STMicroelectronics-STGWA25S120DF3
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STGW25S120DF3,
STGWA25S120DF3
Trench gate field-stop IGB
T
, S
s
eries
1200 V, 25 A low drop
Datasheet
–
production data
Features
•
10 µs of short-circuit withstand time
•
V
CE(sat)
= 1.6 V (typ.) @ I
C
= 25 A
•
Tight parameter distribution
•
Safer paralleling
•
Low thermal resistance
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•
Soft and fast recovery antiparallel diode
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Applications
•
Industrial drives
•
UPS
Figure 1. Internal schematic diagram
•
Solar
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•
Welding
Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the S series of
1200 V IGB
T
s
w
hich is tailored to maximize
efficiency of low frequency industrial systems.
Furthermore, a positive V
CE(sat)
temperature
coefficient and tight parameter distribution result
in safer paralleling operation.
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Table 1. Device summary
Order code
Marking
Package
Packing
STGW25S120DF3
STGWA25S120DF3
G25S120DF3
G25S120DF3
TO-247
Tube
Tube
TO-247 long leads
December 2014
DocID026374 Rev 2
1/18
This is information on a product in full production.
Contents
STGW25S120DF3, STGWA25S120DF3
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2/18
DocID026374 Rev 2
STGW25S120DF3, STGWA25S120DF3
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
V
CES
I
C
Collector-emitter voltage (V
GE
= 0)
Continuous collector current at T
C
= 25 °C
Continuous collector current at T
C
= 100 °C
Pulsed collector current
1200
50
V
A
I
C
25
A
(1)
I
CP
100
A
V
GE
I
F
Gate-emitter voltage
±20
V
Continuous forward current at T
C
= 25 °C
Continuous forward current at T
C
= 100 °C
Pulsed forward current
50
A
I
F
25
A
(1)
I
FP
100
A
P
TOT
T
STG
T
J
T
o
tal dissipation at T
C
= 25 °C
Storage temperature range
375
W
°C
°C
– 55 to 150
– 55 to 175
Operating junction temperature
1. Pulse
width limited by maximum junction temperature.
Table 3. Thermal data
Parameter
Symbol
Value
Unit
R
thJC
R
thJC
R
thJA
Thermal resistance junction-case IGBT
Thermal resistance junction-case diode
Thermal resistance junction-ambient
0.4
0.96
50
°C/W
°C/W
°C/W
DocID026374 Rev 2
3/18
18
Electrical characteristics
STGW25S120DF3, STGWA25S120DF3
2
Electrical characteristics
T
J
= 25 °C unless otherwise specified
Table 4. Static characteristics
Test conditions
Symbol
Parameter
Min. Typ. Max. Unit
Collector-emitter
V
(BR)CES
breakdown voltage
(V
GE
= 0)
I
C
= 2 mA
1200
V
V
GE
= 15
V
,
I
C
= 25 A
1.6
1.8
2.1
4.1
V
GE
= 15
V
,
I
C
= 25 A,
T
J
= 125 °C
Collector-emitter saturation
voltage
V
CE(sat)
V
V
GE
= 15
V
,
I
C
= 25 A
T
J
= 175 °C
1.9
I
F
= 25 A
2.95
2.25
1.9
6
V
V
V
V
V
F
Forward on-voltage
I
F
= 25 A T
J
= 125 °C
I
F
= 25 A T
J
= 175 °C
V
CE
= V
GE
, I
C
= 1 mA
V
GE(th)
Gate threshold voltage
5
7
Collector cut-off current
(V
GE
= 0)
I
CES
V
CE
= 1200 V
V
GE
= ± 20 V
25
µA
nA
Gate-emitter leakage
I
GES
250
current (V
CE
= 0)
Table 5. Dynamic characteristics
Test conditions
Symbol
Parameter
Min. Typ.
