STMicroelectronics-STGW30H60DFB
| Part # | STMicroelectronics-STGW30H60DFB |
Download  | STMicroelectronics-STGW30H60DFB |
STGW30H60DFB, STGWA30H60DFB,
STGWT30H60DFB
Datasheet
Trench gate field-stop 600 V, 30 A high speed HB series IGBT
Features
•
•
•
•
•
•
•
•
•
Maximum junction temperature: T
J
= 175 °C
High speed switching series
3
3
2
2
1
1
Minimized tail current
TO-247
TO-247 long leads
Low saturation voltage: V
CE(sat)
= 1.55 V (typ.) @ I
C
= 30 A
Tight parameter distribution
TAB
Safe paralleling
3
2
1
Positive V
CE(sat)
temperature coefficient
Low thermal resistance
TO-3P
Very fast soft recovery antiparallel diode
Applications
•
•
Photovoltaic inverters
High frequency converters
Description
These devices are IGB
T
s
d
eveloped using an advanced proprietary trench gate field-
stop structure. These devices are part of the new HB series of IGB
T
s
, which
represent an optimum compromise between conduction and switching loss to
maximize the efficiency of any frequency converter. Furthermore, the slightly positive
V
CE(sat)
temperature coefficient and very tight parameter distribution result in safer
paralleling operation.
Product status link
DS10467
–
Rev 4
–
May 2019
For further information contact your local STMicroelectronics sales office.
STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB
Electrical ratings
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Collector-emitter voltage (V
= 0 V)
Value
600
60
Unit
V
V
CES
GE
Continuous collector current at T
= 25 °C
C
I
C
Continuous collector current at T
= 100 °C
30
A
V
A
C
I
CP
Pulsed collector current
Gate-emitter voltage
120
±20
±30
60
V
GE
Transient gate-emitter voltage
Continuous forward current at T
= 25 °C
C
I
F
Continuous forward current at T
= 100 °C
30
120
C
I
FP
Pulsed forward current
P
T
o
tal power dissipation at T
= 25 °C
260
W
TOT
STG
C
T
Storage temperature range
– 55 to 150
– 55 to 175
°C
T
Operating junction temperature range
J
1. Pulse
width limited by maximum junction temperature.
Table 2.
Thermal data
Symbol
Parameter
Value
0.58
2.08
50
Unit
R
thJC
Thermal resistance junction-case IGBT
Thermal resistance junction-case diode
Thermal resistance junction-ambient
R
°C/W
thJC
R
thJA
DS10467
–
Rev 4
page 2/21
STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB
Electrical characteristics
2
Electrical characteristics
T
C
= 25 °C unless otherwise specified
Table 3.
Static characteristics
Test conditions
Symbol
Parameter
Min.
Typ.
Max.
Unit
Collector-emitter breakdown
voltage
V
V
= 0
V
, I
= 2
m
A
600
V
(BR)CES
GE
C
V
V
V
= 15
V
, I
=
3
0 A
1.55
1.65
1.75
2
2
GE
GE
GE
C
Collector-emitter saturation
voltage
V
= 15
V
, I
=
3
0 A, T
= 125 °C
V
V
CE(sat)
C
J
= 15
V
, I
=
3
0 A, T
= 175 °C
C
J
I =
30 A
F
2.6
V
I =
30 A, T
= 125 °C
F J
Forward on-voltage
1.7
1.6
6
F
I =
30 A, T
= 175 °C
F
J
V
V
= V
, I
= 1 mA
Gate threshold voltage
Collector cut-off current
Gate-emitter leakage current
5
7
V
GE(th)
CE
GE
C
I
V
V
= 0
V
, V
=
6
00 V
25
µA
nA
CES
GES
GE
CE
CE
I
= 0
V
, V
=
±
20 V
±250
GE
Table 4.
Dynamic characteristics
Test conditions
Symbol
Parameter
Input capacitance
Min.
Typ.
3659
101
76
Max.
