STMicroelectronics-STGW40M120DF3
| Part # | STMicroelectronics-STGW40M120DF3 |
Download  | STMicroelectronics-STGW40M120DF3 |
STGW40M120DF3
STGWA40M120DF3
Trench gate field-stop IGB
T
, M
s
eries
1200
V
,
4
0 A low loss
Datasheet
–
production data
Features
•
10 µs of short-circuit withstand time
•
V
CE(sat)
= 1.85 V (typ.) @ I
C
= 40 A
•
Tight parameters distribution
•
Safer paralleling
•
Low thermal resistance
ꢂ
•
Soft and fast recovery antiparallel diode
ꢁ
ꢀ
Applications
72ꢀꢁꢂꢃ
72ꢀꢁꢂꢃꢄORQJꢄOHDGV
•
Industrial drives
•
UPS
•
Solar
Figure 1.Internal schematic diagram
•
Welding
&ꢃꢄꢁꢃRUꢃ7$%ꢅ
Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the M series of
IGB
T
s
, which represent an optimum compromise
in performance to maximize the efficiency of
inverter systems where low-loss and short circuit
capability are essential. Furthermore, a positive
*ꢃꢄꢀꢅ
V
CE(sat)
temperature coefficient and tight
parameter distribution result in safer paralleling
operation.
(ꢃꢄꢂꢅ
Table 1. Device summary
Order code
Marking
Package
Packaging
STGW40M120DF3
STGWA40M120DF3
G40M120DF3
G40M120DF3
TO-247
Tube
Tube
TO-247 long leads
November 2014
DocID026224 Rev 3
1/18
This is information on a product in full production.
18
Contents
STGW40M120DF3, STGWA40M120DF3
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2/18
DocID026224 Rev 3
STGW40M120DF3, STGWA40M120DF3
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
V
CES
I
C
Collector-emitter voltage (V
GE
= 0)
Continuous collector current at T
C
= 25 °C
Continuous collector current at T
C
= 100 °C
Pulsed collector current
1200
80
V
A
I
C
40
A
(1)
I
CP
160
A
V
GE
I
F
Gate-emitter voltage
±20
V
Continuous forward current at T
C
= 25 °C
Continuous forward current at T
C
= 100 °C
Pulsed forward current
80
A
I
F
40
A
(1)
I
FP
160
A
P
TOT
T
STG
T
J
T
o
tal dissipation at T
C
= 25 °C
Storage temperature range
468
W
°C
°C
– 55 to 150
– 55 to 175
Operating junction temperature
1. Pulse
width limited by maximum junction temperature.
Table 3. Thermal data
Parameter
Symbol
Value
Unit
R
thJC
R
thJC
R
thJA
Thermal resistance junction-case IGBT
Thermal resistance junction-case diode
Thermal resistance junction-ambient
0.32
0.74
50
°C/W
°C/W
°C/W
DocID026224 Rev 3
3/18
Electrical characteristics
STGW40M120DF3, STGWA40M120DF3
2
Electrical characteristics
T
J
= 25 °C unless otherwise specified.
Table 4. Static characteristics
Test conditions
Symbol
Parameter
Min. Typ. Max. Unit
Collector-emitter
V
(BR)CES
breakdown voltage
(V
GE
= 0)
I
C
= 2 mA
1200
V
V
GE
= 15
V
,
I
C
= 40 A
1.85
2.2
2.3
V
GE
= 15
V
,
I
C
= 40 A,
T
J
= 125 °C
Collector-emitter saturation
voltage
V
CE(sat)
V
V
GE
= 15
V
,
I
C
= 40 A
T
J
= 175 °C
2.3
I
F
= 40 A
2.85 3.95
2.25
V
V
V
V
V
F
Forward on-voltage
I
F
= 40 A T
J
= 125 °C
I
F
= 40 A T
J
= 175 °C
V
CE
= V
GE
, I
C
= 2 mA
2.1
V
GE(th)
Gate threshold voltage
5
6
7
Collector cut-off current
(V
GE
= 0)
I
CES
V
CE
= 1200 V
V
GE
= ± 20 V
25
µA
nA
Gate-emitter leakage
I
GES
250
current (V
CE
= 0)
Table 5. Dynamic characteristics
Test conditions
Symbol
Parameter
Min. Typ.
