STMicroelectronics-STGB30H60DLFB
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STGB30H60DLFB,
STGW30H60DLFB
Trench gate field-stop IGB
T
,
H
B series
600 V, 30 A high speed
Datasheet
–
production data
Features
•
Designed for soft commutation only
•
Maximum junction temperature: T
J
= 175 °C
•
High speed switching series
•
Minimized tail current
TAB
3
1
3
•
V
CE(sat)
= 1.55 V (typ.) @ I
C
= 30 A
•
Low V
F
soft recovery co-packaged diode
•
Tight parameters distribution
•
Safe paralleling
2
D
2
PAK
1
TO-247
•
Low thermal resistance
•
Lead free package
Figure 1. Internal schematic diagram
Applications
C (2, TAB)
•
Microwave oven
•
Resonant converters
Description
G (1)
These devices are IGB
T
s
d
eveloped using an
advanced proprietary trench gate and field stop
structure. The device is part of the new “HB”
series of IGB
T
s
, which represent an optimum
compromise between conduction and switching
losses to maximize the efficiency of any
frequency converter. Furthermore, a slightly
positive V
CE(sat)
temperature coefficient and very
tight parameter distribution result in safer
paralleling operation.
E (3)
Table 1. Device summary
Order code
Marking
Package
Packaging
STGB30H60DLFB
STGW30H60DLFB
GB30H60DLFB
GW30H60DLFB
D
2
PAK
TO-247
T
a
pe and reel
Tube
July 2014
DocID026409 Rev 2
1/20
This is information on a product in full production.
20
Contents
STGB30H60DLFB, STGW30H60DLFB
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics (curve) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
2
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
2/20
DocID026409 Rev 2
STGB30H60DLFB, STGW30H60DLFB
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
V
CES
I
C
Collector-emitter voltage (V
GE
= 0)
Continuous collector current at T
C
= 25 °C
Continuous collector current at T
C
= 100 °C
Pulsed collector current
600
60
V
A
I
C
30
A
(1)
I
CP
120
A
Continuous forward current T
C
= 25 °C
Continuous forward current T
C
= 25 °C
Pulsed forward current
60
A
I
F
30
A
(1)
I
FP
120
A
V
GE
P
TOT
T
STG
T
J
Gate-emitter voltage
±20
V
T
o
tal dissipation at T
C
= 25 °C
Storage temperature range
260
W
°C
°C
– 55 to 150
– 55 to 175
Operating junction temperature
1. Pulse
width limited by maximum junction temperature.
Table 3. Thermal data
Parameter
Value
Symbol
Unit
D
2
PAK TO-247
Thermal resistance junction-case IGBT
Thermal resistance junction-case diode
Thermal resistance junction-ambient
0.58
2.08
°C/W
°C/W
°C/W
R
thJC
R
thJA
62.5
50
DocID026409 Rev 2
3/20
Electrical characteristics
STGB30H60DLFB, STGW30H60DLFB
2
Electrical characteristics
T
J
= 25 °C unless otherwise specified.
Table 4. Static characteristics
Test conditions
Symbol
Parameter
Min. Typ. Max. Unit
Collector-emitter
V
(BR)CES
breakdown voltage
(V
GE
= 0)
I
C
= 2 mA
600
V
V
GE
= 15
V
,
I
C
= 30 A
1.55
1.65
2
V
GE
= 15
V
,
I
C
= 30 A
T
J
= 125 °C
Collector-emitter saturation
voltage
V
CE(sat)
V
V
GE
= 15
V
,
I
C
= 30 A
T
J
= 175 °C
1.75
I
F
= 30 A
1.4
1.2
1.05
6
1.7
V
F
Forward on-voltage
I
F
= 30 A T
J
= 125 °C
I
F
= 30 A T
J
= 175 °C
V
CE
= V
GE
, I
C
= 1 mA
V
V
GE(th)
Gate threshold voltage
5
7
V
Collector cut-off current
(V
GE
= 0)
I
CES
V
CE
= 600 V
V
GE
= ± 20 V
25
µA
Gate-emitter leakage
I
GES
250
nA
current (V
CE
= 0)
Table 5. Dynamic characteristics
Test conditions
Symbol
Parameter
Min. Typ.
