STMicroelectronics-STGD6M65DF2
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STGD6M65DF2
Trench gate field-stop IGBT, M series 650 V, 6 A low loss
Datasheet – production data
Features
6 µs of short-circuit withstand time
V
CE(sat)
= 1.55 V (typ.) @ I
C
= 6 A
Tight parameter distribution
Safer paralleling
Low thermal resistance
Soft and very fast recovery antiparallel diode
Applications
Motor control
UPS
PFC
Figure 1: Internal schematic diagram
Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the M series
IGBTs, which represent an optimal balance
between inverter system performance and
efficiency where low-loss and short-circuit
functionality are essential. Furthermore, the
positive V
CE(sat)
temperature coefficient and tight
parameter distribution result in safer paralleling
operation.
Table 1: Device summary
Order code
Marking
Package
Packing
STGD6M65DF2
G6M65DF2
DPAK
Tape and reel
August 2016
DocID028703 Rev 3
1/20
This is information on a product in full production.
Contents
STGD6M65DF2
Contents
2/20
DocID028703 Rev 3
STGD6M65DF2
Electrical ratings
1
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
V
V
CES
Collector-emitter voltage (V
GE
= 0 V)
650
Continuous collector current at T
C
= 25 °C
Continuous collector current at T
C
= 100 °C
Pulsed collector current
12
A
I
C
6
A
24
A
V
GE
Gate-emitter voltage
±20
V
Continuous forward current at T
C
= 25 °C
Continuous forward current at T
C
= 100 °C
Pulsed forward current
12
A
I
F
6
24
A
I
FP
A
P
TOT
T
STG
T
J
Total dissipation at T
C
= 25 °C
Storage temperature range
88
W
°C
°C
– 55 to 150
– 55 to 175
Operating junction temperature range
Notes:
(1)
Pulse width limited by maximum junction temperature.
Table 3: Thermal data
Parameter
Symbol
R
thJC
Value
1.7
Unit
Thermal resistance junction-case IGBT
Thermal resistance junction-case diode
Thermal resistance junction-ambient
°C/W
°C/W
°C/W
R
thJC
5
R
thJA
100
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Electrical characteristics
STGD6M65DF2
2
Electrical characteristics
T
C
= 25 °C unless otherwise specified
Table 4: Static characteristics
Symbol
Parameter
Test conditions
V
GE
= 0 V, I
C
= 250 µA
V
GE
= 15 V, I
C
= 6 A
Min. Typ. Max. Unit
Collector-emitter breakdown
voltage
V
(BR)CES
650
V
1.55
1.9
2.0
V
GE
= 15 V, I
C
= 6 A,
T
J
= 125 °C
Collector-emitter saturation
voltage
V
CE(sat)
V
V
GE
= 15 V, I
C
= 6 A,
T
J
= 175 °C
2.1
I
F
= 6 A
2.2
2.0
1.9
6
V
F
Forward on-voltage
I
F
= 6 A, T
J
= 125 °C
I
F
= 6 A, T
J
= 175 °C
V
CE
= V
GE
, I
C
= 250 µA
V
GE
= 0 V, V
CE
= 650 V
V
V
GE(th)
I
CES
Gate threshold voltage
Collector cut-off current
Gate-emitter leakage current
5
7
V
25
µA
µA
I
GES
V
CE
= 0 V, V
GE
= ± 20 V
±250
Table 5: Dynamic characteristics
Test conditions
Symbol
Parameter
Min. Typ. Max. Unit
530
31
C
ies
Input capacitance
–
–
–
–
Output
capacitance
C
oes
V
CE
= 25 V, f = 1 MHz, V
GE
= 0 V
pF
nC
Reverse transfer
capacitance
11
C
res
Q
g
–
–
–
–
–
–
Total gate charge
21.2
5.2
Gate-emitter
charge
V
CC
= 520 V, I
C
= 6 A, V
GE
= 15 V
Q
ge
Gate-collector
charge
Q
gc
–
8.8
–
4/20
DocID028703 Rev 3
STGD6M65DF2
Symbol
t
d(on)
t
r
Electrical characteristics
Table 6: IGBT switching characteristics (inductive load)
Parameter
Test conditions
Min. Typ. Max.