Max. Unit
C
ies
Input capacitance
–
–
2500
275
–
–
pF
pF
C
oes
Output capacitance
V
V
CE
= 25
V
, f = 1 MHz,
GE
= 0
Reverse transfer
capacitance
C
res
–
95
–
pF
Q
g
Q
ge
Q
gc
T
o
tal gate charge
–
–
–
125
15
–
–
–
nC
nC
nC
V
CC
= 960
V
, I
C
=40 A,
Gate-emitter charge
Gate-collector charge
V
75
4/18
DocID026224 Rev 3
STGW40M120DF3, STGWA40M120DF3
Electrical characteristics
Table 6. IGBT switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min. Typ. Max.
Unit
t
d(on)
t
r
Turn-on delay time
Current rise time
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
35
15
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
ns
ns
(di/dt)
on
Turn-on current slope
2100
140
135
1.5
A/µs
ns
V
CE
= 600 V, I
C
= 40 A,
V
GE
= 15 V
,
R
G
= 10
Ω
t
d(off)
t
f
Turn-off delay time
Current fall time
ns
(1)
E
on
Turn-on switching losses
Turn-off switching losses
T
o
tal switching losses
Turn-on delay time
Current rise time
mJ
mJ
mJ
ns
(2)
E
off
2.25
3.75
35
E
ts
t
d(on)
t
r
18
ns
(di/dt)
on
Turn-on current slope
1800
150
240
2.8
A/µs
ns
V
CE
= 600 V, I
C
= 40 A,
t
d(off)
t
f
Turn-off delay time
R
G
= 10
Ω
, V
GE
= 15 V
,
Current fall time
ns
J
(1)
E
on
Turn-on switching losses
Turn-off switching losses
T
o
tal switching losses
mJ
mJ
mJ
(2)
E
off
3.45
6.25
E
ts
t
sc
V
CC
≤
600V, V
GE
= 15V,
T
Jstart
= 150°C
Short-circuit withstand time
10
–
µs
1. Energy
losses include reverse recovery of the diode.
2. Turn-off
losses include also the tail of the collector current.
Table 7. Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min. Typ.
Max. Unit
