STMicroelectronics-STGP19NC60KD
| Part # | STMicroelectronics-STGP19NC60KD |
Download  | STMicroelectronics-STGP19NC60KD |
STGB19NC60KD
STGF19NC60KD – STGP19NC60KD
20 A – 600 V – short circuit rugged IGBT
Features
■
Low on-voltage drop (V
)
CE(sat)
■
Low C
/ C
ratio (no cross conduction
res
ies
susceptibility)
3
3
■
Short circuit withstand time 10 µs
1
2
1
2
■
IGBT co-packaged with ultra fast free-wheeling
D PAK
TO-220
diode
Applications
3
2
1
■
High frequency inverters
■
Motor drivers
TO-220FP
Description
Figure 1.
Internal schematic diagram
This IGBT utilizes the advanced PowerMESH™
process resulting in an excellent trade-off
between switching performance and low on-state
behavior.
Table 1.
Device summary
Order codes
Marking
Package
D
2
P
A
K
Packaging
STGB19NC60KDT4
STGF19NC60KD
STGP19NC60KD
GB19NC60KD
GF19NC60KD
GP19NC60KD
T
a
pe and reel
T
u
be
TO-220FP
TO-220
T
u
be
May 2008
Rev 2
1/17
17
Contents
STGB19NC60KD – STGF19NC60KD – STGP19NC60KD
Contents
1
2
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7
3
4
5
6
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Packing mechanical data
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2/17
STGB19NC60KD – STGF19NC60KD – STGP19NC60KD
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Value
Unit
Parameter
D
2
P
A
K
TO-220
TO-220FP
V
CES
Collector-emitter voltage (V
GE
= 0)
600
V
(1)
I
C
I
C
Collector current (continuous) at T
C
= 25 °C
Collector current (continuous) at T
C
= 100 °C
T
u
rn-off latching current
35
20
16
10
A
A
A
A
V
A
(1)
(2)
(3)
I
CL
I
CP
75
75
20
20
Pulsed collector current
V
GE
Gate-emitter voltage
I
F
Diode RMS forward current at T
C
= 25 °C
Surge non repetitive forward current t
p
= 10 ms
sinusoidal
I
FSM
50
A
P
TOT
T
o
tal dissipation at T
C
= 25 °C
125
32
W
µs
°C
Short circuit withstand time, V
CE
= 0.5 V
(BR)CES
t
scw
10
T
j
= 125 °C, R
G
= 10
Ω
,
V
GE
= 12 V
T
j
Operating junction temperature
– 55 to 150
1. Calculated
according to the iterative formula:
T
J
(
MAX
)
–
T
c
I
c
(
T
c
)
=
–
————————————————————————————
R
thj
–
c
×
V
CE
(
sat
)(
MAX
)
⋅ (
T
c
,
I
c
)
2. V
clamp
= 80%,(V
CES
), T
j
=150°C, R
G
= 10
Ω
, V
GE
= 15 V
3. Pulse
width limited by max. junction temperature allowed
Table 3.
Symbol
Thermal resistance
Value
Unit
Parameter
D
2
P
A
K
TO-220
TO-220FP
Thermal resistance junction-case IGBT max.
Thermal resistance junction-case diode max.
0.95
3
3.9
5.6
°C/W
°C/W
°C/W
R
thj-case
R
thj-amb
Thermal resistance junction-ambient max.
62.5
3/17
Electrical characteristics
STGB19NC60KD – STGF19NC60KD – STGP19NC60KD
2
Electrical characteristics
(T
= 25 °C unless otherwise specified)
CASE
Table 4.
Symbol
Static
Parameter
Test conditions
I
C
= 1 mA
Min. Typ. Max.
