STMicroelectronics-STFI13NK60Z
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STFI13NK60Z
N-channel 600
V
,
0
.48
Ω
, 13 A, Zener-protected SuperMESH™
Power MOSFET in I²
P
A
KFP package
Datasheet — production data
Features
R
DS(on)
max
Order code
V
DSS
I
D
P
TOT
STFI13NK60Z 600
V <0.55
Ω
13 A
35 W
■
Fully insulated and low profile package with
increased creepage path from pin to heatsink
plate
1
■
Gate charge minimized
2
3
■
Very low intrinsic capacitance
2
P
A
KFP
I
(TO-281)
Applications
■
Switching applications
Figure 1.
Internal schematic diagram
D(2)
Description
This device is an N-channel Zener-protected
Power MOSFET developed using
STMicroelectronics’ SuperMESH™ technolog
y
,
achieved through optimization of ST’s well
established strip-based PowerMESH™ layout. In
addition to a significant reduction in on-
resistance, this device is designed to ensure a
high level of dv/dt capability for the most
demanding applications.
G(1)
S(3)
AM01476v1
Table 1.
Device summary
Order code
Marking
Package
Packaging
I²
P
A
KFP
(TO-281)
STFI13NK60Z
13NK60Z
T
u
be
March 2012
Doc ID 018969 Rev 3
1/13
This is information on a product in full production.
13
Contents
STFI13NK60Z
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13
Doc ID 018969 Rev 3
STFI13NK60Z
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
V
V
DS
V
GS
I
D
Drain-source voltage
600
30
Gate-source voltage
V
13
(1)
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
A
8.2
(1)
I
D
A
(2)
52
(1)
35
Drain current (pulsed)
A
I
DM
P
TOT
ESD
T
o
tal dissipation at T
C
= 25 °C
W
kV
Gate-source human body model (R=1,5 k
Ω
, C=100 pF)
Peak diode recovery voltage slope
4
dv/dt
(3)
4.5
V/ns
Insulation withstand voltage (RMS) from all three leads
to external heat sink (t=1 s;T
C
=25 °C)
V
ISO
2500
V
T
j
Operating junction temperature
Storage temperature
-55 to 150
°C
T
stg
1. Limited
by maximum junction temperature.
2. Pulse
width limited by safe operating area.
3.
I
< 13 A, di/dt < 200 A/µs, V
= 80% V
.
SD
DD
(BR)DSS
T
a
ble 3.
Symbol
R
thj-case
R
thj-amb
Thermal data
Parameter
Value
3.6
Unit
°C/W
°C/W
Thermal resistance junction-case Max
Thermal resistance junction-amb Max
62.5
T
a
ble 4.
Avalanche characteristics
Parameter
Symbol
Max value
Unit
10
(1)
I
AR
Repetitive or non repetitive avalanche current
A
Single pulse avalanche energy
E
AS
400
mJ
(starting T
j
=25 °C, I
D
=I
AR
, V
DD
= 50 V)
1. Limited
by maximum junction temperature
Doc ID 018969 Rev 3
3/13
Electrical characteristics
STFI13NK60Z
2
Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified).
T
a
ble 5.
Symbol
On/off states
Parameter
Test conditions
I
D
= 1 mA
DS
= 600
V
,
Min. Typ. Max. Unit
Drain-source breakdown
voltage (V
GS
= 0)
V
(BR)DSS
600
V
V
1
µA
µA
Zero gate voltage drain
current (V
GS
= 0)
I
DSS
V
DS
= 600
V
,
T
c=125 °C
50
Gate body leakage
current (V
DS
= 0)
I
GSS
V
GS
= 20
V
10
4.5
µA
V
V
GS(th)
R
DS(on)
V
DS
= V
GS
, I
D
= 100 µA
Gate threshold voltage
3
3.75
0.48
Static drain-source on
resistance
V
GS
= 10
V
,
I
D
= 4.5 A
0.55
Ω
T
a
ble 6.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
Forward
transconductance
(1)
V
DS
=8
V
,
I
D
= 5 A
–
11
S
g
fs
Input capacitance
Output capacitance
C
iss
C
oss
C
rss
2030
210
48
pF
pF
pF
V
DS
=25
V
,
f
=1 MHz, V
GS
=0
V
GS
=0, V
DS
=0 to 480 V
–
Reverse transfer
capacitance
Equivalent output
capacitance
(2)
–
–
125
pF
C
oss eq.
Q
g
Q
gs
Q
gd
V
DD
=480
V
,
I
D
= 10 A
T
o
tal gate charge
Gate-source charge
Gate-drain charge
66
11
33
92
nC
nC
nC
V
GS
=10 V
1. Pulsed:
pulse duration = 300 µs, duty cycle 1.5%
2. is
defined as a constant equivalent capacitance giving the same charging time as C
C
when V
DS
oss eq.
oss
increases from 0 to 80% V
DSS
4/13
Doc ID 018969 Rev 3
STFI13NK60Z
Electrical characteristics
T
a
ble 7.
Switching times
Parameter
Symbol
Test conditions
Min.
Typ.
Max.
