STMicroelectronics-STGWA50HP65FB2
| Part # | STMicroelectronics-STGWA50HP65FB2 |
Download  | STMicroelectronics-STGWA50HP65FB2 |
STGWA50HP65FB2
Datasheet
Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT
in a TO-247 long leads package
Features
•
•
•
•
•
•
•
Maximum junction temperature : T
J
= 175 °C
Low V
CE(sat)
= 1.55 V(typ.) @ I
C
= 50 A
Co-packaged protection diode
Minimized tail current
Tight parameter distribution
Low thermal resistance
Positive V
CE(sat)
temperature coefficient
C(2, TAB)
Applications
•
•
Welding
G(1)
Power factor correction
Description
The newest IGBT 650 V HB2 series represents an evolution of the advanced
proprietary trench gate field-stop structure. The performance of the HB2 series is
optimized in terms of conduction, thanks to a better V
CE(sat)
behavior at low current
values, as well as in terms of reduced switching energy. A diode used for protection
purposes only is co-packaged in antiparallel with the IGB
T
.
T
he result is a product
specifically designed to maximize efficiency for a wide range of fast applications.
E(3)
NG1E3C2T
Product status link
Product summary
Order code
Marking
STGWA50HP65FB2
G50HP65FB2
TO-247 long leads
Tube
Package
Packing
DS13184
–
Rev 1
–
December 2019
For further information contact your local STMicroelectronics sales office.
STGWA50HP65FB2
Electrical ratings
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
V
V
Collector-emitter voltage (V
= 0 V)
GE
650
CES
Continuous collector current at T
= 25 °C
86
A
C
I
C
Continuous collector current at T
= 100 °C
53
A
C
I
Pulsed collector current
Gate-emitter voltage
150
A
CP
±20
V
V
A
GE
Transient gate-emitter voltage (t
≤ 10 μs)
±30
p
Continuous forward current at T
= 25 °C
5
5
C
I
F
Continuous forward current at T
= 100 °C
C
I
Pulsed forward current
10
A
FP
P
T
o
tal power dissipation at T
= 25 °C
272
W
°C
°C
TOT
C
T
Storage temperature range
-55 to 150
-55 to 175
STG
T
Operating junction temperature range
J
1. Pulse
width is limited by maximum junction temperature.
2. Defined
by design, not subject to production test.
Table 2.
Thermal data
Symbol
Parameter
Value
0.55
5
Unit
Thermal resistance junction-case IGBT
Thermal resistance junction-case diode
Thermal resistance junction-ambient
R
thJC
thJA
°C/W
R
50
DS13184
–
Rev 1
page 2/15
STGWA50HP65FB2
Electrical characteristics
2
Electrical characteristics
T
C
= 25 °C unless otherwise specified
Table 3.
Static characteristics
Test conditions
Symbol
Parameter
Min.
Typ.
Max.
Unit
Collector-emitter breakdown
voltage
V
V
= 0
V
, I
= 1
m
A
650
V
(BR)CES
GE
C
V
V
= 15
V
, I
=
5
0 A
1.55
1.8
2
GE
C
= 15
V
, I
=
5
0 A,
GE
C
Collector-emitter saturation
voltage
V
T =
125 °C
J
V
V
CE(sat)
V
= 15
V
, I
=
5
0 A,
C
GE
1.9
T =
175 °C
J
I =
5 A
F
2
2.8
V
I =
5 A, T
= 125 °C
F
Forward on-voltage
1.85
1.75
6
F
J
I =
5 A, T
= 175 °C
F
J
V
V
= V
, I
= 1 mA
Gate threshold voltage
Collector cut-off current
Gate-emitter leakage current
5
7
V
GE(th)
CE
GE
C
I
V
V
= 0
V
, V
=
6
50 V
25
µA
nA
CES
GES
GE
CE
CE
I
= 0
V
, V
=
±
20 V
±250
GE
Table 4.
Dynamic characteristics
Test conditions
Symbol
Parameter
Input capacitance
Min.
Typ.
2928
162
78
Max.
