STMicroelectronics-STGP15M120F3
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STGP15M120F3
Datasheet
Trench gate field-stop, 1200 V, 15 A, low-loss M series IGBT in a TO-220 package
Features
•
•
•
•
•
•
10 μs of minimum short-circuit withstand time
V
CE(sat)
= 1.85 V (typ.) @ I
C
= 15 A
Tight parameter distribution
TAB
Positive V
CE(sat)
temperature coefficient
Low thermal resistance
3
2
1
TO-220
Maximum junction temperature: T
J
= 175 °C
Applications
C(2, TAB)
•
•
•
•
Industrial drives
UPS
G(1)
Solar
Welding
Description
E(3)
G1C2TE3
This device is an IGBT developed using an advanced proprietary trench gate field-
stop structure. The device is part of the M series IGB
T
s
, which represent an optimal
balance between inverter system performance and efficiency where the low-loss and
the short-circuit functionality is essential. Furthermore, the positive V
CE(sat)
temperature coefficient and the tight parameter distribution result in safer paralleling
operation.
Product status link
Product summary
Order code
STGP15M120F3
Marking
Package
Packing
G15M120F3
TO-220
Tube
DS11255
–
Rev 3
–
August 2018
For further information contact your local STMicroelectronics sales office.
STGP15M120F3
Electrical ratings
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
1200
30
Unit
V
V
Collector-emitter voltage (V
= 0 V)
CES
GE
Continuous collector current at T
= 25 °C
A
C
I
C
Continuous collector current at T
= 100 °C
15
A
C
I
Pulsed collector current
Gate-emitter voltage
60
A
CP
V
±20
V
GE
P
T
o
tal dissipation at T
= 25 °C
259
W
°C
°C
TOT
C
T
Storage temperature range
-55 to 150
-55 to 175
stg
T
Operating junction temperature range
J
1. Pulse
width is limited by maximum junction temperature.
Table 2.
Thermal data
Symbol
Parameter
Value
0.58
Unit
R
thJC
Thermal resistance junction-case
°C/W
R
Thermal resistance junction-ambient
62.5
thJA
DS11255
–
Rev 3
page 2/15
STGP15M120F3
Electrical characteristics
2
Electrical characteristics
T
J
= 25 °C unless otherwise specified
Table 3.
Static characteristics
Test conditions
Symbol
Parameter
Min.
Typ.
Max.
Unit
V
V
V
V
= 0
V
, I
= 2
m
A
Collector-emitter breakdown voltage
1200
V
(BR)CES
GE
GE
GE
C
= 15
V
, I
=
1
5 A
1.85
2.1
2.3
C
= 15 V, I
= 15 A,
C
V
T =
125 °C
J
Collector-emitter saturation voltage
V
CE(sat)
V
= 15
V
, I
=
3
0 A,
C
GE
2.2
6
T =
175 °C
J
V
V
CE
V
GE
V
CE
= V
, I
= 500 μA
GE C
Gate threshold voltage
Collector cut-off current
Gate-emitter leakage current
5
7
V
GE(th)
I
= 0
V
, V
=
1
200 V
25
μA
nA
CES
GES
CE
I
= 0
V
, V
=
±
20 V
±250
GE
Table 4.
Dynamic characteristics
Test conditions
Symbol
Parameter
Min.
Typ.
985
118
38
Max.
Unit
pF
C
Input capacitance
Output capacitance
Reverse transfer capacitance
T
o
tal gate charge
–
–
–
–
–
–
–
–
–
–
ies
V
V
= 25
V
, f = 1
M
Hz,
= 0 V
CE
C
oes
pF
GE
C
res
pF
Q
V
V
= 960
V
, I
=
1
5 A,
53
nC
nC
g
CC
C
= 0 to 15 V
Q
GE
Gate-emitter charge
8
ge
Q
gc
Gate-collector charge
–
32
–
nC
Table 5.
Switching characteristics (inductive load)
Test conditions
Symbol
Parameter
Min.
Typ.
26
Max.
Unit
ns
t
Turn-on delay time
Current rise time
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
d(on)
t
12
ns
r
(di/dt)
Turn-on current slope
Turn-off delay time
Current fall time
1000
122
163
0.55
0.85
1.4
A/μs
ns
on
V
V
= 600
V
, I
=
1
5 A,
C
CE
GE
t
d(off)
= 15 V, R
= 22 Ω,
G
t
ns
f
E
Turn-on switching energy
Turn-off switching energy
T
o
tal switching energy
mJ
mJ
mJ
on
E
off
E
ts
DS11255
–
Rev 3
page 3/15
STGP15M120F3
Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
25
Max.
