STMicroelectronics-STGWA30HP65FB2
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STGWA30HP65FB2
Datasheet
Trench gate field-stop, 650 V, 30 A, high-speed HB2 series IGBT
in a TO-247 long leads package
Features
•
•
•
•
•
•
•
Maximum junction temperature : T
J
= 175 °C
Low V
CE(sat)
= 1.65 V(typ.) @ I
C
= 30 A
Co-packaged protection diode
Minimized tail current
Tight parameter distribution
Low thermal resistance
Positive V
CE(sat)
temperature coefficient
C(2, TAB)
Applications
•
•
G(1)
Description
The newest IGBT 650 V HB2 series represents an evolution of the advanced
proprietary trench gate field-stop structure. The performance of the HB2 series is
optimized in terms of conduction, thanks to a better V
CE(sat)
behavior at low current
values, as well as in terms of reduced switching energy. A diode used for protection
purposes only is co-packaged in antiparallel with the IGB
T
.
T
he result is a product
specifically designed to maximize efficiency for a wide range of fast applications.
E(3)
NG1E3C2T
Product status link
Product summary
Order code
Marking
STGWA30HP65FB2
G30HP65FB2
TO-247 long leads
Tube
Package
Packing
DS13149
–
Rev 1
–
November 2019
For further information contact your local STMicroelectronics sales office.
STGWA30HP65FB2
Electrical ratings
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
V
V
CES
Collector-emitter voltage (V
= 0 V)
GE
650
Continuous collector current at T
= 25 °C
50
A
C
I
C
Continuous collector current at T
= 100 °C
30
A
C
I
Pulsed collector current
Gate-emitter voltage
90
A
CP
±20
V
V
A
GE
Transient gate-emitter voltage (t
≤ 10 μs)
±30
p
Continuous forward current at T
= 25 °C
5
5
C
I
F
Continuous forward current at T
= 100 °C
C
I
Pulsed forward current
10
A
FP
P
T
o
tal power dissipation at T
= 25 °C
167
W
°C
°C
TOT
C
T
Storage temperature range
-55 to 150
-55 to 175
STG
T
Operating junction temperature range
J
1. Pulse
width is limited by maximum junction temperature.
2. Defined
by design, not subject to production test.
Table 2.
Thermal data
Symbol
Parameter
Thermal resistance junction-case IGBT
Value
0.9
5
Unit
R
thJC
thJA
Thermal resistance junction-case diode
Thermal resistance junction-ambient
°C/W
R
50
DS13149
–
Rev 1
page 2/15
STGWA30HP65FB2
Electrical characteristics
2
Electrical characteristics
T
C
= 25 °C unless otherwise specified
Table 3.
Static characteristics
Test conditions
Symbol
Parameter
Min.
Typ. Max. Unit
Collector-emitter breakdown
voltage
V
V
= 0
V
, I
= 1
m
A
650
V
(BR)CES
GE
C
V
V
V
= 15
V
, I
=
3
0 A
1.65
1.85
2.0
2
2.1
2.8
GE
GE
GE
C
Collector-emitter saturation
voltage
V
= 15
V
, I
=
3
0 A, T
= 125 °C
V
V
CE(sat)
C
J
= 15
V
, I
=
3
0 A, T
= 175 °C
C
J
I =
5 A
F
V
I =
5 A, T
= 125 °C
F J
Forward on-voltage
1.85
1.75
6
F
I =
5 A, T
= 175 °C
F
J
V
V
CE
= V
, I
= 1 mA
Gate threshold voltage
Collector cut-off current
Gate-emitter leakage current
5
7
V
GE(th)
GE
C
I
V
GE
V
CE
= 0
V
, V
=
6
50 V
25
µA
nA
CES
GES
CE
I
= 0
V
, V
=
±
20 V
±250
GE
Table 4.
Dynamic characteristics
Test conditions
Symbol
Parameter
Input capacitance
Min.
