STMicroelectronics-STGW25M120DF3
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STGW25M120DF3
Datasheet
Trench gate field-stop, 1200 V, 25 A, low-loss M series IGBT in a TO-247 package
Features
•
•
•
•
•
•
•
Maximum junction temperature: T
J
= 175 °C
10 μs of short-circuit withstand time
Low V
CE(sat)
= 1.85 V (typ.) @ I
C
= 25 A
Tight parameter distribution
3
2
Positive V
CE(sat)
temperature coefficient
Low thermal resistance
1
TO-247
Soft- and fast-recovery antiparallel diode
C(2, TAB)
Applications
•
•
•
•
Industrial drives
UPS
G(1)
Solar
Welding
Description
E(3)
NG1E3C2T
This device is an IGBT developed using an advanced proprietary trench gate field-
stop structure. The device is part of the M series IGB
T
s
, which represent an optimal
balance between inverter system performance and efficiency where the low-loss and
the short-circuit functionality is essential. Furthermore, the positive V
CE(sat)
temperature coefficient and the tight parameter distribution result in safer paralleling
operation.
Product status link
Product summary
Order code
Marking
STGW25M120DF3
G25M120DF3
TO-247
Package
Packing
Tube
DS10300
–
Rev 4
–
November 2019
For further information contact your local STMicroelectronics sales office.
STGW25M120DF3
Electrical ratings
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
1200
50
Unit
V
V
Collector-emitter voltage (V
= 0 V)
GE
CES
Continuous collector current at T
= 25 °C
A
C
I
C
Continuous collector current at T
= 100 °C
25
A
C
I
Pulsed collector current
Gate-emitter voltage
100
±20
±30
50
A
V
V
A
CP
V
GE
Transient gate-emitter voltage
Continuous forward current at T
= 25 °C
C
I
F
Continuous forward current at T
= 100 °C
25
100
A
A
C
I
Pulsed forward current
FP
P
T
T
o
tal power dissipation at T
= 25 °C
375
W
°C
°C
TOT
C
Storage temperature range
-55 to 150
-55 to 175
STG
T
Operating junction temperature range
J
1. Pulse
width is limited by maximum junction temperature.
Table 2.
Thermal data
Symbol
Parameter
Thermal resistance junction-case IGBT
Value
0.4
Unit
°C/W
°C/W
°C/W
R
thJC
thJA
Thermal resistance junction-case diode
Thermal resistance junction-ambient
0.96
50
R
DS10300
–
Rev 4
page 2/16
STGW25M120DF3
Electrical characteristics
2
Electrical characteristics
T
J
= 25 °C unless otherwise specified
Table 3.
Static characteristics
Test conditions
Symbol
Parameter
Min.
Typ.
Max.
Unit
Collector-emitter breakdown
voltage
V
V
= 0
V
, I
= 2
m
A
1200
V
(BR)CES
GE
C
V
V
= 15
V
, I
=
2
5 A
1.85
2.1
2.3
GE
C
= 15
V
, I
=
2
5 A,
GE
C
Collector-emitter saturation
voltage
V
T =
125 °C
J
V
V
CE(sat)
V
= 15
V
, I
=
2
5 A,
C
GE
2.2
T =
175 °C
J
I =
25 A
F
2.95
2.25
1.9
6
4.1
V
I =
25 A, T
= 125 °C
F
Forward on-voltage
F
J
I =
25 A, T
= 175 °C
F
J
V
V
= V
, I
= 1 mA
Gate threshold voltage
Collector cut-off current
Gate-emitter leakage current
5
7
V
GE(th)
CE
GE
C
I
V
= 0
V
, V
=
1
200 V
25
µA
nA
CES
GES
GE
CE
CE
I
V
= 0
V
, V
=
±
20 V
±250
GE
Table 4.
Dynamic characteristics
Test conditions
Symbol
Parameter
Input capacitance
Min.
Typ.
1550
180
65
Max.
Unit
C
–
–
–
–
–
–
–
–
–
–
ies
V
V
= 25
V
, f = 1
M
Hz,
= 0 V
CE
C
oes
Output capacitance
pF
GE
C
res
Reverse transfer capacitance
T
o
tal gate charge
Q
V
V
= 960
V
, I
=
2
5 A,
85
g
CC
C
= 0 to 15 V
Q
GE
Gate-emitter charge
11.5
ge
nC
Q
gc
Gate-collector charge
–
45.5
–
DS10300
–
Rev 4
page 3/16
STGW25M120DF3
Electrical characteristics
Table 5.
