STMicroelectronics-STGW80H65DFB-4
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STGW80H65DFB-4
Datasheet
Trench gate field-stop 650 V, 80 A high speed HB series IGBT
Features
•
•
•
•
•
•
•
•
•
V
CE(sat)
= 1.6 V (typ.) @ I
C
= 80 A
Maximum junction temperature: T
J
= 175 °C
High speed switching series
Minimized tail current
4
3
Tight parameter distribution
2
1
Safe paralleling
TO247-4
Low thermal resistance
Very fast soft recovery antiparallel diode
Excellent switching performance thanks to the extra driving kelvin pin
C(1, TAB)
G(4)
K(3)
Applications
•
•
Photovoltaic inverters
High frequency converters
E(2)
NG4K3E2C1_TAB
Description
This device is an IGBT developed using an advanced proprietary trench gate field-
stop structure. The device is part of the new HB series of IGB
T
s
, which represents
an optimum compromise between conduction and switching loss to maximize the
efficiency of any frequency converter. A faster switching event can be achieved by
the Kelvin pin, which separates power path from driving signal. Furthermore, the
slightly positive V
CE(sat)
temperature coefficient and very tight parameter distribution
result in safer paralleling operation.
Product status link
Product summary
Order code
Marking
STGW80H65DFB-4
G80H65DFB
TO247-4
Package
Packing
Tube
DS11137
–
Rev 5
–
December 2021
For further information contact your local STMicroelectronics sales office.
STGW80H65DFB-4
Electrical ratings
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
650
Unit
V
Collector-emitter voltage (V
= 0 V)
GE
V
CES
80
Continuous collector current at T
= 25 °C
C
I
A
C
Continuous collector current at T
= 100 °C
C
Pulsed collector current (t
≤ 1 μs, T
< 175 °C)
I
300
±20
A
V
V
p
J
CP
Gate-emitter voltage
Transient gate-emitter voltage
V
GE
±30
80
Continuous forward current at T
= 25 °C
C
I
A
F
Continuous forward current at T
= 100 °C
C
Pulsed forward current (t
≤ 1 μs, T
< 175 °C)
I
FP
300
A
p
J
P
T
o
tal power dissipation at T
= 25 °C
470
W
TOT
STG
C
T
Storage temperature range
– 55 to 150
– 55 to 175
°C
T
Operating junction temperature range
J
1. Current
level is limited by bond wires
2. Defined
by design, not subject to production test.
Table 2.
Thermal data
Symbol
Parameter
Thermal resistance junction-case IGBT
Thermal resistance junction-case diode
Thermal resistance junction-ambient
Value
0.32
0.66
50
Unit
R
thJC
R
°C/W
thJC
R
thJA
DS11137
–
Rev 5
page 2/15
STGW80H65DFB-4
Electrical characteristics
2
Electrical characteristics
T
C
= 25 °C unless otherwise specified
Table 3.
Static characteristics
Test conditions
Symbol
Parameter
Min.
Typ.
Max.
Unit
Collector-emitter breakdown
voltage
V
V
= 0
V
, I
= 2
m
A
650
V
(BR)CES
GE
C
V
V
V
= 15
V
, I
=
8
0 A
1.6
1.8
1.9
2.15
1.8
1.7
6
2.0
GE
GE
GE
C
Collector-emitter saturation
voltage
V
= 15
V
, I
=
8
0 A, T
= 125 °C
V
V
CE(sat)
C
J
= 15
V
, I
=
8
0 A, T
= 175 °C
C
J
I =
80 A
F
2.8
V
I =
80 A, T
= 125 °C
F J
Forward on-voltage
F
I =
80 A, T
= 175 °C
F
J
V
V
= V
, I
= 1 mA
Gate threshold voltage
Collector cut-off current
Gate-emitter leakage current
5
7
V
GE(th)
CE
GE
C
I
V
V
= 0
V
, V
=
6
50 V
100
±250
µA
nA
CES
GES
GE
CE
CE
I
= 0
V
, V
=
±
20 V
GE
Table 4.
Dynamic characteristics
Test conditions
Symbol
Parameter
Input capacitance
Min.
Typ.
10524
385
Max.
Unit
C
–
–
–
–
–
–
–
–
–
–
–
–
ies
C
oes
V
= 25
V
, f = 1
M
Hz, V
= 0 V
GE
Output capacitance
pF
CE
C
res
Reverse transfer capacitance
T
o
tal gate charge
215
Q
414
g
V
= 520
V
, I
=
8
0 A, V
= 0 to 15 V
CC
C
GE
Q
ge
Gate-emitter charge
Gate-collector charge
78
nC
Q
170
gc
DS11137
–
Rev 5
page 3/15
STGW80H65DFB-4
Electrical characteristics
Table 5.