Unit
C
–
–
–
–
–
–
–
–
–
–
–
–
ies
V
V
= 25
V
, f = 1
M
Hz,
= 0 V
CE
C
oes
Output capacitance
pF
GE
C
res
Reverse transfer capacitance
T
o
tal gate charge
Q
151
30
g
V
V
= 520
V
, I
=
5
0 A,
CC
C
Q
Gate-emitter charge
Gate-collector charge
= 0 to 15 V
nC
ge
GE
Q
gc
63
DS13184
–
Rev 1
page 3/15
STGWA50HP65FB2
Electrical characteristics
Table 5.
Switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
115
40
Max.
Unit
ns
t
V
V
= 400 V, I
= 50 A,
Turn-off delay time
Current fall time
–
–
–
–
d(off)
CC
GE
C
= 15
V
, R
=
4
.7 Ω
t
G
ns
f
E
Turn-off switching energy
–
580
–
µJ
off
t
V
V
= 400 V, I
= 50 A,
Turn-off delay time
Current fall time
–
–
135
90
–
–
ns
ns
d(off)
CC
GE
C
= 15
V
, R
=
4
.7 Ω,
t
G
f
T =
175 °C
J
E
Turn-off switching energy
–
1090
–
µJ
off
1. Including
the tail of the collector current.
Table 6.
Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
140
21
Max.
Unit
ns
t
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Peak rate of fall of reverse
–
–
–
–
–
–
rr
Q
nC
A
rr
I =
5 A, V
= 400
V
,
F
R
I
V
GE
= 15
V
,
d
i/dt = 1000 A/µs
6.6
rrm
dI /dt
rr
–
430
–
A/µs
recovery current during t
b
E
Reverse recovery energy
Reverse recovery time
–
–
–
–
1.6
200
47.3
9.6
–
–
–
–
µJ
ns
nC
A
rr
t
rr
I =
5 A, V
= 400
V
,
F
R
Q
Reverse recovery charge
Reverse recovery current
Peak rate of fall of reverse
rr
V
GE
= 15
V
,
d
i/dt = 1000 A/µs,
I
rrm
T =
175 °C
J
dI /dt
rr
–
–
428
3.2
–
–
A/µs
µJ
recovery current during t
b
E
Reverse recovery energy
rr
DS13184
–
Rev 1
page 4/15
STGWA50HP65FB2
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1.
Power dissipation vs case temperature
Figure 2.
Collector current vs case temperature
GADG041220191034PDT
GADG041220191035CCT
P
TOT
(W)
I
C
(A)
≤
≥
V
GE
≥
15
V
,
T
J
≤
175 °C
250
80
200
150
100
60
40
20
0
50
0
25
75
125
175
T
C
(°C)
25
75
125
175
T
C
(°C)
Figure 3.
Output characteristics (T
J
= 25 °C)
Figure 4.
Output characteristics (T
J
= 175 °C)
GADG041220191035OC25
GADG041220191036OC175
I
C
I
C
(A)
(A)
V
GE
= 13 V
V
GE
= 11 V
V
GE
= 11 V
125
100
75
125
100
75
V
GE
= 13 V
V
GE
= 15 V
V
GE
= 9 V
V
GE
= 15 V
V
GE
= 9 V
50
50
25
0
25
0
V
GE
= 7 V
V
GE
= 7 V
5
0
1
2
3
4
V
CE
(V)
0
1
2
3
4
5
V
CE
(V)
Figure 5.
V
CE(sat)
vs junction temperature
Figure 6.
V
CE(sat)
vs collector current
GADG041220191036VCET
GADG041220191037VCEC
V
CE(SAT)
V
CE(SAT)
V
GE
= 15 V
(V)
(V)
V
GE
= 15 V
3.2
2.6
I
C
= 100 A
2.8
2.4
2.0
1.6
1.2
T
J
= 175 °C
T
J
= 25 °C
2.3
2.0
1.7
1.4
I
C
= 50 A
T
J
= -40 °C
I
C
= 25 A
1.1
0.8
0.8
0.4
-50
0
50
100
150
T
J
(°C)
0
25
50
75
100 125
I
C
(A)
DS13184
–
Rev 1
page 5/15
STGWA50HP65FB2
Electrical characteristics (curves)
Figure 8.
