STMicroelectronics-STGP4M65DF2
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STGP4M65DF2
Trench gate field-stop IGBT, M series 650 V, 4 A low loss
Datasheet – production data
Features
6 µs of short-circuit withstand time
V
CE(sat)
= 1.6 V (typ.) @ I
C
= 4 A
Tight parameter distribution
Safer paralleling
Low thermal resistance
Soft and very fast recovery antiparallel diode
TAB
3
2
1
Applications
TO-220
Motor control
UPS
PFC
Figure 1: Internal schematic diagram
Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the M series
IGBTs, which represent an optimal balance
between inverter system performance and
efficiency where low-loss and short-circuit
functionality are essential. Furthermore, the
positive V
CE(sat)
temperature coefficient and tight
parameter distribution result in safer paralleling
operation.
Table 1: Device summary
Order code
Marking
Package
Packing
STGP4M65DF2
G4M65DF2
TO-220
Tube
November 2016
DocID028671 Rev 3
1/16
This is information on a product in full production.
Contents
STGP4M65DF2
Contents
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STGP4M65DF2
Electrical ratings
1
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
V
V
CES
Collector-emitter voltage (V
GE
= 0 V)
650
Continuous collector current at T
C
= 25 °C
Continuous collector current at T
C
= 100 °C
Pulsed collector current
8
A
I
C
4
A
16
A
V
GE
Gate-emitter voltage
±20
V
Continuous forward current at T
C
= 25 °C
Continuous forward current at T
C
= 100 °C
Pulsed forward current
8
A
I
F
4
16
A
A
P
TOT
T
STG
T
J
Total dissipation at T
C
= 25 °C
Storage temperature range
68
W
°C
°C
– 55 to 150
– 55 to 175
Operating junction temperature range
Notes:
(1)
Pulse width limited by maximum junction temperature.
Table 3: Thermal data
Parameter
Symbol
R
thJC
Value
2.2
Unit
°C/W
°C/W
°C/W
Thermal resistance junction-case IGBT
Thermal resistance junction-case diode
Thermal resistance junction-ambient
R
thJC
5
R
thJA
62.5
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Electrical characteristics
STGP4M65DF2
2
Electrical characteristics
T
C
= 25 °C unless otherwise specified
Table 4: Static characteristics
Symbol
Parameter
Test conditions
V
GE
= 0 V, I
C
= 250 µA
V
GE
= 15 V, I
C
= 4 A
Min. Typ. Max. Unit
Collector-emitter breakdown
voltage
V
(BR)CES
650
V
1.6
1.9
2.1
V
GE
= 15 V, I
C
= 4 A,
T
J
= 125 °C
Collector-emitter saturation
voltage
V
CE(sat)
V
V
GE
= 15 V, I
C
= 4 A,
T
J
= 175 °C
2.1
I
F
= 4 A
1.9
1.7
1.6
6
V
F
Forward on-voltage
I
F
= 4 A, T
J
= 125 °C
I
F
= 4 A, T
J
= 175 °C
V
CE
= V
GE
, I
C
= 250 µA
V
GE
= 0 V, V
CE
= 650 V
V
V
GE(th)
I
CES
Gate threshold voltage
Collector cut-off current
5
7
V
25
µA
Gate-emitter leakage
current
I
GES
V
CE
= 0 V, V
GE
= ± 20 V
±250
µA
Table 5: Dynamic characteristics
Test conditions
Symbol
C
ies
Parameter
Input capacitance
Output capacitance
Min. Typ. Max. Unit
–
–
369
–
–
C
oes
V
CE
= 25 V, f = 1 MHz,
V
GE
= 0 V
24.8
pF
nC
Reverse transfer
capacitance
C
res
–
8
–
Q
g
Q
ge
Q
gc
Total gate charge
–
–
–
15.2
3
–
–
–
V
CC
= 520 V, I
C
= 4 A,
V
GE
= 15 V
Gate-emitter charge
Gate-collector charge
7
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STGP4M65DF2
Electrical characteristics
Table 6: IGBT switching characteristics (inductive load)
Symbol
t
d(on)
t
r
Parameter
Turn-on delay time
Current rise time
Test conditions
Min. Typ. Max.
Unit
12
6.9
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
ns
ns
(di/dt)
on
Turn-on current slope
480
A/µs
ns
V
CE
= 400 V, I
C
= 4 A,
V
GE
= 15 V, R
G
= 47
Ω
t
d(off)
t
f
Turn-off-delay time
Current fall time
86
120
ns
Turn-on switching energy
Turn-off switching energy
Total switching energy
Turn-on delay time
Current rise time
0.040
0.136
0.176
11.6
8
mJ
mJ
mJ
ns
E
ts
t
d(on)
t
r
ns
(di/dt)
on
Turn-on current slope
410
A/µs
ns
V
CE
= 400 V, I
C
= 4 A,
V
GE
= 15 V, R
G
= 47
Ω,
T
J
= 175 °C
t
d(off)
t
f
Turn-off-delay time
85
Current fall time
211
ns
Turn-on switching energy
Turn-off switching energy
Total switching energy
0.067
0.210
0.277
mJ
mJ
mJ
E
ts
V
CC
≤
400 V, V
GE
= 15 V,
T
Jstart
= 150 °C
6
–
–
µs
µs
t
sc
Short-circuit withstand time
V
CC
≤
400 V, V
GE
= 13 V,
T
Jstart
= 150 °C
10
Notes:
(1)
Including the reverse recovery of the diode.
(2)
Including the tail of the collector current.
