STMicroelectronics-STFI20NM65N
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STFI20NM65N
N-channel 650
V
, 15 A, 0.250
Ω
typ., MDmesh™ II
Power MOSFET in a I²PAKFP package
Datasheet production
data
–
Features
Order code
V
DSS
@T
jmax
R
DS(on)
max.
STFI20NM65N 710
V 0.270
Ω
I
D
15 A
•
100% avalanche tested
•
Low input capacitance and gate charge
•
Low gate input resistance
1
2
3
Applications
I
2
PAKFP (TO-281)
•
Switching applications
Description
Figure 1.
Internal schematic diagram
This device is an N-channel Power MOSFET
developed using the second generation of
‘ꢅꢆꢇ
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
*ꢅꢁꢇ
6ꢅꢈꢇ
$0ꢀꢁꢂꢃꢄYꢁ
Table 1. Device summary
Order code
Marking
20NM65N
Packages
Packaging
STFI20NM65N
I
2
PAKFP (TO-281)
Tube
December 2013
DocID025737 Rev 1
1/12
This is information on a product in full production.
Contents
STFI20NM65N
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
2/12
DocID025737 Rev 1
STFI20NM65N
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Parameter
Symbol
Value
Unit
V
DS
V
GS
I
D
Drain source voltage
650
± 25
15
(1)
9.45
60
V
V
Gate source voltage
Drain current continuous T
C
=25 °C
Drain current continuous T
C
=100 °C
Drain current pulsed
A
I
D
A
(2)
I
DM
A
P
TOT
T
o
tal dissipation at T
C
=25 °C
Peak diode recovery voltage slope
30
W
V/ns
dv/dt
(3)
15
Insulation withstand voltage (RMS) from all three leads
to external heatsink
V
ISO
2500
V
(t=1 s; T
C
= 25 °C)
T
stg
T
J
Storage temperature
-55 to 150
150
°C
Max. operating junction temperature
1. Limited
only by maximum temperature allowed.
2. Pulse
width limited by safe operating area.
3.
I
≤
15 A, di/dt
≤
400 A/
μ
s, V
≤
V
, V
= 80% V
.
(BR)DSS
SD
DS peak
(BR)DSS DD
Table 3. Thermal data
Parameters
Symbol
Value
Unit
R
thjc
R
thja
Thermal resistance junction-case max.
Thermal resistance junction-ambient max.
4.17
62.5
°C/W
°C/W
Table 4. Avalanche characteristics
Parameters
Symbol
Value
Unit
Avalanche current, repetitive or not-repetitive (pulse
I
AS
4
A
width limited by T
j max
)
Single pulse avalanche energy (starting T
J
= 25 °C,
I
D
= I
AR
, V
DD
= 50 V)
E
AS
115
mJ
DocID025737 Rev 1
3/12
12
Electrical characteristics
STFI20NM65N
2
Electrical characteristics
(T
C
= 25 °C unless otherwise specified).
Table 5. On/off states
Test conditions
Symbol
Parameter
Min.
Typ. Max. Unit
Drain-source breakdown
voltage
V
(BR)DSS
I
D
= 1 mA, V
GS
= 0
650
V
V
DS
= 650 V
DS
= 650 V, T
C
=0
1
μ
A
μ
A
Zero gate voltage drain
current (V
GS
=0)
l
DSS
V
100
Gate body leakage
(V
DS
=0)
l
GSS
V
GS
= ±25 V, V
DS
=0
100
4
nA
V
I
D
= 250
μ
A,
V
GS(th)
Gate threshold voltage
2
3
V
GS =
V
DS
Static drain-source
R
DS(on)
I
D
=7.5 A, V
GS
=10 V
0.250 0.270
Ω
on- resistance
Table 6. Dynamic
Test conditions
Symbol
Parameter
Min.
Typ. Max. Unit
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse capacitance
–
–
–
1280
110
10
–
–
–
pF
pF
pF
V
DS
= 50
V
, f = 1MHz, V
GS
= 0
Equivalent output
capacitance
(1)
C
oss eq
V
DS
= 0 to V
GS
= 0
–
260
–
pF
R
G
Q
g
Intrinsic gate resistance
f = 1MHz, I
D
=0
T
o
tal gate charge
–
–
–
–
4.8
44
8
–
Ω
–
nC
nC
nC
V
DD
= 520
V
,
I
D
= 15 A,
Q
gs
Q
gd
Gate source charge
Gate-drain charge
–
–
V
GS
= 10 V
22
1.
C
: defined as a constant equivalent capacitance giving the same charging time as C
when V
DS
oss eq
oss
increases from 0 to 80 % V
.
DSS
Table 7. Switching times
Test conditions
Symbol
Parameter
Min. Typ.
Max.
Unit
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
–
–
–
–
15
13.5
75
–
–
–
–
ns
ns
ns
ns
V
DD
= 325
V
,
I
D
=7.5 A
R
g
=4.7
Ω,
V
GS
=10 V
Turn-off-delay time
Fall time
21
4/12
DocID025737 Rev 1
STFI20NM65N
Electrical characteristics
Table 8. Source drain diode
Test conditions
Symbol
Parameter
Min. Typ.
Max.
Unit
I
SD
Source drain current
–
–
15
60
A
Source drain current
(pulsed)
(1)
I
SDM
A
(2)
V
SD
t
rr
Forward on voltage
I
SD
= 15 A, V
GS
= 0
–
–
–
–
–
–
–
1.6
V
ns
μ
C
A
Reverse recovery time
455
5.5
24.5
710
8
I
SD
= 15 A, di/dt = 100 A/
μ
s
Q
rr
I
RRM
t
rr
Reverse recovery charge
Reverse recovery current
Reverse recovery time
ns
μ
C
A
I
SD
=15 A, di/dt = 100 A/
μ
s
Q
rr
Reverse recovery charge
V
DD
= 60
V
,
T
j = 150 °C
I
RRM
Reverse recovery current
24
1. Pulse
width limited by safe operating area.