Transfer characteristics
Figure 7.
Forward bias safe operating area
IGBT061220191241FSOA
I
C
GADG041220191038TCH
I
C
(A)
(A)
V
CE
= 6 V
125
100
75
10
2
t
p
= 1 µs
t
p
= 10 µs
10
1
t
p
= 100 µs
50
T
j
= 175 °C
Single pulse, T
C
= 25 °C,
t
p
= 1 ms
V
CE
(V)
T
J
≤
175 °C, V
GE
= 15 V
25
0
T
j
= 25 °C
10
0
10
0
10
1
10
2
4
6
8
10
V
GE
(V)
Figure 9.
Diode V
F
vs forward current
Figure 10.
Normalized V
GE(th)
vs junction temperature
IGBT090420181403DVF
GADG300120191024NVGE
V
F
V
GE(th)
(V)
(norm.)
T
J
= -40 °C
1.1
T
J
= 25 °C
2.4
V
CE
= V
GE
I
C
= 1 mA
1.0
T
J
= 175 °C
1.6
0.9
0.8
0.8
0.0
0.7
0.6
0
2
4
6
8
I
F
(A)
-50
0
50
100
150
T
J
(°C)
Figure 12.
Capacitance variations
Figure 11.
Normalized V
(BR)CES
vs junction temperature
GADG300120191024NVBR
V
(BR)CES
GADG041220191039CVR
C
(pF)
(norm.)
I
C
= 1 mA
1.08
C
ies
10
3
1.04
1.00
10
2
0.96
0.92
f = 1 MHz
C
oes
C
res
-50
0
50
100
150
T
J
(°C)
10
1
10
-1
10
0
10
1
10
2
V
CE
(V)
DS13184
–
Rev 1
page 6/15
STGWA50HP65FB2
Electrical characteristics (curves)
Figure 13.
Gate charge vs gate-emitter voltage
Figure 14.
Switching energy vs collector current
GADG091220190907GCGE
GADG041220191040SLC
V
GE
E
(mJ)
V
CC
= 520
V
,
I
C
= 50 A, I
G
= 12 mA
(V)
V
CC
= 400
V
,
R
G
= 4.7 Ω,
V
GE
= 15 V, T
J
=175
℃
15
12
9
2.5
2.0
1.5
1.0
E
off
6
3
0
0.5
0.0
0
40
80
120
160
Q
g
(nC)
0
20
40
60
80
100
I
C
(A)
Figure 15.
Switching energy vs temperature
Figure 16.
Switching energy vs collector emitter voltage
GADG041220191041SLT
GADG041220191041SLV
E
(mJ)
E
(mJ)
A
4.7
V
CC
= 400
V
,
I
C
= 50 A, R
g
= 4.7 Ω, V
GE
= 15 V
1.2
1.5
1.0
0.8
E
off
E
off
1.0
0.5
0.0
0.6
0.4
0
50
100
150
150
250
350
450
V
CE
(V)
T
J
(°C)
Figure 17.
Switching energy vs gate resistance
Figure 18.
Switching times vs collector current
GADG041220191042SLG
IGBT061220191058STC
E
t
(mJ)
(ns)
V
CC
= 400
V
,
R
G
= 4.7 Ω,
V
GE
= 15
V
,
T
J
=175
℃
2.0
t
d(off)
E
off
1.5
10
2
1.0
t
f
0.5
0.0
10
1
0
10
20
30
40
R
G
(Ω)
0
20
40
60
80
100
I
C
(A)
DS13184
–
Rev 1
page 7/15
STGWA50HP65FB2
Electrical characteristics (curves)
Figure 20.
Reverse recovery current vs diode current
slope
Figure 19.
Switching times vs gate resistance
GADG041220191043STR
t
IGBT120120160800RRC
Irrm
(A)
(ns)
V
CC
=400
V
,
V
GE
= 15
V
,
I
F
= 5 A, T
J
=175 °C
12
t
d(off)
10
8
10
2
t
f
6
4
2
0
10
1
0
10
20
30
40
R
G
(Ω)
0
300
600
900
1200 di/dt
(A/µs)
Figure 22.