Unit
V
DD
= 300
V
,
I
D
= 5 A,
R
G
=4.7
Ω
,
V
GS
=10 V
t
d(on)
t
r
T
u
rn-on delay time
Rise time
22
14
ns
ns
–
–
V
DD
=300
V
,
I
D
= 5 A,
t
d(off)
t
f
T
u
rn-off delay time
Fall time
61
12
ns
ns
–
–
–
–
R
G
=4.7
Ω
,
V
GS
=10 V
t
r(Voff)
Off-voltage rise time
Fall time
V
DD
=480
V
,
I
D
= 10 A,
R
G
=4.7
Ω
,
V
GS
=10 V
10
9
ns
ns
ns
t
f
t
c
Cross-over time
20
Table 8.
Symbol
Gate-source Zener diode
Parameter
Test conditions
Igs= 1
mA
Min.
Typ.
Max. Unit
Gate-source breakdown
voltage (I
D
=0)
V
(BR)GSO
30
–
–
V
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capabilit
y
, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrit
y
.
T
hese integrated Zener diodes thus avoid the usage of external components.
T
a
ble 9.
Symbol
Source drain diode
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Source-drain current
I
SD
10
40
A
A
–
–
Source-drain current
(pulsed)
(1)
I
SDM
(2)
I
SD
= 10 A, V
GS
=0
Forward on voltage
1.6
V
V
SD
t
rr
I
SD
= 10 A,
Reverse recovery time
Reverse recovery charge
Reverse recovery current
570
4.5
16
ns
µC
A
Q
rr
–
di/dt = 100 A/µs,
V
DD
=35
V
,
T
j
=150 °C
I
RRM
1. Pulse
width limited by safe operating area
2. Pulsed:
pulse duration = 300 µs, duty cycle 1.5%
Doc ID 018969 Rev 3
5/13
Electrical characteristics
STFI13NK60Z
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Output characteristics
Transconductance
Figure 3.
Figure 5.
Figure 7.
Thermal impedance
Figure 4.
Transfer characteristics
Figure 6.
Static drain-source on resistance
6/13
Doc ID 018969 Rev 3
STFI13NK60Z
Electrical characteristics
Figure 8.
Gate charge vs gate-source voltage
Figure 9.
Capacitance variations
Figure 10.
Normalized gate threshold voltage
Figure 11.
Normalized on resistance vs
vs temperature
temperature
Figure 12.
Source-drain diode forward
characteristics
Figure 13.
Normalized B
VDSS
vs temperature
Doc ID 018969 Rev 3
7/13
Electrical characteristics
STFI13NK60Z
Figure 14.
Maximum avalanche energy vs
temperature
8/13
Doc ID 018969 Rev 3
STFI13NK60Z
Test circuits
3
Test circuits
Figure 15.
Switching times test circuit for
resistive load
Figure 16.
Gate charge test circuit
V
DD
12V
47k
Ω
1k
Ω
100nF
2200
3
.
3
μ
F
R
L
μ
F
I
G
=CON
S
T
V
DD
100
Ω
V
i
=20V=V
GMAX
D.U.
T
.
V
G
V
D
R
G
V
G
S
2200
μ
F
D.U.
T
.
2.7k
Ω
47k
Ω
P
W
1k
Ω
P
W
AM0146
8
v1
AM01469v1
Figure 17.
Test circuit for inductive load
switching and diode recovery times
Figure 18.
Unclamped inductive load test
circuit
L
A
A
A
B
D
FA
S
T
DIODE
L=100
μ
H
V
D
G
2200
μ
F
D.U.
T
.
B
3
.
3
μ
F
V
DD
S
3
.
3
μ
F
1000
μ
F
B
V
DD
25
Ω
I
D
D
G
R
G
S
V
i
D.U.
T
.
P
w
AM01470v1
AM01471v1
Figure 19.
Unclamped inductive waveform
Figure 20.
Switching time waveform
t
on
td
on
t
off
td
off
V
(BR)D
SS
t
r
t
f
V
D
90
%
10
%
90
%
I
DM
10
%
V
D
S
I
D
0
0
V
DD
V
DD
90
%
V
G
S
10
%
AM01472v1
AM0147
3
v1
Doc ID 018969 Rev 3
9/13
Package mechanical data
STFI13NK60Z
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECO
P
A
CK
®
packages, depending on their level of environmental compliance. ECO
P
ACK
®
ECO
P
A
CK is an ST trademark.
10/13
Doc ID 018969 Rev 3
STFI13NK60Z
Package mechanical data
T
a
ble 10.
I
2
P
A
KFP (TO-281) mechanical data
mm
Dim.
Min.
Typ.
Max.
A
B
4.40
2.50
2.50
0.65
0.45
0.75
4.60
2.70
2.75
0.85
0.70
1.00
1.20
5.20
10.40
23.00
14.10
10.85
3.20
1.25
7.50
D
D1
E
F
F1
G
4.95
10.00
21.00
13.20
10.55
2.70
–
H
L1
L2
L3
L4
L5
L6
0.85
7.30
Figure 21.
I
2
P
A
KFP (TO-281) drawing
ꢀꢁꢂꢃꢄꢅꢆ REVꢇ!
Doc ID 018969 Rev 3
11/13
Revision history
STFI13NK60Z
5
Revision history
T
a
ble 11.
Document revision history
Date
Revision
Changes
06-Jul-2011
1
First release.
have been added.
07-Nov-2011
20-Mar-2012
2
3
Document status promoted from preliminary data to production data.
The package name has been updated.
12/13
Doc ID 018969 Rev 3
STFI13NK60Z
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Doc ID 018969 Rev 3
13/13
