STMicroelectronics-STFW3N170
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STFW3N170
N-channel 1700 V, 7
Ω typ., 2.
6
A PowerMESH™
Power MOSFET in a TO-3PF package
Datasheet – production data
Features
Order code
V
DS
R
DS(on)
max.
I
D
P
TOT
STFW3N170 1700
V
13
Ω
2.6 A
63 W
Intrinsic capacitances and Q
g
minimized
TO-3PF for higher creepage between leads
High speed switching
3
2
100% avalanche tested
1
Applications
TO-3PF
Switching applications
Figure 1: Internal schematic diagram
Description
This Power MOSFET is designed using the
STMicroelectronics consolidated strip-layout-
based MESH OVERLAY™ process. The result is
a product that matches or improves on the
performance of comparable standard parts from
other manufacturers.
Table 1: Device summary
Order code
Marking
Package
Packing
STFW3N170
3N170
TO-3PF
Tube
September 2015
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This is information on a product in full production.
Contents
STFW3N170
Contents
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STFW3N170
Electrical ratings
1
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
1700
±30
2.6
Unit
V
V
DS
V
GS
Drain-source voltage
Gate-source voltage
V
Drain current (continuous) at T
case
= 25 °C
Drain current (continuous) at T
case
= 100 °C
Drain current (pulsed)
A
1.6
I
DM
P
TOT
I
AR
10.4
63
A
W
A
Total dissipation at T
case
= 25 °C
Avalanche current, repetitive or not repetitive
Single pulse avalanche energy
0.8
2
mJ
Insulation withstand voltage (RMS) from all three leads to
external heat sink (t = 1 s; T
C
= 25 °C)
V
ISO
3.5
kV
°C
T
stg
T
j
Storage temperature
-55 to 150
Operating junction temperature
Notes:
(1)
Limited by maximum junction temperature.
(2)
starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V.
Table 3: Thermal data
Parameter
Symbol
Value
2
Unit
R
thj-case
R
thj-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
°C/W
50
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Electrical characteristics
STFW3N170
2
Electrical characteristics
(T
case
= 25 °C unless otherwise specified)
Table 4: Static
Symbol
Parameter
Test conditions
V
GS
= 0 V, I
D
= 1 mA
V
GS
= 0 V, V
DS
= 1700 V
Min.
Typ.
Max.
Unit
Drain-source breakdown
voltage
V
(BR)DSS
1700
V
10
Zero gate voltage drain
current
I
DSS
µA
V
GS
= 0 V, V
DS
= 1700 V,
T
case
= 125 °C
500
Gate-body leakage
current
I
GSS
V
DS
= 0 V, V
GS
= ±30 V
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 1.3 A
±100
5
nA
V
V
GS(th)
R
DS(on)
Gate threshold voltage
3
4
7
Static drain-source on-
resistance
13
Ω
Table 5: Dynamic
Test conditions
Symbol
C
iss
Parameter
Input capacitance
Output capacitance
Min.
Typ.
1100
50
Max.
Unit
–
–
–
–
C
oss
V
DS
= 100 V, f = 1 MHz,
V
GS
= 0 V
pF
Reverse transfer
capacitance
C
rss
–
7
–
R
G
Q
g
Intrinsic gate resistance
Total gate charge
f = 1 MHz, I
D
= 0 A
–
–
–
–
3.6
44
7
–
–
–
–
Ω
V
DD
= 1360 V, I
D
= 2.6 A,
Q
gs
Q
gd
Gate-source charge
Gate-drain charge
nC
25
Table 6: Switching times
Test conditions
Symbol
t
d(on)
t
r
Parameter
Turn-on delay time
Rise time
Min.
Typ.
25
9
Max.
Unit
V
DD
= 850 V, I
D
= 1.3 A
R
G
= 4.7
Ω, V
GS
= 10 V
–
–
–
–
–
–
t
d(off)
Turn-off delay time
51
ns
t
f
Fall time
–
53
–
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STFW3N170
Electrical characteristics
Table 7: Source-drain diode
Test conditions
Symbol
Parameter
Min.
