STMicroelectronics-STFI10N62K3
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STF10N62K3, STFI10N62K3,
STI10N62K3, STP10N62K3
N-channel 620
V
,
0
.68
Ω
typ., 8.4 A SuperMESH3™
Power MOSFET in TO-220F
P
,
I
²
P
A
KF
P
,
I
²
P
A
K, TO-220 packages
Datasheet
−
production data
Features
R
DS(on)
max
Type
V
DSS
I
D
P
w
3
2
STF10N62K3
STFI10N62K3
STI10N62K3
STP10N62K3
1
1
8.4 A
(1)
30 W
2
3
TO-220FP
I²PAKFP
620 V
< 0.75
Ω
TAB
T
A
B
8.4 A
125 W
1. Limited
by package
3
2
3
■
100% avalanche tested
2
1
1
I²
P
A
K
TO-220
■
Extremely high dv/dt capability
■
Gate charge minimized
■
Very low intrinsic capacitances
Figure 1.
Internal schematic diagram
■
Improved diode reverse recovery
characteristics
‘ꢀꢁꢂꢃ7$%ꢄ
■
Zener-protected
Applications
■
Switching applications
*ꢀꢅꢄ
Description
These SuperMESH3™ Power MOSFETs are the
result of improvements applied to
STMicroelectronics’ SuperMESH™ technolog
y
,
combined with a new optimized vertical structure.
These devices boast an extremely low on-
resistance, superior dynamic performance and
high avalanche capabilit
y
,
r
endering them suitable
for the most demanding applications.
6ꢀꢆꢄ
AM01476v1
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STF10N62K3
STFI10N62K3
STI10N62K3
STP10N62K3
10N62K3
10N62K3
10N62K3
10N62K3
TO-220FP
I²
P
A
KFP
I²
P
A
K
T
u
be
TO-220
September 2012
Doc ID 15640 Rev 4
1/17
This is information on a product in full production.
17
Contents
STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/17
Doc ID 15640 Rev 4
STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Value
Parameter
Unit
I²
P
A
K
TO-220FP
I²
P
A
KFP
TO-220
V
DS
V
GS
I
D
Drain source voltage
620
30
V
V
Gate-source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
8.4
(1)
5.2
(1)
33.6
(1)
30
8.4
5.2
A
A
I
D
(2)
I
DM
33.6
125
A
P
TOT
I
AR
T
o
tal dissipation at T
C
= 25 °C
Max current during repetitive or single pulse
W
8
A
avalanche (pulse width limited by T
JMAX
)
E
AS
Single pulse avalanche energy
(3)
220
12
mJ
dv/dt
(4)
Peak diode recovery voltage slope
V/ns
Gate-source human body model (R = 1.5 k
Ω
, C
ESD
V
ISO
2.5
kV
V
= 100 pF)
Insulation withstand voltage (RMS) from all
three leads to external heat sink
2500
(t=1 s;T
C
=25 °C)
T
j
Operating junction temperature
Storage temperature
-55 to 150
°C
T
stg
1. Limited
by maximum junction temperature
2. Pulse
width limited by safe operating area
3. Starting
T =
25 °C, I
= I
, V
= 50 V
j
D
AR DD
4.
I
≤
8.4 A, di/dt = 400 A/µs, V
= 80% V
, V
≤
V
SD
DD
(BR)DSS DS
peak (BR)DSS
T
a
ble 3.
Symbol
Thermal data
Value
Parameter
Unit
I²
P
A
K
TO-220FP
I²
P
A
KFP
TO-220
R
thj-case
Thermal resistance junction-case max
Rt
hj-amb
Thermal resistance junction-ambient max
4.17
1.00
°C/W
°C/W
62.5
Doc ID 15640 Rev 4
3/17
Electrical characteristics
STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3
2
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
T
a
ble 4.
Symbol
On /off states
Parameter
Test conditions
I
D
= 1 mA, V
GS
= 0
V
DS
= 620 V
Min.
Typ.