Max. Unit
C
ies
Input capacitance
–
–
1600
125
–
–
pF
pF
C
oes
Output capacitance
V
V
CE
= 25
V
, f = 1 MHz,
GE
= 0
Reverse transfer
capacitance
C
res
–
61
–
pF
Q
g
Q
ge
Q
gc
T
o
tal gate charge
–
–
–
80
11
44
–
–
–
nC
nC
nC
V
CC
= 960
V
,
I
C
=25 A,
Gate-emitter charge
Gate-collector charge
V
4/18
DocID026374 Rev 2
STGW25S120DF3, STGWA25S120DF3
Electrical characteristics
Table 6. IGBT switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on delay time
Current rise time
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
31
11.8
1661
147
269
0.83
2.37
3.2
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
ns
ns
(di/dt)
on
Turn-on current slope
A/µs
ns
V
CE
= 600 V, I
C
=
25
A,
V
GE
= 15 V, R
G
= 15
Ω
t
d(off)
t
f
Turn-off delay time
Current fall time
ns
(1)
E
on
Turn-on switching losses
Turn-off switching losses
T
o
tal switching losses
Turn-on delay time
Current rise time
mJ
mJ
mJ
ns
(2)
E
off
E
ts
t
d(on)
t
r
28
15
ns
(di/dt)
on
Turn-on current slope
1360
156
437
1.52
3.36
4.88
A/µs
ns
V
CE
= 600 V, I
C
=
25
A,
R
G
= 15
Ω
,
V
GE
= 15 V,
t
d(off)
t
f
Turn-off delay time
Current fall time
ns
J
(1)
E
on
Turn-on switching losses
Turn-off switching losses
T
o
tal switching losses
mJ
mJ
mJ
(2)
E
off
E
ts
t
sc
V
CC
≤
600
V
,
V
GE
= 15V, T
Jstart
≤
150°C, V
P
< 1200V
Short-circuit withstand time
10
–
µs
1. Energy
losses include reverse recovery of the diode.
2. Turn-off
losses also include the tail of the collector current.
Table 7. Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min. Typ.
Max. Unit
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
–
–
–
265
1200
19
–
–
–
ns
nC
A
Q
rr
I
rrm
I
F
= 25 A, V
R
= 600
V
,
V
GE
= 15
V
,
di/dt = 1000 A/µs,
Peak rate of fall of reverse
recovery current during t
b
dl
rr/
/dt
–
1090
–
A/µs
E
rr
t
rr
Reverse recovery energy
Reverse recovery time
Reverse recovery charge
Reverse recovery current
–
–
–
–
0.22
584
5000
30
–
–
–
–
mJ
ns
nC
A
I
F
= 25 A, V
R
= 600
V
,
Q
rr
I
rrm
V
GE
= 15
V
,
T
J
= 175 °C,
di/dt = 1000 A/µs,
Peak rate of fall of reverse
recovery current during t
b
dI
rr/
/dt
E
rr
–
–
270
–
–
A/µs
mJ
Reverse recovery energy
0.75
DocID026374 Rev 2
5/18
18
Electrical characteristics
STGW25S120DF3, STGWA25S120DF3
2.1
Electrical characteristics (curves)
Figure 2. Power dissipation vs. case
temperature
Figure 3. Collector current vs. case temperature
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Figure 4. Output characteristics (T
J
= 25
°
C)
Figure 5. Output characteristics (T
J
= 175
°
C)
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Figure 6. V
CE(sat)
vs. junction temperature
Figure 7. V
CE(sat)
vs. collector current
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6/18
DocID026374 Rev 2