Unit
Turn-on delay
time
15
5.8
828
90
–
–
–
–
–
ns
ns
Current rise
time
Turn-on
(di/dt)
on
t
d(off)
t
f
A/µs
ns
current slope
Turn-off-delay
time
V
CE
= 400 V, I
C
= 6 A, V
GE
= 15 V,
Current fall
time
130
ns
Turn-on
switching
energy
0.036
0.200
–
–
mJ
mJ
Turn-off
switching
energy
Total switching
energy
E
ts
t
d(on)
t
r
0.236
17
–
–
–
–
–
–
mJ
ns
Turn-on delay
time
Current rise
time
7
ns
Turn-on
current slope
(di/dt)
on
t
d(off)
t
f
685
86
A/µs
ns
Turn-off-delay
time
V
CE
= 400 V, I
C
= 6 A, V
GE
= 15 V,
Current fall
time
205
ns
Turn-on
switching
energy
0.064
–
mJ
Turn-off
switching
energy
0.290
0.354
–
–
mJ
mJ
Total switching
energy
E
ts
t
sc
V
CC
≤
400 V, V
GE
= 15 V, T
Jstart
= 150 °C
V
CC
≤
400 V, V
GE
= 13 V, T
Jstart
= 150 °C
6
–
–
µs
µs
Short-circuit
withstand time
10
Notes:
(1)
Turn-on switching energy includes reverse recovery of the diode.
(2)
Turn-off switching energy also includes the tail of the collector current.
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Electrical characteristics
Symbol
STGD6M65DF2
Min. Typ. Max. Unit
Table 7: Diode switching characteristics (inductive load)
Parameter
Test conditions
Reverse recovery
time
t
rr
–
–
–
140
210
6.6
–
–
–
ns
nC
A
Reverse recovery
charge
Q
rr
I
rrm
I
F
= 6 A, V
R
= 400 V, V
GE
= 15 V
di/dt = 1000 A/µs
Reverse recovery
current
Peak rate of fall of
reverse recovery
current during t
b
dI
rr
/dt
–
430
–
A/µs
Reverse recovery
energy
E
rr
t
rr
–
–
–
–
16
200
473
9.6
–
–
–
–
µJ
ns
nC
A
Reverse recovery
time
Reverse recovery
charge
Q
rr
I
rrm
I
F
= 6 A, V
R
= 400 V, V
GE
= 15 V
di/dt = 1000 A/µs
Reverse recovery
current
Peak rate of fall of
reverse recovery
current during t
b
dI
rr
/dt
E
rr
–
–
428
32
–
–
A/µs
µJ
Reverse recovery
energy
6/20
DocID028703 Rev 3
STGD6M65DF2
Electrical characteristics
2.1
Electrical characteristics (curves)
Figure 2: Power dissipation vs. case
temperature
Figure 3: Collector current vs. case
temperature
Figure 4: Output characteristics (T
J
= 25 °C)
Figure 5: Output characteristics (T
J
= 175 °C)
Figure 6: V
CE(sat)
vs. junction temperature
Figure 7: V
CE(sat)
vs. collector current
DocID028703 Rev 3
7/20
Electrical characteristics
Figure 8: Collector current vs. switching
STGD6M65DF2
Figure 9: Forward bias safe operating area
frequency
Figure 10: Transfer characteristics
Figure 11: Diode V
F
vs. forward current
Figure 12: Normalized V
GE(th)
vs. junction
temperature
Figure 13: Normalized V
(BR)CES
vs. junction
temperature
8/20
DocID028703 Rev 3
STGD6M65DF2
Electrical characteristics
Figure 15: Gate charge vs. gate-emitter
voltage
Figure 14: Capacitance variations
Figure 16: Switching energy vs. collector
current
Figure 17: Switching energy vs. gate
resistance
Figure 19: Switching energy vs. collector
emitter voltage
Figure 18: Switching energy vs. temperature
DocID028703 Rev 3
9/20
Electrical characteristics
Figure 20: Short-circuit time and current vs.
