STMicroelectronics-STGW20IH125DF
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STGW20IH125DF
STGWT20IH125DF
1250
V
,
2
0 A IH series
trench gate field-stop IGBT
Datasheet
–
production data
Features
TAB
•
Designed for soft commutation only
•
Maximum junction temperature: T
J
= 175 °C
•
Minimized tail current
•
V
CE(sat)
= 2.0 V (typ.) @ I
C
= 15 A
•
Tight parameters distribution
•
Safe paralleling
3
2
3
1
2
1
•
Very low V
F
soft recovery co-packaged diode
•
Low thermal resistance
TO-247
TO-3P
•
Lead free package
Applications
Figure 1. Internal schematic diagram
•
Induction heating
•
Microwave oven
•
Resonant converters
C (2, TAB)
Description
These IGB
T
s
a
re developed using an advanced
proprietary trench gate field-stop structure and
performance is optimized in both conduction and
switching losses. A freewheeling diode with a low
drop forward voltage is co-packaged. The result is
a product specifically designed to maximize
efficiency for any resonant and soft-switching
application.
G (1)
E (3)
Table 1. Device summary
Order code
Marking
Package
Packaging
STGW20IH125DF
STGWT20IH125DF
G20IH125DF
G20IH125DF
TO-247
TO-3P
Tube
Tube
February 2014
DocID025269 Rev 2
1/17
This is information on a product in full production.
17
Contents
STGW20IH125DF, STGWT20IH125DF
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/17
DocID025269 Rev 2
STGW20IH125DF, STGWT20IH125DF
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
V
CES
I
C
Collector-emitter voltage (V
GE
= 0)
Continuous collector current at T
C
= 25 °C
Continuous collector current at T
C
= 100 °C
Pulsed collector current
1250
V
A
40
I
C
20
80
A
(1)
I
CP
A
V
GE
I
F
Gate-emitter voltage
±20
V
Continuous forward current at T
C
= 25 °C
Continuous forward current at T
C
= 100 °C
Pulsed forward current
40
A
I
F
20
A
(1)
I
FP
80
A
P
TOT
T
STG
T
J
T
o
tal dissipation at T
C
= 25 °C
Storage temperature range
259
W
°C
°C
– 55 to 150
– 55 to 175
Operating junction temperature
1. Pulse
width limited by maximum junction temperature
Table 3. Thermal data
Parameter
Symbol
Value
Unit
R
thJC
R
thJC
R
thJA
Thermal resistance junction-case IGBT
Thermal resistance junction-case diode
Thermal resistance junction-ambient
0.58
1.47
50
°C/W
°C/W
°C/W
DocID025269 Rev 2
3/17
Electrical characteristics
STGW20IH125DF, STGWT20IH125DF
2
Electrical characteristics
T
J
= 25 °C unless otherwise specified.
Table 4. Static characteristics
Test conditions
Symbol
Parameter
Min. Typ. Max. Unit
Collector-emitter
V
(BR)CES
breakdown voltage
(V
GE
= 0)
I
C
= 2 mA
1250
V
V
V
GE
= 15
V
,
I
C
= 15 A
GE
= 15
V
,
I
C
= 15 A
2
2.5
1.5
2.2
T
J
= 125 °C
Collector-emitter saturation
voltage
V
CE(sat)
V
V
GE
= 15
V
,
I
C
= 15 A
T
J
= 175 °C
2.3
V
GE
= 15
V
,
I
C
= 30 A
I
F
= 15 A
2.55
1.1
1.05
1
I
F
= 15 A T
J
= 125 °C
I
F
= 15 A T
J
= 175 °C
I
F
= 30A
V
F
Forward on-voltage
V
1.25
6
V
GE(th)
Gate threshold voltage
V
CE
= V
GE
, I
C
= 500
μ
A
5
7
V
Collector cut-off current
(V
GE
= 0)
I
CES
V
CE
= 1250 V
V
GE
= ± 20 V
25
μ
A
Gate-emitter leakage
I
GES
250
nA
current (V
CE
= 0)
Table 5. Dynamic characteristics
Test conditions
Symbol
Parameter
Min. Typ.
Max. Unit
C
ies
Input capacitance
–
–
1290
96
–
–
pF
pF
C
oes
Output capacitance
V
CE
= 25
V
, f = 1 MHz,
V
GE
= 0
Reverse transfer
capacitance
C
res
–
30.6
–
pF
Q
g
Q
ge
Q
gc
T
o
tal gate charge
–
–
–
69
7.2
–
–
–
nC
nC
nC
V
CC
= 600
V
,
I
C
= 15 A,
Gate-emitter charge
Gate-collector charge
40.8
4/17
DocID025269 Rev 2
STGW20IH125DF, STGWT20IH125DF
Electrical characteristics
Table 6. IGBT switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min. Typ. Max.