Unit
Collector-emitter breakdown
voltage (V
GE
= 0)
V
(BR)CES
600
V
V
V
GE
= 15
V
,
I
C
= 12 A
V
GE
= 15
V
,
I
C
= 12 A,
Tc = 125 °C
2.0
1.8
2.75
Collector-emitter saturation
voltage
V
CE(sat)
V
Collector cut-off current
(V
GE
= 0)
V
CE
= 600 V
150 µA
I
CES
V
GE(th)
I
GES
V
CE
= 600
V
,
T
C
= 125 °C
1
mA
Gate threshold voltage
V
CE
= V
GE
, I
C
= 250 µA
V
GE
= 20
V
4.5
6.5
V
Gate-emitter leakage
current (V
CE
= 0)
100 nA
S
(1)
Forward transconductance
V
CE
= 15 V
,
I
C
= 12 A
15
g
fs
1. Pulsed:
Pulse duration = 300 µs, duty cycle 1.5%
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
Input capacitance
C
ies
C
oes
C
res
1170
127
28
pF
pF
pF
V
CE
= 25
V
, f = 1
M
Hz,
V
GE
= 0
Output capacitance
Reverse transfer
capacitance
Q
g
Q
ge
Q
gc
T
o
tal gate charge
V
CE
= 480
V
,
I
C
= 12 A,
V
GE
= 15 V
55
11
26
nC
nC
nC
Gate-emitter charge
Gate-collector charge
(see Figure 19)
4/17
STGB19NC60KD – STGF19NC60KD – STGP19NC60KD
Electrical characteristics
Min. Typ. Max.
Unit
Table 6.
Switching on/off (inductive load)
Parameter Test
conditions
T
u
rn-on delay time
Current rise time
(di/dt)
on
T
u
rn-on current slope
Symbol
t
d(on)
t
r
V
CC
= 480
V
,
I
C
= 12 A
R
G
= 10
Ω
, V
GE
= 15
V
,
(see Figure 18)
30
8
ns
ns
1450
A/µs
V
CC
= 480
V
,
I
C
= 12 A
R
G
= 10
Ω
, V
GE
= 15
V
,
T
c
= 125 °C
t
d(on)
t
r
T
u
rn-on delay time
Current rise time
30
8
ns
ns
(di/dt)
on
T
u
rn-on current slope
1380
A/µs
(see Figure 18)
t
r
(V
off
) Off
voltage rise time
V
CC
= 480
V
,
I
C
= 12 A
R
G
= 10
Ω
, V
GE
= 15
V
,
(see Figure 18)
35
105
85
ns
ns
ns
t
d
(
off
t
f
)
T
u
rn-off delay time
Current fall time
V
cc
= 480
V
,
I
C
= 12 A,
R
G
= 10
Ω
, V
GE
= 15 V
T
c
= 125 °C
t
r
(V
off
) Off
voltage rise time
65
ns
ns
ns
t
d
(
off
t
f
)
T
u
rn-off delay time
Current fall time
145
125
(see Figure 18)
Table 7.
Symbol
Switching energy (inductive load)
Parameter
Test conditions
Min Typ.
Max Unit
Eon
T
u
rn-on switching losses
T
u
rn-off switching losses
T
o
tal switching losses
V
CC
= 480
V
,
I
C
= 12 A
R
G
= 10
Ω
, V
GE
= 15
V
,
(see Figure 18)
165
255
420
µJ
µJ
µJ
(1)
E
off
E
ts
V
CC
= 480
V
,
I
C
= 12 A
R
G
= 10
Ω
, V
GE
= 15
V
,
T
C
= 125 °C
Eon
T
u
rn-on switching losses
T
u
rn-off switching losses
T
o
tal switching losses
250
445
695
µJ
µJ
µJ
(1)
E
off
E
ts
(see Figure 18)
1. Turn-off
losses include also the tail of the collector current.
5/17
Electrical characteristics
STGB19NC60KD – STGF19NC60KD – STGP19NC60KD
Table 8.
Symbol
Collector-emitter diode
Parameter
Test conditions
I
F
= 12 A
Min. Typ.
Max. Unit
1.9
1.6
V
V
V
F
Forward on-voltage
I
F
= 12 A, T
c
= 125 °C
t
rr
I
F
= 12 A,V
R
= 40
V
,
Reverse recovery time
Reverse recovery charge
Reverse recovery current
31
30
2
ns
nC
A
Q
rr
I
rrm
di/dt = 100 A/
µ
s
(see Figure 21)
t
rr
I
F
= 12 A,V
R
= 40
V
,
T
c
=125 °C, di/dt = 100 A/
µ
s
(see Figure 21)
Reverse recovery time
Reverse recovery charge
Reverse recovery current
50
70
4
ns
nC
A
Q
rr
I
rrm
6/17
STGB19NC60KD – STGF19NC60KD – STGP19NC60KD
Electrical characteristics
2.1
Electrical characteristics (curves)
Figure 2.
Output characteristics
Figure 3.
