STMicroelectronics-STGP30V60DF
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STGB30V60D
F
,
S
TGP30V60D
F
,
STGW30V60D
F
,
S
TGWT30V60DF
Trench gate field-stop IGB
T
, V
s
eries
600
V
,
3
0 A very high speed
Datasheet
–
production data
T
A
B
Features
T
A
B
•
Maximum junction temperature: T
J
= 175 °C
•
Tail-less switching off
3
3
2
1
•
V
CE(sat)
= 1.85 V (typ.) @ I
C
= 30 A
•
Tight parameters distribution
•
Safe paralleling
1
D²PAK
TO-220
TAB
•
Low thermal resistance
•
Very fast soft recovery antiparallel diode
3
3
2
2
1
1
TO-3P
Applications
TO-247
•
Photovoltaic inverters
•
Uninterruptible power supply
•
Welding
Figure 1. Internal schematic diagram
C (2, TAB)
•
Power factor correction
•
Very high frequency converters
G (1)
Description
This device is an IGBT developed using an
advanced proprietary trench gate field stop
structure. The device is part of the V series of
IGB
T
s
, which represent an optimum compromise
between conduction and switching losses to
maximize the efficiency of very high frequency
converters. Furthermore, a positive V
CE(sat)
temperature coefficient and very tight parameter
distribution result in safer paralleling operation.
E (3)
Table 1. Device summary
Order codes
Marking
Package
Packaging
STGB30V60DF
STGP30V60DF
STGW30V60DF
STGWT30V60DF
GB30V60DF
GP30V60DF
GW30V60DF
GWT30V60DF
D²PAK
TO-220
TO-247
TO-3P
T
a
pe and reel
Tube
Tube
Tube
October 2013
DocID024361 Rev 4
1/22
This is information on a product in full production.
22
Electrical ratings
STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
V
CES
I
C
Collector-emitter voltage (V
GE
= 0)
Continuous collector current at T
C
= 25 °C
Continuous collector current at T
C
= 100 °C
Pulsed collector current
600
60
V
A
I
C
30
A
(1)
I
CP
120
A
V
GE
I
F
Gate-emitter voltage
±20
V
Continuous forward current at T
C
= 25 °C
Continuous forward current at T
C
= 100 °C
Pulsed forward current
60
A
I
F
30
A
(1)
I
FP
120
A
P
TOT
T
STG
T
J
T
o
tal dissipation at T
C
= 25 °C
Storage temperature range
258
W
°C
°C
– 55 to 150
– 55 to 175
Operating junction temperature
1. Pulse
width limited by maximum junction temperature.
Table 3. Thermal data
Parameter
Symbol
Value
Unit
R
thJC
R
thJC
R
thJA
Thermal resistance junction-case IGBT
Thermal resistance junction-case diode
Thermal resistance junction-ambient
0.58
2.08
50
°C/W
°C/W
°C/W
2/22
DocID024361 Rev 4
STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF
Electrical characteristics
2
Electrical characteristics
T
J
= 25 °C unless otherwise specified.
Table 4. Static characteristics
Test conditions
Symbol
Parameter
Min. Typ. Max. Unit
Collector-emitter
V
(BR)CES
breakdown voltage
(V
GE
= 0)
I
C
= 2 mA
600
V
V
GE
= 15
V
,
I
C
= 30 A
1.85
2.15
2.3
2.6
V
GE
= 15
V
,
I
C
= 30 A
T
J
= 125 °C
Collector-emitter saturation
voltage
V
CE(sat)
V
V
GE
= 15
V
,
I
C
= 30 A
T
J
= 175 °C
2.35
I
F
= 30 A
2
1.7
1.6
6
V
V
V
V
V
F
Forward on-voltage
I
F
= 30 A, T
J
= 125 °C
I
F
= 30 A, T
J
= 175 °C
V
CE
= V
GE
, I
C
= 1 mA
V
GE(th)
Gate threshold voltage
5
7
Collector cut-off current
(V
GE
= 0)
I
CES
V
CE
= 600 V
V
GE
= ± 20 V
25
μ
A
Gate-emitter leakage
I
GES
250
nA
current (V
CE
= 0)
Table 5. Dynamic characteristics
Test conditions
Symbol
Parameter
Min. Typ.
