STMicroelectronics-STGWT30HP65FB
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STGWT30HP65FB
Datasheet
Trench gate field-stop 650 V, 30 A high speed HB series IGBT
Features
TAB
•
•
•
•
•
•
•
•
•
Maximum junction temperature: T
J
= 175 °C
High speed switching series
Minimized tail current
3
2
Low saturation voltage: V
CE(sat)
= 1.6 V (typ.) @ I
C
= 40 A
Tight parameter distribution
1
TO-3P
Safe paralleling
Positive V
CE(sat)
temperature coefficient
Low thermal resistance
C(2, TAB)
Very fast soft recovery antiparallel diode
G(1)
Applications
•
Power factor corrector (PFC)
E(3)
NG1E3C2T
Description
This device is an IGBT developed using an advanced proprietary trench gate field-
stop structure. The device is part of the new HB series of IGB
T
s
, which represents an
optimum compromise between conduction and switching loss to maximize the
efficiency of any frequency converter. Furthermore, the slightly positive V
CE(sat)
temperature coefficient and very tight parameter distribution result in safer paralleling
operation.
Product status link
Product summary
Order code
Marking
STGWT30HP65FB
GWT30HP65FB
TO-3P
Package
Packing
Tube
DS11375
–
Rev 3
–
July 2019
For further information contact your local STMicroelectronics sales office.
STGWT30HP65FB
Electrical ratings
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
V
CES
Collector-emitter voltage (V
= 0 V)
GE
650
V
Continuous collector current at T
= 25 °C
60
C
I
A
A
V
C
Continuous collector current at T
= 100 °C
30
C
I
Pulsed collector current
Gate-emitter voltage
120
CP
±20
V
I
GE
Transient gate-emitter voltage (t
≤ 10 μs)
±30
p
Continuous forward current at T
= 25 °C
5
5
C
A
F
Continuous forward current at T
= 100 °C
C
I
Pulsed forward current
10
A
FP
P
T
o
tal power dissipation at T
= 25 °C
260
W
TOT
C
T
Storage temperature range
-55 to 150
-55 to 175
STG
°C
T
Operating junction temperature range
J
1. Pulse
width limited by maximum junction temperature.
2. Limited
by wires.
3. Pulsed
forward current.
Table 2.
Thermal data
Symbol
Parameter
Thermal resistance junction-case IGBT
Value
0.58
5
Unit
R
thJC
R
thJC
Thermal resistance junction-case diode
Thermal resistance junction-ambient
°C/W
R
50
thJA
DS11375
–
Rev 3
page 2/15
STGWT30HP65FB
Electrical characteristics
2
Electrical characteristics
T
C
= 25 °C unless otherwise specified
Table 3.
Static characteristics
Test conditions
Symbol
Parameter
Min.
650
Typ. Max. Unit
Collector-emitter breakdown
voltage
V
V
= 0
V
, I
= 2
m
A
V
(BR)CES
GE
C
V
V
V
= 15
V
, I
=
3
0 A
1.55
1.65
1.75
2.0
2.0
GE
GE
GE
C
Collector-emitter saturation
voltage
V
= 15
V
, I
=
3
0 A, T
= 125 °C
V
V
CE(sat)
C
J
= 15
V
, I
=
3
0 A, T
= 175 °C
C
J
I =
5 A
F
V
I =
5 A, T
= 125 °C
F J
Forward on-voltage
1.85
1.75
6
F
I =
5 A, T
= 175 °C
F
J
V
V
CE
= V
, I
= 1 mA
Gate threshold voltage
Collector cut-off current
Gate-emitter leakage current
5
7
V
GE(th)
GE
C
I
V
GE
V
CE
= 0
V
, V
=
6
50 V
25
µA
nA
CES
GES
CE
I
= 0
V
, V
=
±
20 V
±250
GE
Table 4.
Dynamic characteristics
Test conditions
Symbol
Parameter
Input capacitance
Min.