IGBT switching characteristics (inductive load)
Symbol
Parameter
Turn-on delay time
Test conditions
Min.
Typ.
28
Max.
Unit
ns
t
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
d(on)
t
Current rise time
15
ns
r
(di/dt)
Turn-on current slope
Turn-off delay time
1370
150
155
0.85
1.3
A/µs
ns
on
V
V
= 600
V
, I
=
2
5 A,
C
CE
GE
t
d(off)
= 15
V
, R
=
1
5 Ω
G
t
Current fall time
ns
f
E
Turn-on switching energy
Turn-off switching energy
T
o
tal switching energy
Turn-on delay time
mJ
mJ
mJ
ns
on
E
off
E
2.15
28
ts
t
d(on)
t
Current rise time
17
ns
r
V
V
= 600 V, I
= 25 A,
C
(di/dt)
CE
GE
Turn-on current slope
Turn-off delay time
1270
155
240
1.6
A/µs
ns
on
= 15
V
, R
=
1
5 Ω,
G
t
d(off)
T =
175 °C
J
t
Current fall time
ns
f
E
Turn-on switching energy
Turn-off switching energy
T
o
tal switching energy
mJ
mJ
mJ
on
E
1.9
off
E
3.5
ts
V
≤ 600 V, V
= 15 V,
GE
CC
t
Short-circuit withstand time
10
–
µs
sc
T
≤ 150 °C
Jstart
1. Including
the reverse recovery of the diode
2. Including
the tail of the collector current
Table 6.
Diode switching characteristics (inductive load)
Symbol
Parameter
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Peak rate of fall of reverse
Test conditions
Min.
Typ.
265
1.2
Max.
Unit
ns
t
–
–
–
–
–
–
rr
Q
rr
µC
A
I =
25 A, V
= 600
V
,
F
R
I
V
GE
= 15
V
,
d
i/dt = 1000 A/µs
19
rrm
dI /dt
rr
–
1090
–
A/µs
recovery current during t
b
E
Reverse recovery energy
Reverse recovery time
–
–
–
–
0.22
585
5
–
–
–
–
mJ
ns
µC
A
rr
t
rr
I =
25 A, V
= 600
V
,
F
R
Q
Reverse recovery charge
Reverse recovery current
Peak rate of fall of reverse
rr
V
= 15
V
, T
=
1
75 °C,
J
GE
I
30
rrm
di/dt = 1000 A/µs
dI /dt
rr
–
–
270
–
–
A/µs
mJ
recovery current during t
b
E
Reverse recovery energy
0.75
rr
DS10300
–
Rev 4
page 4/16
STGW25M120DF3
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1.
Power dissipation vs case temperature
Figure 2.
Collector current vs case temperature
GIPD301020140906FSR
P
tot
(W)
GIPD301020140909FSR
I
C
(A)
V
GE
≥
15
V
,
T
J
≤
175 °C
V
GE
≥
15
V
,
T
J
≤
175 °C
50
320
40
30
20
240
160
80
0
10
0
T
C
(°C)
T
C
(°C)
100
150
100
150
0
50
0
50
Figure 3.
Output characteristics (T
J
= 25 °C)
Figure 4.
Output characteristics (T
J
= 175 °C)
GIPD301020140913FSR
GIPD301020140919FSR
I
C
(A)
I
C
(A)
V
GE
=15V
13V
V
GE
=15V
13V
80
80
11V
60
40
11V
60
40
9V
9V
7V
20
0
20
0
7V
V
CE
(V)
V
CE
(V)
0
1
2
3
4
5
0
1
2
3
4
5
Figure 5.
V
CE(sat)
vs junction temperature
Figure 6.
V
CE(sat)
vs collector current
GIPD301020140924FSR
V
CE(sat)
GIPD301020141133FSR
V
CE(sat)
(V)
(V)
V
GE
=15V
T
j
=175°C
T
j
=25°C
V
GE
=15V
I
C
=50A
3.2
2.8
2.4
2.0
3.2
2.8
2.4
2.0
I
C
=25A
T
j
=-40°C
1.6
1.2
I
C
=12.5A
1.6
1.2
0.8
T
C
(°C)
I
C
(A)
100
150
30
40
-50
0
50
0
10
20
DS10300
–
Rev 4
page 5/16
STGW25M120DF3
Electrical characteristics (curves)
Figure 7.