Reverse recovery charge vs diode current
slope
Figure 21.
Reverse recovery time vs diode current slope
IGBT120120160820RRT
trr
IGBT120120160824RRQ
Qrr
(µC)
(ns)
V
CC
= 400 V, V
GE
= 15
V
,
I
F
= 5 A, T
J
= 175 °C
V
CC
= 400
V
,
V
GE
= 15
V
,
I
F
= 5 A, T
J
= 175 °C
350
50
300
250
200
48
46
150
100
44
42
0
300
600
900
1200
di/dt (A/μs)
0
300
600
900
1200
di/dt (A/µs)
Figure 23.
Reverse recovery energy vs diode current slope
IGBT120120160826RRE
Err
V
CC
= 400
V
,
V
GE
= 15
V
,
(μJ)
I
F
= 5 A, T
J
= 175 °C
5
4
3
2
0
300
600
900
1200 di/dt
(A/µs)
DS13184
–
Rev 1
page 8/15
STGWA50HP65FB2
Electrical characteristics (curves)
Figure 24.
Thermal impedance for IGBT
ZthTO2T_B
K
δ=0.5
0.2
0.1
0.05
10
-1
0.02
Zth=k Rthj-c
δ=tp/t
0.01
Single pulse
tp
t
10
-2
10
-5
10
-2
10
-4
10
-1
10
-3
t
p
(s)
Figure 25.
Thermal impedance for diode
DS13184
–
Rev 1
page 9/15
STGWA50HP65FB2
Test circuits
3
Test circuits
Figure 26.
Test circuit for inductive load switching
Figure 27.
Gate charge test circuit
V
CC
A
B
A
C
E
R
L
L
=
1
0
0
µ
H
G
B
V
i
≤
V
GMAX
I
G
= CONST
2.7 kΩ
100 Ω
D.U.
T
.
V
CC
3
.
3
µF
1000
µF
C
2200
μF
G
D
.
U
.
T
R
G
E
+
47 kΩ
–
1 kΩ
P
W
AM01504v1
GADG160420181048IG
Figure 29.
Diode reverse recovery waveform
Figure 28.
Switching waveform
di/dt
90%
10%
Q
rr
t
rr
V
G
I
F
t
s
t
f
90%
10%
V
CE
t
t
r(Voff)
t
cross
I
RRM
10%
I
RRM
90%
10%
V
RRM
t
d(off)
I
C
t
d(on)
t
on
t
f
t
r(Ion)
t
off
AM01506v1
dv/dt
GADG180720171418SA
DS13184
–
Rev 1
page 10/15
STGWA50HP65FB2
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
4.1
TO-247 long leads package information
Figure 30.
TO-247 long leads package outline
8463846_2_F
DS13184
–
Rev 1
page 11/15
STGWA50HP65FB2
TO-247 long leads package information
Table 7.
TO-247 long leads package mechanical data
mm
Typ.
5.00
2.41
2.00
Dim.
Min.
4.90
2.31
1.90
1.16
Max.
5.10
2.51
2.10
1.26
3.25
2.25
0.66
21.10
15.90
5.10
2.60
5.54
20.10
4.30
3.70
6.00
6.25
A
A1
A2
b
b2
b3
c
0.59
20.90
15.70
4.90
D
21.00
15.80
5.00
E
E2
E3
e
2.40
2.50
5.34
5.44
L
19.80
19.92
L1
P
3.50
5.60
6.05
3.60
6.15
Q
S
DS13184
–
Rev 1
page 12/15
STGWA50HP65FB2
Revision history
Table 8.
Document revision history
Date
05-Dec-2019
Version
Changes
1
First release.
DS13184
–
Rev 1
page 13/15
STGWA50HP65FB2
Contents
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
2
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
3
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10
Package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
TO-247 long leads package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
DS13184
–
Rev 1
page 14/15
STGWA50HP65FB2
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST
products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST
products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of S
T
.
F
or additional information about ST trademarks, please refer to
www.st.com/trademarks
. All other product or service
names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2019 STMicroelectronics – All rights reserved
DS13184
–
Rev 1
page 15/15