Typ. Max. Unit
C
ies
–
–
–
–
–
–
3659
101
76
–
–
–
–
–
–
C
V
CE
= 25 V, f = 1 MHz, V
= 0 V
GE
Output capacitance
Reverse transfer capacitance
T
o
tal gate charge
pF
nC
oes
C
res
Q
149
25
g
V
= 520
V
, I
=
3
0 A, V
= 0 to 15 V
CC
C
GE
Q
Gate-emitter charge
Gate-collector charge
ge
Q
62
gc
Table 5.
IGBT switching characteristics (inductive load)
Symbol
Parameter
Turn-off-delay time
Test conditions
Min.
Typ. Max. Unit
t
V
= 400 V, I
= 30 A, V
= 15 V,
–
–
146
23
–
–
ns
ns
d(off)
CE
C
GE
R
= 10 Ω
t
G
Current fall time
f
E
Turn-off switching energy
–
293
–
µJ
off
t
V
= 400 V, I
= 30 A, V
= 15 V,
Turn-off-delay time
Current fall time
–
–
158
65
–
–
ns
ns
d(off)
CE
C
GE
R
= 10 Ω, T
= 175 °C
t
G
J
f
E
Turn-off switching energy
–
572
–
µJ
off
1. Including
the tail of the collector current.
DS11375
–
Rev 3
page 3/15
STGWT30HP65FB
Electrical characteristics
Table 6.
Diode switching characteristics (inductive load)
Symbol
Parameter
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Peak rate of fall of reverse
Test conditions
Min.
Typ. Max. Unit
t
–
–
–
140
21
–
–
–
ns
nC
A
rr
Q
rr
I =
5 A, V
= 400
V
, V
=
1
5
V
,
F
R
GE
I
6.6
di/dt = 1000 A/µs
rrm
dI /dt
rr
–
430
–
A/µs
recovery current during t
b
E
Reverse recovery energy
Reverse recovery time
–
–
–
–
1.6
200
47.3
9.6
–
–
–
–
µJ
ns
nC
A
rr
t
rr
Q
Reverse recovery charge
Reverse recovery current
Peak rate of fall of reverse
rr
I =
5 A, V
= 400
V
, V
=
1
5
V
,
F
R
GE
I
di/dt = 1000 A/µs, T
= 175 °C
rrm
J
dI /dt
rr
–
–
428
3.2
–
–
A/µs
µJ
recovery current during t
b
E
rr
Reverse recovery energy
DS11375
–
Rev 3
page 4/15
STGWT30HP65FB
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1.
Output characteristics (T
J
= 25 °C)
Figure 2.
Output characteristics (T
J
= 175 °C)
GIPG280120141156FSR
GIPG280120141206FSR
I
C
(A)
I
C
(A)
V
GE
=15 V
V
GE
=15 V
V
GE
=13 V
V
GE
=13 V
100
100
V
GE
=11 V
V
GE
=11 V
80
60
80
60
40
V
GE
=9 V
V
GE
=9 V
40
20
20
0
V
GE
=7 V
V
CE
(V)
V
GE
=7 V
V
CE
(V)
0
0
1
2
3
4
5
0
1
2
3
4
5
Figure 3.
Transfer characteristics
Figure 4.
Collector current vs case temperature
GIPG280120141346FSR
GIPG280120141330FSR
I
C
(A)
I
C
(A)
V
CE
= 6 V
60
100
80
40
20
T
j
= 175 °C
60
T
j
= 25 °C
40
20
0
V
GE
≥
15
V
,
T
J
≤
175 °C
0
T
C
(°C)
25 50 75
100 125 150 175
0
5
7
9
11
V
GE
(V)
Figure 5.
V
CE(sat)
vs junction temperature
Figure 6.