Max. Unit
C
ies
Input capacitance
–
–
3750
120
–
–
pF
pF
C
oes
Output capacitance
V
V
CE
= 25
V
, f = 1 MHz,
GE
= 0
Reverse transfer
capacitance
C
res
–
77
–
pF
Q
g
Q
ge
Q
gc
T
o
tal gate charge
–
–
–
163
28
–
–
–
nC
nC
nC
V
CC
= 480
V
,
I
C
= 30 A,
Gate-emitter charge
Gate-collector charge
V
72
DocID024361 Rev 4
3/22
Electrical characteristics
Symbol
STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF
Table 6. IGBT switching characteristics (inductive load)
Parameter
Test conditions
Min. Typ. Max.
Unit
t
d(on)
t
r
Turn-on delay time
Current rise time
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
45
16
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
ns
ns
(di/dt)
on
Turn-on current slope
1500
189
19
A/
μ
s
ns
V
CE
= 400 V, I
C
= 30 A,
R
G
= 10
Ω
, V
GE
= 15 V,
t
d
(
off
)
t
f
Turn-off delay time
Current fall time
ns
(1)
E
on
Turn-on switching losses
Turn-off switching losses
T
o
tal switching losses
Turn-on delay time
Current rise time
383
233
616
42
μ
J
(2)
E
off
μ
J
E
ts
t
d(on)
t
r
μ
J
ns
17
ns
(di/dt)
on
Turn-on current slope
1337
193
32
A/
μ
s
ns
V
CE
= 400 V, I
C
= 30 A,
t
d
(
off
)
t
f
Turn-off delay time
R
G
= 10
Ω
, V
GE
= 15 V,
Current fall time
ns
J
(1)
E
on
Turn-on switching losses
Turn-off switching losses
T
o
tal switching losses
794
378
1172
μ
J
(2)
E
off
μ
J
E
ts
μ
J
1. Energy
losses include reverse recovery of the diode.
2. Turn-off
losses include also the tail of the collector current.
Table 7. Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min. Typ.
Max. Unit
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
–
–
–
53
–
–
–
ns
nC
A
Q
rr
I
rrm
384
14.5
I
F
= 30 A, V
R
= 400
V
,
di/dt=1000 A/
μ
s
,
V
GE
= 15
V
,
Peak rate of fall of reverse
recovery current during t
b
dI
rr/
/dt
–
788
–
A/
μ
s
E
rr
t
rr
Reverse recovery energy
Reverse recovery time
Reverse recovery charge
Reverse recovery current
–
–
–
–
104
104
1352
26
–
–
–
–
μ
J
ns
nC
A
Q
rr
I
rrm
I
F
= 30 A, V
R
= 400
V
,
di/dt=1000 A/
μ
s
,
V
GE
= 15
V
,
Peak rate of fall of reverse
recovery current during t
b
dI
rr/
/dt
E
rr
–
–
310
407
–
–
A/
μ
s
μ
J
Reverse recovery energy
4/22
DocID024361 Rev 4
STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF
Electrical characteristics
2.1
Electrical characteristics (curves)
Figure 2. Power dissipation vs. case
temperature
Figure 3. Collector current vs. case temperature
AM17409v1
AM17410v1
P
tot
(W)
I
C
(A)
60
250
50
40
30
20
10
200
150
100
50
0
0
0
25
25
T
C
(°C)
100 125 150 175
100 125 150 175
50 75
T
C
(°C)
0
50 75
Figure 4. Output characteristics (T
J
=25°C)
Figure 5. Output characteristics (T
J
=175°C)
AM17411v1
AM17412v1
C
(A)
120
