STMicroelectronics-STGW30NC60KD
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STGW30NC60KD
30 A – 600 V – short circuit rugged IGBT
Features
■
Low on-voltage drop (V
)
CE(sat)
■
Low C
/ C
ratio (no cross conduction
res
ies
susceptibility)
■
Short circuit withstand time 10 µs
■
IGBT co-packaged with ultra fast free-wheeling
diode
3
2
1
Applications
TO-247
■
High frequency inverters
■
Motor drivers
Description
Figure 1.
Internal schematic diagram
This IGBT utilizes the advanced PowerMESH™
process resulting in an excellent trade-off
between switching performance and low on-state
behavior.
Table 1.
Order code
STGW30NC60KD
Device summary
Marking
Package
TO-247
Packaging
GW30NC60KD
T
u
be
March 2008
Rev 2
1/14
14
Contents
STGW30NC60KD
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Test circuit
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14
STGW30NC60KD
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
V
CES
Collector-emitter voltage (V
GE
= 0)
Collector current (continuous) at T
C
= 25 °C
Collector current (continuous) at T
C
= 100 °C
T
u
rn-off latching current
600
60
V
A
A
A
A
V
A
(1)
I
C
(1)
I
C
28
(2)
I
CL
125
125
20
(3)
I
CP
Pulsed collector current
V
GE
I
F
Gate-emitter voltage
Diode RMS forward current at T
C
= 25 °C
30
Surge non repetitive forward current t
p
= 10 ms
sinusoidal
I
FSM
P
TOT
t
scw
T
j
120
200
A
T
o
tal dissipation at T
C
= 25 °C
W
µs
°C
Short circuit withstand time, V
CE
= 0.5 V
(BR)CES
10
T
j
= 125°C, R
G
= 10
Ω
,
V
GE
= 12 V
Operating junction temperature
– 55 to 150
1. Calculated
according to the iterative formula:
T
J
(
MAX
)
–
T
c
I
c
(
T
c
)
=
–
————————————————————————————
R
thj
–
c
×
V
CE
(
sat
)(
MAX
)
⋅ (
T
c
,
I
c
)
2. V
clamp
= 80%,(V
CES
), T
j
=150°C, R
G
= 10
Ω
, V
GE
= 15 V
3. Pulse
width limited by max. junction temperature allowed
Table 3.
Symbol
Thermal resistance
Parameter
Value
Unit
Thermal resistance junction-case IGBT max.
Thermal resistance junction-case diode max.
0.625
1.5
°C/W
°C/W
°C/W
R
thj-case
R
thj-amb
Thermal resistance junction-ambient max
50
3/14
Electrical characteristics
STGW30NC60KD
2
Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 4.
Symbol
Static
Parameter
Test conditions
I
C
= 1 mA
Min. Typ. Max.
Unit
Collector-emitter breakdown
voltage (V
GE
= 0)
V
(BR)CES
600
V
V
V
GE
= 15
V
,
I
C
= 20 A
V
GE
= 15
V
,
I
C
= 20 A,
T
C
= 125 °C
2.1
1.9
2.7
Collector-emitter saturation
voltage
V
CE(sat)
V
Collector cut-off current
(V
GE
= 0)
V
CE
= 600 V
150 µA
I
CES
V
GE(th)
I
GES
V
CE
= 600
V
,
T
C
= 125 °C
1
mA
Gate threshold voltage
V
CE
= V
GE
, I
C
= 250 µA
V
GE
= 20
V
4.5
6.5
V
Gate-emitter cut-off
current (V
CE
= 0)
100 nA
S
(1)
Forward transconductance
V
CE
= 15 V
,
I
C
= 20 A
15
g
fs
1. Pulsed:
Pulse duration = 300 µs, duty cycle 1.5%
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
Input capacitance
C
ies
C
oes
C
res
2170
230
46
pF
pF
pF
Output capacitance
V
CE
= 25
V
, f = 1
M
Hz, V
GE
= 0
Reverse transfer
capacitance
Q
g
Q
ge
Q
gc
T
o
tal gate charge
V
CE
= 480
V
,
I
C
= 20 A,
V
GE
= 15 V
96
18
46
nC
nC
nC
Gate-emitter charge
Gate-collector charge
4/14
STGW30NC60KD
Electrical characteristics
Min. Typ. Max
Unit
Table 6.