Max. Unit
Drain-source
breakdown voltage
V
(BR)DSS
620
V
Zero gate voltage
1
µA
µA
I
DSS
drain current (V
GS
= 0)
V
DS
= 620
V
,
T
C
=125 °C
50
Gate-body leakage
I
GSS
V
GS
=
20 V
10
µA
V
current (V
DS
= 0)
V
GS(th)
R
DS(on)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 100 µA
Static drain-source on
3
3.75
0.68
4.5
V
GS
= 10
V
,
I
D
= 4 A
0.75
Ω
resistance
T
a
ble 5.
Symbol
Dynamic
Parameter
Test conditions
Min.
Typ.
Max. Unit
Forward
transconductance
(1)
g
fs
V
DS
= 15
V
,
I
D
= 4 A
–
6
–
S
Input capacitance
Output capacitance
C
iss
C
oss
C
rss
1250
138
16
pF
pF
pF
V
DS
= 50
V
, f = 1
M
Hz,
V
GS
= 0
–
–
Reverse transfer
capacitance
Equivalent
capacitance time
related
(2)
C
o(tr)
V
DS
= 0 to 496
V
,
V
GS
= 0
DS
= 0 to 496
V
,
V
GS
= 0
–
–
–
56
38
–
–
–
pF
pF
Ω
Equivalent
capacitance energy
related
(3)
C
o(er)
V
f=1 MHz Gate DC Bias=0
T
e
st
R
G
Gate input resistance
signal level = 20 mV open
drain
3.5
Q
g
Q
gs
Q
gd
T
o
tal gate charge
Gate-source charge
Gate-drain charge
V
DD
= 496
V
,
I
D
= 8 A,
V
GS
= 10 V
42
7.4
23
nC
nC
nC
–
–
1. Pulsed:
pulse duration = 300 µs, duty cycle 1.5%
2.
C
time related is defined as a constant equivalent capacitance giving the same charging time as C
oss eq.
oss
when V
increases from 0 to 80% V
DS
DSS
3.
C
C
energy related is defined as a constant equivalent capacitance giving the same stored energy as
oss eq.
oss
when V
increases from 0 to 80% V
DSS
DS
4/17
Doc ID 15640 Rev 4
STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3
Electrical characteristics
Min. Typ. Max.
Unit
T
a
ble 6.
Symbol
Switching times
Parameter
Test conditions
t
d(on)
t
r
t
d(off)
t
f
T
u
rn-on delay time
Rise time
14.5
15
ns
ns
ns
ns
V
DD
= 310
V
,
I
D
= 4 A,
R
G
= 4.7
Ω
,
V
GS
= 10 V
–
–
T
u
rn-off-delay time
Fall time
41
31
T
a
ble 7.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max.
Unit
I
SD
Source-drain current
8.4
A
A
–
–
(1)
I
SDM
Source-drain current (pulsed)
33.6
(2)
V
SD
Forward on voltage
I
SD
= 8 A, V
GS
= 0
1.5
V
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
320
2
ns
µC
A
I
SD
= 8 A, di/dt = 100A/µs
Q
rr
–
–
I
RRM
13
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 8 A, di/dt = 100 A/µs
DD
= 60
V
,
T
j
= 150 °C
410
2.9
14
ns
µC
A
Q
rr
V
I
RRM
1. Pulse
width limited by safe operating area
2. Pulsed:
Pulse duration = 300 µs, duty cycle 1.5%
Table 8.
Symbol
Gate-source Zener diode
Parameter
Test conditions
Igs= 1
mA
Min. Typ. Max.
Unit
30
Gate-source breakdown
voltage (ID = 0)
V
(BR)GSO
–
V
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capabilit
y
, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrit
y
.
T
hese integrated Zener diodes thus avoid the usage of external components.
Doc ID 15640 Rev 4
5/17
Electrical characteristics
STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220F
P
,
F
igure 3.
I²
P
A
KFP
Thermal impedance for TO-220F
P
,
I²
P
A
KFP
AM0
3
910v1
I
D
(A)
10
10
µs
100
µs
1
1m
s
10m
s
Tj=150°C
Tc=25°C
0.1
S
inlge
p
u
l
s
e
0.01
10
V
D
S
(V)
0.1
1
100
Figure 4.
Safe operating area for I²
P
A
K, TO-
Figure 5.