Unit
C
–
–
–
–
–
–
–
–
–
–
–
–
ies
C
oes
V
= 25
V
, f = 1
M
Hz, V
= 0 V
GE
Output capacitance
pF
CE
C
res
Reverse transfer capacitance
T
o
tal gate charge
Q
149
25
g
V
= 520
V
, I
=
3
0 A, V
= 0 to 15 V
CC
C
GE
Q
ge
Gate-emitter charge
Gate-collector charge
nC
Q
62
gc
DS10467
–
Rev 4
page 3/21
STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB
Electrical characteristics
Table 5.
IGBT switching characteristics (inductive load)
Symbol
Parameter
Turn-on delay time
Test conditions
Min.
Typ.
37
Max.
Unit
ns
t
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
d(on)
t
Current rise time
14.6
1643
146
23
r
(di/dt)
Turn-on current slope
Turn-off-delay time
Current fall time
A/µs
ns
on
V
R
= 400
V
, I
=
3
0 A, V
= 15
V
,
t
CE
C
GE
d(off)
G
t
f
E
Turn-on switching energy
Turn-off switching energy
T
o
tal switching energy
Turn-on delay time
383
293
676
35
on
E
µJ
off
E
ts
t
d(on)
ns
A/µs
ns
t
Current rise time
16.1
1496
158
65
r
(di/dt)
Turn-on current slope
Turn-off-delay time
Current fall time
on
V
= 400 V, I
= 30 A, V
= 15 V,
C GE
t
CE
d(off)
R
J
G
t
f
E
Turn-on switching energy
Turn-off switching energy
T
o
tal switching energy
794
572
1366
on
E
µJ
off
E
ts
1. Including
the reverse recovery of the diode.
2. Including
the tail of the collector current.
Table 6.
Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
53
Max.
Unit
ns
t
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Peak rate of fall of reverse
–
–
–
–
–
–
rr
Q
384
14.5
nC
A
rr
I =
30 A, V
= 400
V
, V
=
1
5
V
,
F
R
GE
I
rrm
dI /dt
rr
–
788
–
A/µs
recovery current during t
b
E
Reverse recovery energy
Reverse recovery time
–
–
–
–
104
104
1352
26
–
–
–
–
µJ
ns
nC
A
rr
t
rr
Q
Reverse recovery charge
Reverse recovery current
Peak rate of fall of reverse
rr
I =
30 A, V
= 400 V, V
= 15 V,
F
R
GE
I
rrm
di/dt = 1000 A/µs, T
= 175 °C
J
dI /dt
rr
–
–
310
407
–
–
A/µs
µJ
recovery current during t
b
E
Reverse recovery energy
rr
DS10467
–
Rev 4
page 4/21
STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1.
Power dissipation vs case temperature
Figure 2.
Collector current vs case temperature
GIPG280120141346FSR
GIPG280120141353FSR
P
tot
I
C
(W)
(A)
60
250
200
150
100
50
40
20
V
GE
≥
15
V
,
T
J
≤
175 °C
V
GE
≥
15V, T
J
≤
175 °C
0
0
0
175
25 50 75
100 125 150
0
25 50 75
100 125 150
T
C
(°C)
T
C
(°C)
Figure 3.
Output characteristics (T
J
= 25 °C)
Figure 4.
Output characteristics (T
J
= 175 °C)
GIPG280120141156FSR
GIPG280120141206FSR
I
C
(A)
I
C
(A)
V
GE
=15 V
V
GE
=13 V
V
GE
=15 V
V
GE
=13 V
100
100
V
GE
=11 V
V
GE
=11 V
80
60
40
80
60
40
V
GE
=9 V
V
GE
=9 V
20
0
20
0
V
GE
=7 V
V
CE
(V)
V
GE
=7 V
V
CE
(V)
0
1
2
3
4
5
0
1
2
3
4
5
Figure 5.
V
CE(sat)
vs junction temperature
Figure 6.