Typ. Max. Unit
C
ies
–
–
–
–
–
–
1570
98
–
–
–
–
–
–
C
V
CE
= 25 V, f = 1 MHz, V
= 0 V
GE
Output capacitance
Reverse transfer capacitance
T
o
tal gate charge
pF
nC
oes
C
res
40
Q
90
g
V
= 520
V
, I
=
3
0 A, V
= 0 to 15 V
CC
C
GE
Q
Gate-emitter charge
Gate-collector charge
15.3
41.5
ge
Q
gc
Table 5.
Switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ. Max. Unit
t
V
V
= 400 V, I
= 30 A,
Turn-off delay time
Current fall time
–
–
71
41
–
–
ns
ns
d(off)
CC
GE
C
= 15
V
, R
=
6
.8 Ω
t
G
f
E
Turn-off switching energy
–
310
–
µJ
off
t
V
V
= 400 V, I
= 30 A,
Turn-off delay time
Current fall time
–
–
79
–
–
ns
ns
d(off)
CC
GE
C
= 15
V
, R
=
6
.8 Ω, T
= 175 °C
t
G
J
105
f
E
Turn-off switching energy
–
643
–
µJ
off
1. Including
the tail of the collector current.
DS13149
–
Rev 1
page 3/15
STGWA30HP65FB2
Electrical characteristics
Table 6.
Diode switching characteristics (inductive load)
Symbol
Parameter
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Peak rate of fall of reverse
Test conditions
Min.
Typ. Max. Unit
t
–
–
–
140
21
–
–
–
ns
nC
A
rr
Q
rr
I =
5 A, V
= 400
V
,
F
R
I
V
GE
= 15
V
,
d
i/dt = 1000 A/µs
6.6
rrm
dI /dt
rr
–
430
–
A/µs
recovery current during t
b
E
Reverse recovery energy
Reverse recovery time
–
–
–
–
1.6
200
47.3
9.6
–
–
–
–
µJ
ns
nC
A
rr
t
rr
I =
5 A, V
= 400
V
,
F
R
Q
Reverse recovery charge
Reverse recovery current
Peak rate of fall of reverse
rr
V
GE
= 15
V
,
d
i/dt = 1000 A/µs,
I
rrm
T =
175 °C
J
dI /dt
rr
–
–
428
3.2
–
–
A/µs
µJ
recovery current during t
b
E
rr
Reverse recovery energy
DS13149
–
Rev 1
page 4/15
STGWA30HP65FB2
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1.
Power dissipation vs case temperature
Figure 2.
Collector current vs case temperature
GADG111120191425PDT
GADG111120191426CCT
P
TOT
I
C
(W)
(A)
50
160
V
GE
≥
15 V
T
J
≤
175 °C
40
120
V
GE
≥
15 V
30
20
T
J
≤
175 °C
80
40
0
10
0
25
75
125
175
T
C
(°C)
25
75
125
175
T
C
(°C)
Figure 3.
Output characteristics (T
J
= 25 °C)
Figure 4.
Output characteristics (T
J
= 175 °C)
GADG111120191427OC25
GADG111120191428OC175
I
C
I
C
(A)
(A)
75
75
V
GE
= 13V
V
GE
= 13V
V
GE
= 15V
V
GE
= 11V
V
GE
= 15V
V
GE
= 11V
60
45
30
60
45
30
V
GE
= 9V
V
GE
= 9V
15
0
15
0
V
GE
= 7V
5
V
GE
= 7V
5
0
1
2
3
4
V
CE
(V)
0
1
2
3
4
V
CE
(V)
Figure 5.
V
CE(sat)
vs junction temperature
Figure 6.
V
CE(sat)
vs collector current
GADG111120191429VCET
GADG111120191430VCEC
V
CE(sat)
V
CE(sat)
(V)
(V)
V
GE
= 15 V
T
J
= 175°C
T
J
= 25°C
T
J
= -40°C
I
C
= 60 A
3.2
2.8
2.8
2.4
2.0
1.6
2.4
2.0
1.6
I
C
= 30 A
I
C
= 15 A
1.2
0.8
1.2
0.8
-50
0
50
100
150
T
J
(°C)
0
15
30
45
60
75
I
C
(A)
DS13149
–
Rev 1
page 5/15
STGWA30HP65FB2
Electrical characteristics (curves)
Figure 7.
Forward bias safe operating area
Figure 8.