Collector current vs switching frequency
Figure 8.
Safe operating area
GIPD301020141144FSR
GIPD301020141151FSR
I
C
(A)
I
C
(A)
T
C
=80°C
60
T
C
=100°C
100
10
1
1µs
40
20
10µs
100µs
1ms
Rectangular current shape,
(duty cycle=0.5, Vcc= 600V Rg=15Ω,
Single pulse,
T
c
=25°C
Tj<175°C, V
GE
=15V
C)
Vge=0/15V
, Tj=175 °
0
1
f(kHz)
V
CE
(V)
10
1
10
100
1000
Figure 10.
Diode V
F
vs forward current
Figure 9.
Transfer characteristics
GIPD301020141159FSR
GIPD301020141203FSR
I
C
(A)
V
F
(V)
T
j
=-40°C
Tj=25°C
6
5
4
3
2
80
60
40
V
CE
= 8V
T
j
=25°C
Tj=175°C
T
j
=175°C
20
0
1
0
V
GE
(V)
7
9
11
3
5
I
C
(A)
60
80
0
20
40
Figure 11.
Normalized V
GE(th)
vs junction temperature
Figure 12.
Normalized V
(BR)CES
vs junction temperature
GIPD301020141315FSR
GIPD301020141322FSR
V
(BR)CES
V
GE(th)
(norm)
I
C
=2mA
(norm)
V
CE
=V
GE
I
C
=1mA
1.1
1.04
1.0
0.9
1.00
0.96
0.8
0.7
0.92
0.88
150
100
50
-50
0
50
100
150
T
C
(°C)
T
C
(°C)
0
-50
DS10300
–
Rev 4
page 6/16
STGW25M120DF3
Electrical characteristics (curves)
Figure 13.
Capacitance variations
Figure 14.
Gate charge vs gate-emitter voltage
GIPD301020141335FSR
GIPD301020141341FSR
V
GE
(V)
C(pF)
V
CC
= 960 V
I
C
= 25 A
I
G
= 1 mA
16
12
8
Cies
1000
100
10
Coes
f= 1MHz
4
0
Cres
100
10
V
CE
(V)
0
20
40
60
80
Q
g
(nC)
1
0.1
Figure 15.
Switching energy vs collector current
Figure 16.
Switching energy vs gate resistance
GIPD301020141347FSR
GIPD301020141410FSR
E(mJ)
E(mJ)
V
CC
=600
V
,
V
GE
=15V
I
C
=25A, Tj=175°C
V
CC
=600
V
,
V
GE
=15V
Rg=15Ω, Tj=175°C
3.2
2.6
2.4
2.2
Eoff
Eoff
1.6
1.8
Eon
0.8
1.4
Eon
0.0
1.0
0
10
20
30
40
50 I
C
(A)
0
10
20
30
40
50 60
R
g
(Ω)
Figure 17.
Switching energy vs junction temperature
Figure 18.
Switching energy vs collector emitter voltage
GIPD301020141418FSR
GIPD301020141422FSR
E(mJ)
E(mJ)
V
CC
=600
V
,
V
GE
=15V
I
C
=25A, Rg=15Ω
Tj=175°C
Rg=15Ω
V
GE
=15
V
,
I
C
=25A,
1.8
2.5
2.0
1.5
1.6
1.4
1.2
Eoff
Eoff
Eon
1.0
0.5
1.0
0.8
Eon
0
50
100
150
T
J
(°C)
200
400
600
800
V
CE
(V)
DS10300
–
Rev 4
page 7/16
STGW25M120DF3
Electrical characteristics (curves)
Figure 19.
Short-circuit time and current vs V
GE
Figure 20.
Switching times vs collector current
GIPD301020141429FSR
GIPD301020141425FSR
t(ns)
t
sc
(µs)
I
sc
(A)
V
CC
=600
V
,
V
GE
=15V
V
CC
≤
600V
T
J
≤
150 °C
Isc
Rg=15Ω
Tj=175°C,
t
f
140
100
60
35
tsc
t
doff
100
t
don
25
15
5
t
r
10
1
20
20
10
30
40
50 I
C
(A)
0
9
10
11 12
V
GE
(V)
13
14 15
Figure 22.
Reverse recovery current vs diode current
slope
Figure 21.