Transfer characteristics
HV4
3
025
HV4
3
020
I
C
(A)
I
C
(A)
V
CE
= 15 V
V
GE
=15V
100
100
8
0
60
40
20
0
14V
8
0
1
3
V
60
40
20
0
12V
11V
10V
9V
8
V
0
5
10
15
20
25
3
0
V
CE
(V)
0
3
5
8
10
1
3
15
V
GE
(V)
Figure 4.
Transconductance
Figure 5.
Collector-emitter on voltage vs
temperature
HV4
3
100_
b
HV4
3
110
Gf
s
(
S
)
8
V
CE(
sa
t)
(V)
T
J
=-50°C
25A
2.4
2.
3
2.1
2.0
1.
8
1.7
1.5
1.4
1.2
7.5
7
6.5
6
T
J
=25°C
5.5
5
12A
6A
4.5
4
T
J
=125°C
3
.5
3
2.5
2
1.5
-75
0
4
6
8
-50 -25
25 50 75
100 125
T
J(°C)
150
2
10
12
I
C
(A)
Figure 6.
Gate charge vs gate-source voltage
Figure 7.
Capacitance variations
HV4
3
000
C ( p F )
2 0 0 0
1500
1000
5 0 0
Cie
s
Coe
s
Cre
s
0
0
10
20
3
0
40
V
C E
( V )
7/17
Electrical characteristics
STGB19NC60KD – STGF19NC60KD – STGP19NC60KD
Figure 8.
Normalized gate threshold voltage
Figure 9.
vs temperature
Collector-emitter on voltage vs
collector current
HV4
3
090
HV4
3
070
V
CE(
sa
t)
V
GE(th)
(norm)
(V)
I
C
=250
µ
A
1.15
1.10
1.05
-50°C
2.55
2.
3
1.00
0.95
0.90
0.
8
5
0.
8
0
2.05
1.
8
25°C
1.55
1.
3
1.05
0.
8
125°C
15
0.75
0.70
T
J
(°C)
0
20
25
I
C
(A)
3
5 40
5
10
3
0
150
-100
-50
0
50
100
Figure 10.
Normalized breakdown voltage vs
Figure 11.
Switching losses vs temperature
temperature
HV4
3
0
8
0
BV
CE
S
(norm)
1.10
I
C
=250
µ
A
1.0
8
1.06
1.04
1.02
1.00
0.9
8
0.96
0.94
50
100
150
-50
0
-100
T
J
(°C)
Figure 12.
Switching losses vs gate resistance Figure 13.
Switching losses vs collector
current
8/17
STGB19NC60KD – STGF19NC60KD – STGP19NC60KD
Electrical characteristics
Figure 14.
Turn-off SOA
Figure 15.
Emitter-collector diode
characteristics
Figure 16.
Thermal impedance for TO-220,
D²
P
A
K
Figure 17.
Thermal impedance for TO-220FP
9/17
Test circuits
STGB19NC60KD – STGF19NC60KD – STGP19NC60KD
Figure 19.
Gate charge test circuit
3
Test circuits
Figure 18.
Test circuit for inductive load
switching
Figure 20.
Switching waveforms
Figure 21.
Diode recovery times waveform
10/17
STGB19NC60KD – STGF19NC60KD – STGP19NC60KD
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECO
P
A
CK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECO
P
ACK is an ST trademark.
11/17
Package mechanical data
STGB19NC60KD – STGF19NC60KD – STGP19NC60KD
TO-220 mechanical data
mm
Typ
inch
Typ
Dim
Min
Max
Min
Max
A
b
4.40
0.61
1.14
0.4
8
15.25
4.60
0.
88
1.70
0.70
15.75
0.17
3
0.024
0.044
0.01
9
0.6
0.1
8
1
0.0
3
4
0.066
0.027
0.62
b
1
c
D
D1
E
1.27
0.050
10
10.40
2.70
5.15
1.
3
2
6.60
2.72
14
0.
393
0.0
9
4
0.1
9
4
0.04
8
0.244
0.0
9
4
0.511
0.1
3
7
0.40
9
0.106
0.202
0.051
0.256
0.107
0.551
0.154
e
2.40
4.
9
5
1.2
3
6.20
2.40
1
3
e1
F
H1
J1
L
L1
L20
L
3
0
∅
P
Q
3
.50
3
.
93
16.40
0.645
2
8
.
9
0
1.1
3
7
3
.75
3
.
8
5
2.