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
–
–
–
355
2575
25
–
–
–
ns
nC
A
Q
rr
I
rrm
I
F
= 40 A, V
R
= 600
V
,
V
Peak rate of fall of reverse
recovery current during t
b
di/dt = 1000 A/µs
dI
rr/
/dt
–
1110
–
A/µs
E
rr
t
rr
Reverse recovery energy
Reverse recovery time
Reverse recovery charge
Reverse recovery current
–
–
–
–
1.12
667
8500
37
–
–
–
–
mJ
ns
nC
A
Q
rr
I
rrm
I
F
= 40 A, V
R
= 600
V
,
V
GE
= 15
V
,
T
J
= 175 °C,
Peak rate of fall of reverse
recovery current during t
b
dI
rr/
/dt
E
rr
–
–
450
3.9
–
–
A/µs
mJ
di/dt = 1000 A/µs
Reverse recovery energy
DocID026224 Rev 3
5/18
Electrical characteristics
STGW40M120DF3, STGWA40M120DF3
2.1
Electrical characteristics (curves)
Figure 2. Power dissipation vs. case
temperature
Figure 3. Collector current vs. case temperature
*,3’ꢀꢇꢇꢋꢁꢇꢀꢉꢀꢌꢉꢀ)65
*,3’ꢀꢇꢇꢋꢁꢇꢀꢉꢀꢌꢆꢁ)65
,
&
3
WRW
ꢄ:ꢅ
ꢄ$ꢅ
ꢍꢇ
ꢉꢆꢇ
9
*(
ꢃ
ꢃ
ꢀꢆ
9
ꢊ
ꢃ
7
–
ꢃ
ꢃꢀꢈꢆꢃ&
9
*(
ꢃ
ꢃꢀꢆ
9
ꢊ
ꢃ
7
–
ꢃ
ꢃꢀꢈꢆꢃ&
ꢉꢇꢇ
ꢂꢆꢇ
ꢈꢇ
ꢌꢇ
ꢂꢇꢇ
ꢁꢆꢇ
ꢁꢇꢇ
ꢀꢆꢇ
ꢆꢇ
ꢉꢇ
ꢂꢇ
ꢁꢇ
ꢀꢇꢇ
ꢆꢇ
ꢇ
ꢀꢇ
ꢇ
ꢇ
ꢁꢆ
ꢆꢇ
ꢈꢆ
ꢀꢇꢇ
ꢀꢁꢆ
ꢀꢆꢇ
ꢀꢈꢆ
ꢇ
ꢁꢆ
ꢆꢇ
ꢈꢆ
ꢀꢇꢇ
ꢀꢁꢆ
ꢀꢆꢇ
ꢀꢈꢆ
7
&
ꢄ&ꢅ
7
&
ꢄ&ꢅ
Figure 4. Output characteristics (T
J
= 25°C)
Figure 5. Output characteristics (T
J
= 175°C)
*,3’ꢀꢇꢇꢋꢁꢇꢀꢉꢀꢌꢆꢌ)65
*,3’ꢀꢇꢇꢋꢁꢇꢀꢉꢀꢈꢇꢂ)65
,
&
,
&
ꢄ$ꢅ
ꢄ$ꢅ
9
*(
ꢀꢆ9
ꢀꢂ9
9
*(
ꢀꢆ9
ꢀꢉꢇ
ꢀꢉꢇ
ꢀꢁꢇ
ꢀꢁꢇ
ꢀꢀ9
ꢀꢂ9
ꢀꢇꢇ
ꢍꢇ
ꢀꢇꢇ
ꢍꢇ
ꢀꢀ9
ꢌꢇ
ꢌꢇ
ꢉꢇ
ꢋ9
ꢉꢇ
ꢋ9
ꢈ9
ꢁꢇ
ꢇ
ꢁꢇ
ꢇ
ꢁ
ꢉ
ꢆ
ꢁ
ꢉ
ꢆ
ꢇ
ꢀ
ꢂ
9
&(
ꢄ9ꢅ
ꢇ
ꢀ
ꢂ
9
&(
ꢄ9ꢅ
Figure 6. V
CE(sat)
vs. junction temperature
Figure 7. V
CE(sat)
vs. collector current
*,3’ꢀꢀꢇꢋꢁꢇꢀꢉꢀꢇꢇꢇ)65
9
&(ꢄVDWꢅ
*,3’ꢀꢀꢇꢋꢁꢇꢀꢉꢀꢇꢇꢍ)65
9
&(ꢄVDWꢅ
ꢄ9ꢅ
ꢄ9ꢅ
,
&
ꢃꢍꢇ$
ꢂꢎꢌ
9
*(
ꢃꢀꢆ9
9
*(
ꢃꢀꢆ9
7
–
ꢃꢀꢈꢆ&
ꢂꢎꢁ
ꢁꢎꢍ
ꢁꢎꢉ
ꢁꢎꢇ
ꢀꢎꢌ
ꢀꢎꢁ
ꢇꢎꢍ
ꢂꢎꢁ
7
–
ꢃꢁꢆ&
ꢁꢎꢍ
,
&
ꢃꢉꢇ$