Unit
t
d(off)
t
f
Turn-off delay time
Current fall time
106
79
ns
ns
μ
J
ns
ns
μ
J
V
CE
= 600 V, I
C
= 15 A,
–
–
–
–
R
G
= 10
Ω
, V
GE
= 15 V, see
(1)
E
off
Turn-off switching losses
Turn-off delay time
Current fall time
410
109
176
820
t
d(off)
t
f
V
CE
= 600 V, I
C
= 15 A,
–
–
–
–
R
G
= 10
Ω
, V
GE
= 15 V,
(1)
J
E
off
Turn-off switching losses
1. Turn-off
losses include also the tail of the collector current.
Table 7. IGBT switching characteristics (capacitive load)
Symbol
Parameter
Test conditions
Min. Typ. Max.
Unit
V
CC
= 900
V
,
R
G
= 10
Ω
,
I
C
= 30 A, L = 500
μ
H,
C
snub
= 330 n
F
,
s
ee
–
–
163
366
–
–
(1)
E
off
Turn-off switching losses
μ
J
V
CC
= 900
V
,
R
G
= 10
Ω
,
I
C
= 30 A, L = 500
μ
H,
C
snub
= 330 n
F
,
T
J
= 175 °C,
1. Turn-off
losses include also the tail of the collector current.
DocID025269 Rev 2
5/17
Electrical characteristics
STGW20IH125DF, STGWT20IH125DF
2.1
Electrical characteristics (curves)
Figure 2. Power dissipation vs. case
temperature
Figure 3. Collector current vs. case temperature
GIPD161220131549FSR
GIPD161220131556FSR
P
tot
I
C
(W)
(A)
40
V
GE
≥ 15
V
, T
J
≤ 175 °C
V
GE
≥ 15
V
, T
J
≤ 175 °C
250
35
200
150
100
30
25
20
15
10
5
50
0
0
0
25 50 75
100 125 150 175
0
25 50 75
100 125 150 175
T
T
C
(
°C
)
C
(
°C
)
Figure 4. Output characteristics (T
J
= 25°C)
Figure 5. Output characteristics (T
J
= 175°C)
GIPD161220131602FSR
GIPD161220131620FSR
I
C
I
C
(A)
(A)
V
GE
=15V
13V
V
GE
=15V
70
70
60
50
40
30
20
60
50
40
30
20
13V
11V
11V
9V
7V
9V
V
10
0
10
0
5
2
4
0
1
3
CE
(V)
0
1
2
3
4
5
V
CE
(V)
Figure 6. V
CE(sat)
vs. junction temperature
Figure 7. V
CE(sat)
vs. collector current
GIPD161220131648FSR
GIPD161220131702FSR
V
CE(sat)
(V)
V
CE(sat)
(V)
3.2
T
J
= 175
°C
V
GE
= 15V
V
GE
= 15V
I
C
= 30A
3.2
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
3.0
2.8
T = 25
°C
J
2.6
I
C
= 15A
2.4
2.2
T
J
= -40
°C
2.0
I
C
= 7.5A
1.8
1.6
1.4
0
5
10
15
20
25
-50
0
50
100
150
T
J
(
°C
)
I
C
(
A
)
6/17
DocID025269 Rev 2
STGW20IH125DF, STGWT20IH125DF
Electrical characteristics
Figure 8. Forward bias safe operating area
Figure 9. Transfer characteristics
GIPD161220131714FSR
GIPD161220131719FSR
I
C
I
C
(A)
(A)
45
V
CE
=10V
1 μs
40
35
10
10 μs
30
25
20
100 μs
1 ms
1
15
Single pulse
T
J
=175°C
T
c
= 25°C, T
J
≤
175°C
10
5
V
GE
= 15V
T
J
=25°C
0.1
0
1000
1
10
100
10
8
V
CE
(
V
)
9
11 V
GE
(V)
6
7
Figure 10. Diode V
F
vs. forward current
Figure 11. Normalized V
GE(th)
vs junction
temperature
GIPD161220131729FSR
GIPD281020131600FSR
V
GE(th)
F
(V)
V
(norm)
1.1
I
C
= 1mA
CE
= V
GE
2
V
T
J
= 25°C
1.8
1.0
0.9
0.8
T
J
= 175°C
1.6
1.4
T
J
= -40°C
1.2
1.0
0.7
0.6
0.8
0.6
0
10 20
30 40
I
F
(
A
)
-50
0
50
100
150
T
J
(°
C
)
50 60 70
Figure 12. Normalized V
(BR)CES
vs. junction
temperature
Figure 13. Capacitance variation
GIPD161220131741FSR
GIPD161220131745FSR
V
(BR)CES
(norm)
C
(pF)
1.04
1.02
0.98
I
C
= 2mA
C
ies
1000
100
10
1
C
C
oes
res
0.94
0.9
-50
0
50
100
150
T
J
(°
C
)
0.1
1
10
V
CE
(V)
100
DocID025269 Rev 2
7/17
Electrical characteristics
STGW20IH125DF, STGWT20IH125DF
Figure 14. Gate charge vs. gate-emitter voltage