9
5
0.147
0.104
0.151
0.116
2.65
12/17
STGB19NC60KD – STGF19NC60KD – STGP19NC60KD
Package mechanical data
TO-220FP mechanical data
mm.
Typ
inch
Dim.
Min.
4.40
2.5
Max.
4.60
2.7
Min.
Typ.
Max.
0.1
8
1
0.106
0.10
8
0.027
0.0
39
0.067
0.067
0.204
0.106
0.40
9
A
B
0.17
3
0.0
98
0.0
98
0.017
0.0
3
0
0.045
0.045
0.1
9
5
0.0
9
4
0.
393
D
2.5
2.75
0.70
1.00
1.50
1.50
5.20
2.70
10.40
E
0.45
0.75
1.15
1.15
4.
9
5
2.40
10
F
F1
F2
G
G1
H
L2
L
3
L4
L5
L6
L7
Di
a
16
0.6
3
0
2
8
.6
9
.
8
0
2.
9
3
0.6
10.60
3
.6
1.126
0.
38
5
0.114
0.626
0.
3
54
0.11
8
1.204
0.417
0.141
0.645
0.
3
66
0.126
15.
9
0
9
16.40
9
.
3
0
3
.2
3
L3
L6
L7
Di
a
1
2 3
L5
L2
L4
7012510-I
13/17
Package mechanical data
STGB19NC60KD – STGF19NC60KD – STGP19NC60KD
D²
P
A
K (TO-26
3
) mechanical data
mm
Typ
inch
Typ
Dim
Min
Max
Min
Max
A
A1
b
4.40
0.0
3
0.70
1.14
0.45
1.2
3
8
.
9
5
7.50
10
4.60
0.2
3
0.
93
1.70
0.60
1.
3
6
9
.
3
5
0.17
3
0.001
0.027
0.045
0.017
0.04
8
0.
3
52
0.2
9
5
0.
39
4
0.
33
4
0.1
8
1
0.00
9
0.0
3
7
0.067
0.024
0.05
3
0.
3
6
8
b
2
c
c2
D
D1
E
10.40
0.40
9
E1
e
8
.50
2.54
0.1
e1
H
4.
88
15
5.2
8
15.
8
5
2.6
9
2.7
9
1.40
1.75
0.1
9
2
0.5
9
0
0.0
99
0.0
9
0
0.05
0.20
8
0.624
0.106
0.110
0.055
0.06
9
J1
L
2.4
9
2.2
9
1.27
1.
3
0
L1
L2
R
0.051
0.4
0.016
V2
0°
8
°
0°
8
°
0079457_M
14/17
STGB19NC60KD – STGF19NC60KD – STGP19NC60KD
Packing mechanical data
5
Packing mechanical data
2
D PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
24.4
100
0.059
13.2 0.504
0.520
0795
26.4 0.960
1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
TAPE MECHANICAL DATA
1000
mm
inch
DIM.
MIN. MAX. MIN. MAX.
10.5 10.7
0.413 0.421
15.7 15.9
0.618 0.626
A0
B0
D
1.5
1.6 0.059
0.063
D1
E
1.59 1.61
0.062 0.063
1.65 1.85
0.065 0.073
F
11.4
4.8
3.9
11.9
1.9
50
11.6 0.449
0.456
5.0 0.189
0.197
4.1 0.153
0.161
12.1 0.468
0.476
2.1 0.075
0.082
1.574
K0
P0
P1
P2
R
T
0.25 0.35
0.0098 0.0137
23.7 24.3
0.933 0.956
W
* on sales type
15/17
Revision history
STGB19NC60KD – STGF19NC60KD – STGP19NC60KD
6
Revision history
Table 9.
Date
Document revision history
Revision
Changes
08-May-2008
1
Initial release
– Value on
T
a
ble 3: Thermal resistance
has been changed.
28-May-2008
2
– Inserted
Figure 16: Thermal impedance for TO-220, D²
P
A
K
and
Figure 17: Thermal impedance for TO-220FP
16/17
STGB19NC60KD – STGF19NC60KD – STGP19NC60KD
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS “AUTOMOTIVE
GRADE” MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2008 STMicroelectronics – All rights reserved
STMicroelectronics group of companies
Australia – Belgium – Brazil – Canada – China – Czech Republic – Finland – France – Germany – Hong Kong – India – Israel – Italy – Japan –
Malaysia – Malta – Morocco – Singapore – Spain – Sweden – Switzerland – United Kingdom – United States of America
17/17