ꢁꢎꢉ
7
–
ꢃꢏꢉꢇ&
ꢁꢎꢇ
,
&
ꢃꢁꢇ$
ꢀꢎꢌ
ꢀꢎꢁ
ꢀꢇ
ꢁꢇ
ꢂꢇ
ꢉꢇ
ꢆꢇ
ꢌꢇ
ꢈꢇ
ꢏꢆꢇ
ꢇ
ꢆꢇ
ꢀꢇꢇ
ꢀꢆꢇ
7
–
ꢄ&ꢅ
,
&
ꢄ$ꢅ
6/18
DocID026224 Rev 3
STGW40M120DF3, STGWA40M120DF3
Electrical characteristics
Figure 8. Collector current vs. switching
frequency
Figure 9. Forward bias safe operating area
*,3’ꢀꢀꢇꢋꢁꢇꢀꢉꢀꢇꢂꢁ)65
,
&
*,3’ꢀꢀꢇꢋꢁꢇꢀꢉꢀꢇꢁꢉ)65
,Fꢃꢄ$ꢅ
ꢄ$ꢅ
ꢀꢇꢇ
ꢍꢇ
7
F
ꢍꢇ
&
ꢀꢇꢇ
ꢀV
7
F
ꢀꢇꢇ
&
ꢌꢇ
ꢀꢇV
ꢀꢇ
ꢉꢇ
ꢁꢇ
ꢇ
ꢀꢇꢇV
UHFWDQJXODUꢃFXUUHQWꢃVKDSHꢊ
ꢄGXWꢃFFOH ꢇꢎꢆꢊꢃ9
ꢃꢌꢇꢇ
9
ꢊ
ꢃ
5
*
ꢀꢇ
6LQJOHꢃSXOVHꢃ7
&
ꢃ ꢃꢁꢆꢃ
&
ꢀPV
ꢊ
&&
9
*(
ꢃ
ꢃꢀꢆ
9
ꢊ
ꢃ
7
–
ꢃ
ꢃꢀꢈꢆꢃ&
9
ꢃꢇꢐꢀꢆꢃ
9
ꢊ
ꢃ7
–
ꢀꢈꢆ&ꢅ
*(
ꢀ
Iꢃ>N+]@ꢃ
ꢀ
ꢀꢇ
ꢀꢇꢇ
ꢀꢇꢇꢇ
9
&(
ꢄ9ꢅ
ꢀ
ꢀꢇ
Figure 10. Transfer characteristics
Figure 11. Diode V
F
vs. forward current
*,3’ꢀꢀꢇꢋꢁꢇꢀꢉꢀꢇꢉꢆ)65
*,3’ꢀꢀꢇꢋꢁꢇꢀꢉꢀꢀꢇꢁ)65
,
&
9
)
ꢄ9ꢅ
ꢄ$ꢅ
7
–
ꢃꢏꢉꢇ&
7
–
ꢃꢁꢆ&
ꢀꢂꢇ
9
&(
ꢀꢇ9
ꢀꢉꢇ
ꢀꢁꢇ
ꢀꢇꢇ
ꢍꢇ
ꢆ
ꢉ
7
–
ꢁꢆ&
ꢂ
ꢁ
ꢀ
ꢇ
ꢌꢇ
ꢉꢇ
ꢁꢇ
ꢇ
7
–
ꢀꢈꢆ&
7
–
ꢃꢀꢈꢆ&
ꢆꢇ
ꢆ
ꢈ
ꢋ
ꢀꢀ
9
*(
ꢄ9ꢅ
ꢀꢇ
ꢋꢇ
,
)
ꢄ$ꢅ
Figure 12. Normalized V
GE(th)
vs junction
temperature
Figure 13. Normalized V
(BR)CES
vs. junction
temperature
*,3’ꢀꢀꢇꢋꢁꢇꢀꢉꢀꢁꢇꢂ)65
*,3’ꢀꢀꢇꢋꢁꢇꢀꢉꢀꢁꢇꢍ)65
9
ꢄ%5ꢅ&(6
9
*(ꢄWKꢅ
ꢄQRUPꢅ
ꢄQRUPꢅ
ꢀꢎꢇꢌ
,
&
ꢃꢁP$
9
&(
ꢃ9
*(
ꢀꢎꢀ
,
&
ꢃꢁP$
ꢀꢎꢇꢉ
ꢀꢎꢇꢁ
ꢀꢎꢇ
ꢀꢎꢇ
ꢇꢎꢋ
ꢇꢎꢋꢍ
ꢇꢎꢋꢌ
ꢇꢎꢋꢉ
ꢇꢎꢍ
ꢇꢎꢈ
ꢇꢎꢋꢁ
ꢇꢎꢋꢇ
ꢏꢆꢇ
ꢇ
ꢆꢇ
ꢀꢇꢇ
ꢀꢆꢇ
7
–
ꢄ&ꢅ
ꢏꢆꢇ
ꢇ
ꢆꢇ
ꢀꢇꢇ
ꢀꢆꢇ
7
–
ꢄ&ꢅ
DocID026224 Rev 3
7/18
Electrical characteristics
STGW40M120DF3, STGWA40M120DF3
Figure 14. Capacitance variation
Figure 15. Gate charge vs. gate-emitter voltage
*,3’ꢀꢀꢇꢋꢁꢇꢀꢉꢀꢂꢂꢍ)65
9
*(
*,3’ꢀꢀꢇꢋꢁꢇꢀꢉꢀꢂꢂꢂ)65
&
ꢄ9ꢅ
ꢄS)ꢅ
&
LHV
,
&
ꢃꢉꢇ$
,
*(
ꢃꢀP$
9
&&
ꢃꢋꢌꢇ9
ꢀꢌ
ꢀꢁ
ꢍ
ꢀꢇꢇꢇ
ꢀꢇꢇ
&
RHV
&
UHV
ꢀꢇ
ꢀ
ꢉ
ꢇ
Iꢃ ꢃꢀꢃ0+]ꢊꢃ9
*(
ꢃ ꢃꢇ
ꢀꢇ
ꢇ
ꢉꢇ
ꢍꢇ
ꢀꢁꢇ
4
J
ꢄQ&ꢅ
ꢇꢎꢀ
ꢀ
ꢀꢇꢇ
9
&(
ꢄ9ꢅ
Figure 16. Switching loss vs collector current