Max. Unit
C
ies
Input capacitance
–
–
3659
101
–
–
pF
pF
C
oes
Output capacitance
V
CE
= 25
V
, f = 1 MHz,
V
GE
= 0
Reverse transfer
capacitance
C
res
–
76
–
pF
Q
g
Q
ge
Q
gc
T
o
tal gate charge
–
–
–
149
25
–
–
–
nC
nC
nC
V
CC
= 520
V
,
I
C
= 30 A,
Gate-emitter charge
Gate-collector charge
62
4/20
DocID026409 Rev 2
STGB30H60DLFB, STGW30H60DLFB
Electrical characteristics
Table 6. IGBT switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min. Typ. Max.
Unit
t
d(off)
t
f
Turn-off delay time
Current fall time
146
23
–
–
–
–
–
–
ns
ns
µJ
ns
ns
µJ
V
CE
= 400 V, I
C
= 30 A,
R
G
= 10
Ω
, V
GE
= 15 V,
–
–
–
–
–
(1)
E
off
Turn-off switching losses
Turn-off delay time
Current fall time
293
158
65
t
d(off)
t
f
V
CE
= 400 V, I
C
= 30 A,
R
G
= 10
Ω
, V
GE
= 15 V,
(1)
J
E
off
Turn-off switching losses
572
1. Turn-off
losses include also the tail of the collector current.
Table 7. IGBT switching characteristics (capacitive load)
Symbol
Parameter
Test conditions
Min. Typ. Max.
Unit
V
CC
= 320 V, V
GE
= 150
V
,
R
G
=20
Ω
, I
C
= 30 A,
–
–
150
300
–
–
L = 100 µH, C
snub
= 20 nF
(1)
E
off
Turn-off switching losses
µJ
V
R
CC
= 320 V, V
GE
= 150
V
,
G
=20
Ω
, I
C
= 30 A,
L = 100 µH, C
snub
= 20 n
F
,
T =
175 °C
J
1. Turn-off
losses include also the tail of the collector current.
DocID026409 Rev 2
5/20
Electrical characteristics
STGB30H60DLFB, STGW30H60DLFB
2.1
Electrical characteristics (curve)
Figure 2. Power dissipation vs. case
temperature
Figure 3. Collector current vs. case temperature
GIPG280120141346FSR
GIPG280120141353FSR
P
tot
(W)
I
C
(A)
60
250
200
150
100
50
40
20
0
V
GE
≥ 15
V
, T
J
≤ 175 °C
V
GE
≥ 15
V
, T
J
≤ 175 °C
0
0
175
25 50 75
100 125 150
0
25 50 75
100 125 150
T
C
(°C)
T
C
(°C)
Figure 4. Output characteristics (T
J
= 25°C)
Figure 5. Output characteristics (T
J
= 175°C)
GIPG280120141156FSR
GIPG280120141206FSR
I
C
(A)
I
C
(A)
V
GE
=15 V
V
GE
=15 V
13V
13V
100
100
11V
11V
9V
9V
80
60
40
80
60
40
20
0
20
0
7V
CE
(V)
1
2
3
4
V
CE
(V)
1
2
3
4
V
0
0
Figure 6. V
CE(sat)
vs. junction temperature
Figure 7. V
CE(sat)
vs. collector current
GIPG280120141440FSR
GIPG280120141446FSR
V
CE(sat)
(V)
V
CE(sat)
(V)
V
GE
= 15V
V
GE
= 15V
2.2
2.2
2.0
I
C
= 60A
2.0
T
J
= 175°C
1.8
1.6
1.4
1.8
1.6
T
J
= 25°C
I
C
= 30A
T
J
= -40°C
1.4
1.2
I
C
= 15A
1.2
0
I
C
(A)
-50
0
50
100
150
T
20
30
40
50
J
(°C)
6/20
DocID026409 Rev 2
STGB30H60DLFB, STGW30H60DLFB
Electrical characteristics
Figure 8. Collector current vs. switching
frequency
Figure 9. Forward bias safe operating area
GIPG280120141450FSR
GIPG260620141544FSR
Ic [A]
I
C
(A)
V
ce(sat)
limit
60
50
40
Tc=8
0
°
C
100
°
Tc=100
C
10 μs
10
100 μs
1 ms
30
20
1
rectangular current shape,
(duty cycle=0.5,
V
CC
= 400V, R
G
=10
Ω
,
(single pulse T
C
= 2
5
°
C,
10
0
T
J
≤ 175 °C; V
GE
=15V)
V
GE
= 0/15
V
, T
J
=175°C)
0.1
1
10
100
f [kHz]
V
CE
(V)
1
10
Figure 10. Transfer characteristics
Figure 11. Diode V
F
vs. forward current
GIPG280120141330FSR
GIPG260620141554FSR
F
(V)
I
C
(A)
V
25 °C
V
CE