IGBT switching characteristics (inductive load)
Symbol
Parameter
Turn-on delay time
Test conditions
Min.
Typ.
75
Max.
Unit
ns
t
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
d(on)
t
Current rise time
35
r
(di/dt)
Turn-on current slope
Turn-off-delay time
Current fall time
1750
336
23
A/µs
ns
on
V
R
= 400
V
, I
=
8
0 A, V
= 15
V
,
C GE
CE
t
d(off)
= 10 Ω
G
t
f
E
Turn-on switching energy
Turn-off switching energy
T
o
tal switching energy
Turn-on delay time
1
on
E
mJ
1.7
2.7
66
off
E
ts
t
d(on)
ns
A/µs
ns
t
Current rise time
38
r
(di/dt)
Turn-on current slope
Turn-off-delay time
Current fall time
1670
403
45
on
V
= 400 V, I
= 80 A, V
= 15 V,
C GE
CE
t
d(off)
R
= 10 Ω, T
= 175 °C
J
G
t
f
E
Turn-on switching energy
Turn-off switching energy
T
o
tal switching energy
1.5
2.47
3.97
on
E
mJ
off
E
ts
1. Including
the reverse recovery of the diode.
2. Including
the tail of the collector current.
Table 6.
Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
112
Max.
Unit
ns
t
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Peak rate of fall of reverse
–
–
–
–
–
–
rr
Q
955
27.2
nC
A
rr
I =
80 A, V
= 400
V
, V
=
1
5 V
F
R
GE
di/dt = 1000 A/µs
I
rrm
dI /dt
rr
–
1515
–
A/µs
recovery current during t
b
E
Reverse recovery energy
Reverse recovery time
–
–
–
–
170
164
3838
52
–
–
–
–
µJ
ns
nC
A
rr
t
rr
Q
Reverse recovery charge
Reverse recovery current
Peak rate of fall of reverse
rr
I =
80 A, V
= 400 V, V
= 15 V,
F
R
GE
T =
175 °C di/dt = 1000 A/µs
J
I
rrm
dI /dt
rr
–
–
785
635
–
–
A/µs
µJ
recovery current during t
b
E
Reverse recovery energy
rr
DS11137
–
Rev 5
page 4/15
STGW80H65DFB-4
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1.
Power dissipation vs. case temperature
Figure 2.
Collector current vs. case temperature
GIPD160920130941FSR
I
C
P
TOT
(W)
GIPD160920130948FSR
V
GE
= 15 V, T
J
= 175 °C
(A)
V
GE
=15
V
,
T
J
=175 °C
120
100
80
400
300
200
60
40
100
0
20
0
0
25 50 75
100 125 150
T
C
(°C)
0
50
100
150
T
C
(°C)
Figure 3.
Output characteristics (T
J
= 25 °C)
Figure 4.
Output characteristics (T
J
= 175 °C)
IGBT060715EWFRWOC25
I
C
(A)
160
I
C
(A)
160
V
GE
= 15 V
V
GE
= 15 V
IGBT060715EWFRWOC175
13 V
13 V
11 V
11 V
9 V
140
120
100
80
140
120
100
80
9 V
60
60
40
40
7 V
20
0
20
0
7 V
0
1
2
3
4
V
CE
(V)
0
1
2
3
4
V
CE
(V)
Figure 5.
V
CE
(sat) vs. junction temperature
Figure 6.
V
CE
(sat) vs. collector current
IGBT060715EWFRWVCET
IGBT060715EWFRWVCEC
V
GE
= 15 V
V
CE(sat)
V
CE(sat)
(V)
(V)
V
GE
= 15 V
2.4
T
J
= 175 °C
T
J
= 25 °C
T
J
= -40 °C
2.6
I
C
= 160 A
2.0
1.6
1.2
0.8
2.2
1.8
I
C
= 80 A
I
C
= 40 A
1.4
1.0
0.4
0.0
-50
0
50
100
150
T
J
(°C)
0
40
80
120
160
I
C
(A)
DS11137
–
Rev 5
page 5/15
STGW80H65DFB-4
Electrical characteristics (curves)
Figure 7.
Collector current vs. switching frequency
Figure 8.