Unit
ns
t
Turn-on delay time
Current rise time
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
d(on)
t
14
ns
r
V
V
= 600
V
, I
=
1
5 A,
C
CE
GE
(di/dt)
Turn-on current slope
Turn-off delay time
Current fall time
857
136
270
1.1
A/μs
ns
on
= 15 V, R
= 22 Ω,
G
t
d(off)
T =
175 °C
J
t
ns
f
E
Turn-on switching energy
Turn-off switching energy
T
o
tal switching energy
mJ
mJ
mJ
on
E
1.13
2.23
off
E
ts
V
≤ 600 V, V
= 15 V,
GE
CC
t
Short-circuit withstand time
10
–
μs
sc
T
= 150 °C
Jstart
1. Including
the recovery of the external diode. The diode is the same of the co-packed STGWA15M120DF3 device.
2. Including
the tail of the collector current.
DS11255
–
Rev 3
page 4/15
STGP15M120F3
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1.
Power dissipation vs case temperature
Figure 2.
Collector current vs case temperature
GIPD271020141420FSR
P
tot
(W)
GIPD291020141132FSR
I
C
(A)
V
GE
≥
15
V
,
T
J
≤
175 °C
V
GE
≥
15
V
,
T
J
≤
175 °C
30
25
20
15
10
250
200
150
100
50
0
5
0
T
C
(°C)
T
C
(°C)
100
150
100
150
0
50
0
50
Figure 3.
Output characteristics (T
J
= 25 °C)
Figure 4.
Output characteristics (T
J
= 175°C)
GIPD291020141140FSR
GIPD291020141151FSR
I
C
(A)
I
C
(A)
V
GE
=15V
V
GE
=15V
13V
50
50
13V
40
40
11V
11V
30
20
30
20
9V
9V
10
10
0
7V
V
CE
(V)
0
0
V
CE
(V)
1
2
3
4
5
0
1
2
3
4
5
Figure 5.
V
CE(sat)
vs junction temperature
Figure 6.
V
CE(sat)
vs collector current
GIPD291020141158FSR
V
CE(sat)
GIPD291020141315FSR
V
CE(sat)
(V)
V
GE
=15V
(V)
T
j
=175°C
T
j
=25°C
V
GE
=15V
I
C
=30A
3.2
2.8
2.4
2.0
3.2
2.8
2.4
2.0
I
C
=15A
T
j
=-40°C
1.6
1.2
I
C
=7.5A
150
1.6
1.2
0.8
T
C
(°C)
I
C
(A)
100
15
20
25
-50
0
50
0
5
10
DS11255
–
Rev 3
page 5/15
STGP15M120F3
Electrical characteristics (curves)
Figure 7.
Collector current vs switching frequency
Figure 8.
Safe operating area
GIPD291020141321FSR
GIPD291020141330FSR
I
C
(A)
I
C
(A)
T
C
=80°C
40
1µs
T
C
=100°C
30
10µs
10
20
100µs
10
Rectangular current shape,
(duty cycle=0.5, Vcc= 600V Rg=22Ω,
Single pulse,
T
c
=25°C
Tj<175°C, V
GE
=15V
1ms
C)
Vge=0/15V
, Tj=175 °
0
1
1
f(kHz)
V
CE
(V)
10
1
10
100
1000
Figure 10.
Normalized V
GE(th)
vs junction temperature
Figure 9.
Transfer characteristics
GIPD291020141347FSR
GIPD291020141405FSR
I
C
(A)
V
GE(th)
(norm)
V
CE
=V
GE
Tj=25°C
50
40
30
I
C
=500µA
1.1
1.0
0.9
V
CE
= 8V
20
10
0
0.8
0.7
Tj=175°C
V
GE
(V)
150
7
9
11
100
3
5
50
T
C
(°C)
0
-50
Figure 11.
Normalized V
(BR)CES
vs junction temperature
Figure 12.
Capacitance variations
GIPD291020141507FSR
GIPD291020141443FSR
V
(BR)CES
C(pF)
I
C
=2mA
(norm)
1.04
Cies
1000
100
1.0
Coes
Cres
0.96
f= 1MHz
10
1
0.92
0.88
10
100
V
CE
(V)
1
-50
0
50
100
150
T
C
(°C)
0.1
DS11255
–
Rev 3
page 6/15
STGP15M120F3
Electrical characteristics (curves)
Figure 13.
Gate charge vs gate-emitter voltage
Figure 14.
Switching energy vs collector current
GIPD291020141517FSR
V
GE
(V)
GIPD291020141521FSR
E(mJ)
V
CC
= 960 V
I
C
= 15 A
I
G
= 1 mA
V
CC
=600
V
,
V
GE
=15V
Rg=22Ω, Tj=175°C
2.5
16
12
8
Eon
2
Eoff
1.5
1
0.5
0
4
0
0
10
20
30
40
50
Q
g
(nC)
0
5
10
15
20
25
30 I
C
(A)
Figure 15.
