STMicroelectronics-STFI10N65K3
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STB10N65K3, STF10N65K3,
STFI10N65K3, STP10N65K3
N-channel 650
V
,
0
.75
Ω
typ., 10 A SuperMESH3™ Power MOSFE
T
s
2
2
in D
PAK, TO-220F
P
, I
P
A
KFP and TO-220 packages
Datasheet production
data
–
Features
TAB
Order codes
V
DS
R
DS(on)
max
I
D
P
TOT
3
1
3
STB10N65K3
STF10N65K3
STFI10N65K3
STP10N65K3
150 W
2
2
D PAK
1
TO-220FP
650 V
1
Ω
10 A
35 W
150 W
TAB
•
100% avalanche tested
3
•
Extremely low on-resistance R
DS(on)
•
Gate charge minimized
2
1
2
I PAKFP (TO-281)
TO-220
•
Very low intrinsic capacitances
•
Improved diode reverse recovery
Figure 1. Internal schematic diagram
characteristics
‘ꢀꢁꢂꢃ7$%ꢄ
•
Zener-protected
Applications
•
Switching applications
*ꢀꢅꢄ
Description
These SuperMESH3™ Power MOSFE
T
s
a
re the
result of improvements applied to
STMicroelectronics’ SuperMESH™ technology,
combined with a new optimized vertical structure.
These devices boast an extremely low on-
resistance, superior dynamic performance and
high avalanche capability, rendering them suitable
for the most demanding applications.
6ꢀꢆꢄ
AM01476v1
Table 1. Device summary
Order codes
Marking
Package
Packaging
STB10N65K3
STF10N65K3
STFI10N65K3
STP10N65K3
D
2
PAK
T
a
pe and reel
TO-220FP
10N65K3
I
2
PAKFP (TO-281)
TO-220
Tube
August 2013
DocID15732 Rev 4
1/21
This is information on a product in full production.
Contents
STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
2/21
DocID15732 Rev 4
STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Value
Symbol
Parameter
Unit
D
2
PAK,
TO-220
TO-220FP
I
2
PAKFP
V
DS
V
GS
I
D
Drain source voltage
650
± 30
10
V
V
A
A
A
Gate-source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
I
D
6.3
40
(1)
I
DM
P
TOT
I
AR
T
o
tal dissipation at T
C
= 25 °C
Max current during repetitive or single pulse
35
150
1.2
W
A
7.2
avalanche (pulse width limited by T
JMAX
Single pulse avalanche energy
(2)
Derating factor
)
E
AS
212
mJ
0.28
W/°C
V/ns
dv/dt
(3)
Peak diode recovery voltage slope
12
Gate-source human body model
ESD
2.8
kV
V
(R = 1.5 k
Ω
, C = 100 pF)
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t=1 s; T
C
=25 °C)
V
ISO
2500
T
j
Operating junction temperature
Storage temperature
°C
°C
-55 to 150
T
stg
1. Pulse
width limited by safe operating area.
2. Starting
T =
25 °C, I
= I
, V
= 50 V
j
D
AR DD
3.
I
≤
10 A, di/dt = 100 A/µs, V
< V
Peak (BR)DSS
SD
Table 3. Thermal data
Value
Symbol
Parameter
Unit
TO-220FP
I
2
PAKFP
D
2
PAK
TO-220
R
thj-case
Thermal resistance junction-case max
R
thj-amb
Thermal resistance junction-ambient max
R
thj-pcb
Thermal resistance junction-pcb max
0.83
3.57
0.83
°C/W
°C/W
°C/W
62.5
30
DocID15732 Rev 4
3/21
21
Electrical characteristics
STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3
2
Electrical characteristics
(
T
c
ase = 25 °C unless otherwise specified)
Table 4. On /off states
Test conditions
Symbol
Parameter
Drain-source
Min.
Typ.
Max. Unit
V
(BR)DSS
I
D
= 1 mA, V
GS
= 0
650
V
breakdown voltage
1
µA
µA
Zero gate voltage
V
DS
= 650 V
I
DSS
drain current (V
GS
= 0)
V
DS
= 650
V
, T
C
=125 °C
50
Gate-body leakage
V
GS
= ± 20 V
I
GSS
±10
4.5
1
µA
V
current (V
DS
= 0)
V
GS(th)
R
DS(on)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 100 µA
3
Static drain-source on-
V
GS
= 10
V
,
I
D
= 3.6 A
resistance
0.75
Ω
Table 5. Dynamic
Symbol
Parameter
Input capacitance
Output capacitance
Test conditions
Min.