Forward bias safe operating area
IGBT060715EWFRWCCS
IGBT171120161002FSOA
I
C
I
C
(A)
(A)
160
140
120
100
t
p
= 1µs
10
2
T
C
= 100 °C
T
C
= 80 °C
t
p
= 10µs
80
60
40
t
p
= 100µs
10
1
Rectangular current shape
single pulse, T
C
= 25°C
T
J
< 175 °C, V
GE
= 15 V
10
1
10
2
20
0
(duty cycle = 0.5, V
= 400
V
, R
=
1
0 Ω,
CC
G
V
= 0/15
V
, T
=
1
75 °C)
GE
J
10
0
10
0
10
0
10
1
10
2
f (kHz)
V
CE
(V)
Figure 10.
Diode V
F
vs. forward current
Figure 9.
Transfer characteristics
IGBT060715EWFRWTCH
I
C
(A)
IGBT060715EWFRWDVF
V
F
(V)
V
CE
= 4 V
2.6
2.2
1.8
1.4
1.0
200
T
J
= -40 °C
T
J
= 25 °C
T
J
= 175 °C
160
120
80
T
J
= 175 °C
40
0
0.6
0.2
T
J
= 25 °C
9
5
6
7
8
V
GE
(V)
0
20
40
60
80
100
I
F
(A)
Figure 11.
Normalized V
GE(th)
vs. junction temperature
Figure 12.
Normalized V
(BR)CES
vs. junction temperature
V
GE(th)
(norm)
GIPD160920131151FSR
GIPD160920131144FSR
V
BR(CES)
(norm)
1.1
I
C
= 2 mA
I
C
= 1mA
1.1
1.0
0.9
0.8
1.0
0.9
0.7
0.6
-50
0
50
100
150
T
J
(°C)
-50
0
50
100
150
T
J
(°C)
DS11137
–
Rev 5
page 6/15
STGW80H65DFB-4
Electrical characteristics (curves)
Figure 13.
Capacitance variations
Figure 14.
Gate charge vs. gate-emitter voltage
C
GIPD160920131156FSR
GIPD160920131200FSR
V
GE
(pF)
10000
1000
(V)
16
I
C
= 80 A
V
CC
= 520 V
C
IES
12
8
C
OES
C
RES
100
10
4
0
0
100
200
300
400
Q
g
(nC)
0.1
1
10
100
V
CE
(V)
Figure 15.
Switching energy vs. collector current
Figure 16.
Switching energy vs. gate resistance
IGBT060715EWFRWSLG
IGBT060715EWFRWSLC
E
E
(mJ)
(mJ)
6
E
OFF
4
5
4
3
E
OFF
3
2
E
ON
2
E
ON
1
1
0
0
0
0
40
80
120
I
C
(A)
5
10
15
20
R
G
(Ω)
160
Figure 17.
Switching energy vs. temperature
Figure 18.
Switching energy vs. collector emitter voltage
IGBT060715EWFRWSLT
IGBT060715EWFRWSLV
E
(mJ)
E
(mJ)
V
CC
= 400
V
,
I
C
= 80 A, R
G
= 10 Ω, V
GE
= 15 V
I
C
= 80 A, R
G
= 10 Ω, V
GE
= 15
V
,
T
J
= 175 °C
2.5
3.0
E
OFF
2.0
1.5
E
OFF
2.0
E
ON
E
ON
1.0
0
1.0
0.5
0
50
100
150
T
J
(°C)
150
250
350
450
V
CE
(V)
DS11137
–
Rev 5
page 7/15
STGW80H65DFB-4
Electrical characteristics (curves)
Figure 19.
Switching times vs. collector current
Figure 20.
Switching times vs. gate resistance
IGBT060715EWFRWSTC
IGBT060715EWFRWSTR
t
t
(ns)
(ns)
t
d(off)
t
d(off)
10
2
t
d(on)
t
f
10
2
t
d(on)
t
r
10
1
t
f
t
r
V
CC
= 400
V
,
V
GE
= 15
V
,
R
G
= 10 Ω, T
J
= 175 °C
V
CC
= 400
V
,
V
GE
= 15 V, I
C
= 80 A, T
J
= 175 °C
10
1
10
0
0
40
80
120
160
I
C
(A)
0
5
10
15
20
R
G
(Ω)
Figure 21.
Reverse recovery current vs. diode current
slope
Figure 22.
Reverse recovery time vs. diode current slope
IGBT060715EWFRWRRT
t
rr
(ns)
IGBT060715EWFRWRRC
V
CC
= 400
V
,
V
GE
= 15
V
,
I
F
= 80 A, T
J
= 175 °C
(A)
I
rrm
V
CC
= 400
V
,
V
GE
= 15
V
,
I
F
= 80 A, T
= 175 °C
J
180
100
90
80
70
60
50
160
140
120
100
80
60
40
500 1000
1500 2000 2500 3000
di/dt (A/µs)
500 1000
1500 2000 2500 3000
di/dt (A/µs)
Figure 23.