=10 V
T
J
= -40°C
175 °C
100
2.0
1.6
1.2
80
60
40
T
J
= 25°C
T
J
= 175°C
0.8
0.4
20
0
9
11
13
V
GE
(V)
10
20
30
40
50
I
F
(A)
7
Figure 12. Normalized V
GE(th)
vs junction
temperature
Figure 13. Normalized V
(BR)CES
vs. junction
temperature
AM16060v1
AM16059v1
V
GE(th)
(norm)
V
(BR)CES
(norm)
I
C
= 2mA
V
CE
= V
GE
1.1
I
C
= 1mA
1.0
0.9
1.0
0.9
0.8
0.7
0.6
-50
0
50
100
150
-50
0
50
100
150
T
J
(°C)
T
J
(°C)
DocID026409 Rev 2
7/20
Electrical characteristics
STGB30H60DLFB, STGW30H60DLFB
Figure 14. Capacitance variation
Figure 15. Gate charge vs. gate-emitter voltage
GIPG280120141707FSR
GIPG280120141455FSR
C(pF)
1000
V
GE
(V)
16
V
CC
= 520
V
, I
C
= 30A
C
ies
I
G
= 1mA
14
12
10
8
6
4
2
0
100
10
C
C
o
r
e
e
s
s
0.1
1
10
V
CE
(V)
0
Q
g
(nC)
100
80
120
160
40
Figure 16. Switching loss vs collector current
Figure 17. Switching loss vs gate resistance
GIPG280120141606FSR
GIPG280120141536FSR
E (μJ)
E (μJ)
V
R
CC
= 400V, V
GE
= 15V
V
CC
= 400
V
, V
GE
= 15V
1200
1000
800
600
400
200
0
g
= 10Ω, T = 175°C
J
I
C
= 30A, T = 175 °C
J
1000
900
800
700
600
500
E
OFF
E
OFF
I
C
(A)
0
10
20
30
40
R
G
(ꢀ)
0
20
40
60
Figure 18. Switching loss vs temperature
Figure 19. Switching loss vs collector-emitter
voltage
GIPG280120141532FSR
GIPG280120141610FSR
E (μJ)
E (μJ)
V
CC
= 400V, V
GE
= 15V
T
J
= 175°C, V
GE
= 15V
= 10Ω, I
= 30A
R
g
= 10Ω, I
= 30A
C
R
g
C
800
600
E
OFF
600
400
E
OFF
400
200
0
200
0
20 40
60 80 100
120
T
J
(°C)
150
250
350
450
V
CE
(V)
140 160
8/20
DocID026409 Rev 2
STGB30H60DLFB, STGW30H60DLFB
Electrical characteristics
Figure 20. Switching times vs. collector current
Figure 21. Switching times vs. gate resistance
GIPG300620141033FSR
GIPG300620141039FSR
t
t
(ns)
(ns)
T
J
= 175°C, V
GE
= 15
V
,
R
G
= 10ꢀ, V
CC
= 400V
T
J
= 175°C, V
GE
= 15
V
,
I
C
= 30A, V
CC
= 400V
t
doff
t
doff
100
100
10
t
f
t
f
10
R
G
(ꢀ)
30
I
C
(A)
0
50
10
0
10
20
30
40
20
40
Figure 22. Switching-off losses vs. capacitive
load
GIPG300620141047FSR
E
(μ
o
J
f
)
f
L
snub
= 100μH, V
GE
= 15
V
,
= 30A, V
CC
= 320V
I
C
300
250
200
150
T
J
= 175°C
T
J
= 25°C
100
50
C(nF)
0
20
40
60
80
DocID026409 Rev 2
9/20
Electrical characteristics
STGB30H60DLFB, STGW30H60DLFB
Figure 23. Thermal impedance for IGBT
ZthTO2T_B
K
δ
=0.5
0.2
0.1
0.05
10
-1
0.02
Zth=k Rthj-c
δ
=tp/t
0.01
Single pulse
10
-4
tp
t
10
-2
10
-5
10
-2
10
-1
10
-3
p
(s)
t
Figure 24. Thermal impedance for diode
10/20
DocID026409 Rev 2
STGB30H60DLFB, STGW30H60DLFB
Test circuits
3
Test circuits
Figure 25. Test circuit for inductive load
switching
Figure 26. Gate charge test circuit
k
k
k
k
k
k
AM01504v1
AM01505v1
Figure 27. Switching waveform
Figure 28. Diode reverse recovery waveform
Q
rr
90%
di/dt
10%
V
G
I
F
t
rr
90%
10%
t
s
t
f
V
CE
T
r
(Voff)
Tcross
t
90%
10%
I
RRM
I
RRM
I
C
Td(off)
T
o
ff
Td(on)
T
o
n
Tf
V
RRM
T
r
(Ion)
dv/dt
AM01506v1
AM01507v1
DocID026409 Rev 2
11/20
Package mechanical data
STGB30H60DLFB, STGW30H60DLFB
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
ECOPACK is an ST trademark.