Typ.
1180
125
Max. Unit
C
iss
–
–
–
–
pF
pF
V
V
DS
= 25 V, f = 1 MHz,
GS
= 0
C
oss
C
rss
Reverse transfer
capacitance
–
–
–
14
77
3
–
–
–
pF
pF
Ω
Equivalent output
capacitance
C
oss eq.
R
G
V
DS
= 0 to 520
V
, V
GS
= 0
Intrinsic gate
resistance
f=1 MHz, I
D
=0
DD
= 520 V, I
D
= 7.2 A,
Q
g
Q
gs
Q
gd
T
o
tal gate charge
Gate-source charge
Gate-drain charge
–
–
–
42
7.4
23
–
–
–
nC
nC
nC
V
V
GS
= 10 V
Table 6. Switching times
Test conditions
Symbol
Parameter
Min. Typ.
Max Unit
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
–
–
–
–
14.5
14
–
–
–
–
ns
ns
ns
ns
V
DD
= 310
V
, I
D
= 3.5 A,
R
G
= 4.7
Ω,
V
GS
= 10 V
Turn-off-delay time
Fall time
44
35
4/21
DocID15732 Rev 4
STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3
Electrical characteristics
Min. Typ. Max.
Unit
Table 7. Source drain diode
Test conditions
Symbol
Parameter
I
SD
Source-drain current
–
7.2
28.8
1.5
A
A
(1)
I
SDM
Source-drain current (pulsed)
Forward on voltage
(2)
V
SD
I
SD
= 7 A, V
GS
= 0
–
–
–
–
–
–
–
V
t
rr
Q
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
320
2
ns
µC
A
I
SD
= 7 A, di/dt = 100A/µs
I
RRM
t
rr
13
410
2.9
14
ns
µC
A
I
SD
= 7 A, di/dt = 100 A/µs
Q
rr
V
DD
= 60 V, T
j
= 150 °C
I
RRM
1. Pulse
width limited by safe operating area.
2. Pulsed:
Pulse duration = 300 µs, duty cycle 1.5%
Table 8. Gate-source Zener diode
Parameter Test
conditions
Symbol
Min Typ.
Max. Unit
30
V
(BR)GSO
Gate-source breakdown voltage
I
GS
= ± 1mA, I
D
=0
–
–
V
The built-in back-to-back Zener diodes have been specifically designed to enhance not only
the device’s ESD capability, but also to make them capable of safely absorbing any voltage
transients that may occasionally be applied from gate to source. In this respect, the Zener
voltage is appropriate to achieve efficient and cost-effective protection of device integrity.
The integrated Zener diodes thus eliminate the need for external components.
DocID15732 Rev 4
5/21
21
Electrical characteristics
STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3
2.1
Electrical characteristics (curves)
Figure 2. Safe operating area for D
2
PAK and
TO-220
Figure 3. Thermal impedance for D
2
PAK and
TO-220
AM15460v1
I
D
(A)
1µs
10
10µs
10µs
1ms
1
Tj=150°C
10ms
Tc=25°C
Sinlge
pulse
0.1
0.1
10
V
DS
(V)
1
100
Figure 4. Safe operating area for TO-220FP and
Figure 5. Thermal impedance for TO-220FP and
I
2
PAKFP
I
2
PAKFP
AM03922v1
I
D
(A)
10
10µs
100µs
1ms
1
10ms
Tj=150°C
Tc=25°C
0.1
Sinlge
pulse
0.01
10
V
DS
(V)
0.1
1
100
Figure 6. Output characteristics
Figure 7. Transfer characteristics
AM03923v1
AM03924v1
I
D
(A)
I
D
(A)
18
12
11
10
9
8
7
6
5
4
3
2
V
DS =
15
V
16
14
12
10
8
7V
V
GS
=10V
6V
5V
6
4
2
0
1
0
1
2
3
4
20
V
DS
(V)
8
9
V
GS
(V)
0
10
5
6
7
6/21
DocID15732 Rev 4
STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3
Electrical characteristics
Figure 8. Normalized BV
DSS
vs temperature
Figure 9. Static drain-source on resistance
AM03925v1
AM03926v1
BV
DSS
(norm)
R
DS(on)
(
Ω
)
0.95
V
GS
= 10 V
1.10
0.90
I
D
= 1 mA
0.85
0.80
0.75
0.70
0.65
0.60
1.05
1.00
0.95
0.90
2
3
4
5
6
7
1
-75
-50
-25
0
25 50
75
T
J
(°C)
0
I
D
(A)
100 125 150
Figure 10. Output capacitance stored energy
Figure 11. Capacitance variations
AM03929v1
AM03928v1
C
(pF)
E
(µJ)
oss
8
7
6
1000
Ciss
100
10
5
4
3
2
1
Coss
Crss
1
0.1
0
0
200
400 500
100
100
300
600 V
DS
(V)
1
10
V
DS
(V)
Figure 12.