Transfer characteristics
GADG111120191432SOA
I
C
(A)
GADG111120191435TCH
I
C
(A)
V
CE
= 6 V
75
60
45
30
100
t
p
=1µs
t
p
=10µs
10
1
Single pulse, T
C
=25°C,
V
GE
=15
V
,
T
J
≤
175 °C
T
J
= 175 °C
t
p
=100µs
T
J
= 25 °C
15
0
t
p
=1ms
V
CE
(V)
1
10
100
5
6
7
8
9
10
V
GE
(V)
Figure 10.
Normalized V
GE(th)
vs junction temperature
Figure 9.
Diode V
F
vs forward current
IGBT090420181403NVGE
V
GE(th)
(norm.)
IGBT090420181403DVF
V
F
(V)
T
J
= -40 °C
1.1
T
J
= 25 °C
2.4
V
CE
= V
GE
1.0
I
C
= 1 mA
T
J
= 175 °C
0.9
0.8
1.6
0.8
0.0
0.7
0.6
-50
0
50
100
150
T
J
(°C)
0
2
4
6
8
I
F
(A)
Figure 12.
Capacitance variations
Figure 11.
Normalized V
(BR)CES
vs junction temperature
GADG111120191436CVR
C
(pF)
IGBT090420181404NVBR
V
(BR)CES
(norm.)
f = 1 MHz
C
ies
1.08
1000
100
I
C
= 1 mA
1.04
1.00
C
oes
C
res
10
1
0.96
0.92
V
CE
(V)
-50
0
50
100
150
T
J
(°C)
0.1
1
10
100
DS13149
–
Rev 1
page 6/15
STGWA30HP65FB2
Electrical characteristics (curves)
Figure 13.
Gate charge vs gate-emitter voltage
Figure 14.
Switching energy vs collector current
GADG111120191438GCGE
GADG111120191438SLC
V
GE
(V)
E
(mJ)
V
CC
= 520
V
,
I
C
= 30 A, I
G
= 6 mA
V
CC
= 400 V, R
G
= 6.8 Ω,
V
GE
= 15
V
,
T
J
= 175 °C
1.4
15
1.2
1.0
0.8
0.6
0.4
12
9
E
off
6
3
0
0.2
0.0
0
20
40
60
80
100
Q
g
(nC)
0
10
20
30
40
50
60
I
C
(A)
Figure 15.
Switching energy vs temperature
Figure 16.
Switching energy vs collector emitter voltage
GADG111120191439SLT
GADG111120191440SLV
E
E
(mJ)
(mJ)
V
CC
= 400
V
,
I
C
= 30 A,
I
C
= 30 A, R
G
= 6.8 Ω,
R
G
= 6.8 Ω ,V
GE
= 15 V
0.8
V
GE
= 15
V
,
T
J
= 175 °C
0.8
0.6
E
off
E
off
0.6
0.4
0.4
0.2
0.2
0.0
0
50
100
150
T
J
(°C)
150
250
350
450
V
CE
(V)
Figure 17.
Switching energy vs gate resistance
Figure 18.
Switching times vs collector current
GADG211120191613STC
t
GADG111120191441SLG
E
(mJ)
(ns)
V
CC
= 400 V, V
GE
= 15
V
,
I
C
= 30 A, V
CC
= 300 V,
V
GE
= 15
V
,
T
J
= 175 °C
R
G
= 6.8 Ω, T
J
= 175 °C
0.9
E
OFF
0.8
0.7
t
f
100
t
d(off)
0.6
0.5
10
0
10
20
30
40
50
60
I
C
(A)
0
10
20
30
40
R
G
(Ω)
DS13149
–
Rev 1
page 7/15
STGWA30HP65FB2
Electrical characteristics (curves)
Figure 20.
Reverse recovery current vs diode current
slope
Figure 19.
Switching times vs gate resistance
GADG111120191443SLG
t
IGBT120120160800RRC
Irrm
(A)
(ns)
V
CC
= 400 V, V
GE
= 15
V
,
I
C
= 30 A, T
J
= 175 °C
V
CC
=400
V
,
V
GE
= 15
V
,
I
F
= 5 A, T
J
=175 °C
12
t
d(off)
10
8
t
f
100
6
4
2
0
10
0
10
20
30
40
R
g
(Ω)
0
300
600
900
1200 di/dt
(A/µs)
Figure 22.