Figure 17. Switching loss vs gate resistance
*,3’ꢀꢀꢇꢋꢁꢇꢀꢉꢀꢂꢉꢋ)65
*,3’ꢀꢀꢇꢋꢁꢇꢀꢉꢀꢂꢆꢆ)65
(
(
ꢄ-ꢅ
ꢄ-ꢅ
9
&&
ꢃ ꢃꢌꢇꢇ
9
ꢊ
ꢃ9
*(
ꢃ ꢃꢀꢆ
9
ꢊ
ꢃ
5
*
ꢃ ꢃꢀꢇȍꢊꢃ7
–
ꢃ ꢃꢀꢈꢆ&
9
&&
ꢃ ꢃꢌꢇꢇꢃ
9
ꢊ
ꢃ9
*(
ꢃ ꢃꢀꢆꢃ
9
ꢊ
ꢃ
,
&
ꢃ ꢃꢉꢇꢃ$ꢊꢃ7
–
ꢃ ꢃꢀꢈꢆꢃ&
ꢆꢇꢇꢇ
ꢉꢇꢇꢇ
ꢌꢇꢇꢇ
(
2))
ꢉꢇꢇꢇ
ꢂꢇꢇꢇ
(
2))
(
21
(
21
ꢁꢇꢇꢇ
ꢁꢇꢇꢇ
ꢀꢇꢇꢇ
ꢇ
ꢇ
ꢁꢇ
ꢉꢇ
ꢌꢇ
ꢍꢇ
,
&
ꢄ$ꢅ
ꢇ
ꢀꢇ
ꢁꢇ
ꢂꢇ
ꢉꢇ
5
*
ꢄȍꢅ
Figure 18. Switching loss vs temperature
Figure 19. Switching loss vs collector-emitter
voltage
*,3’ꢀꢀꢇꢋꢁꢇꢀꢉꢀꢉꢇꢇ)65
*,3’ꢀꢀꢇꢋꢁꢇꢀꢉꢀꢉꢇꢉ)65
(
(
ꢄ-ꢅ
ꢄ-ꢅ
9
&&
ꢃꢌꢇꢇ
9
ꢊ
ꢃ9
*(
ꢃꢀꢆ
9
ꢊ
ꢃ
7
–
ꢃꢀꢈꢆ&ꢊꢃ9
*(
ꢃꢀꢆ
9
ꢊ
ꢃ
5
*
ꢃꢀꢇȍꢊꢃ,
&
ꢃꢉꢇ$
5
*
ꢃꢀꢇȍꢊꢃ,
&
ꢃꢉꢇ$
ꢌꢇꢇꢇ
ꢆꢇꢇꢇ
ꢉꢇꢇꢇ
ꢂꢇꢇꢇ
ꢂꢇꢇꢇ
(
2))
(
2))
(
21
ꢁꢇꢇꢇ
ꢁꢇꢇꢇ
(
21
ꢉꢇꢇ
ꢀꢇꢇꢇ
ꢇ
ꢀꢇꢇꢇ
ꢇ
ꢆꢇ
ꢀꢇꢇ
ꢀꢆꢇ
7
–
ꢄ&ꢅ
9
&(
ꢄ9ꢅ
ꢁꢇꢇ
ꢌꢇꢇ
ꢍꢇꢇ
8/18
DocID026224 Rev 3
STGW40M120DF3, STGWA40M120DF3
Electrical characteristics
Figure 20. Short circuit time and current vs V
GE
Figure 21. Switching times vs collector current
*,3’ꢀꢀꢇꢋꢁꢇꢀꢉꢀꢉꢁꢇ)65
6&
*,3’ꢀꢀꢇꢋꢁꢇꢀꢉꢀꢉꢉꢁ)65
W
W
VF
,
ꢄQVꢅ
9
&&ꢃ
ꢃꢌꢇꢇ9ꢊꢃ7
-ꢃ
ꢃꢀꢆꢇꢃ&
ꢄVꢅ
ꢉꢇ
7
–
5
ꢃꢀꢈꢆ&ꢊꢃ9
*(
ꢃꢀꢆ
9
ꢊ
ꢃ
ꢄ$ꢅ
,
6&
*
ꢃꢀꢇȍꢊꢃ9
&&
ꢃꢌꢇꢇ9
W
I
W
6&
ꢁꢇꢇ
ꢂꢆ
ꢀꢇꢇ
W
GRII
ꢂꢇ
ꢁꢆ
ꢁꢇ
ꢀꢆ
W
GRQ
ꢀꢆꢇ
ꢀꢇꢇ
ꢀꢇ
ꢀ
W
U
ꢀꢇ
ꢆ
ꢆꢇ
,
&
ꢄ$ꢅ
ꢇ
ꢁꢇ
ꢉꢇ
ꢌꢇ
ꢍꢇ
9
*(
ꢄ9ꢅ
ꢋ
ꢀꢇ
ꢀꢀ
ꢀꢁ
ꢀꢂ
ꢀꢉ
ꢀꢆ
Figure 22. Switching times vs. gate resistance
Figure 23.
Reverse recovery current vs. diode
current slope
*,3’ꢀꢁꢇꢋꢁꢇꢀꢉꢀꢆꢇꢉ)65
*,3’ꢀꢁꢇꢋꢁꢇꢀꢉꢀꢆꢀꢉ)65
W
,
ꢄQVꢅ
ꢄ
U
$
P
ꢅ
7
–
ꢃꢀꢈꢆ&ꢊꢃ9
*(
ꢃꢀꢆ
9
ꢊ
ꢃ
,
&
ꢃꢉꢇ$ꢊꢃ9
&&
ꢃꢌꢇꢇ9
,
)ꢃ
ꢃꢉꢇ$ꢊꢃ9
&&ꢃ
ꢃꢌꢇꢇ9
ꢌꢆ
W
GRII
9
*(
ꢃ ꢃꢀꢆ9
ꢆꢆ
ꢉꢆ
ꢂꢆ
W
I
ꢀꢇꢇ
ꢀꢇ
ꢀ
W
GRQ
7
–
ꢀꢈꢆ&
W
U
ꢁꢆ
ꢀꢆ
5
*
ꢄȍꢅ
ꢉꢇ
GLꢐGWꢄ$ꢐVꢅ
ꢁꢇꢇꢇ
ꢁꢇꢇ
ꢍꢇꢇ
ꢀꢉꢇꢇ
ꢇ
ꢀꢇ
ꢁꢇ
ꢂꢇ
Figure 24.
Reverse recovery time vs. diode
current slope
Figure 25.
Reverse recovery charge vs. diode