Gate charge vs gate-source voltage
Figure 13. Normalized on-resistance vs
temperature
AM03927v1
AM03931v1
V
(V)
GS
R
DS(on)
(norm)
V
DS
(V)
V
DD
=520V
=7A
12
2.5
500
I
D
I
D
= 1.2 A
10
8
2.0
1.5
1.0
400
300
200
6
4
2
0
0.5
0.0
100
0
20
40
-50
-25
50
Q
g
(nC)
25
0
10
30
0
50 75
100
125
150
T
J
(°C)
DocID15732 Rev 4
7/21
21
Electrical characteristics
STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3
Figure 14. Normalized gate threshold voltage vs
temperature
Figure 15. Maximum avalanche energy vs
temperature
AM03930v1
AM03933v1
V
GS(th)
E
AS
(norm)
1.10
(mJ)
I
D
=7.2 A
220
V
DD
=50 V
I
D
= 100 µA
200
180
160
140
120
100
80
1.00
0.90
60
0.80
0.70
40
20
0
-50
0
120
20 40 60 80
100 140
T
-25
0
25 50 75
T
J
(°C)
J
(°C)
100
125 150
Figure 16. Source-drain diode forward
characteristics
AM03932v1
V
SD
(V)
T
J
=-50°C
0.9
0.8
0.7
0.6
T
J
=25°C
T
J
=150°C
0.5
0.4
0.3
0
1
2
3
4
5
6
8
I
SD
(A)
7
8/21
DocID15732 Rev 4
STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3
Test circuits
3
Test circuits
Figure 17. Switching times test circuit for
resistive load
Figure 18. Gate charge test circuit
V
DD
12V
47k
Ω
1k
Ω
100nF
2200
μ
F
3.3
μ
F
R
L
I
G
=CONST
V
DD
100
Ω
V
i
=20V=V
GMAX
D.U.T.
V
D
R
G
V
GS
2200
μ
F
D.U.T.
V
G
2.7k
Ω
47k
Ω
P
W
1k
Ω
P
W
AM01468v1
AM01469v1
Figure 19. Test circuit for inductive load
switching and diode recovery times
Figure 20. Unclamped inductive load test circuit
L
A
A
A
B
D
S
FAST
DIODE
L=100
μ
H
V
D
G
2200
μ
F
D.U.T.
B
3.3
μ
F
V
DD
3.3
μ
F
1000
μ
F
B
V
DD
25
Ω
I
D
D
G
R
G
S
V
i
D.U.T.
P
w
AM01470v1
AM01471v1
Figure 21. Unclamped inductive waveform
Figure 22. Switching time waveform
t
on
t
off
td
off
V
(BR)DSS
t
r
t
f
td
on
V
D
90%
10%
90%
I
DM
10%
V
GS
V
DS
I
D
0
0
V
DD
V
DD
90%
10%
AM01472v1
AM01473v1
DocID15732 Rev 4
9/21
21
Package mechanical data
STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
ECOPACK
®
is an ST trademark.
10/21
DocID15732 Rev 4
STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3
Package mechanical data
Table 9. D²PAK (TO-263) mechanical data
mm
Dim.
Min.
Typ.
Max.