V
CE(sat)
vs collector current
GIPG280120141440FSR
GIPG280120141446FSR
V
CE(sat)
V
CE(sat)
(V)
(V)
V
GE
= 15 V
V
GE
= 15 V
2.4
2.2
I
C
= 60 A
2.2
2.0
1.8
T
J
= 175 °C
2.0
1.8
T
J
= 25 °C
I
C
= 30 A
1.6
1.6
T
J
= -40 °C
1.4
1.2
1.4
I
C
= 15 A
150
1.2
I
C
(A)
-50
0
50
100
15
30
45
60
T
J
(°C)
DS10467
–
Rev 4
page 5/21
STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB
Electrical characteristics (curves)
Figure 7.
Collector current vs switching frequency
Figure 8.
Forward bias safe operating area
GIPG090720141330FSR
GIPG280120141713FSR
I
C
(A)
I
C
(A)
V
ce(sat)
limit
80
60
40
T
C
= 80 °C
100
10 µs
10
100 µs
T
C
= 100 °C
1 ms
1
20
0
Rectangular current shape
(duty cycle = 0.5, V
CC
= 400
V
,
R
G
= 10 Ω, V
GE
= 0/15 V , T
j
= 175 °C
(single pulse
T
C
= 25°C,
T
J
≤
175
°
C; V
GE
=15V)
0.1
1
10
100
10
0
10
1
10
2
V
CE
(V)
f (kHz)
Figure 9.
Transfer characteristics
Figure 10.
Diode V
F
vs forward current
GIPG090720141349FSR
V
F
(V)
GIPG280120141330FSR
I
C
(A)
2.8
2.4
2.0
1.6
1.2
0.8
T
J
= -40°C
T
J
= 25°C
V
CE
= 6 V
100
80
T
j
= 175 °C
60
T
J
= 175°C
T
j
= 25 °C
40
20
0
60
10
20
30
40
50
I
F
(A)
5
7
9
11
V
GE
(V)
Figure 11.
Normalized V
GE(th)
vs junction temperature
Figure 12.
Normalized V
(BR)CES
vs junction temperature
AM16060v1
AM16059v2
V
GE(th)
(norm)
V
(BR)CES
(norm)
V
CE
= V
GE
, I
C
= 1 mA
I
C
= 2mA
1.1
1.0
0.9
0.8
1.0
0.9
0.7
0.6
-50
0
50
100
150
-50
0
50
100
150
T
J
(°C)
T
J
(°C)
DS10467
–
Rev 4
page 6/21
STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB
Electrical characteristics (curves)
Figure 13.
Capacitance variations
Figure 14.
Gate charge vs. gate-emitter voltage
GIPG090720141358FSR
GIPG280120141455FSR
C
(pF)
V
GE
(V)
16
V
CC
= 520 V, I
C
= 30 A
I
G
= 1mA
C
ies
14
1000
12
10
8
6
4
100
10
C
oes
2
0
C
res
0
Qg (nC)
100
80
0.1
1
10
V
CE
(V)
40
120
160
Figure 16.
Switching energy vs gate resistance
Figure 15.
Switching energy vs collector current
GIPG090720141414FSR
GIPG090720141421FSR
E
(µJ)
E
(μJ)
V
CC
= 400
V
,
I
C
= 30 A,
V
CC
= 400V, V
GE
= 15V,
R
G
= 10Ω, T
J
= 175°C
V
GE
= 15
V
, T
=
1
75 °C
J
E
on
1400
1200
1000
800
1600
E
ON
1200
E
off
800
E
OFF
400
600
400
0
0
10
20
30 40
50 60 I
C
(A)
0
10
20
30
40
R
G
(Ω)
Figure 18.
Switching energy vs collector emitter voltage
Figure 17.