STGW25S120DF3, STGWA25S120DF3
Electrical characteristics
Figure 8. Collector current vs. switching
frequency
Figure 9. Forward bias safe operating area
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Figure 10. Transfer characteristics
Figure 11. Diode V
F
vs. forward current
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Figure 12. Normalized V
GE(th)
vs. junction
temperature
Figure 13. Normalized V
BR(CES)
vs. junction
temperature
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DocID026374 Rev 2
7/18
18
5
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Electrical characteristics
STGW25S120DF3, STGWA25S120DF3
Figure 14. Capacitance variations
Figure 15. Gate charge vs. gate-emitter voltage
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Figure 16. Switching loss vs. collector current
Figure 17. Switching loss vs. gate resistance
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Figure 18. Switching loss vs. temperature
Figure 19. Switching loss vs. collector emitter
voltage
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8/18
DocID026374 Rev 2
STGW25S120DF3, STGWA25S120DF3
Electrical characteristics
Figure 20. Short-circuit time and current vs V
GE
Figure 21. Switching times vs. collector current
*,3*ꢀꢆꢀꢁꢁꢆꢀꢌꢆꢎꢌꢋ/0
*,3*ꢆꢎꢀꢁꢁꢆꢀꢌꢀꢂꢌꢂ/0
W
W
6&
>V@
,VF
>$@
ꢀꢂꢉ
ꢄQVꢅ
W
I
ꢌꢆ
9
&&
ꢃꢇꢆꢆꢃ9ꢊꢃ7
ꢃꢀꢉꢆꢃ&
–
W
GꢄRIIꢅ
ꢀꢁꢆ
ꢂꢉ
,
6&
W
6&
ꢀꢆꢆ
ꢀꢆꢉ
ꢎꢆ
ꢂꢆ
ꢁꢉ
W
GꢄRQꢅ
ꢋꢉ
ꢁꢆ
ꢀꢉ
ꢀꢆ
ꢀ
ꢇꢆ
ꢌꢉ
ꢂꢆ
W
U
ꢀꢆ
ꢉ
5
7
ꢃꢀꢋ
ꢃꢃ&
M
ꢃ
9
&&
ꢃꢇꢆꢆꢃ9ꢊꢃ9
*(
ꢃ ꢃꢀꢉꢃ
9
ꢊ
ꢃ
*ꢃ ꢃꢀꢃꢃꢃ
ꢃ
ȍ
ꢃꢃ
ꢄ9ꢅ
ꢎ
ꢀꢌ
ꢀꢉ
ꢀꢁ
ꢀꢂ
9
*(
ꢀꢆ
ꢀꢀ
,
&
ꢄ$ꢅ
ꢆ
ꢁꢆ
ꢌꢆ
Figure 22. Switching times vs. gate resistance
Figure 23. Reverse recovery current vs. diode
current slope
*,3*ꢆꢎꢀꢁꢁꢆꢀꢌꢀꢁꢉꢍ/0
,
UUP
*,3*ꢆꢎꢀꢁꢁꢆꢀꢌꢀꢂꢁꢎ/0
W
ꢄ$ꢅ
ꢉꢉ
ꢄQVꢅ
,
9
&&
ꢃꢇꢆꢆꢃ9ꢊꢃ9
ꢃꢀꢉꢃ
9
ꢊ
ꢃ
ꢃ ꢃꢁ
ꢃꢃꢃꢃ
ꢃ
ꢊꢃꢃ7
ꢃꢀꢋ
ꢃꢃ&
*(
)
–
W
I
W
GꢄRIIꢅ
ꢌꢉ
ꢀꢆꢆ
W
GꢄRQꢅ
ꢂꢉ
ꢁꢉ
W
U
ꢀꢆ
ꢀ
,
9
&&
ꢃꢇꢆꢆꢃ9ꢊꢃ9
*(
ꢃ ꢃꢀꢉꢃ
9
ꢊ
ꢃ
ꢃꢀꢋ
ꢃꢃ&
)ꢃ ꢃꢁꢉꢃꢃꢃꢃ7
–
ꢀꢉ
ꢀꢌꢆꢆ
ꢁꢆꢆꢆ
GLꢐGWꢄ$ꢐVꢅ
ꢁꢆꢆ
ꢍꢆꢆ
5
*
ꢄȍꢅ
ꢆ
ꢁꢆ
ꢌꢆ
ꢇꢆ
Figure 24. Reverse recovery time vs. diode
Figure 25. Reverse recovery charge vs. diode
current slope
current slope
*,3*ꢆꢎꢀꢁꢁꢆꢀꢌꢀꢁꢌꢆ/0
*,3*ꢆꢎꢀꢁꢁꢆꢀꢌꢀꢁꢂꢀ/0
W
UU
4
UU
,
9
ꢃꢇꢆꢆꢃ9ꢊꢃ9
ꢃꢀꢉꢃ
9
ꢊ
ꢃ
ꢃ ꢃꢁ
ꢃꢃꢃꢃ
ꢃ
ꢊꢃꢃ7
ꢃꢀꢋ
ꢃꢃ&
&&
*(
)
–
ꢄQVꢅ
ꢄ&ꢅ
,
9
&&
ꢃꢇꢆꢆꢃ9ꢊꢃ9
*(
ꢃꢀꢉꢃ
9
ꢊ
ꢃ
)ꢃ ꢃꢁꢉꢃ$ꢃ7
M
ꢃꢀꢋꢉꢃꢃꢃ&
ꢉꢏꢁ
ꢋꢆꢆ
ꢉꢏꢆ
ꢌꢏꢍ
ꢇꢆꢆ
ꢉꢆꢆ
ꢌꢏꢇ
ꢌꢆꢆ
ꢂꢆꢆ
ꢌꢏꢌ
ꢌꢏꢁ
ꢁꢆꢆ
ꢀꢌꢆꢆ
ꢁꢆꢆꢆ
GLꢐGWꢄ$ꢐVꢅ
ꢁꢆꢆ
ꢍꢆꢆ
ꢀꢌꢆꢆ
ꢁꢆꢆꢆ
GLꢐGWꢄ$ꢐVꢅ
ꢍꢆꢆ
DocID026374 Rev 2
9/18
18
Electrical characteristics
STGW25S120DF3, STGWA25S120DF3
Figure 26. Reverse recovery energy vs. diode
current slope
*,3*ꢆꢎꢀꢁꢁꢆꢀꢌꢀꢁꢀꢍ/0
(
UU
ꢄP-ꢅ
,
9
&&
ꢃꢇꢆꢆꢃ9ꢊꢃ9
ꢃꢀꢉꢃ
9
ꢊ
ꢃ
ꢃ ꢃꢁ
ꢃꢃꢃꢃ
ꢃ
ꢊꢃꢃ7
ꢃꢀꢋ
ꢃꢃ&
*(
)
–
ꢀ
ꢆꢏꢍ
ꢆꢏꢇ
ꢆꢏꢌ
ꢁꢆꢆ
ꢀꢌꢆꢆ
ꢁꢆꢆꢆ
GLꢐGW>$ꢐV@
ꢍꢆꢆ
10/18
DocID026374 Rev 2
STGW25S120DF3, STGWA25S120DF3
Electrical characteristics
Figure 27. Thermal impedance for IGBT
=WK72ꢁ7B$
.