current slope
*,3’ꢀꢁꢇꢋꢁꢇꢀꢉꢀꢆꢁꢋ)65
W
UU
*,3’ꢀꢁꢇꢋꢁꢇꢀꢉꢀꢆꢉꢁ)65
4
UU
ꢄQVꢅ
ꢄQ&ꢅ
,
)ꢃ
ꢃꢉꢇ$ꢊꢃ9
&&ꢃ
ꢃꢌꢇꢇ9
,
)ꢃ
ꢃꢉꢇ$ꢊꢃ9
&&ꢃ
ꢃꢌꢇꢇ9
9
*(ꢃ
ꢃꢀꢆ9
ꢋꢇꢇ
ꢍꢇꢇ
ꢈꢇꢇ
ꢌꢇꢇ
ꢆꢇꢇ
9
*(ꢃ
ꢃꢀꢆ9
ꢀꢇꢇꢇꢇ
7
–
ꢀꢈꢆ&
7
–
ꢀꢈꢆ&
ꢉꢇꢇ
ꢂꢇꢇ
ꢀꢇꢇꢇ
ꢁꢇꢇ
GLꢐGWꢄ$ꢐVꢅ
ꢍꢇꢇ
ꢀꢉꢇꢇ
ꢁꢇꢇ
ꢍꢇꢇ
ꢀꢉꢇꢇ
GLꢐGWꢃꢄ$ꢐVꢅ
DocID026224 Rev 3
9/18
Electrical characteristics
STGW40M120DF3, STGWA40M120DF3
T
Figure 26. Reverse recovery energy vs. diode
current slope
*,3’ꢀꢁꢇꢋꢁꢇꢀꢉꢀꢆꢉꢈ)65
(
UU
ꢄ-ꢅ
,
)ꢃ
ꢃꢉꢇ$ꢊꢃ9
&&ꢃ
ꢃꢌꢇꢇ9
9
*(ꢃ
ꢃꢀꢆ9
7
–
ꢀꢈꢆ&
ꢀꢇꢇꢇ
ꢁꢇꢇ
GLꢐGWꢄ$ꢐVꢅ
ꢍꢇꢇ
ꢀꢉꢇꢇ
10/18
DocID026224 Rev 3
STGW40M120DF3, STGWA40M120DF3
Electrical characteristics
Figure 27.Thermal data for IGBT
ZthTO2T_A
K
d=0.5
0.2
0.1
10
-1
0.05
0.02
0.01
Single pulse
10
-2
10
-5
10
-2
10
-4
10
-1
10
-3
p
(s)
t
Figure 28.Thermal data for diode
DocID026224 Rev 3
11/18
Test circuits
STGW40M120DF3, STGWA40M120DF3
Figure 30. Gate charge test circuit
3
Test circuits
Figure 29. Test circuit for inductive load
switching
k
k
k
k
k
k
AM01504v1
AM01505v1
Figure 31. Switching waveform
Figure 32. Diode recovery times waveform
Q
rr
90%
di/dt
10%
V
G
I
F
t
rr
90%
10%
t
s
t
f
V
CE
T
r
(Voff)
Tcross
t
10% I
RRM
V
90%
10%
I
RRM
I
C
Td(off)
T
o
ff
Td(on)
T
o
n
Tf
RRM
T
r
(Ion)
dv/dt
AM01506v1
AM01507v1
12/18
DocID026224 Rev 3
STGW40M120DF3, STGWA40M120DF3
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
ECOPACK is an ST trademark.
4.1
TO-247, STGW40M120DF3
Figure 33. TO-247 drawing
0075325_H
DocID026224 Rev 3
13/18
Package mechanical data
STGW40M120DF3, STGWA40M120DF3
Table 8. TO-247 mechanical data
mm.
Typ.
Dim.
Min.
Max.
A
A1
b
4.85
2.20
1.0
