STMicroelectronics-STGW30NC60WD
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STGW30NC60WD
30 A, 600 V ultra
fast IGBT
Features
■
High frequency operation
■
Lower C
/ C
ratio (no cross-conduction
IES
RES
susceptibility)
■
Very soft ultra fast recovery antiparallel diode
Applications
3
2
1
■
High frequency motor controls, inverters, UPS
TO-247
■
HF, SMPS and PFC in both hard switch and
resonant topologies
Description
This IGBT utilizes the advanced Power MESH™
process resulting in an excellent trade-off
between switching performance and low on-state
behavior.
Figure 1.
Internal schematic diagram
Table 1.
Order code
STGW30NC60WD
Device summary
Marking
Package
TO-247
Packaging
GW30NC60WD
T
u
be
November 2008
Rev 5
1/14
14
Contents
STGW30NC60WD
Contents
1
2
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7
3
4
5
Test circuit
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14
STGW30NC60WD
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
V
V
CES
Collector-emitter voltage (V
GE
= 0)
Collector current (continuous) at 25 °C
Collector current (continuous) at 100 °C
Collector current (pulsed)
600
60
(1)
A
I
C
(1)
30
A
I
C
(2)
150
A
I
CP
(3)
T
u
rn-off latching current
150
20
A
V
I
CL
V
GE
I
F
Gate-emitter voltage
Diode RMS forward current at T
C
= 25 °C
Surge not repetitive forward current t
p
= 10 ms sinusoidal
T
o
tal dissipation at T
C
= 25 °C
30
A
I
FSM
P
TOT
T
stg
T
j
120
200
A
W
Storage temperature
– 55 to 150
°C
Operating junction temperature
1. Calculated
according to the iterative formula:
T
j
(
max
)
–
T
C
I
C
(
T
C
)
=
–
——————————————————————————————————-
–
–
R
thj
–
c
×
V
CE
(
sat
)(
max
)
(
T
j
(
max
)
,
I
C
(
T
C
))
2.
Pulse width limited by max junction temperature
3. V
CLAMP
= 80% (V
CES
), V
GE
= 15 V, R
G
= 10
Ω
, T
J
= 150 °C
Table 3.
Symbol
Thermal resistance
Parameter
Value
Unit
Thermal resistance junction-case IGBT max.
Thermal resistance junction-case diode max.
Thermal resistance junction-ambient max.
0.63
1.5
50
°C/W
°C/W
°C/W
R
thj-case
R
thj-amb
3/14
Electrical characteristics
STGW30NC60WD
2
Electrical characteristics
(T
= 25 °C unless otherwise specified)
CASE
Table 4.
Symbol
Static electrical characteristics
Parameter
Test conditions
Min. Typ. Max. Unit
Collector-emitter
breakdown voltage
V
(BR)CES
I
C
= 1 mA
600
V
(V
GE
= 0)
V
GE
= 15
V
,
I
C
= 20 A
2.1
1.8
2.5
V
V
Collector-emitter saturation
voltage
V
CE(sat)
V
GE(th)
I
CES
V
GE
= 15
V
,
I
C
= 20 A,T
C
= 125 °C
V
CE
= V
GE
, I
C
= 250µA
Gate threshold voltage
3.75
5.75
V
V
CE
= 600 V
250
1
µA
Collector cut-off current
(V
GE
= 0)
V
CE
= 600
V
,
T
C
= 125 °C
mA
Gate-emitter leakage
current (V
CE
= 0)
I
GES
g
fs
V
GE
= 20
V
100 nA
S
V
CE
= 15 V I
= 20 A
Forward transconductance
15
, C
Table 5.
Symbol
Dynamic electrical characteristics
Parameter
Test conditions
Min. Typ. Max. Unit
Input capacitance
C
ies
C
oes
C
res
2080
175
52
pF
pF
pF
V
CE
= 25
V
, f = 1
M
Hz,
GE
= 0
Output capacitance
V
Reverse transfer
capacitance
Q
g
Q
ge
Q
gc
V
CE
= 390
V
,
I
C
= 20 A,
V
GE
= 15
V
,
T
o
tal gate charge
102 140
17.5
nC
nC
nC
Gate-emitter charge
Gate-collector charge
47
(see Figure 18)
4/14
STGW30NC60WD
Electrical characteristics
Min. Typ. Max.
Unit
Table 6.
Switching on/off (inductive load)
Symbol
Parameter
Test conditions
t
d(on)
t
r
V
CC
= 390
V
,
I
C
= 20 A
R
G
= 10
Ω
, V
GE
= 15
V
,
(see Figure 17)
T
u
rn-on delay time
Current rise time
29.5
12
ns
ns
T
u
rn-on current slope
1640
A/µs
(di/dt)
on
t
d(on)
t
r
V
CC
= 390
V
,
I
C
= 20 A
R
G
= 10
Ω
, V
GE
= 15
V
,
T
C
= 125 °C
(see Figure 17)
T
u
rn-on delay time
Current rise time
29
ns
ns
13.5
1600
T
u
rn-on current slope
A/µs
(di/dt)
on
t
r
(V
off
)
V
CC
= 390
V
,
I
C
= 20 A,
R
GE
= 10
Ω
, V
GE
= 15 V
(see Figure 17)
Off voltage rise time
T
u
rn-off delay time
Current fall time
19.5
118
27
ns
ns
ns
t
d
(
off
t
f
)
V
CC
= 390
V
,
I
C
= 20 A,
R
GE
= 10
Ω
, V
GE
=15
V
,
T
C
= 125 °C
t
r
(V
off
)
t
d
(
off
t
f
Off voltage rise time
T
u
rn-off delay time
Current fall time
46
151
38
ns
ns
ns
)
(see Figure 17)
Table 7.