į ꢆꢏꢉ
ꢆꢏꢁ
ꢆꢏꢀ
ꢆꢏꢆꢉ
ꢆꢏꢆꢁ
ꢀꢆ
ꢈꢀ
ꢆꢏꢆꢀ
6LQJOHꢃSXOVH
ꢀꢆ
ꢈꢁ
ꢈꢉ
ꢈꢌ
ꢈꢂ
ꢀꢆ
ꢈꢁ
ꢀꢆ
ꢈꢀ
W
S
ꢄVꢅ
ꢀꢆ
ꢀꢆ
ꢀꢆ
Figure 28. Thermal impedance for diode
*&ꢁꢆꢎꢂꢆ
.
į ꢆꢏꢉ
ꢆꢏꢁ
ꢆꢏꢀ
ꢆꢏꢆꢉ
ꢆꢏꢆꢁ
ꢀꢆ
ꢈꢀ
ꢆꢏꢆꢀ
6LQJOHꢃSXOVH
ꢀꢆ
ꢈꢁ
ꢈꢉ
ꢈꢌ
ꢈꢂ
ꢀꢆ
ꢈꢁ
ꢀꢆ
ꢈꢀ
W
S
ꢄVꢅ
ꢀꢆ
ꢀꢆ
ꢀꢆ
DocID026374 Rev 2
11/18
18
Test circuits
STGW25S120DF3, STGWA25S120DF3
Figure 30. Gate charge test circuit
3
Test circuits
Figure 29. Test circuit for inductive load
switching
AM01504v1
AM01505v1
Figure 31. Switching waveform
Figure 32. Diode reverse recovery waveform
Q
rr
90%
di/dt
10%
V
G
I
F
t
rr
90%
10%
t
s
t
f
V
CE
T
r
(Voff)
Tcross
t
10% I
RRM
V
90%
10%
I
RRM
I
C
Td(off)
T
o
ff
Td(on)
T
o
n
Tf
RRM
T
r
(Ion)
dv/dt
AM01506v1
AM01507v1
12/18
DocID026374 Rev 2
STGW25S120DF3, STGWA25S120DF3
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
ECOPACK is an ST trademark.
4.1
TO-247, STGW25S120DF3
Figure 33. TO-247 outline
0075325_H
DocID026374 Rev 2
13/18
18
Package information
STGW25S120DF3, STGWA25S120DF3
Table 8. TO-247 mechanical data
mm.
Typ.
Dim.
Min.
Max.
A
A1
b
4.85
2.20
1.0
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
5.60
14.80
4.30
b1
b2
c
2.0
3.0
0.40
19.85
15.45
5.30
14.20
3.70
D
E
e
5.45
18.50
5.50
L
L1
L2
∅
P
∅
R
S
3.55
4.50
5.30
3.65
5.50
5.70
14/18
DocID026374 Rev 2
STGW25S120DF3, STGWA25S120DF3
Package information
4.2
TO-247 long leads, STGWA25S120DF3
Figure 34. TO-247 long lead outline
8463846_A_F
DocID026374 Rev 2
15/18
18
Package information
STGW25S120DF3, STGWA25S120DF3
Table 9. TO-247 long leads mechanical data
mm
Dim.
Min.
Typ.
Max.
A
A1
A2
b
4.90
2.31
1.90
1.16
5.00
2.41
2.00
5.10
2.51
2.10
1.26
3.25
2.25
0.66
21.10
15.90
5.10
2.60
5.54
20.10
4.30
3.70
6.00
6.25
b2
b3
c
0.59
20.90
15.70
4.90
D
21.00
15.80
5.00
E
E2
E3
e
2.40
2.50
5.34
5.44
L
19.80
19.92
L1
P
3.50
5.60
6.05
3.60
6.15
Q
S
16/18
DocID026374 Rev 2
STGW25S120DF3, STGWA25S120DF3
Revision history
5
Revision history
Table 10. Document revision history
Changes
Date
Revision
16-May-2014
1
Initial release.
18-Dec-2014
2
DocID026374 Rev 2
17/18
18
STGW25S120DF3, STGWA25S120DF3
IMPORTANT NOTICE – PLEASE READ CAREFUL
L
Y
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and
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ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order
acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or
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No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
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A
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© 2014 STMicroelectronics – All rights reserved
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DocID026374 Rev 2