STGD6M65DF2
Figure 21: Switching times vs. collector
current
V
GE
Figure 23: Reverse recovery current vs. diode
current slope
Figure 22: Switching times vs. gate
resistance
Figure 25: Reverse recovery charge vs. diode
current slope
Figure 24: Reverse recovery time vs. diode
current slope
10/20
DocID028703 Rev 3
STGD6M65DF2
Electrical characteristics
Figure 26: Reverse recovery energy vs. diode current slope
Figure 27: Thermal impedance for IGBT
ZthTO2T_B
K
δ=0.5
0.2
0.1
0.05
10
-1
0.02
Zth=k Rthj-c
δ=tp/t
0.01
Single pulse
tp
t
10
-2
10
-5
10
-2
10
-4
10
-1
10
-3
(s)
t
p
Figure 28: Thermal impedance for diode
DocID028703 Rev 3
11/20
Test circuits
STGD6M65DF2
3
Test circuits
Figure 29:
Test circuit for inductive load
switching
Figure 30:
Gate charge test circuit
V
CC
A
B
A
C
E
12 V
47 kΩ
1 kΩ
L
=
1
00 µH
G
100 nF
B
V
CC
3
.
3
µF
1000
µF
C
G
D
.
U
.
T
V
i
≤ V
GMAX
I
G
=CONST
100 Ω
D.U.
T
.
R
G
E
2200
µF
+
2.7 kΩ
V
G
–
47 kΩ
1 kΩ
P
W
AM
0
1504v1
AM01505v1
Figure 31:
Switching waveform
Figure 32:
Diode reverse recovery waveform
12/20
DocID028703 Rev 3
STGD6M65DF2
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
ECOPACK
®
is an ST trademark.
DocID028703 Rev 3
13/20
Package information
STGD6M65DF2
4.1
DPAK (TO-252) type A2 package information
Figure 33: DPAK (TO-252) type A2 package outline
0068772_type-A2_rev21
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STGD6M65DF2
Package information
Table 8: DPAK (TO-252) type A2 mechanical data
mm
Dim.
Min.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
4.95
6.40
5.10
2.16
4.40
9.35
1.00
2.60
0.65
0.60
Typ.
Max.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
5.25
6.60
5.30
2.40
4.60
10.10
1.50
3.00
0.95
1.00
A
A1
A2
b
b4
c
c2
D
D1
E
5.10
E1
e
5.20
2.28
e1
H
L
L1
L2
L4
R
2.80
0.80
0.20
V2
0°
8°
DocID028703 Rev 3
15/20
Package information
STGD6M65DF2
Figure 34: DPAK (TO-252) recommended footprint (dimensions are in mm)
16/20
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STGD6M65DF2
Package information
4.2
DPAK (TO-252) packing information
Figure 35: DPAK (TO-252) tape outline
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17/20
Package information
STGD6M65DF2
Figure 36: DPAK (TO-252) reel outline
Table 9: DPAK (TO-252) tape and reel mechanical data
Tape
Reel
mm
mm
Max.
330
Dim.
Dim.
Min.
6.8
Max.
7
Min.
A0
B0
B1
D
A
B
C
D
G
N
T
10.4
10.6
12.1
1.6
1.5
12.8
20.2
16.4
50
13.2
18.4
22.4
1.5
1.5
D1
E
1.65
7.4
1.85
7.6
F
K0
P0
P1
P2
R
2.55
3.9
2.75
4.1
Base qty.
Bulk qty.
2500
2500
7.9
8.1
1.9
2.1
40
T
0.25
15.7
0.35
16.3
W
18/20
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STGD6M65DF2
Revision history
5
Revision history
Table 10: Document revision history
Changes
Date
Revision
30-Nov-2015
1
First release.
Modified:
Table 4: “Static characteristics”
,
Table 5: “Dynamic
characteristics”
,
Table 6: “IGBT switching characteristics (inductive
load)”
and
Table 7: “Diode switching characteristics (inductive load)”
13-Jan-2016
2
Added:
Section 2.1: “Electrical characteristics (curves)”
Minor text changes
04-Aug-2016
3
Document status promoted from preliminary to production data.
DocID028703 Rev 3
19/20
STGD6M65DF2
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20/20
DocID028703 Rev 3