Switching energy vs temperature
GIPG090720141431FSR
GIPG090720141440FSR
E
E
(μJ)
(µJ)
I
C
= 30
V
,
R
G
= 10 Ω,
V
CC
= 400V, V
GE
= 15V,
R
G
= 10Ω, I
C
= 30A
V
GE
= 15
V
,
T
J
= 175 °C
E
on
800
1000
E
ON
800
600
400
600
E
off
E
OFF
400
200
0
200
0
20
60
100
140
T
J
(°C)
100
200
300
400
500
V
CE
(V)
DS10467
–
Rev 4
page 7/21
STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB
Electrical characteristics (curves)
Figure 19.
Switching times vs collector current
Figure 20.
Switching times vs gate resistance
GIPG100720141533FSR
GIPG100720141549FSR
t
t
(ns)
(ns)
T
J
= 175°C, V
GE
= 15
V
,
R
G
= 10Ω, V
CC
= 400V
T
J
= 175°C, V
GE
= 15
V
,
I
C
= 30A, V
CC
= 400V
t
doff
t
doff
t
f
100
t
don
100
t
don
10
1
t
f
t
r
t
r
10
R
G
(Ω)
0
30
I
C
(A)
10
50
0
10
20
30
40
20
40
Figure 21.
Reverse recovery current vs diode current
slope
Figure 22.
Reverse recovery time vs diode current slope
GIPG110720140846FSR
t
rr
GIPG100720141607FSR
I
rm
(µs)
(A)
I
F
= 30A, V
r
= 400V
I
F
= 30A, V
r
= 400V
200
150
T
J
=175°C
60
40
T
J
=175°C
100
20
0
50
0
T
J
=25°C
T
J
=25°C
di/dt(A/µs)
500 1000
1500 2000
0
di/dt(A/µs)
500 1000
1500 2000 2500
0
Figure 23.
Reverse recovery charge vs diode current
slope
Figure 24.
Reverse recovery energy vs diode current
slope
GIPG110720140854FSR
Q
rr
GIPG110720140859FSR
E
rr
(nC)
(µJ)
I
F
= 30A, V
r
= 400V
I
F
= 30A, V
r
= 400V
T
J
=175°C
1000
2000
1500
T
J
800
600
400
=175°C
T
J
=25°C
1000
500
0
200
0
T
J
=25°C
di/dt(A/µs)
di/dt(A/µs)
0
500 1000
1500 2000
0
500 1000 1500 2000
DS10467
–
Rev 4
page 8/21
STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB
Electrical characteristics (curves)
Figure 25.
Thermal impedance for IGBT
ZthTO2T_B
K
10
-1
10
-2
δ=0.5
0.2
0.1
0.05
0.02
Zth=k Rthj-c
δ=tp/t
0.01
Single pulse
tp
t
10
-2
10
-5
10
-4
10
-3
10
-1
t
p
(s)
Figure 26.
Thermal impedance for diode
DS10467
–
Rev 4
page 9/21
STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB
Test circuits
3
Test circuits
Figure 27.
Test circuit for inductive load switching
Figure 28.
Gate charge test circuit
A
B
A
C
E
k
L
=
1
0
0
µ
H
k
G
B
V
CC
3
.
3
µF
1000
µF
C
k
G
D
.
U
.
T
k
R
G
E
+
k
–
k
AM01505v1
AM01504v1
Figure 30.
Diode reverse recovery waveform
Figure 29.
Switching waveform
di/dt
Q
rr
90%
10%
t
rr
V
G
I
F
t
s
t
f
90%
10%
V
CE
t
t
r(Voff)
t
cross
I
RRM
10%
90%
10%
I
RRM
I
C
t
d(off)
t
off
V
RRM
t
d(on)
t
on
t
f
t
r(Ion)
AM01506v1
dv/dt
GADG180720171418SA
DS10467
–
Rev 4
page 10/21
STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
DS10467
–
Rev 4
page 11/21
STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB
TO-247 package information
4.1
TO-247 package information
Figure 31.
TO-247 package outline
0075325_9
DS10467
–
Rev 4
page 12/21
STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB
TO-247 package information
Table 7.