A
A1
b
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
10
4.60
0.23
0.93
1.70
0.60
1.36
9.35
b2
c
c2
D
D1
E
10.40
E1
e
8.50
2.54
e1
H
4.88
15
5.28
15.85
2.69
2.79
1.40
1.75
J1
L
2.49
2.29
1.27
1.30
L1
L2
R
0.4
V2
0°
8°
DocID15732 Rev 4
11/21
21
Package mechanical data
STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3
Figure 23. D²PAK (TO-263) drawing
0079457_T
Figure 24. D²PAK footprint
(a)
16.90
12.20
5.08
1.60
3.50
9.75
Footprint
a. All
dimension are in millimeters
12/21
DocID15732 Rev 4
STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3
Package mechanical data
Table 10. TO-220FP mechanical data
mm
Dim.
Min.
Typ.
Max.
A
B
4.4
2.5
4.6
2.7
D
2.5
2.75
0.7
E
0.45
0.75
1.15
1.15
4.95
2.4
F
1
F1
F2
G
1.70
1.70
5.2
G1
H
2.7
10
10.4
L2
L3
L4
L5
L6
L7
Dia
16
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
16.4
9.3
3
3.2
DocID15732 Rev 4
13/21
21
Package mechanical data
STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3
Figure 25. TO-220FP drawing
7012510_Rev_K_B
14/21
DocID15732 Rev 4
STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3
Package mechanical data
Table 11. I
2
PAKFP (TO-281) mechanical data
mm
Dim.
Min.
Typ.
Max.
A
B
4.40
2.50
2.50
0.65
0.45
0.75
4.60
2.70
2.75
0.85
0.70
1.00
1.20
5.20
10.40
23.00
14.10
10.85
3.20
1.25
7.50
D
D1
E
F
F1
G
4.95
10.00
21.00
13.20
10.55
2.70
–
H
L1
L2
L3
L4
L5
L6
0.85
7.30
Figure 26. I
2
PAKFP (TO-281) drawing
ꢀꢁꢂꢃꢄꢅꢆꢇUHYꢈ$
DocID15732 Rev 4
15/21
21
Package mechanical data
STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3
Table 12. TO-220 type A mechanical data
mm
Dim.
Min.
Typ.
Max.
A
b
4.40
0.61
1.14
0.48
15.25
4.60
0.88
1.70
0.70
15.75
b1
c
D
D1
E
1.27
10
10.40
2.70
5.15
1.32
6.60
2.72
14
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
3.50
3.93
16.40
28.90
∅
Q
P
3.75
2.65
3.85
2.95
16/21
DocID15732 Rev 4
STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3
Package mechanical data
Figure 27. TO-220 type A drawing
ꢅꢅꢃꢄꢂꢀꢀBWSH$B5HYB7
DocID15732 Rev 4
17/21
21
Packaging mechanical data
STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3
5
Packaging mechanical data
Table 13. D²PAK (TO-263) tape and reel mechanical data
Tape Reel
mm
mm
Dim.
Dim.
Min.
Max.
Min.
Max.
A0
B0
D
10.5
15.7
1.5
10.7
15.9
1.6
A
B
C
D
G
N
T
330
1.5
12.8
20.2
24.4
100
13.2
26.4
30.4
D1
E
1.59
1.65
11.4
4.8
1.61
1.85
11.6
5.0
F
K0
P0
P1
P2
R
3.9
4.1
11.9
1.9
12.1
2.1
Base qty
Bulk qty
1000
1000
50
T
0.25
23.7
0.35
24.3
W
18/21
DocID15732 Rev 4
STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3
Packaging mechanical data
Figure 28. Tape
10 pitches cumulative
tolerance on tape +/- 0.2 mm
P0
D
Top cover
tape
P2
T
E
F
W
K0
B1
B0
For machine ref. only
including draft and
A0
D1
P1
radii concentric around B0
User direction of feed
R
Bending radius
User direction of feed
AM08852v1
Figure 29. Reel
T
REEL DIMENSIONS
40mm min.
Access hole
At slot location
B
D
C
N
A
G measured at hub
Full radius
Tape slot
in core for
tape start 25 mm min.
width
AM08851v2
DocID15732 Rev 4
19/21
21
Revision history
STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3
6
Revision history
Table 14. Document revision history
Changes
Date
Revision
30-Jun-2009
1
First release
14-Nov-2011
14-Nov-2012
2
3
Minor text changes.
– Added: I
2
PAKFP and TO-220
– Deleted: T
I
row
– Modified:
Figure 2
– Added: D
2
PAK package
05-Aug-2013
4
– Minor text changes
20/21
DocID15732 Rev 4
STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
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