Figure 15. Switching loss vs collector current
GIPD171220130851FSR
GIPD171220130858FSR
V
GE
(V)
E
off
(μJ)
V
CC
= 600
V
, V
GE
= 15
V
,
1600
R
G
= 10Ω
I
C
= 15A
GE
= 1mA
16
I
V
CC
= 960V
1200
800
T
J
= 175°C
12
8
T
J
= 25°C
400
0
4
0
0
10
20
30
I
C
(A)
0
20
40
60
Q
g
(n
C
)
Figure 16. Switching-off loss vs gate resistance
Figure 17. Switching-off loss vs temperature
GIPD171220130941FSR
GIPD171220130947FSR
E
off
(μJ)
E
off
(μJ)
V
CC
= 600
V
, V
GE
= 15
V
,
V
CC
= 600
V
, V
GE
= 15
V
,
R
G
= 10Ω, I
C
= 15A
I
C
= 15A
1000
800
800
600
T
J
= 175 °C
600
400
200
400
200
T
J
= 25 °C
125
0
10
20
30
40
R
G
(Ω)
25
50
75
100
150
T
J
(
°C
)
Figure 18. Switching-off loss vs collector-
emitter voltage
Figure 19. Switching times vs. collector current
GIPD171220130956FSR
GIPD171220131002FSR
E
off
(μJ)
t
(ns)
V
GE
= 15
V
,
T
J
= 175°C, V
GE
= 15
V
,
R
G
= 10Ω, I
C
= 15A
R
G
= 10Ω, V
CC
= 600V
1200
1000
800
t
f
T
J
= 175°C
100
600
t
doff
400
T
J
= 25°C
200
0
10
V
CE
(
V
)
I
C
(
A
)
250
450
650
850
0
5
10
15
20
25
30
8/17
DocID025269 Rev 2
STGW20IH125DF, STGWT20IH125DF
Electrical characteristics
Figure 20. Switching times vs. gate resistance
GIPD171220131047FSR
t
(ns)
T
J
= 175°C, V
GE
= 15
V
,
I
C
= 15A, V
CC
= 600V
t
f
100
t
doff
10
R
G
(
Ω
)
0
10
20
30
40
DocID025269 Rev 2
9/17
Electrical characteristics
STGW20IH125DF, STGWT20IH125DF
Figure 21. Thermal impedance for IGBT
ZthTO2T_B
K
10
-1
10
-2
δ
=0.5
0.2
0.1
0.05
0.02
Zth=k Rthj-c
δ
=tp/t
0.01
Single pulse
10
-4
tp
t
10
-2
10
-5
10
-3
10
-1
p
(s)
t
Figure 22. Thermal impedance for diode
10/17
DocID025269 Rev 2
STGW20IH125DF, STGWT20IH125DF
Test circuits
3
Test circuits
Figure 23. Test circuit for inductive load
switching
Figure 24. Test circuit for capacitive load
switching
Csnub
AM01504v1
AM17096v2
Figure 25. Gate charge test circuit
Figure 26. Switching waveform
90%
10%
V
G
90%
10%
V
CE
T
r
(Voff)
Tcross
90%
10%
I
C
Td(off)
T
o
ff
Td(on)
T
o
n
Tf
T
r
(Ion)
AM01505v1
AM01506v1
DocID025269 Rev 2
11/17
Package mechanical data
STGW20IH125DF, STGWT20IH125DF
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
ECOPACK is an ST trademark.
Figure 27. TO-247 drawing
0075325_G
12/17
DocID025269 Rev 2
STGW20IH125DF, STGWT20IH125DF
Package mechanical data
Table 8. TO-247 mechanical data
mm.
Dim.
Min.
4.85
Typ.
Max.
A
A1
b
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
5.60
14.80
4.30
2.20
1.0
b1
b2
c
2.0
3.0
0.40
19.85
15.45
5.30
14.20
3.70
D
E
e
5.45
18.50
5.50
L
L1
L2
∅
P
∅
R
S
3.55
4.50
5.30
3.65
5.50
5.70
DocID025269 Rev 2
13/17
Package mechanical data
STGW20IH125DF, STGWT20IH125DF
Figure 28. TO-3P drawing
8045950_A
14/17
DocID025269 Rev 2
STGW20IH125DF, STGWT20IH125DF
Package mechanical data
Table 9. TO-3P mechanical data
mm
Dim.
Min.
4.60
Typ.
Max.
A
A1
A2
b
5
1.45
1.20
0.80
1.80
2.80
0.55
19.70
1.50
1.40
1
1.65
1.60
1.20
2.20
3.20
0.75
20.10
b1
b2
c
0.60
19.90
13.90
D
D1
E
15.40
15.80
E1
E2
e
13.60
9.60
5.45
20
5.15
5.75
L
19.50
20.50
L1
L2
øP
Q
3.50
18.40
18.20
3.10
18.60
3.30
5
Q1
3.80
DocID025269 Rev 2
15/17
STGW20IH125DF, STGWT20IH125DF
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