STMicroelectronics-STFU10NK60Z
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STFU10NK60Z
N-
channel 600 V, 0.68 Ω typ., 10 A, SuperMESH™
Power MOSFET in a TO-220FP ultra narrow leads package
Datasheet – production data
Features
P
tot
Order code
V
DS
R
DS(on)
max.
I
D
35 W
STFU10NK60Z 600
V
0.75 Ω
10 A
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Zener-protected
3
2
1
TO-220FP
ultra narrow leads
Applications
Switching applications
Figure 1: Internal schematic diagram
Description
This high voltage device is a Zener-protected
N-channel Power MOSFET developed using the
SuperMESH™ technology by
STMicroelectronics, an optimization of the
well-
established PowerMESH™. In addition to a
significant reduction in on-resistance, this device
is designed to ensure a high level of dv/dt
capability for the most demanding applications.
Table 1: Device summary
Package
TO-220FP ultra narrow leads
Order code
Marking
Packaging
STFU10NK60Z
10NK60Z
Tube
December 2016
DocID028779 Rev 3
1/13
This is information on a product in full production.
Contents
STFU10NK60Z
Contents
2/13
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STFU10NK60Z
Electrical ratings
1
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
V
DS
Parameter
Value
600
±30
10
Unit
V
Drain-source voltage
Gate-source voltage
V
GS
V
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
A
5.7
36
A
A
P
TOT
ESD
Total dissipation at T
C
= 25 °C
35
W
Gate-
source, human body model (R = 1.5 kΩ, C = 100 pF)
Peak diode recovery voltage slope
4
kV
V/ns
4.5
Insulation withstand voltage (RMS) from all three leads to external
heat sink (t = 1s; T
C
= 25 °C)
V
ISO
2500
V
T
j
Operation junction temperature range
Storage temperature range
-55 to 150
°C
T
stg
Notes:
(1)
Limited by package
(2)
Pulse width limited by safe operating area
(3)
I
< 10 A , di/dt < 200 A/μs , V
DD
= 80 % V
(BR)DSS
SD
Table 3: Thermal data
Parameter
Symbol
Value
3.6
Unit
°C/W
°C/W
R
thj-case
Thermal resistance junction-case max
R
thj-amb
Thermal resistance junction-ambient max
62.5
Table 4: Avalanche characteristics
Symbol
Parameter
Value
Unit
Avalanche current, repetitive or non-repetitive
(pulse width limited by T
J
max)
I
AR
10
A
Single pulse avalanche energy
(starting T
J
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
E
AS
300
mJ
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Electrical characteristics
STFU10NK60Z
2
Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Table 5: On /off states
Symbol
Parameter
Test conditions
V
GS
= 0 V, I
D
=
250 μA
V
GS
= 0 V, V
DS
= 600 V
Min. Typ. Max. Unit
Drain-source breakdown
voltage
V
(BR)DSS
600
V
1
µA
µA
Zero gate voltage drain
current
I
DSS
V
GS
= 0 V, V
DS
= 600
V,
50
I
GSS
Gate-body leakage current
Gate threshold voltage
V
DS
= 0 V, V
GS
= +20 V
V
DS
= V
GS
, I
D
= 250 µA
±10
4.5
µA
V
V
GS(th)
3
3.75
0.68
Static drain-source
on- resistance
0.75
R
DS(on)
V
GS
= 10 V, I
D
= 4.5 A
Ω
Notes:
(1)
Defined by design, not subject to production test.