Table 7: Diode switching characteristics (inductive load)
Symbol
t
rr
Parameter
Test conditions
Min. Typ. Max. Unit
Reverse recovery time
Reverse recovery charge
Reverse recovery current
–
–
–
133
140
5
–
–
–
ns
nC
A
Q
rr
I
F
= 4 A, V
R
= 400 V,
I
rrm
V
GE
= 15 V, di/dt = 800 A/µs
Peak rate of fall of reverse
recovery current during t
b
dI
rr
/dt
–
520
–
A/µs
E
rr
t
rr
Reverse recovery energy
Reverse recovery time
Reverse recovery charge
Reverse recovery current
–
–
–
–
15
236
370
6.6
–
–
–
–
µJ
ns
nC
A
I
F
= 4 A, V
R
= 400 V,
V
GE
= 15 V, T
J
= 175 °C,
di/dt = 800 A/µs
Q
rr
I
rrm
Peak rate of fall of reverse
recovery current during t
b
dI
rr
/dt
E
rr
–
–
378
32
–
–
A/µs
µJ
Reverse recovery energy
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Electrical characteristics
STGP4M65DF2
2.1
Electrical characteristics (curves)
Figure 2: Power dissipation vs. case
temperature
Figure 3: Collector current vs. case
temperature
Figure 4: Output characteristics (T
J
= 25 °C)
Figure 5: Output characteristics (T
J
= 175 °C)
Figure 6: V
CE(sat)
vs. junction temperature
Figure 7: V
CE(sat)
vs. collector current
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STGP4M65DF2
Electrical characteristics
Figure 8: Collector current vs. switching
frequency
Figure 9: Forward bias safe operating area
Figure 10: Transfer characteristics
Figure 11: Diode V
F
vs. forward current
Figure 12: Normalized V
GE(th)
vs. junction
temperature
Figure 13: Normalized V
(BR)CES
vs. junction
temperature
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Electrical characteristics
Figure 14: Capacitance variations
STGP4M65DF2
Figure 15: Gate charge vs. gate-emitter
voltage
Figure 16: Switching energy vs. collector
current
Figure 17: Switching energy vs. gate
resistance
Figure 18: Switching energy vs. temperature
Figure 19: Switching energy vs. collector
emitter voltage
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STGP4M65DF2
Electrical characteristics
Figure 20: Short-circuit time and current
vs. V
GE
Figure 21: Switching times vs. collector
current
Figure 22: Switching times vs. gate
resistance
Figure 23: Reverse recovery current vs. diode
current slope
Figure 24: Reverse recovery time vs. diode
current slope
Figure 25: Reverse recovery charge vs. diode
current slope
Q
rr
IGBT170320161123RRQ
(nC)
V
T
CC
= 400 V, V
GE
= 15 V, I
= 175 °C
F
= 4 A,
j
370
365
360
355
350
0
150 300 450 600 750
di/dt (A/µs)
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Electrical characteristics
STGP4M65DF2
Figure 26: Reverse recovery energy vs. diode current slope
Figure 27: Thermal impedance for IGBT
ZthTO2T_B
K
δ=0.5
0.2
0.1
0.05
10
-1
0.02
Zth=k Rthj-c
δ=tp/t
0.01
Single pulse
tp
t
10
-2
10
-5
10
-2
10
-4
10
-1
10
-3
(s)
t
p
Figure 28: Thermal impedance for diode
CG20930
K
δ = 0.5
δ = 0.2
δ = 0.1
10
-1
Z =
k R
t
h
t
h
j
–
C
δ = t
/
Ƭ
p
δ = 0.05
δ = 0.02
δ = 0.01
t
p
Ƭ
SINGLE PULSE
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
(s)
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STGP4M65DF2
Test circuits
3
Test circuits
Figure 29:
Test circuit for inductive load
switching
Figure 30:
Gate charge test circuit
A
B
A
C
E
L
=
1
00 µH
G
B
V
CC
3
.
3
µF
1000
µF
C
G
D
.
U
.
T
R
G
E
+
–
AM
0
1504v1
Figure 31:
Switching waveform
Figure 32:
Diode reverse recovery waveform
di/dt
Q
rr
t
rr
I
F
t
s
t
f
t
I
RRM
10%
I
RRM
V
RRM
dv/dt
AM01507v1
DocID028671 Rev 3
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Package information
STGP4M65DF2
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
ECOPACK
®
is an ST trademark.
12/16
DocID028671 Rev 3
STGP4M65DF2
Package information
4.1
TO-220 type A package information
Figure 33: TO-220 type A package outline
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Package information
STGP4M65DF2
Table 8: TO-220 type A mechanical data
mm
Dim.
Min.
4.40
0.61
1.14
0.48
15.25
Typ.
Max.
4.60
0.88
1.55
0.70
15.75
A
b
b1
c
D
D1
E
1.27
10.00
2.40
4.95
1.23
6.20
2.40
13.00
3.50
10.40
2.70
5.15
1.32
6.60
2.72
14.00
3.93
e
e1
F
H1
J1
L
L1
L20
L30
øP
Q
16.40
28.90
3.75
2.65
3.85
2.95
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STGP4M65DF2
Revision history
5
Revision history
Table 9: Document revision history
Changes
Date
Revision
25-Nov-2015
1
First release.
Modified: features in cover page
Datasheet promoted from preliminary data to production data
Modified: Table 2:
“Absolute maximum ratings”
, Table 4:
“Static
characteristics”
, Table 5:
“Dynamic characteristics”
, Table 6:
“IGBT
switching characteristics (inductive load)”
and Table 7:
“Diode switching
characteristics (inductive load)”
30-Mar-2016
21-Nov-2016
2
3
Added: Section 2.1:
“Electrical characteristics (curves)”
Minor text changes
Minor text changes
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STGP4M65DF2
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–
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–
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