Reverse recovery charge vs diode current
slope
Figure 21.
Reverse recovery time vs diode current slope
IGBT120120160820RRT
trr
(ns)
IGBT120120160824RRQ
Qrr
(µC)
V
CC
= 400 V, V
GE
= 15
V
,
I
F
= 5 A, T
J
= 175 °C
V
CC
= 400
V
,
V
GE
= 15
V
,
I
F
= 5 A, T
J
= 175 °C
350
50
300
250
200
48
46
150
100
44
42
0
300
600
900
1200
di/dt (A/μs)
0
300
600
900
1200
di/dt (A/µs)
Figure 23.
Reverse recovery energy vs diode current slope
IGBT120120160826RRE
Err
V
CC
= 400
V
,
V
GE
= 15
V
,
(μJ)
I
F
= 5 A, T
J
= 175 °C
5
4
3
2
0
300
600
900
1200 di/dt
(A/µs)
DS13149
–
Rev 1
page 8/15
STGWA30HP65FB2
Electrical characteristics (curves)
Figure 24.
Thermal impedance for IGBT
ZthTO2T_B
K
δ=0.5
0.2
0.1
0.05
10
-1
0.02
Zth=k Rthj-c
δ=tp/t
0.01
Single pulse
tp
t
10
-2
10
-5
10
-2
10
-4
10
-1
10
-3
t
p
(s)
Figure 25.
Thermal impedance for diode
DS13149
–
Rev 1
page 9/15
STGWA30HP65FB2
Test circuits
3
Test circuits
Figure 26.
Test circuit for inductive load switching
Figure 27.
Gate charge test circuit
V
CC
A
B
A
C
E
R
L
L
=
1
0
0
µ
H
G
B
V
i
≤
V
GMAX
I
G
= CONST
2.7 kΩ
100 Ω
D.U.
T
.
V
CC
3
.
3
µF
1000
µF
C
2200
μF
G
D
.
U
.
T
R
G
E
+
47 kΩ
–
1 kΩ
P
W
AM01504v1
GADG160420181048IG
Figure 29.
Diode reverse recovery waveform
Figure 28.
Switching waveform
di/dt
90%
10%
Q
rr
t
rr
V
G
I
F
t
s
t
f
90%
10%
V
CE
t
t
r(Voff)
t
cross
I
RRM
10%
I
RRM
90%
10%
V
RRM
t
d(off)
I
C
t
d(on)
t
on
t
f
t
r(Ion)
t
off
AM01506v1
dv/dt
GADG180720171418SA
DS13149
–
Rev 1
page 10/15
STGWA30HP65FB2
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
4.1
TO-247 long leads package information
Figure 30.
TO-247 long leads package outline
8463846_2_F
DS13149
–
Rev 1
page 11/15
STGWA30HP65FB2
TO-247 long leads package information
Table 7.
TO-247 long leads package mechanical data
mm
Typ.
5.00
2.41
2.00
Dim.
Min.
4.90
2.31
1.90
1.16
Max.
5.10
2.51
2.10
1.26
3.25
2.25
0.66
21.10
15.90
5.10
2.60
5.54
20.10
4.30
3.70
6.00
6.25
A
A1
A2
b
b2
b3
c
0.59
20.90
15.70
4.90
D
21.00
15.80
5.00
E
E2
E3
e
2.40
2.50
5.34
5.44
L
19.80
19.92
L1
P
3.50
5.60
6.05
3.60
6.15
Q
S
DS13149
–
Rev 1
page 12/15
STGWA30HP65FB2
Revision history
Table 8.
Document revision history
Changes
Date
Version
05-Nov-2019
1
First release.
DS13149
–
Rev 1
page 13/15
STGWA30HP65FB2
Contents
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
2
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
3
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10
Package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
TO-247 long leads package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
DS13149
–
Rev 1
page 14/15
STGWA30HP65FB2
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DS13149
–
Rev 1
page 15/15
