
93
16.40
0.645
2
8
.
9
0
1.1
3
7
3
.75
3
.
8
5
2.
9
5
0.147
0.104
0.151
0.116
2.65
11/17
Package mechanical data
STx8NM60ND
TO-220FP mechanical data
mm
Dim.
Min.
Typ.
Max.
A
B
4.4
2.5
4.6
2.7
2.75
0.7
1
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
F1
F2
G
1.70
1.5
5.2
2.7
10.4
G1
H
10
L2
L
3
L4
L5
L6
L7
Di
a
16
2
8
.6
9.
8
2.9
15.9
9
3
0.6
10.6
3
.6
16.4
9.
3
3
3
.2
L7
E
A
B
D
Di
a
L5
L6
F2
F1
F
G
H
G1
L4
L2
L
3
7012510_Rev_J
12/17
STx8NM60ND
Package mechanical data
TO-251 (IPAK) mechanical data
mm.
typ
DIM.
min.
2.20
0.
9
0
0.64
max.
2.40
1.10
0.
9
0
0.
9
5
5.40
0.60
0.60
6.20
6.60
A
A1
b
b
2
b
4
c
5.20
0.45
0.4
8
6.00
6.40
c2
D
E
e
2.2
8
e1
H
4.40
4.60
16.10
L
9
.00
0.
8
0
9
.40
(L1)
L2
V1
1.20
0.
8
0
10
o
006
8
771_H
13/17
Package mechanical data
STx8NM60ND
TO-252 (DPAK) mechanical data
mm.
DIM.
min.
typ
max.
A
A1
A2
b
2.20
0.
9
0
0.0
3
0.64
5.20
0.45
0.4
8
6.00
2.40
1.10
0.2
3
0.
9
0
5.40
0.60
0.60
6.20
b
4
c
c2
D
D1
E
5.10
6.40
6.60
E1
e
4.70
2.2
8
e1
H
4.40
9
.
3
5
1
4.60
10.10
L
L1
L2
L4
R
2.
8
0
0.
8
0
0.60
0
o
1
0.20
8
o
V2
006
8
772_G
14/17
STx8NM60ND
Packaging mechanical data
5
Packaging mechanical data
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
16.4
50
0.059
13.2 0.504
0.520
0.795
18.4 0.645
0.724
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
TAPE MECHANICAL DATA
2500
mm
MIN. MAX. MIN. MAX.
6.8 0.267
0.275
10.4 10.6
0.409 0.417
12.1 0.476
inch
DIM.
A0
B0
B1
D
7
1.5
1.5
1.6 0.059
0.063
0.059
D1
E
1.65 1.85
0.065 0.073
7.4 7.6
0.291 0.299
2.55 2.75
0.100 0.108
F
K0
P0
P1
P2
R
3.9
7.9
1.9
40
4.1 0.153
0.161
8.1 0.311
0.319
2.1 0.075
0.082
1.574
W
15.7
16.3 0.618
0.641
15/17
Revision history
STx8NM60ND
6
Revision history
Table 9.
Date
09-Feb-2009
Document revision history
Revision
Changes
1
First release
16/17
STx8NM60ND
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17/17