Table 6: Dynamic
Test conditions
Symbol
C
iss
Parameter
Input capacitance
Min. Typ. Max. Unit
–
–
–
–
–
–
1370
156
37
–
–
–
–
–
–
pF
pF
pF
pF
nC
nC
V
GS
= 0 V, V
DS
= 25 V,
f = 1 MHz
Output capacitance
C
oss
Reverse transfer capacitance
C
rss
Equivalent output capacitance
V
GS
= 0 V, V
DS
= 0 to 480 V
93
Q
g
Total gate charge
V
DD
= 480 V, I
D
= 8 A,
V
GS
= 10 V
48
Q
gs
Gate-source charge
8
Q
gd
Gate-drain charge
–
25
–
nC
Notes:
(1)
C
oss eq
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80%
Table 7: Switching times
Test conditions
Symbol
t
d(on)
t
r
Parameter
Min. Typ. Max. Unit
Turn-on delay time
Rise time
V
DD
= 300 V, I
D
= 4 A,
–
–
–
20
20
55
–
–
–
ns
ns
ns
R
G
= 4.7
Ω, V
GS
= 10 V
t
d(off)
Turn-off delay time
t
f
Fall time
–
30
–
ns
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STFU10NK60Z
Symbol
Electrical characteristics
Min. Typ. Max. Unit
Table 8: Source drain diode
Test conditions
Parameter
Source-drain current
–
–
10
36
V
A
Source-drain current
(pulsed)
t
rr
Forward on voltage
I
SD
= 10 A, V
GS
= 0 V
–
–
–
1.6
V
Reverse recovery time
Reverse recovery charge
I
SD
= 8 A, di/dt = 100 A/µs,
570
4.1
ns
µC
V
DD
= 40 V , T
J
= 150 °C
Q
rr
I
RRM
Reverse recovery current
–
15
A
Notes:
(1)
Limited by package
(2)
Pulse width limited by safe operating area
(3)
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Table 9: Gate-source Zener diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
±30
Gate-source breakdown
voltage
I
GS
= ±1 mA, I
D
= 0 A
V
(BR)GSO
–
–
V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD
performance of the device. The Zener voltage facilitates efficient and cost-effective device
integrity protection, thus eliminating the need for additional external componentry.
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Electrical characteristics
STFU10NK60Z
2.1
Electrical characteristics (curves)
Figure 2: Safe operating area
Figure 3: Thermal impedance
Figure 5: Gate charge vs gate-source voltage
Figure 4: Output characteristics
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STFU10NK60Z
Figure 6: Capacitance variations
Electrical characteristics
Figure 7: Static drain-source on-resistance
Figure 8: Normalized gate threshold voltage vs
temperature
Figure 9: Normalized on-resistance vs temperature
DocID028779 Rev 3
7/13
Electrical characteristics
Figure 10: Source-drain diode forward
characteristics
STFU10NK60Z
Figure 11: Maximum avalanche energy
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STFU10NK60Z
Test circuits
3
Test circuits
Figure 12: Test circuit for resistive load
switching times
Figure 13: Test circuit for gate charge
behavior
Figure 14: Test circuit for inductive load
switching and diode recovery times
Figure 15: Unclamped inductive load test
circuit
Figure 17: Switching time waveform
Figure 16: Unclamped inductive waveform
DocID028779 Rev 3
9/13
Package information
STFU10NK60Z
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
ECOPACK
®
is an ST trademark.
4.1
TO-220FP ultra narrow leads package information
Figure 18: TO-220FP ultra narrow leads package outline
8576148_1
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DocID028779 Rev 3
STFU10NK60Z
Package information
Table 10: TO-220FP ultra narrow leads mechanical data
mm
Dim.
Min.
4.40
2.50
2.50
0.45
0.65
–
Typ.
Max.
4.60
2.70
2.75
0.60
0.75
0.90
5.20
2.70
10.40
15.90
30.50
11.00
3.10
16.40
9.30
3.60
1.30
3.20
A
B
D
E
F
F1
G
4.95
2.40
10.00
15.10
28.50
10.20
2.50
15.60
9.00
3.20
–
G1
H
2.54
L2
L3
L4
L5
L6
L7
L8
L9
Dia.
3.00
DocID028779 Rev 3
11/13
Revision history
STFU10NK60Z
5
Revision history
Table 11: Document revision history
Changes
Date
Revision
07-Jan-2016
1
Initial release.
Document status changed from preliminary to production data.
Minor text changes.
12-Sep-2016
05-Dec-2016
2
3
Updated Features on cover page.
Minor text changes
12/13
DocID028779 Rev 3
STFU10NK60Z
IMPORTANT NOTICE
–
PLEASE READ CAREFULLY
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der
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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2016 STMicroelectronics
–
All rights reserved
DocID028779 Rev 3
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