Reverse recovery charge vs. diode current
slope
Figure 24.
Reverse recovery energy vs. diode current
slope
IGBT060715EWFRWRRQ
IGBT060715EWFRWRRE
V
CC
= 400
V
,
V
GE
= 15
V
,
I
F
= 80 A, T
J
= 175 °C
(µJ)
Q
rr
E
rr
V
CC
= 400
V
,
V
GE
= 15
V
,
I
F
= 80 A, T
J
= 175 °C
(µC)
700
600
500
400
300
200
100
6.0
5.5
5.0
4.5
4.0
3.5
0
500 1000
1500 2000 2500 3000
di/dt (A/µs)
500 1000
1500 2000 2500 3000
di/dt (A/µs)
DS11137
–
Rev 5
page 8/15
STGW80H65DFB-4
Electrical characteristics (curves)
Figure 25.
Thermal impedance for IGBT
ZthTO2T_A
K
δ = 0.5
δ = 0.2
δ = 0.05
δ = 0.1
δ = 0.02
δ = 0.01
10
-1
Single pulse
Z
th
= k*R
thJC
δ = t
p
/t
t
p
t
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
(s)
Figure 26.
Thermal impedance for diode
DS11137
–
Rev 5
page 9/15
STGW80H65DFB-4
Test circuits
3
Test circuits
Figure 27.
Test circuit for inductive load switching
A
A
B
Figure 28.
Gate charge test circuit
C
E
L=100 μH
V
CC
G
12 V
47 kΩ
1 kΩ
100 nF
B
3.3
μF
1000
μF
V
CC
C
V
i
≤
V
I
G
=CONST
2.7 kΩ
D.U.
T
.
100 Ω
GMAX
G
D.U.T
E
2200
µF
V
G
R
G
K
47 kΩ
1 kΩ
P
W
GND1
(signal ground)
GND2
(power ground)
GIPG030320161351SA
GND1
GND2
(signal ground)
(power ground)
HB650_4_leads
Figure 29.
Switching waveform
Figure 30.
Diode reverse recovery waveform
90%
10%
V
G
90%
10%
V
CE
t
r(Voff)
t
cross
10
90%
10%
I
C
t
d(off)
t
off
t
d(on)
t
on
t
f
t
r(Ion)
AM01506v1
GADG140820170937SA
DS11137
–
Rev 5
page 10/15
STGW80H65DFB-4
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
4.1
TO247-4 package information
Figure 31.
TO247-4 package outline
8405626_Rev_3
DS11137
–
Rev 5
page 11/15
STGW80H65DFB-4
TO247-4 package information
Table 7.
TO247-4 mechanical data
mm
Dim.
Min.
4.90
2.31
1.90
1.16
1.15
0
Typ.
5.00
2.41
2.00
Max.
5.10
2.51
2.10
1.29
1.25
0.20
0.66
0.62
21.10
16.85
1.35
25.27
15.90
13.50
5.10
2.60
2.64
5.18
20.10
3.70
7.40
2.60
6.00
A
A1
A2
b
b1
b2
c
1.20
0.59
0.58
20.90
16.25
1.05
24.97
15.70
13.10
4.90
2.40
2.44
4.98
19.80
3.50
c1
D
0.60
21.00
16.55
1.20
D1
D2
D3
E
25.12
15.80
13.30
5.00
E1
E2
E3
e
2.50
2.54
e1
L
5.08
19.92
3.60
P
P1
P2
Q
2.40
5.60
2.50
6.15
S
T
9.80
6.00
10.20
6.40
0.10
U
aaa
0.04
DS11137
–
Rev 5
page 12/15
STGW80H65DFB-4
Revision history
Table 8.
Document revision history
Date
Revision
Changes
05-Aug-2015
1
First release.
Updated features in cover page.
Updated
T
a
ble 2: “Absolute maximum ratings”
and
Figure 9: “Forward bias safe
operating area”
.
17-Nov-2016
2
3
Minor text changes.
Updated the title in cover page,
T
a
ble 2: “Absolute maximum ratings”
,
Table 4: “Static
characteristics”
and
T
a
ble 6: “IGBT switching characteristics (inductive load)”
.
03-Mar-2017
Minor text changes.
Updated
T
a
ble 1. Absolute maximum ratings.
03-Jul-2019
03-Dec-2021
4
5
Minor text changes.
DS11137
–
Rev 5
page 13/15
STGW80H65DFB-4
Contents
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
2
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
3
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10
Package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
TO247-4 package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
DS11137
–
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STGW80H65DFB-4
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