2
4.1
D PAK,
STGB30H60DLFB
Figure 29. D²PAK (TO-263) drawing
0079457_U
12/20
DocID026409 Rev 2
STGB30H60DLFB, STGW30H60DLFB
Package mechanical data
Table 8. D²PAK (TO-263) mechanical data
mm
Dim.
Min.
Typ.
Max.
A
A1
b
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
1.10
10
4.60
0.23
0.93
1.70
0.60
1.36
9.35
8.00
1.50
10.40
8.90
7.25
b2
c
c2
D
D1
D2
E
7.75
1.30
E1
E2
e
8.50
6.85
8.70
7.05
2.54
e1
H
4.88
15
5.28
15.85
2.69
2.79
1.40
1.75
J1
L
2.49
2.29
1.27
1.30
L1
L2
R
0.4
V2
0°
8°
DocID026409 Rev 2
13/20
Package mechanical data
STGB30H60DLFB, STGW30H60DLFB
Figure 30. D²PAK footprint
(a)
16.90
12.20
5.08
1.60
3.50
9.75
Footprint
a. All
dimension are in millimeters.
14/20
DocID026409 Rev 2
STGB30H60DLFB, STGW30H60DLFB
Package mechanical data
4.2
TO-247, STGW30H60DLFB
Figure 31. TO-247 drawing
0075325_G
DocID026409 Rev 2
15/20
Package mechanical data
STGB30H60DLFB, STGW30H60DLFB
Table 9. TO-247 mechanical data
mm.
Typ.
Dim.
Min.
Max.
A
A1
b
4.85
2.20
1.0
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
5.60
14.80
4.30
b1
b2
c
2.0
3.0
0.40
19.85
15.45
5.30
14.20
3.70
D
E
e
5.45
18.50
5.50
L
L1
L2
∅
P
∅
R
S
3.55
4.50
5.30
3.65
5.50
5.70
16/20
DocID026409 Rev 2
STGB30H60DLFB, STGW30H60DLFB
Packaging mechanical data
5
Packaging mechanical data
Figure 32. Tape
10 pitches cumulative
tolerance on tape +/- 0.2 mm
P0
D
Top cover
tape
P2
T
E
F
W
K0
B1
B0
For machine ref. only
including draft and
A0
D1
P1
radii concentric around B0
User direction of feed
R
Bending radius
User direction of feed
AM08852v1
DocID026409 Rev 2
17/20
Packaging mechanical data
STGB30H60DLFB, STGW30H60DLFB
Figure 33. Reel
T
REEL DIMENSIONS
40mm min.
Access hole
At slot location
B
D
C
N
A
G measured at hub
Full radius
Tape slot
in core for
tape start 25 mm min.
width
AM08851v2
Table 10. D²PAK (TO-263) tape and reel mechanical data
Tape Reel
mm
mm
Dim.
Dim.
Min.
Max.
Min.
Max.
A0
B0
D
10.5
15.7
1.5
10.7
15.9
1.6
A
B
C
D
G
N
T
330
13.2
26.4
30.4
1.5
12.8
20.2
24.4
100
D1
E
1.59
1.65
11.4
4.8
1.61
1.85
11.6
5.0
F
K0
P0
P1
P2
R
3.9
4.1
11.9
1.9
12.1
2.1
Base qty
Bulk qty
1000
1000
50
T
0.25
23.7
0.35
24.3
W
18/20
DocID026409 Rev 2
STGB30H60DLFB, STGW30H60DLFB
Revision history
6
Revision history
Table 11. Document revision history
Changes
Date
Revision
04-Jul-2014
23-Jul-2014
1
2
Initial release.
Document status promoted from preliminary data to production data
DocID026409 Rev 2
19/20
STGB30H60DLFB, STGW30H60DLFB
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Y
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20/20
DocID026409 Rev 2
