STMicroelectronics-STGWA20IH65DF
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STGWA20IH65DF
Datasheet
Trench gate field-stop 650 V, 20 A, soft-switching IH series IGBT
in a TO
‑
247 long leads package
Features
•
•
•
•
•
•
•
•
Designed for soft-commutation
Maximum junction temperature: T
J
= 175 °C
V
CE(sat)
= 1.55 V (typ.) @ I
C
= 20 A
Minimized tail current
Tight parameter distribution
Low thermal resistance
Low drop voltage freewheeling co-packaged diode
Positive V
CE(sat)
temperature coefficient
C(2, TAB)
Applications
G(1)
•
•
•
E(3)
NG1E3C2T
Description
The newest IGBT 650 V soft-switching IH series has been developed using an
advanced proprietary trench gate field-stop structure, whose performance is
optimized both in conduction and switching losses for soft commutation. A
freewheeling diode with a low drop forward voltage is included. The result is a
product specifically designed to maximize efficiency for any resonant and soft-
switching applications.
Product status link
Product summary
Order code
Marking
STGWA20IH65DF
G20IH65DF
Package
Packing
TO-247 long leads
Tube
DS13310
–
Rev 1
–
April 2020
For further information contact your local STMicroelectronics sales office.
STGWA20IH65DF
Electrical ratings
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
V
Collector-emitter voltage (V
= 0 V)
GE
650
V
CES
Continuous collector current at T
= 25 °C
40
C
I
C
Continuous collector current at T
= 100 °C
20
60
A
V
A
C
I
Pulsed collector current
Gate-emitter voltage
CP
±20
V
GE
Transient gate-emitter voltage (t
≤ 10 μs)
±30
p
Continuous forward current at T
= 25 °C
20
C
I
F
Continuous forward current at T
= 100 °C
10
C
I
Pulsed forward current
60
FP
P
T
T
o
tal power dissipation at T
= 25 °C
159
W
TOT
C
Storage temperature range
– 55 to 150
– 55 to 175
STG
°C
T
Operating junction temperature range
J
1. Pulse
width limited by maximum junction temperature.
Table 2.
Thermal data
Symbol
Parameter
Thermal resistance junction-case IGBT
Value
0.94
2.08
50
Unit
R
thJC
thJA
Thermal resistance junction-case diode
Thermal resistance junction-ambient
°C/W
R
DS13310
–
Rev 1
page 2/14
STGWA20IH65DF
Electrical characteristics
2
Electrical characteristics
T
C
= 25 °C unless otherwise specified
Table 3.
Static characteristics
Test conditions
Symbol
Parameter
Min.
Typ.
Max.
Unit
Collector-emitter breakdown
voltage
V
V
= 0
V
, I
=
2
50 μA
650
V
(BR)CES
GE
C
V
V
= 15
V
, I
=
2
0 A
1.55
1.80
2.05
GE
C
= 15
V
, I
=
2
0 A,
GE
C
Collector-emitter saturation
voltage
V
T =
125 °C
J
V
V
CE(sat)
V
= 15
V
, I
=
2
0 A,
C
GE
1.95
T =
175 °C
J
I =
10 A
F
1.50
1.35
1.25
1.85
6
2.15
I =
10 A, T
= 125 °C
F
J
V
Forward on-voltage
F
I =
10 A, T
= 175 °C
F
J
I =
20 A
F
V
V
CE
V
GE
V
CE
= V
, I
= 1 mA
GE C
Gate threshold voltage
Collector cut-off current
Gate-emitter leakage current
5
7
V
GE(th)
I
= 0
V
, V
=
6
50 V
25
µA
nA
CES
GES
CE
I
= 0
V
, V
=
±
20 V
±250
GE
Table 4.
Dynamic characteristics
Test conditions
Symbol
Parameter
Input capacitance
Min.
Typ.
1000
62
Max.
Unit
C
–
–
–
–
–
–
–
–
–
–
ies
C
oes
V
= 25
V
, f = 1
M
Hz, V
= 0 V
Output capacitance
pF
CE
GE
C
res
Reverse transfer capacitance
T
o
tal gate charge
25
Q
V
V
= 520
V
, I
=
2
0 A,
56
g
CC
C
= 0 to 15 V
Q
GE
Gate-emitter charge
9.6
ge
nC
Q
gc
Gate-collector charge
–
26.5
–
DS13310
–
Rev 1
page 3/14
STGWA20IH65DF
Electrical characteristics
Table 5.
IGBT switching characteristics (inductive load)
Symbol
Parameter
Turn-off delay time
Test conditions
Min.
Typ.
Max.
