STMicroelectronics-STFI34N65M5
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STF34N65M5,
STFI34N65M5
N-channel 650 V, 0.09
Ω
typ., 28 A MDmesh™ V Power MOSFE
T
s
in TO-220F
P
,
I
2
PAKF
P
,
I
2
PAK packages
Datasheet
–
production data
Features
Order codes
V
DS
@ T
Jmax
R
DS(on)
max
I
D
STF34N65M5
710 V
0.11
Ω
28 A
STFI34N65M5
•
Worldwide best R
DS(on)
* area
3
•
Higher V
DSS
rating and high dv/dt capability
•
Excellent switching performance
•
100% avalanche tested
2
1
I
2
PAKFP(TO-281)
TO-220FP
Applications
Figure 1.
Internal schematic diagram
•
Switching applications
Description
‘ꢅꢆꢇ
These devices are N-channel MDmesh™ V
Power MOSFE
T
s
b
ased on an innovative
proprietary vertical process technology, which
is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
*ꢅꢁꢇ
resistance, which is unmatched among silicon-
based Power MOSFE
T
s
, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
6ꢅꢈꢇ
$0ꢀꢁꢂꢃꢄYꢁ
Table 1. Device summary
Order codes
Marking
Packages
Packaging
STF34N65M5
STFI34N65M5
TO-220FP
34N65M5
Tube
I
2
PAKFP (TO-281)
January 2014
DocID025778 Rev 1
1/15
This is information on a product in full production.
Contents
STF34N65M5, STFI34N65M5
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2/15
DocID025778 Rev 1
STF34N65M5, STFI34N65M5
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Parameter Value
Gate-source voltage
Symbol
Unit
V
GS
I
D
± 25
28
(1)
17.7
(1)
112
(1)
35
V
A
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
I
D
A
(1)
I
DM
A
P
TOT
T
o
tal dissipation at T
C
= 25 °C
W
dv/dt
(2)
Peak diode recovery voltage slope
dv/dt
(3)
MOSFET dv/dt ruggedness
15
V/ns
V/ns
50
Insulation withstand voltage (RMS) from all
three leads to external heat sink
V
ISO
2500
V
(t = 1 s; T
= 25 °C)
C
T
stg
T
j
Storage temperature
– 55 to 150
150
°C
°C
Max. operating junction temperature
1. Limited
by maximum junction temperature.
2.
3.
I
≤
28 A, di/dt
≤
400 A/
μ
s; V
≤
480 V
< V
, V
=400 V.
SD
DS peak
(BR)DSS DD
V
DS
Table 3. Thermal data
Parameter
Symbol
Value
Unit
R
thj-case
Thermal resistance junction-case max
R
thj-amb
Thermal resistance junction-ambient max
3.57
62.5
°C/W
°C/W
Table 4. Avalanche characteristics
Symbol
Parameter
Value
Unit
Avalanche current, repetitive or not repetitive
I
AR
7
A
(pulse width limited by T
jmax
)
Single pulse avalanche energy (starting t
j
=25°C,
I
d
= I
AR
; V
dd
=50)
E
AS
510
mJ
DocID025778 Rev 1
3/15
15
Electrical characteristics
STF34N65M5, STFI34N65M5
2
Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Table 5. On /off states
Test conditions
Symbol
Parameter
Drain-source
Min.
Typ.
Max. Unit
V
(BR)DSS
I
D
= 1 mA, V
GS
= 0
V
DS
= 650 V
650
V
breakdown voltage
Zero gate voltage
1
100
μ
A
μ
A
I
DSS
drain current (V
GS
= 0)
V
DS
= 650
V
,
T
C
=125 °C
Gate-body leakage
V
GS
= ± 25 V
I
GSS
± 100
nA
current (V
DS
= 0)
V
GS(th)
R
DS(on)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250
μ
A
3
4
5
V
Static drain-source
V
GS
= 10
V
,
I
D
= 14 A
0.09
0.11
Ω
on-resistance
Table 6. Dynamic
Test conditions
Symbol
Parameter
Min.
Typ.