220
Thermal impedance for I²
P
A
K, TO-
220
AM0
3
909v1
I
D
(A)
10
10
µs
100
µs
1m
s
1
Tj=150°C
10m
s
Tc=25°C
S
inlge
p
u
l
s
e
0.1
10
V
D
S
(V)
0.1
1
100
Figure 6.
Output characteristics
Figure 7.
Transfer characteristics
AM0
3
912v1
AM0
3
911v1
I
D
I
D
(A)
(A)
V
G
S
=10V
1
8
16
14
12
12
10
7V
8
6
4
VD
S
= 15 V
10
6V
5V
8
6
4
2
0
2
0
2
3
20
V
D
S
(V)
1
4
5
6
7
8
9
V
G
S
(V)
0
10
6/17
Doc ID 15640 Rev 4
STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3
Electrical characteristics
Figure 8.
Normalized BV
DSS
vs temperature
Figure 9.
Static drain-source on-resistance
AM0
3
91
3
v1
AM0
3
914v1
BV
D
SS
(norm)
R
D
S
(on)
(
Ω
)
0.07
8
V
G
S
=10V
1.10
1.05
1.00
0.076
ID = 1 mA
0.074
0.072
0.070
0.06
8
0.95
0.90
0.066
2
3
5
6
7
8
1
4
-50
-25
0
25 50
75
T
150
J
(°C)
0
I
D
(A)
100 125
Figure 10.
Output capacitance stored energy
Figure 11.
Capacitance variations
AM0
3
917v1
AM0
3
916v1
E
co
ss
C
(
µ
J)
(pF)
7
6
Ci
ss
1000
5
4
3
100
10
2
Co
ss
Cr
ss
1
0
0
200
400 500
0.1
100
100
3
00
600
V
D
S
(V)
1
10
V
D
S
(V)
Figure 12.
Gate charge vs gate-source voltage
Figure 13.
Normalized on-resistance vs
temperature
AM0
3
915v1
AM0
3
919v1
V
G
S
(V)
R
D
S
(on)
(norm)
V
D
S
(V)
V
DD
=496V
12
10
8
500
400
3
00
200
I
D
=
8
A
V
D
S
2.0
1.5
1.0
VGS = 10 V
ID = 4 A
6
4
2
0
100
0
0.5
0.0
10
3
0
-50
-25
40
Q
g
(nC)
25
50 75
100
T
J
(°C)
150
0
20
0
125
Doc ID 15640 Rev 4
7/17
Electrical characteristics
STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3
Figure 14.
Normalized gate threshold voltage
Figure 15.
Maximum avalanche energy vs
vs temperature
temperature
AM0
3
91
8
v1
AM0
3
921v1
V
G
S
(th)
E
A
S
(norm)
(mJ)
1.10
I
V
D
=
8
A
220
200
DD
=50 V
ID = 100 µA
1
8
0
160
140
120
100
1.00
0.90
8
0
60
40
20
0
0.
8
0
0.70
-50
0
-25
0
25 50
75
125
T
J
(°C)
20 40
60
8
0 100
120
140 T
J
(°C)
100
150
Figure 16.
Source-drain diode forward
characteristics
AM0
3
920v1
V
S
D
(V)
T
J
=-50°C
0.9
0.
8
T
J
=25°C
0.7
0.6
T
J
=150°C
0.5
0.4
0.
3
70
8
0
I
S
D
(A)
0
10
20
3
0 40
50 60
8/17
Doc ID 15640 Rev 4
STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3
Test circuits
3
Test circuits
Figure 17.
Switching times test circuit for
resistive load
Figure 18.
Gate charge test circuit
V
DD
12V
47k
Ω
1k
Ω
100nF
2200
3
.
3
µ
F
R
L
µ
F
I
G
=CON
S
T
V
DD
100
Ω
V
i
=20V=V
GMAX
D.U.
T
.
V
G
V
D
R
G
V
G
S
2200
µ
F
D.U.
T
.
2.7k
Ω
47k
Ω
P
W
1k
Ω
P
W
AM0146
8
v1
AM01469v1
Figure 19.
Test circuit for inductive load
switching and diode recovery times
Figure 20.