Unit
t
V
V
= 400 V, I
= 20 A,
–
121
–
d(off)
CC
GE
C
= 15
V
, R
=
2
2 Ω
G
t
Current fall time
–
–
38
–
–
f
t
V
V
= 400
V
, I
=
2
0 A,
ns
Turn-off delay time
140
d(off)
CC
GE
C
= 15
V
, R
=
2
2 Ω,
G
T =
175 °C
J
t
f
Current fall time
–
90
–
Table 6.
IGBT switching characteristics (capacitive load)
Symbol
Parameter
Test conditions
= 320
V
, R
=
1
0 Ω,
Min.
Typ.
Max.
Unit
V
CC
G
I
= 20 A, L = 100 μH,
C
–
110
–
C
snub
= 22 nF
E
Turn-off switching energy
μJ
off
V
= 320 V, R
= 10 Ω,
G
CC
I
= 20 A, L = 100 μH,
C
–
230
–
C
snub
= 22 n
F
, T
=
1
75 °C
J
1. Including
the tail of the collector current.
DS13310
–
Rev 1
page 4/14
STGWA20IH65DF
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1.
Power dissipation vs case temperature
Figure 2.
Collector current vs case temperature
GADG100420200844PDT
GADG100420200844CCT
P
TOT
I
C
(W)
(A)
V
GE
≥
15 V, T
J
≤
175 °C
V
GE
≥
15
V
,
T
J
≤
175 °C
160
40
120
80
30
20
40
0
10
0
25
75
125
175
25
75
125
175
T
C
(°C)
T
C
(°C)
Figure 3.
Output characteristics (T
J
= 25 °C)
Figure 4.
Output characteristics (T
J
= 175 °C)
GADG100420200845OC25
GADG100420200845OC175
I
C
I
C
V
GE
= 15 V
V
GE
= 15 V
(A)
(A)
11 V
50
50
11 V
13 V
13 V
40
30
20
40
30
20
9 V
7 V
9 V
10
0
10
0
7 V
0
1
2
3
4
5
V
CE
(V)
0
1
2
3
4
5
V
CE
(V)
Figure 5.
V
CE(sat)
vs junction temperature
Figure 6.
V
CE(sat)
vs collector current
GADG100420200846VCET
GADG100420200846VCEC
V
CE(sat)
V
CE(sat)
(V)
(V)
V
GE
= 15 V
2.8
V
GE
= 15 V
2.8
T
J
= 175 °C
2.4
2.4
2.0
1.6
I
C
= 40 V
T
J
= 25 °C
2.0
I
C
= 20 V
1.6
T
J
= -40 °C
I
C
= 10 V
1.2
1.2
0.8
0.8
-50
0
50
100
150
0
10
20
30
40
50
I
C
(A)
T
J
(°C)
DS13310
–
Rev 1
page 5/14
STGWA20IH65DF
Electrical characteristics (curves)
Figure 7.
Forward bias safe operating area
Figure 8.
Transfer characteristics
IGBT100420200847FSOA
GADG170420201008TCH
I
C
I
C
(A)
(A)
V
CE
= 6 V
t
p
= 1 µs
50
40
30
20
t
p
= 10 µs
10
1
t
p
= 100 µs
T
J
= 175 °C
t
p
= 1 ms
10
0
T
J
= 25 °C
Single pulse, T
C
= 25 °C,
T
J
≤
175 °C, V
GE
= 15 V
10
0
10
-1
10
0
10
1
10
2
V
CE
(V)
5
6
7
8
9
10
V
GE
(V)
Figure 9.
Diode V
F
vs forward current
Figure 10.
Normalized V
GE(th)
vs junction temperature
GADG100420200852DVF
V
F
(V)
IGBT100820181016NVGE
V
GE(th)
(Norm.)
V
CE
= V
GE
I
C
= 1 mA
E
3.0
1.1
1.0
0.9
0.8
T
J
= 25 °C
2.5
T
J
= -40 °C
2.0
1.5
T
J
= 175 °C
1.0
0.7
0.6
0.5
0.0
0
10
20
30
I
F
(A)
-50
0
50
100
150
T
J
(°C)
Figure 12.
Capacitance variations
Figure 11.
Normalized V
(BR)CES
vs junction temperature
GADG100420200853CVR
C
(pF)
IGBT100820181016NVBR
V
(BR)CES
(Norm.)
1.08
10
3
10
2
C
ies
I
C
= 250 μA
1.04
1.00
C
oes
C
res
10
1
10
0
f = 1 MHz
0.96
0.92
10
-1
10
0
10
1
10
2
V
CE
(V)
-50
0
50
100
150
T
J
(°C)
DS13310
–
Rev 1
page 6/14
STGWA20IH65DF
Electrical characteristics (curves)
Figure 13.
Gate charge vs gate-emitter voltage
Figure 14.