2700
75
Max. Unit
C
iss
Input capacitance
–
–
–
–
pF
pF
V
V
DS
= 100 V, f = 1 MHz,
GS
= 0
C
oss
Output capacitance
C
rss
Reverse transfer
capacitance
–
–
6.3
–
–
pF
pF
Equivalent
capacitance time
related
(1)
C
o(tr)
220
V
DS
= 0 to 520 V, V
GS
= 0
Equivalent
capacitance energy
related
(2)
C
o(er)
–
–
63
–
–
pF
Intrinsic gate
resistance
R
G
f = 1 MHz open drain
1.95
Ω
Q
g
Q
gs
Q
gd
T
o
tal gate charge
Gate-source charge
Gate-drain charge
–
–
–
62.5
17
–
–
–
nC
nC
nC
V
DD
= 520
V
,
I
D
= 14 A,
V
GS
= 10 V
28
1. Time
related is defined as a constant equivalent capacitance giving the same charging time as C
when
oss
V
increases from 0 to 80% V
DSS
DS
2. Energy
related is defined as a constant equivalent capacitance giving the same stored energy as C
oss
when V
increases from 0 to 80% V
DS
DSS
4/15
DocID025778 Rev 1
STF34N65M5, STFI34N65M5
Electrical characteristics
Min. Typ. Max.
Unit
Table 7. Switching times
Test conditions
Symbol
Parameter
t
d
(v)
t
r
(v)
t
f
(i)
Voltage delay time
Voltage rise time
Current fall time
Crossing time
–
–
–
–
59
8.7
7.5
12
–
–
–
–
ns
ns
ns
ns
V
DD
= 400 V, I
D
= 18 A,
R
G
= 4.7
Ω,
V
GS
= 10 V
t
c
(off)
Table 8. Source drain diode
Test conditions
Symbol
Parameter
Min. Typ. Max.
Unit
I
SD
Source-drain current
–
–
–
–
–
–
–
–
–
28
112
1.5
A
A
(1)
I
SDM
Source-drain current (pulsed)
Forward on voltage
(2)
V
SD
I
SD
= 28 A, V
GS
= 0
V
t
rr
Q
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
350
5.6
32
ns
μ
C
A
I
SD
= 28 A, di/dt = 100 A/
μ
s
I
RRM
t
rr
422
7.4
35
ns
μ
C
A
I
SD
= 28 A, di/dt = 100 A/
μ
s
Q
rr
V
DD
= 100
V
,
T
j
= 150 °C
I
RRM
1. Pulse
width limited by safe operating area.
2. Pulsed:
pulse duration = 300
μ
s, duty cycle 1.5%
DocID025778 Rev 1
5/15
15
Electrical characteristics
STF34N65M5, STFI34N65M5
2.1
Electrical characteristics (curves)
Figure 2. Safe operating area
Figure 3. Thermal impedance
AM15317v1
I
D
(A)
100
10
1
10µs
100µs
1ms
Tj=150°C
Tc=25°C
10ms
0.1
Single
pulse
0.01
10
V
DS
(V)
0.1
1
100
Figure 4. Output characteristics
Figure 5. Transfer characteristics
AM15319v1
AM15320v1
I
D
(A)
I
D
(A)
V
V
= 9 V
= 8 V
GS
80
70
60
80
V
= 25 V
DS
GS
70
60
50
40
50
40
30
20
V
= 7 V
GS
30
20
10
0
10
0
V
= 6 V
GS
5
20
25 V
DS
(V)
7
8
9 V
GS
(V)
0
10
15
3
5
6
4
Figure 6. Gate charge vs gate-source voltage
Figure 7. Static drain-source on-resistance
AM15321v1
AM15322v1
R
DS(on)
(
Ω
)
V
(V)
GS
V
DS
0.096
0.096
0.094
0.092
V
DD
=520 V
=14 A
(V)
500
12
V
GS
=10V
I
D
V
DS
10
8
400
300
200
100
0.09
0.088
0.086
6
4
2
0
0.084
0.082
0.08
0
30
50
60
0
20
40
70 80
Q
g
(nC)
I
25
D
(A)
0
10
15
5
20
6/15
DocID025778 Rev 1
STF34N65M5, STFI34N65M5
Electrical characteristics
Figure 8. Capacitance variations
Figure 9. Output capacitance stored energy
AM15323v1
AM15324v1
C
E
oss
(pF)
(µJ)
12
1000
1000
10
8
Ciss
6
100
10
1
Coss
Crss
4
2
0
0.1
100
200
400 500
600
1
10
V
DS
(V)
0
100
300
V
DS
(V)
Figure 10. Normalized gate threshold voltage vs
temperature
Figure 11. Normalized on-resistance vs
temperature
AM05459v1
AM05460v1