Unclamped inductive load test
circuit
L
A
A
A
B
D
FA
S
T
DIODE
L=100
µ
H
V
D
G
2200
µ
F
D.U.
T
.
B
3
.
3
µ
F
V
DD
S
3
.
3
µ
F
1000
µ
F
B
V
DD
25
Ω
I
D
D
G
R
G
S
V
i
D.U.
T
.
P
w
AM01470v1
AM01471v1
Figure 21.
Unclamped inductive waveform
Figure 22.
Switching time waveform
t
on
t
off
td
off
V
(BR)D
SS
t
r
t
f
td
on
V
D
90
%
10
%
90
%
I
DM
10
%
V
D
S
I
D
0
0
V
DD
V
DD
90
%
V
G
S
10
%
AM01472v1
AM0147
3
v1
Doc ID 15640 Rev 4
9/17
Package mechanical data
STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECO
P
A
CK
®
packages, depending on their level of environmental compliance. ECO
P
ACK
®
is an ST trademark.
T
a
ble 9.
Dim.
TO-220FP mechanical data
mm
Min.
Typ.
Max.
A
B
4.4
2.5
4.6
2.7
D
2.5
2.75
0.7
E
0.45
0.75
1.15
1.15
4.95
2.4
F
1
F1
F2
G
1.70
1.70
5.2
G1
H
2.7
10
10.4
L2
L3
L4
L5
L6
L7
Dia
16
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
16.4
9.3
3
3.2
10/17
Doc ID 15640 Rev 4
STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3
Figure 23.
TO-220FP drawing
Package mechanical data
7012510_Rev_K_B
Doc ID 15640 Rev 4
11/17
Package mechanical data
STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3
T
a
ble 10.
I
2
P
A
KFP (TO-281) mechanical data
mm
Dim.
Min.
Typ.
Max.
A
B
4.40
2.50
2.50
0.65
0.45
0.75
4.60
2.70
2.75
0.85
0.70
1.00
1.20
5.20
10.40
23.00
14.10
10.85
3.20
1.25
7.50
D
D1
E
F
F1
G
4.95
10.00
21.00
13.20
10.55
2.70
–
H
L1
L2
L3
L4
L5
L6
0.85
7.30
Figure 24.
I
2
P
A
KFP (TO-281) drawing
ꢀꢁꢂꢃꢄꢅꢆ REVꢇ!
12/17
Doc ID 15640 Rev 4
STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3
Table 11.
I²
P
A
K (TO-262) mechanical data
Package mechanical data
mm.
typ
DIM.
min.
max.
A
A1
b
4.40
2.40
0.61
1.14
0.49
1.23
8.95
2.40
4.95
10
4.60
2.72
0.88
1.70
0.70
1.32
9.35
2.70
5.15
10.40
14
b1
c
c2
D
e
e1
E
L
13
L1
L2
3.50
1.27
3.93
1.40
Figure 25.
I²
P
A
K (TO-262) drawing
00049
8
2_Rev_H
Doc ID 15640 Rev 4
13/17
Package mechanical data
STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3
T
a
ble 12.
TO-220 type A mechanical data
Dim.
mm
Min.
Typ.
Max.
A
b
4.40
0.61
1.14
0.48
15.25
4.60
0.88
1.70
0.70
15.75
b1
c
D
D1
E
1.27
10
10.40
2.70
5.15
1.32
6.60
2.72
14
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
∅
P
Q
3.50
3.93
16.40
28.90
3.75
2.65
3.85
2.95
14/17
Doc ID 15640 Rev 4
STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3
Figure 26.
TO-220 type A drawing
Package mechanical data
00159
88
_typeA_Rev_
S
Doc ID 15640 Rev 4
15/17
Revision history
STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3
5
Revision history
T
a
ble 13.
Document revision history
Date
Revision
Changes
08-Jun-2009
22-Jun-2009
1
2
First release.
Added new package, mechanical data: I²
P
A
K
Added package, mechanical data: I²
P
A
KFP
06-Aug-2012
13-Sep-2012
3
4
Minor text changes.
Changed value in the title from 3.8 A to 8.4 A.
16/17
Doc ID 15640 Rev 4
STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
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