TO-247 package mechanical data
mm
Dim.
Min.
4.85
2.20
1.0
Typ.
Max.
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
5.60
14.80
4.30
A
A1
b
b1
b2
c
2.0
3.0
0.40
19.85
15.45
5.30
14.20
3.70
D
E
e
5.45
18.50
5.50
L
L1
L2
ØP
ØR
S
3.55
4.50
5.30
3.65
5.50
5.70
DS10467
–
Rev 4
page 13/21
STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB
TO-247 long leads package information
4.2
TO-247 long leads package information
Figure 32.
TO-247 long leads package outline
8463846_2_F
DS10467
–
Rev 4
page 14/21
STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB
TO-247 long leads package information
Table 8.
TO-247 long leads package mechanical data
mm
Dim.
Min.
4.90
2.31
1.90
1.16
Typ.
5.00
2.41
2.00
Max.
5.10
2.51
2.10
1.26
3.25
2.25
0.66
21.10
15.90
5.10
2.60
5.54
20.10
4.30
3.70
6.00
6.25
A
A1
A2
b
b2
b3
c
0.59
20.90
15.70
4.90
D
21.00
15.80
5.00
E
E2
E3
e
2.40
2.50
5.34
5.44
L
19.80
19.92
L1
P
3.50
5.60
6.05
3.60
6.15
Q
S
DS10467
–
Rev 4
page 15/21
STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB
TO-3P package information
4.3
TO-3P package information
Figure 33.
TO-3P package outline
8045950_3
DS10467
–
Rev 4
page 16/21
STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB
TO-3P package information
Table 9.
TO-3P package mechanical data
mm
Dim.
Min.
4.60
1.45
1.20
0.80
1.80
2.80
0.55
19.70
13.70
15.40
13.40
9.40
5.15
19.80
3.30
18.20
3.30
3.10
4.80
3.60
Typ.
4.80
1.50
1.40
1.00
2.00
3.00
0.60
19.90
13.90
15.60
13.60
9.60
5.45
20.00
3.50
18.40
3.40
3.20
5.00
3.80
Max.
5.00
1.65
1.60
1.20
2.20
3.20
0.75
20.10
14.10
15.80
13.80
9.90
5.75
20.20
3.70
18.60
3.50
3.30
5.20
4.00
A
A1
A2
b
b1
b2
c
D
D1
E
E1
E2
e
L
L1
L2
ØP
ØP1
Q
Q1
DS10467
–
Rev 4
page 17/21
STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB
Ordering information
5
Ordering information
Table 10.
Order codes
Order code
Marking
Package
TO-247
Packing
STGW30H60DFB
STGWA30H60DFB
STGWT30H60DFB
GW30H60DFB
GWA30H60DFB
GWT30H60DFB
TO-247 long leads
TO-3P
Tube
DS10467
–
Rev 4
page 18/21
STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB
Revision history
Table 11.
Document revision history
Date
Revision
Changes
01-Aug-2014
1
Initial version.
Modified:
Table 2, Table 4
and
6
Modified:
Figure 16
17-Feb-2016
2
Updated:
Section 3
Updated:
Section 4.1: TO-247, STGW30H60DFB
Minor text changes
Added device in TO-247 long leads.
Document updated accordingly.
Minor text changes.
04-Nov-2016
10-May-2019
3
4
Minor text changes.
DS10467
–
Rev 4
page 19/21
STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB
Contents
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
2
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
3
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10
Package mechanical dat
a
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
TO-247 package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
TO-247 long leads package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
13
TO-3P package informatio
n
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
15
Ordering information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
18
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
19
DS10467
–
Rev 4
page 20/21
STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST
products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST
products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of S
T
.
F
or additional information about ST trademarks, please refer to
www.st.com/trademarks
. All other product or service
names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2019 STMicroelectronics – All rights reserved
DS10467
–
Rev 4
page 21/21