Switching energy vs collector current
GADG170420201009GCGE
GADG100420200853SLC
V
GE
(V)
E
off
(mJ)
V
CC
= 520
V
,
I
C
= 20 A,
I
G
= 1.3 mA
V
CC
= 400 V, R
G
= 22 Ω,
V
GE
= 15
V
,
T
J
=175
℃
15
0.8
12
9
0.6
0.4
E
off
6
0.2
0.0
3
0
0
15
30
45
60
Q
g
(nC)
0
10
20
30
40
I
C
(A)
Figure 15.
Switching energy vs temperature
Figure 16.
Switching energy vs collector emitter voltage
GADG100420200854SLT
GADG100420200856SLV
E
off
E
off
(mJ)
(mJ)
V
CC
= 400
V
,
I
C
= 20 A,
R
g
= 22 Ω, V
GE
= 15 V
I
C
= 20 A, R
g
= 22 Ω,
V
GE
= 15 V, T
J
=175 °C
0.5
0.6
0.4
0.3
0.5
E
off
E
off
0.4
0.2
0.1
0.3
0.2
0
50
100
150
150
250
350
450
V
CE
(V)
T
J
(°C)
Figure 17.
Switching times vs collector current
Figure 18.
Switching energy vs snubber capacitance
GADG100420200857STC
V
CC
= 400
V
,
R
G
= 22 Ω,
t
GADG170420201024SSC
E
off
(ns)
V
CC
= 320
V
,
I
C
= 20 A,
(mJ)
V
GE
= 15
V
,
T
J
=175
℃
R
g
= 10 Ω, V
GE
= 15 V
0.3
t
d(off)
10
3
0.2
T
J
= 175 °C
10
2
10
1
t
f
0.1
T
J
= 25 °C
0.0
0
10
20
30
40
I
C
(A)
0
20
40
60
80
100
C
snub
(nF)
DS13310
–
Rev 1
page 7/14
STGWA20IH65DF
Electrical characteristics (curves)
Figure 19.
Thermal impedance for IGBT
Figure 20.
Thermal impedance for diode
ZthTO2T_B
K
δ=0.5
0.2
0.1
0.05
10
-1
0.02
Zth=k Rthj-c
δ=tp/t
0.01
Single pulse
tp
t
10
-2
10
-2
10
-5
10
-4
10
-3
10
-1
t
p
(s)
DS13310
–
Rev 1
page 8/14
STGWA20IH65DF
Test circuits
3
Test circuits
Figure 22.
Test circuit for snubbed inductive load
switching
Figure 21.
Test circuit for inductive load switching
A
A
C
E
L
=
1
0
0
µ
H
G
B
B
V
CC
3
.
3
µF
1000
µF
C
G
D
.
U
.
T
R
G
E
+
–
AM01504v1
AM17096v1
Figure 23.
Gate charge test circuit
Figure 24.
Switching waveform
V
CC
R
L
90%
10%
V
G
V
i
≤
V
GMAX
I
G
= CONST
2.7 kΩ
100 Ω
90%
D.U.
T
.
2200
μF
10%
V
CE
t
r(Voff)
t
cross
90%
47 kΩ
10%
t
d(off)
I
C
t
d(on)
t
on
t
f
t
r(Ion)
t
off
1 kΩ
P
W
AM01506v1
GADG160420181048IG
DS13310
–
Rev 1
page 9/14
STGWA20IH65DF
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
4.1
TO-247 long leads package information
Figure 25.
TO-247 long leads package outline
8463846_2_F
DS13310
–
Rev 1
page 10/14
STGWA20IH65DF
TO-247 long leads package information
Table 7.
TO-247 long leads package mechanical data
mm
Typ.
5.00
2.41
2.00
Dim.
Min.
4.90
2.31
1.90
1.16
Max.
5.10
2.51
2.10
1.26
3.25
2.25
0.66
21.10
15.90
5.10
2.60
5.54
20.10
4.30
3.70
6.00
6.25
A
A1
A2
b
b2
b3
c
0.59
20.90
15.70
4.90
D
21.00
15.80
5.00
E
E2
E3
e
2.40
2.50
5.34
5.44
L
19.80
19.92
L1
P
3.50
5.60
6.05
3.60
6.15
Q
S
DS13310
–
Rev 1
page 11/14
STGWA20IH65DF
Revision history
Table 8.
Document revision history
Date
Revision
Changes
15-Apr-2020
1
First release.
DS13310
–
Rev 1
page 12/14
STGWA20IH65DF
Contents
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
2
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
3
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
9
Package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10
TO-247 long leads package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
10
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12
DS13310
–
Rev 1
page 13/14
STGWA20IH65DF
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T
.
F
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© 2020 STMicroelectronics – All rights reserved
DS13310
–
Rev 1
page 14/14