V
GS(th)
R
DS(on)
(norm)
V
DS
= V
GS
(norm)
V
GS
= 10 V
I
D
= 250 µA
1.10
2.1
I
D
= 14 A
1.9
1.7
1.5
1.3
1.1
1.00
0.90
0.80
0.70
0.9
0.7
0.5
-50
-25
-50
-25
0
25 50 75
T
J
(°C)
0
25 50 75
T
J
(°C)
100
100
Figure 12. Source-drain diode forward
characteristics
Figure 13. Normalized V
DS
vs temperature
AM05461v1
AM10399v1
V
(V)
SD
V
DS
(norm)
T
J
=-50°C
1.08
1.2
I
D
= 1mA
1.06
1.04
1.02
1.00
1.0
0.8
0.6
T
J
=25°C
T
J
=150°C
0.98
0.96
0.4
0.2
0.94
0.92
0
0
-50
-25
10
20
30
40
50 I
SD
(A)
0
25 50 75
T
J
(°C)
100
DocID025778 Rev 1
7/15
15
Electrical characteristics
STF34N65M5, STFI34N65M5
Figure 14. Switching losses vs gate
resistance
(1)
AM15325v1
E
(
μ
J)
500
400
300
200
100
0
Eon
V
DD
=400 V
V
GS
=10 V
I
D
=18 A
Eoff
20
30
40
10
R
G
(
Ω
)
0
1. Eon
including reverse recovery of a SiC diode
8/15
DocID025778 Rev 1
STF34N65M5, STFI34N65M5
Test circuits
3
Test circuits
Figure 15. Switching times test circuit for
resistive load
Figure 16. Gate charge test circuit
V
DD
12V
47k
Ω
1k
Ω
100nF
2200
μ
F
3.3
μ
F
R
L
I
G
=CONST
V
DD
100
Ω
V
i
=20V=V
GMAX
D.U.T.
V
D
R
G
V
GS
2200
μ
F
D.U.T.
V
G
2.7k
Ω
47k
Ω
P
W
1k
Ω
P
W
AM01468v1
AM01469v1
Figure 17. Test circuit for inductive load
switching and diode recovery times
Figure 18. Unclamped inductive load test circuit
L
A
A
A
B
D
S
FAST
DIODE
L=100
μ
H
V
D
G
2200
μ
F
D.U.T.
B
3.3
μ
F
V
DD
3.3
μ
F
1000
μ
F
B
V
DD
25
Ω
I
D
D
G
R
G
S
V
i
D.U.T.
P
w
AM01470v1
AM01471v1
Figure 19. Unclamped inductive waveform
Figure 20. Switching time waveform
– off
Inductive Load Turn
V
(BR)DSS
Id
V
D
90%Vds
90%Id
t
d
(v)
I
DM
Vgs
90%Vgs
10%Vds
on
I
D
Vgs(I(t))
V
DD
V
DD
10%Id
Vds
t
r
(v)
t
f
(i)
t
c
(off)
AM01472v1
AM05540v1
DocID025778 Rev 1
9/15
15
Package mechanical data
STF34N65M5, STFI34N65M5
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
ECOPACK
®
is an ST trademark.
10/15
DocID025778 Rev 1
STF34N65M5, STFI34N65M5
Package mechanical data
Figure 21. TO-220FP drawing
7012510_Rev_K_B
DocID025778 Rev 1
11/15
15
Package mechanical data
STF34N65M5, STFI34N65M5
Table 9. TO-220FP mechanical data
mm
Dim.
Min.
Typ.
Max.
A
B
4.4
2.5
4.6
2.7
D
2.5
2.75
0.7
E
0.45
0.75
1.15
1.15
4.95
2.4
F
1
F1
F2
G
1.70
1.70
5.2
G1
H
2.7
10
10.4
L2
L3
L4
L5
L6
L7
Dia
16
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
16.4
9.3
3
3.2
12/15
DocID025778 Rev 1
STF34N65M5, STFI34N65M5
Package mechanical data
Figure 22. I
2
PAKFP (TO-281) drawing
ꢉꢆꢊꢁꢄꢀꢋĆUHYꢌ$
Table 10. I
2
PAKFP (TO-281) mechanical data
mm
Dim.
Min.
Typ.
Max.
A
B
4.40
2.50
2.50
0.65
0.45
0.75
4.60
2.70
2.75
0.85
0.70
1.00
1.20
5.20
10.40
23.00
14.10
10.85
3.20
1.25
7.50
D
D1
E
F
F1
G
4.95
10.00
21.00
13.20
10.55
2.70
–
H
L1
L2
L3
L4
L5
L6
0.85
7.30
DocID025778 Rev 1
13/15
15
Revision history
STF34N65M5, STFI34N65M5
5
Revision history
Table 11. Document revision history
Date
Revision
Changes
First release. Part numbers previously included in datasheet
DocID022853
14-Jan-2014
1
14/15
DocID025778 Rev 1
STF34N65M5, STFI34N65M5
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