Switching on/off (inductive load)
Parameter Test
conditions
T
u
rn-on delay time
Current rise time
(di/dt)
on
T
u
rn-on current slope
Symbol
t
d(on)
t
r
V
CC
= 480
V
,
I
C
= 20 A
R
G
=10
Ω
, V
GE
= 15
V
,
29
12
ns
ns
1520
A/µs
t
d(on)
t
r
T
u
rn-on delay time
Current rise time
V
CC
= 480
V
,
I
C
= 20 A
R
G
=10
Ω
, V
GE
= 15
V
,
27
14
ns
ns
(di/dt)
on
T
u
rn-on current slope
1360
A/µs
t
r
(V
off
) Off
voltage rise time
V
CC
= 480
V
,
I
C
= 20 A
R
G
=10
Ω
, V
GE
= 15
V
,
36
120
85
ns
ns
ns
t
d
(
off
t
f
)
T
u
rn-off delay time
Current fall time
V
cc
= 480
V
,
I
C
= 20 A,
R
G
= 10
Ω
, V
GE
= 15 V
T
C
= 125 °C
t
r
(V
off
) Off
voltage rise time
75
ns
ns
ns
t
d
(
off
t
f
)
T
u
rn-off delay time
Current fall time
160
130
Table 7.
Symbol
Switching energy (inductive load)
Parameter
Test conditions
Min Typ.
Max Unit
Eon
T
u
rn-on switching losses
T
u
rn-off switching losses
T
o
tal switching losses
V
CC
= 480
V
,
I
C
= 20 A
R
G
= 10
Ω
, V
GE
= 15
V
,
350
435
785
µJ
µJ
µJ
(1)
E
off
E
ts
V
CC
= 480
V
,
I
C
= 20 A
R
G
= 10
Ω
, V
GE
= 15
V
,
T
C
= 125 °C
Eon
T
u
rn-on switching losses
T
u
rn-off switching losses
T
o
tal switching losses
590
845
µJ
µJ
µJ
(1)
E
off
E
ts
1435
1. Turn-off
losses include also the tail of the collector current.
5/14
Electrical characteristics
STGW30NC60KD
Table 8.
Symbol
Collector-emitter diode
Parameter
Test conditions
I
F
= 20 A
Min. Typ.
Max. Unit
2.6
1.6
3.1
V
V
V
F
Forward on-voltage
I
F
= 20 A, T
C
= 125 °C
t
rr
I
F
= 20 A,V
R
= 50
V
,
Reverse recovery time
Reverse recovery charge
Reverse recovery current
40
50
ns
nC
A
Q
rr
I
rrm
di/dt = 100 A/
µ
s
2.5
t
rr
I
F
= 20 A,V
R
= 50
V
,
T
C
=125 °C, di/dt = 100 A/
µ
s
Reverse recovery time
Reverse recovery charge
Reverse recovery current
80
180
4.5
ns
nC
A
Q
rr
I
rrm
6/14
STGW30NC60KD
Electrical characteristics
2.1
Electrical characteristics (curves)
Figure 2.
Output characteristics
Figure 3.
Transfer characteristics
Figure 4.
Transconductance
Figure 5.
Collector-emitter on voltage vs
temperature
Figure 6.
Gate charge vs gate-source voltage
Figure 7.
Capacitance variations
7/14
Electrical characteristics
STGW30NC60KD
Figure 8.
Normalized gate threshold voltage
Figure 9.
Collector-emitter on voltage vs
vs temperature
collector current
V
GE(th)
(norm.)
1.05
I
C
= 250 µA
0.95
0.85
0.75
T
C
(°C)
125
-75
-25
25
75
Figure 10.
Normalized breakdown voltage vs
temperature
Figure 11.
Switching losses vs temperature
V
(BR)CES
(norm.)
I
C
= 1 mA
1.05
1.00
0.95
0.90
T
C
(°C)
-75
-25
25
75
125
Figure 12.
Switching losses vs gate resistance
Figure 13.
Switching losses vs collector
current
8/14
STGW30NC60KD
Electrical characteristics
Figure 14.
Thermal Impedance
Figure 15.
T
u
rn-off SOA
Figure 16.
Forward voltage drop versus
forward current
IFM(A)
120
110
Tj=125˚C
(Maximum values)
100
90
80
Tj=125˚C
(
T
y
pical values)
70
60
Tj=25˚C
50
40
30
20
10
0
(Maximum values)
VFM(V)
0
1
2
3
4
5
6
9/14
Test circuit
STGW30NC60KD
3
Test circuit
Figure 17.
Test circuit for inductive load
switching
Figure 18.
Gate charge test circuit
Figure 19.
Switching waveforms
Figure 20.
Diode recovery times waveform
10/14
STGW30NC60KD
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECO
P
A
CK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECO
P
ACK is an ST trademark.
11/14
Package mechanical data
STGW30NC60KD
TO-247 Mechanical data
mm.
Typ
Dim.
Min.
Max.
A
A1
b
4.
8
5
5.15
2.20
1.0
2.60
1.40
2.40
3
.40
b
1
b
2
c
2.0
3
.0
0.40
1
9
.
8
5
15.45
0.
8
0
D
20.15
15.75
E
e
5.45
1
8
.50
5.50
L
14.20
14.
8
0
4.
3
0
L1
L2
øP
øR
S
3
.70
3
.55
3
.65
4.50
5.50
12/14
STGW30NC60KD
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