2. Pulsed:
pulse duration = 300
μ
s, duty cycle 1.5 %.
DocID025737 Rev 1
5/12
12
Electrical characteristics
STFI20NM65N
2.1
Electrical characteristics (curves)
Figure 2. Safe operating area
Figure 3. Thermal impedance
AM09139v1
I
D
(A)
Tj=150°C
Tc=25°C
Single pulse
10µs
100µs
1ms
10
10ms
1
0.1
10
V
DS
(V)
0.1
1
100
Figure 4. Output characteristics
Figure 5. Transfer characteristics
AM09140v1
AM09141v1
I
D
I
D
(A)
35
(A)
V
DS
=19V
V
GS
=10V
35
30
25
20
30
6V
25
20
15
10
15
10
5V
5
0
5
0
4V
V
5
2
20
DS
(V)
8
10
V
GS
(V)
0
10
15
0
4
6
Figure 6. Normalized V
(BR)DSS
vs temperature
Figure 7. Static drain-source on-resistance
AM09028v1
AM09143v1
V
(BR)DSS
(norm)
R
DS(on)
(
Ω
)
I
D
=1mA
V
GS
=10V
1.10
0.260
1.08
1.06
0.255
0.250
0.245
1.04
1.02
1.00
0.98
0.96
0.240
0.235
0.94
0.92
10 12 14
4
6
8
2
-50
-25
0
25 50
75
T
J
(°C)
0
I
D
(A)
100
6/12
DocID025737 Rev 1
STFI20NM65N
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage
Figure 9. Capacitance variations
AM09144v1
AM09145v1
V
(V)
GS
C
(pF)
V
DS
(V)
V
DS
V
DD
=520V
=15A
12
I
D
500
Ciss
1000
100
10
8
400
300
200
6
Coss
Crss
4
2
0
10
1
100
0
20
40
0.1
100
50
Q
g
(nC)
V
DS
(V)
0
10
30
1
10
Figure 10. Normalized gate threshold voltage vs
temperature
Figure 11. Normalized on-resistance vs
temperature
AM09146v1
AM09147v1
V
GS(th)
(norm)
R
DS(on)
(norm)
I
D
=250µA
2.1
1.9
1.7
1.10
I
V
D
=7.5A
GS
=10V
1.00
1.5
1.3
0.90
1.1
0.9
0.80
0.70
0.7
0.5
-50
-25
-50
-25
0
25 50 75
T
J
(°C)
0
25 50 75
T
J
(°C)
100
100
Figure 12. Source-drain diode forward
characteristics
AM09148v1
V
SD
(V)
1.6
T
J
=-50°C
1.4
1.2
1.0
0.8
0.6
T
J
=25°C
T
J
=150°C
0.4
0.2
0
14
16 I
SD
(A)
2
4
6
8
10 12
DocID025737 Rev 1
7/12
12
Test circuits
STFI20NM65N
3
Test circuits
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
V
DD
12V
47k
Ω
1k
Ω
100nF
2200
μ
F
3.3
μ
F
R
L
I
G
=CONST
V
DD
100
Ω
V
i
=20V=V
GMAX
D.U.T.
V
D
R
G
V
GS
2200
μ
F
D.U.T.
V
G
2.7k
Ω
47k
Ω
P
W
1k
Ω
P
W
AM01468v1
AM01469v1
Figure 15. Test circuit for inductive load
switching and diode recovery times
Figure 16. Unclamped inductive load test circuit
L
A
A
A
B
D
S
FAST
DIODE
L=100
μ
H
V
D
G
2200
μ
F
D.U.T.
B
3.3
μ
F
V
DD
3.3
μ
F
1000
μ
F
B
V
DD
25
Ω
I
D
D
G
R
G
S
V
i
D.U.T.
P
w
AM01470v1
AM01471v1
Figure 17. Unclamped inductive waveform
Figure 18. Switching time waveform
t
on
t
off
td
off
V
(BR)DSS
t
r
t
f
td
on
V
D
90%
10%
90%
I
DM
10%
V
GS
V
DS
I
D
0
0
V
DD
V
DD
90%
10%
AM01472v1
AM01473v1
8/12
DocID025737 Rev 1
STFI20NM65N
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
ECOPACK
®
is an ST trademark.
DocID025737 Rev 1
9/12
12
Package mechanical data
STFI20NM65N
Figure 19. I
2
PAKFP (TO-281) drawing
ꢉꢆꢊꢁꢄꢀꢋĆUHYꢌ$
Table 9. I
2
PAKFP (TO-281) mechanical data
mm
Dim.
Min.
Typ.
Max.
A
B
4.40
2.50
2.50
0.65
0.45
0.75
4.60
2.70
2.75
0.85
0.70
1.00
1.20
5.20
10.40
23.00
14.10
10.85
3.20
1.25
7.50
D
D1
E
F
F1
G
4.95
10.00
21.00
13.20
10.55
2.70
–
H
L1
L2
L3
L4
L5
L6
0.85
7.30
10/12
DocID025737 Rev 1
STFI20NM65N
Revision history
5
Revision history
Table 10. Revision history
Changes
Date
Revision
20-Dec-2013
1
Initial release.
DocID025737 Rev 1
11/12
12
STFI20NM65N
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