I
I
C
(A)
V
GE
=15V
120
100
80
V
GE
=15V
13V
13V
100
80
60
40
20
0
11V
11V
9V
60
40
9V
20
0
7V
V
V
CE
(V)
CE
(V)
3
4
3
4
0
1
2
0
1
2
Figure 6. V
CE(sat)
vs. junction temperature
Figure 7. V
CE(sat)
vs. collector current
AM17413v1
AM17414v1
V
CE(sat)
(V)
V
CE(sat)
(V)
3.2
3.0
2.8
2.6
T
j
=175°C
V
GE
=15V
V
GE
=15V
3.2
3.0
2.8
2.6
2.4
2.2
I
C
=60A
T
j
=25°C
I
C
=30A
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
2.0
1.8
1.6
T
j
=-40°C
I
C
=15A
1.4
1.2
T
C
(°C)
60 I
C
(A)
100
150
30
40
50
-50
0
50
0
10
20
DocID024361 Rev 4
5/22
Electrical characteristics
STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF
Figure 8. Collector current vs. switching
frequency
Figure 9. Forward bias safe operating area
AM17415v1
AM17416v1
I
C
(A)
80
I
C
(A)
T
C
=80°C
100
10
70
60
10μs
T
C
=100°C
100μs
1ms
50
40
30
20
1
0.1
Single pulse,
T
c
=25°C
Tj<175°C, V
GE
=15V
rectangular current shape,
(duty cycle=0.5, Vcc= 400V Rg=10Ω,
C)
10
0
Vge=0/15V
, Tj=175 °
0.01
f(kHz)
V
CE
(V)
100
1
10
1
10
Figure 10. Transfer characteristics
Figure 11. Diode V
F
vs. forward current
AM17417v1
AM17418v1
I
C
(A)
V
F
(A)
Tj=-40°C
Tj=-40°C
100
80
Tj=175°C
Tj=25°C
2.3
1.9
Tj=25°C
60
Tj=175°C
40
20
0
1.5
1.1
60
50
40
V
GE
(V)
I
F
(A)
9
10
11
30
7
8
10
20
Figure 12. Normalized V
GE(th)
vs junction
temperature
Figure 13. Normalized V
(BR)CES
vs. junction
temperature
AM17419v1
AM17420v1
V
GE(th)
(norm)
V
(BR)CES
(norm)
I
C
=2mA
V
CE
=V
GE
I
C
=1mA
1.1
1.0
0.9
0.8
1.0
0.9
0.7
0.6
150
150
100
100
50
50
T
C
(°C)
T
C
(°C)
0
0
-50
-50
6/22
DocID024361 Rev 4
STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF
Electrical characteristics
Figure 14. Capacitance variations
Figure 15. Gate charge vs. gate-emitter voltage
AM17421v1
AM17422v1
C(pF)
V
GE
(V)
10000
16
Cies
14
12
1000
10
8
Coes
6
4
Cres
100
10
2
0
10
100 125 150 175
75
V
CE
(V)
Q
g
(nC)
1
25 50
0.1
0
Figure 16. Switching losses vs. collector
current
Figure 17. Switching losses vs. gate resistance
AM17423v1
AM17424v1
E(μJ)
E(μJ)
Eon
V
CC
=400
V
,
V
GE
=15V
I
C
=30A, Tj=175°C
V
CC
=400
V
,
V
GE
=15V
Rg=10Ω, Tj=175°C
2000
1800
1600
Eon
Eoff
1200
1000
800
1400
1200
1000
800
Eoff
600
600
400
400
200
200
0
20
20
10
30
40
50
60
I
C
(A)
10
30
40
R
g
(Ω)
0
0
Figure 18. Switching losses vs. junction
temperature
Figure 19. Switching losses vs. collector
emitter voltage
AM17425v1
AM17426v1
E(μJ)
800
E(μJ)
1100
Eon
Eon
Eoff
V
CC
=400
V
,
V
GE
=15V
Tj=175°C
Rg=10Ω
V
GE
=15
V
,
I
C
=30A,
I
C
=30A, Rg=10Ω
700
900
700
600
500
400
300
500
Eoff
300
100
200
100
75
250
300 350 400 450
V
CE
(V)
100 125
150
T
J
(°C)
200
0
50
25
150
DocID024361 Rev 4
7/22
Electrical characteristics
STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF
Figure 20. Switching times vs. collector current
Figure 21. Switching times vs. gate resistance
AM17427v1
AM17428v1
t(ns)
t(ns)
V
CC
=400
V
,
V
GE
=15V
1000
Rg=10Ω
Tj=175°C,
V
CC
=400
V
, V
GE
=15V
I
C
=30A
Tj=175°C,
t
doff
t
doff
100
t
don
100
t
r
t
don
t
r
t
f
t
f
10
0
10
0
20
20
10
30
40
50
60
I
C
(A)
10
30
40
R
g
(Ω)
Figure 22. Reverse recovery current vs. diode
current slope
Figure 23. Reverse recovery time vs. diode
current slope
AM17429v1
AM17430v1
I
rm
(A)
t
rr
(μs)
Tj=175°C
V
r
=400V
I
F
=30A
40
V
r
=400V
I
F
=30A
200
30
Tj=25°C
150
100
20
Tj=175°C
10
0
50
0
Tj=25°C
1000
500
1000
1500
di/dt (A/μs)
500
1500 2000 2500
di/dt (A/μs)
0
0
Figure 24. Reverse recovery charge vs. diode
current slope
Figure 25. Reverse recovery energy vs. diode
current slope
AM17431v1
AM17432v1
Q
rr
(nC)
E
rr
(μJ)
Tj=175°C
V
r
=400V
V
r
=400V
I
F
=30A
Tj=175°C
I
F
=30A
2000
1000
800
600
400
200
0
1500
1000
Tj=25°C
Tj=25°C
500
0
1000
1000
500
1500 2000 2500
di/dt (A/μs)
500
1500 2000 2500
di/dt (A/μs)
0
0
8/22
DocID024361 Rev 4
STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF
Figure 26. Thermal data for IGBT
Electrical characteristics
ZthTO2T_B
K
10
-1
10
-2
δ
=0.5
0.2
0.1
0.05
0.02
Zth=k Rthj-c
δ
=tp/t
0.01
Single pulse
10
-4
tp
t
10
-2
10
-5
10
-3
10
-1
p
(s)
t
Figure 27.
Thermal data for diode
DocID024361 Rev 4
9/22
Test circuits
STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF
3
Test circuits
Figure 28. Test circuit for inductive load
switching
Figure 29. Gate charge test circuit
AM01504v1
AM01505v1
Figure 30. Switching waveform
Figure 31. Diode recovery time waveform
Q
rr
90%
di/dt
10%
V
G
I
F
t
rr
90%
10%
t
a
t
b
V
CE
T
r
(Voff)
Tcross
t
90%
10%
I
RRM
I
RRM
I
C
Td(off)
T
o
ff
Td(on)
T
o
n
Tf
T
r
(Ion)
V
F
dv/dt
AM01506v1
AM01507v1
10/22
DocID024361 Rev 4
STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
ECOPACK is an ST trademark.
Table 8. D²PAK (TO-263) mechanical data
mm
Dim.
Min.
Typ.
Max.
A
A1
b
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
10
4.60
0.23
0.93
1.70
0.60
1.36
9.35
b2
c
c2
D
D1
E
10.40
E1
e
8.50
2.54
e1
H
4.88
15
5.28
15.85
2.69
2.79
1.40
1.75
J1
L
2.49
2.29
1.27
1.30
L1
L2
R
0.4
V2
0°
8°
DocID024361 Rev 4
11/22
Package mechanical data
STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF
Figure 32. D²PAK (TO-263) drawing
0079457_T
Figure 33. D²PAK footprint
(a)
16.90
12.20
5.08
1.60
3.50
9.75
Footprint
a. All
dimensions are in millimeters
12/22
DocID024361 Rev 4
STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF
Package mechanical data
Table 9. TO-220 type A mechanical data
mm
Dim.