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
5.60
14.80
4.30
b1
b2
c
2.0
3.0
0.40
19.85
15.45
5.30
14.20
3.70
D
E
e
5.45
18.50
5.50
L
L1
L2
∅
P
∅
R
S
3.55
4.50
5.30
3.65
5.50
5.70
14/18
DocID026224 Rev 3
STGW40M120DF3, STGWA40M120DF3
Package mechanical data
4.2
TO-247 long leads, STGWA40M120DF3
Figure 34. TO-247 long leads drawing
8463846_A_F
DocID026224 Rev 3
15/18
Package mechanical data
STGW40M120DF3, STGWA40M120DF3
Table 9. TO-247 long leads mechanical data
mm
Dim.
Min.
Typ.
Max.
A
A1
A2
b
4.90
2.31
1.90
1.16
5.00
2.41
2.00
5.10
2.51
2.10
1.26
3.25
2.25
0.66
21.10
15.90
5.10
2.60
5.54
20.10
4.30
3.70
6.00
6.25
b2
b3
c
0.59
20.90
15.70
4.90
D
21.00
15.80
5.00
E
E2
E3
e
2.40
2.50
5.34
5.44
L
19.80
19.92
L1
P
3.50
5.60
6.05
3.60
6.15
Q
S
16/18
DocID026224 Rev 3
STGW40M120DF3, STGWA40M120DF3
Revision history
5
Revision history
Table 10. Document revision history
Changes
Date
Revision
22-Apr-2014
1
Initial release.
Document status promoted from preliminary to production data.
16-Sep-2014
10-Nov-2014
2
3
Minor text changes.
DocID026224 Rev 3
17/18
STGW40M120DF3, STGWA40M120DF3
IMPORTANT NOTICE – PLEASE READ CAREFUL
L
Y
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and
improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on
ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order
acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or
the design of Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of S
T
.
A
ll other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2014 STMicroelectronics – All rights reserved
18/18
DocID026224 Rev 3