Typ.
Max.
Unit
I
SD
Source-drain current
–
2.6
T
j
= 25 °C
A
Source-drain current
(pulsed)
I
SDM
–
10.4
1.5
Forward on voltage
V
GS
= 0 V, I
SD
= 2.6 A
–
–
–
V
t
rr
Reverse recovery time
I
SD
= 2.6 A,
di/dt = 100 A/µs,
1.58
6
µs
µC
Q
rr
Reverse recovery charge
Reverse recovery current
I
RRM
–
7.9
A
t
rr
Reverse recovery time
I
SD
= 2.6 A,
di/dt = 100 A/µs,
–
–
2.12
8.8
µs
Q
rr
Reverse recovery charge
µC
V
DD
= 60 V, T
j
= 150 °C
I
RRM
Reverse recovery current
–
8.3
A
Notes:
(1)
Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
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Electrical characteristics
STFW3N170
2.1
Electrical characteristics (curves)
Figure 2: Safe operating area
Figure 3: Thermal impedance
Figure 5: Transfer characteristics
Figure 4: Output characteristics
Figure 7: Static drain-source on-resistance
Figure 6: Gate charge vs gate-source voltage
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Electrical characteristics
Figure 9: Normalized gate threshold voltage
vs temperature
Figure 8: Capacitance variations
Figure 10: Normalized on-resistance vs
temperature
Figure 11: Normalized V(BR)DSS vs
temperature
Figure 13: Source- drain diode forward
characteristics
Figure 12: Output capacitance stored energy
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Test circuits
STFW3N170
3
Test circuits
Figure 14: Switching times test circuit for resistive
load
Figure 15: Gate charge test circuit
Figure 16: Test circuit for inductive load switching
and diode recovery times
Figure 17: Unclamped inductive load test circuit
Figure 19: Switching time waveform
Figure 18: Unclamped inductive waveform
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STFW3N170
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
ECOPACK
®
is an ST trademark.
4.1
TO-3PF package information
Figure 20: TO-3PF package outline
7627132_D
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Package information
STFW3N170
Table 8: TO-3PF mechanical data
mm
Dim.
Min.
5.30
2.80
3.10
1.80
0.80
0.65
1.80
10.30
Typ.
Max.
5.70
3.20
3.50
2.20
1.10
0.95
2.20
11.50
A
C
D
D1
E
F
F2
G
G1
H
5.45
10
15.30
9.80
15.70
10.20
23.20
26.70
44.40
4.70
L
L2
L3
L4
L5
L6
L7
N
22.80
26.30
43.20
4.30
24.30
14.60
1.80
24.70
15
2.20
R
3.80
4.20
Dia
3.40
3.80
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STFW3N170
Revision history
5
Revision history
Table 9: Document revision history
Changes
Revisi
Date
on
17-Jan-2013
1
First release.
Text and formatting changes throughout document.
Part number STW3N170 has been moved to a separate document.
In section Electrical ratings:
– updated Table Absolute maximum ratings
In section Electrical characteristics:
– renamed Table Static (was On/off states)
– updated Table Dynamic
22-Jun-2015
2
– updated Table Switching times
– updated Table Source-drain diode
Added section Electrical characteristics (curves)
In section Package information:
– updated section name (was Package mechanical data)
– updated TO-3PF package information
In section
Electrical ratings
:
– updated table
Absolute maximum ratings
In section
Electrical characteristics
:
– updated table
Dynamic
16-Sep-2015
3
In section
Electrical characteristics (curves)
:
– updated figures
Thermal impedance
and
Output capacitance stored
energy
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STFW3N170
IMPORTANT NOTICE
–
PLEASE READ CAREFULLY
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, and
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der
acknowledgement.
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Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2015 STMicroelectronics
–
All rights reserved
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