Switching energy vs gate resistance
Figure 16.
Switching energy vs junction temperature
GIPD291020141526FSR
GIPD291020141532FSR
E(mJ)
E(mJ)
V
CC
=600
V
,
V
GE
=15V
I
C
=15A, Tj=175°C
V
CC
=600
V
,
I
C
=15A, Rg=22Ω
V
GE
=15V
Eon
1.1
1
1.8
1.6
1.4
1.2
Eon
Eoff
0.9
0.8
Eoff
0.7
0.6
0.5
1
0.8
0
20
40
60
80
100 R
g
(Ω)
50
100
150
T
J
(°C)
0
Figure 18.
Short-circuit time and current vs V
GE
Figure 17.
Switching energy vs collector emitter voltage
GIPD291020141536FSR
GIPD291020141543FSR
E(mJ)
t
sc
(µs)
I
sc
(A)
Eon
Tj=175°C
Rg=22Ω
V
GE
=15
V
,
I
C
=15A,
V
CC
≤
600V
T
J
≤
150 °C
Isc
1.9
40
80
1.5
1.1
Eoff
tsc
30
20
10
60
40
0.7
0.3
20
200
400
600
800
V
CE
(V)
9
10
11 12
V
GE
(V)
13
14 15
DS11255
–
Rev 3
page 7/15
STGP15M120F3
Electrical characteristics (curves)
Figure 19.
Switching times vs collector current
Figure 20.
Switching times vs gate resistance
GIPD291020141715FSR
GIPD291020141725FSR
t(ns)
t(ns)
V
CC
=600
V
,
V
GE
=15V
t
f
Rg=22Ω
Tj=175°C,
t
f
100
100
t
doff
t
doff
t
don
t
don
10
t
r
10
1
t
r
5
V
CC
=600
V
,
V
GE
=15V
Tj=175°C,
I
C
=15A
1
10
15
20
25
30 I
C
(A)
0
20 40
60
80
R
g
(Ω)
100
0
Figure 21.
Thermal impedance
ZthTO2T_B
K
δ=0.5
0.2
0.1
0.05
10
-1
0.02
Zth=k Rthj-c
δ=tp/t
0.01
Single pulse
10
-4
tp
t
10
-2
10
-5
10
-2
10
-1
10
-3
t
p
(s)
DS11255
–
Rev 3
page 8/15
STGP15M120F3
Test circuits
3
Test circuits
Figure 22.
Test circuit for inductive load switching
Figure 23.
Gate charge test circuit
A
B
A
C
E
k
L
=
1
0
0
µ
H
k
G
B
V
CC
3
.
3
µF
1000
µF
C
k
G
D
.
U
.
T
k
R
G
E
+
k
–
k
AM01505v1
AM01504v1
Figure 24.
Switching waveform
90%
10%
V
G
90%
10%
V
CE
Tr(
V
o
ff)
Tcross
90%
10%
I
C
Td(off)
Toff
Td(on)
Ton
Tf
Tr(Ion)
AM01506v1
DS11255
–
Rev 3
page 9/15
STGP15M120F3
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions
DS11255
–
Rev 3
page 10/15
STGP15M120F3
TO-220 type A package information
4.1
TO-220 type A package information
Figure 25.
TO-220 type A package outline
0015988_typeA_Rev_21
DS11255
–
Rev 3
page 11/15
STGP15M120F3
TO-220 type A package information
Table 6.
TO-220 type A package mechanical data
mm
Dim.
Min.
4.40
0.61
1.14
0.48
15.25
Typ.
Max.
4.60
0.88
1.55
0.70
15.75
A
b
b1
c
D
D1
E
1.27
10.00
2.40
4.95
1.23
6.20
2.40
13.00
3.50
10.40
2.70
5.15
1.32
6.60
2.72
14.00
3.93
e
e1
F
H1
J1
L
L1
L20
L30
øP
Q
16.40
28.90
3.75
2.65
3.85
2.95
DS11255
–
Rev 3
page 12/15
STGP15M120F3
Revision history
Table 7.
Document revision history
Date
Version
Changes
10-Sep-2015
17-Apr-2018
01-Aug-2018
1
2
3
Initial release.
Removed maturity status indication from cover page. The document status is
production data.
Minor text changes
DS11255
–
Rev 3
page 13/15
STGP15M120F3
Contents
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
2
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
3
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
9
Package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10
TO-220 type A package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
10
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
DS11255
–
Rev 3
page 14/15
STGP15M120F3
IMPORTANT NOTICE – PLEASE READ CAREFULLY
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T
.
A
ll other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2018 STMicroelectronics – All rights reserved
DS11255
–
Rev 3
page 15/15