Min.
Typ.
Max.
A
b
4.40
0.61
1.14
0.48
15.25
4.60
0.88
1.70
0.70
15.75
b1
c
D
D1
E
1.27
10
10.40
2.70
5.15
1.32
6.60
2.72
14
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
3.50
3.93
16.40
28.90
∅
Q
P
3.75
2.65
3.85
2.95
DocID024361 Rev 4
13/22
Package mechanical data
STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF
Figure 34. TO-220 type A drawing
0015988_typeA_Rev_S
14/22
DocID024361 Rev 4
STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF
Table 10. TO-247 mechanical data
Package mechanical data
mm.
Dim.
Min.
Typ.
Max.
A
A1
b
4.85
2.20
1.0
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
5.60
14.80
4.30
b1
b2
c
2.0
3.0
0.40
19.85
15.45
5.30
14.20
3.70
D
E
e
5.45
18.50
5.50
L
L1
L2
∅
P
∅
R
S
3.55
4.50
5.30
3.65
5.50
5.70
DocID024361 Rev 4
15/22
Package mechanical data
STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF
Figure 35. TO-247 drawing
0075325_G
16/22
DocID024361 Rev 4
STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF
Table 11. TO-3P mechanical data
Package mechanical data
mm
Dim.
Min.
Typ.
Max.
A
A1
A2
b
4.60
1.45
1.20
0.80
1.80
2.80
0.55
19.70
5
1.50
1.40
1
1.65
1.60
1.20
2.20
3.20
0.75
20.10
b1
b2
c
0.60
19.90
13.90
D
D1
E
15.40
15.80
E1
E2
e
13.60
9.60
5.45
20
5.15
5.75
L
19.50
20.50
L1
L2
øP
Q
3.50
18.40
18.20
3.10
18.60
3.30
5
Q1
3.80
DocID024361 Rev 4
17/22
Package mechanical data
STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF
Figure 36. TO-3P drawing
8045950_A
18/22
DocID024361 Rev 4
STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF
Packaging mechanical data
5
Packaging mechanical data
Table 12.
D²PAK (TO-263) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
Min.
Max.
A0
B0
D
10.5
15.7
1.5
10.7
15.9
1.6
A
B
C
D
G
N
T
330
1.5
12.8
20.2
24.4
100
13.2
26.4
30.4
D1
E
1.59
1.65
11.4
4.8
1.61
1.85
11.6
5.0
F
K0
P0
P1
P2
R
3.9
4.1
11.9
1.9
12.1
2.1
Base qty
Bulk qty
1000
1000
50
T
0.25
23.7
0.35
24.3
W
DocID024361 Rev 4
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Packaging mechanical data
STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF
Figure 37. Tape
10 pitches cumulative
tolerance on tape +/- 0.2 mm
P0
Top cover
tape
P2
D
T
E
F
W
K0
B1
B0
For machine ref. only
including draft and
A0
D1
P1
radii concentric around B0
User direction of feed
R
Bending radius
User direction of feed
AM08852v1
Figure 38. Reel
T
REEL DIMENSIONS
40mm min.
Access hole
At slot location
B
D
C
N
A
G measured at hub
Full radius
Tape slot
in core for
tape start 25 mm min.
width
AM08851v2
20/22
DocID024361 Rev 4
STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF
Revision history
6
Revision history
Table 13. Document revision history
Changes
Date
Revision
14-Mar-2013
03-May-2013
1
2
Initial release.
04-Jun-2013
08-Oct-2013
3
4
Updated title, features and description in cover page.
DocID024361 Rev 4
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STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF
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