Symbol
Switching energy (inductive load)
Parameter
Test conditions
Min. Typ.
Max. Unit
(1)
V
CC
= 390
V
,
I
C
= 20 A
R
G
= 10
Ω
, V
GE
= 15
V
,
(see Figure 19)
E
on
T
u
rn-on switching losses
T
u
rn-off switching losses
T
o
tal switching losses
305
181
486
µJ
µJ
µJ
E
off
E
ts
(1)
E
on
V
CC
= 390
V
,
I
C
= 20 A
R
G
= 10
Ω
, V
GE
= 15
V
,
T
C
= 125°C
(see Figure 19)
T
u
rn-on switching losses
T
u
rn-off switching losses
T
o
tal switching losses
455
355
810
µJ
µJ
µJ
E
off
E
ts
1. Eon
is the tun-on losses when a typical diode is used in the test circuit in
Figure 19
. If the IGBT is offered
in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25°C and 125°C). Eon include diode recovery energy.
5/14
Electrical characteristics
STGW30NC60WD
Table 8.
Symbol
Collector-emitter diode
Parameter
Test conditions
I
F
= 20 A
Min. Typ.
Max. Unit
2.6
1.6
V
V
V
F
Forward on-voltage
I
F
= 20 A, T
C
= 125 °C
t
rr
I
F
= 20 A,V
R
= 50
V
,
Reverse recovery time
Reverse recovery charge
Reverse recovery current
40
50
ns
nC
A
Q
rr
I
rrm
di/dt = 100 A/
µ
s
(see Figure 20)
2.5
I
F
= 20 A,V
R
= 50
V
,
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
80
180
4.5
ns
nC
A
T
C
=125 °C, di/dt = 100
A/
µ
s
(see Figure 20)
Q
rr
I
rrm
6/14
STGW30NC60WD
Electrical characteristics
2.1
Electrical characteristics (curves)
Figure 2.
Output characteristics
Figure 3.
Transfer characteristics
Figure 4.
Transconductance
Figure 5.
Collector-emitter on voltage vs
temperature
HV2
8
940
V
CE
(V)
3
.2
3
V
GE
=15V
40A
3
0A
2.
8
2.6
2.4
2.2
2
20A
1.
8
1.6
1.4
I
C
=10A
-75 -50 -25
0
25
50
75 100
125 150
T
J
(°C)
Figure 6.
Gate charge vs gate-source voltage
Figure 7.
Capacitance variations
7/14
Electrical characteristics
STGW30NC60WD
Figure 8.
Normalized gate threshold voltage
Figure 9.
Collector-emitter on voltage vs
vs temperature
collector current
HV2
8
950
V
CE(
sa
t)
(V)
3
.2
3
T
J
=-50°C
2.
8
2.6
2.4
2.2
2
T
J
=25°C
T
J
=150°C
1.
8
1.6
1.4
1.2
1
0.
8
0
5
10 15 20 25
3
0
3
5 40 45 50 55 60
I
C
(A)
Figure 10.
Normalized breakdown voltage vs
temperature
Figure 11.
Switching losses vs temperature
Figure 12.
Switching losses vs gate resistance
Figure 13.
Switching losses vs collector
current
8/14
STGW30NC60WD
Electrical characteristics
Figure 14.
Thermal impedance
Figure 15.
T
u
rn-off SOA
Figure 16.
Emitter-collector diode
characteristics
IFM(A)
120
110
Tj=125˚C
(Maximum values)
100
90
80
Tj=125˚C
(
T
y
pical values)
70
60
50
40
30
20
Tj=25˚C
(Maximum values)
10
VFM(V)
0
0
1
2
3
4
5
6
9/14
Test circuit
STGW30NC60WD
3
Test circuit
Figure 17.
Test circuit for inductive load
switching
Figure 18.
Gate charge test circuit
AM01504v1
AM01505v1
Figure 19.
Switching waveform
Figure 20.
Diode recovery time waveform
Q
rr
90
%
di/dt
10
%
V
G
I
F
t
rr
90
%
10
%
t
a
t
b
V
CE
T
r
(Voff)
Tcro
ss
t
90
%
I
RRM
I
RRM
10
%
I
C
Td(off)
T
o
ff
Td(on)
T
o
n
Tf
T
r
(Ion)
V
F
di/dt
AM01506v1
AM01507v1
10/14
STGW30NC60WD
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECO
P
A
CK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECO
P
ACK is an ST trademark.
11/14
Package mechanical data
STGW30NC60WD
TO-247 Mechanical data
mm.
Typ
Dim.
Min.
Max.
A
A1
b
4.
8
5
5.15
2.20
1.0
2.60
1.40
2.40
3
.40
b
1
b
2
c
2.0
3
.0
0.40
1
9
.
8
5
15.45
0.
8
0
D
20.15
15.75
E
e
5.45
1
8
.50
5.50
L
14.20
14.
8
0
4.
3
0
L1
L2
øP
øR
S
3
.70
3
.55
3
.65
4.50
5.50
12/14
STGW30NC60WD
Revision history
5
Revision history
Table 9.
Date
Document revision history
Revision
Changes
21-Nov-2005
29-Nov-2005
06-Mar-2006
12-Jul-2007
11-Nov-2008
1
2
3
4
5
Initial release.
Modified
Figure 5
and
Figure 6
New template
Corrected
Figure 11
,
Figure 12
,
Figure 13
Figure 16
has been updated.
13/14
STGW30NC60WD
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