Switching times vs gate resistance
GIPD301020141432FSR
GIPD301020141437FSR
t(ns)
I
rrm
V
CC
=600
V
,
V
GE
=15V
(A)
I
C
=25A
Tj=175°C,
V
CC
=600V, V
GE
=15V
I
F
=25A
Tj=175°C,
48
40
32
t
f
t
doff
100
t
don
t
r
24
16
10
60
R
g
(Ω)
0
10
20 30
40
50
200
800
1400
2000 di/dt(A/µs)
Figure 24.
Reverse recovery charge vs diode current
slope
Figure 23.
Reverse recovery time vs diode current slope
GIPD301020141439FSR
GIPD301020141442FSR
t
rr
Q
rr
(ns)
(µC)
700
5.2
5.0
4.8
4.6
600
500
400
300
V
CC
=600
V
,
V
GE
=15V
V
CC
=600
V
,
V
GE
=15V
4.4
I
F
=25A
Tj=175°C,
I
F
=25A
Tj=175°C,
4.2
200
200
800
1400
2000 di/dt(A/µs)
800
1400
2000 di/dt(A/µs)
DS10300
–
Rev 4
page 8/16
STGW25M120DF3
Electrical characteristics (curves)
Figure 25.
Reverse recovery energy vs diode current slope
GIPD301020141445FSR
E
rr
(mJ)
0.9
0.8
0.7
0.6
V
CC
=600
V
,
V
GE
=15V
0.5
I
F
=25A
Tj=175°C,
0.4
200
800
1400
2000 di/dt(A/µs)
Figure 26.
Thermal impedance for IGBT
ZthTO2T_A
K
δ = 0.5
δ = 0.2
δ = 0.05
δ = 0.1
δ = 0.02
10
-1
δ = 0.01
Single pulse
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
(s)
Figure 27.
Thermal impedance for diode
DS10300
–
Rev 4
page 9/16
STGW25M120DF3
Test circuits
3
Test circuits
Figure 28.
Test circuit for inductive load switching
Figure 29.
Gate charge test circuit
A
B
A
C
E
k
L
=
1
0
0
µ
H
k
G
B
V
CC
3
.
3
µF
1000
µF
C
k
G
D
.
U
.
T
k
R
G
E
+
k
–
k
AM01505v1
AM01504v1
Figure 31.
Diode reverse recovery waveform
Figure 30.
Switching waveform
di/dt
Q
rr
t
rr
90%
I
F
t
s
t
f
10%
V
G
90%
t
I
RRM
10%
10%
V
CE
t
r(Voff)
t
cross
I
RRM
90%
10%
V
RRM
I
C
t
d(off)
t
off
t
d(on)
t
on
t
f
t
r(Ion)
AM01506v1
dv/dt
GADG180720171418SA
DS10300
–
Rev 4
page 10/16
STGW25M120DF3
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
DS10300
–
Rev 4
page 11/16
STGW25M120DF3
TO-247 package information
4.1
TO-247 package information
Figure 32.
TO-247 package outline
0075325_9
DS10300
–
Rev 4
page 12/16
STGW25M120DF3
TO-247 package information
Table 7.
TO-247 package mechanical data
mm
Dim.
Min.
4.85
2.20
1.0
Typ.
Max.
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
5.60
14.80
4.30
A
A1
b
b1
b2
c
2.0
3.0
0.40
19.85
15.45
5.30
14.20
3.70
D
E
e
5.45
18.50
5.50
L
L1
L2
ØP
ØR
S
3.55
4.50
5.30
3.65
5.50
5.70
DS10300
–
Rev 4
page 13/16
STGW25M120DF3
Revision history
Table 8.
Document revision history
Date
Version
Changes
22-Apr-2014
1
Initial release.
Document status promoted from preliminary to production data. Updated all
the document accordingly.
31-Oct-2014
2
Added
Section 2.1: Electrical characteristics (curves)
.
Updated
Section 4: Package mechanical data
.
The part number STGWA25M120DF3 has been moved to a separate
datasheet, and the document has been updated accordingly.
Updated features list on cover page.
Updated
T
a
ble 1. Absolute maximum ratings
.
Minor text changes
18-Jun-2018
20-Nov-2019
3
4
Minor text changes.
DS10300
–
Rev 4
page 14/16
STGW25M120DF3
Contents
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
2
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
3
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10
Package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
TO-247 package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14
DS10300
–
Rev 4
page 15/16
STGW25M120DF3
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. All other product or service
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DS10300
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Rev 4
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