Total power dissipation vs case temperature
GIPG280120141353FSR
GIPG280120141440FSR
P
tot
(W)
V
CE(sat)
(V)
V
GE
= 15 V
2.2
250
I
C
= 60 A
200
150
100
50
2.0
1.8
I
C
= 30 A
I
C
= 15 A
1.6
1.4
1.2
V
GE
≥
15
V
,
T
J
≤
175 °C
0
0
175
25 50 75
100 125 150
-50
0
50
100
150
T
C
(°C)
T
J
(°C)
DS11375
–
Rev 3
page 5/15
STGWT30HP65FB
Electrical characteristics (curves)
Figure 7.
Forward bias safe operating area
Figure 8.
Collector current vs switching frequency
GIPG280120141450FSR
GIPG280120141713FSR
I
C
I
C
(A)
(A)
V
ce(sat)
limit
80
T
C
= 80 °C
100
60
10 μs
10
100 μs
T
C
= 100 °C
40
1 ms
1
20
(single pulse T
= 25 °C,
Rectangular current shape
(duty cycle = 0.5, V
CC
= 400
V
,
c
T
J
≤
175 °C, V
= 15 V)
GE
R
G
= 10 Ω, V
GE
= 0/15 V , T
j
= 175 °C
0.1
0
1
10
100
10
0
10
1
10
2
V
CE
(V)
f (kHz)
Figure 9.
Normalized V
GE(th)
vs junction temperature
Figure 10.
Normalized V
(BR)CES
vs junction temperature
AM16060v1
AM16059v1
V
GE(th)
V
(BR)CES
(norm)
(norm)
V
CE
= V
GE
, I
C
= 1 mA
I
C
= 2 mA
1.1
1.0
0.9
0.8
0.7
1.0
0.9
0.6
-50
T
J
(°C)
T
J
(°C)
0
50
100
150
-50
0
50
100
150
Figure 11.
Switching energy vs temperature
Figure 12.
Switching energy vs gate resistance
GIPG280120141531FSRb
GIPG280120141535FSRb
E
E
(µJ)
(µJ)
V
CC
= 400
V
,
V
GE
= 15
V
,
I
C
= 30 A, T
J
= 175 °C
V
CC
= 400 V, V
GE
= 15
V
,
R
g
= 10 Ω, I
C
= 30 A,
1020
E
OFF
E
OFF
600
820
620
420
220
20
400
200
0
3
10
17
24
31
R
G
(Ω)
45
20 40
60 80 100
120
T
J
(°C)
38
140 160
DS11375
–
Rev 3
page 6/15
STGWT30HP65FB
Electrical characteristics (curves)
Figure 13.
Switching energy vs collector current
Figure 14.
Switching energy vs collector emitter voltage
GIPG280120141605FSRb
GIPG280120141609FSRb
E
(µJ)
E
(µJ)
T
J
= 175 °C, V
GE
= 15 V
V
CC
= 400
V
,
V
GE
= 15 V
1200
1000
800
600
400
200
0
R
g
= 10 Ω, T
J
= 175 °C
R
g
= 10 Ω, I
C
= 30 A
800
E
OFF
E
OFF
600
400
200
0
I
C
(A)
150
250
350
450
V
CE
(V)
0
20
40
60
Figure 15.
Switching times vs collector current
Figure 16.
Switching times vs gate resistance
GIPG100720141533FSRb
GIPG100720141549FSRb
t
t
(ns)
(ns)
T
J
= 175 °C, V
GE
= 15
V
,
R
G
= 10 Ω, V
CC
= 400 V
T
J
= 175 °C, V
GE
= 15 V,
I
C
= 30 A, V
CC
= 400 V
t
doff
t
doff
t
f
100
100
10
1
t
f
10
R
G
(Ω)
30
I
C
(A)
0
10
50
0
10
20
30
40
20
40
Figure 18.
V
CE(sat)
vs collector current
Figure 17.
Capacitance variations
GIPG090720141358FSR
GIPG280120141446FSR
C
(pF)
V
CE(sat)
(V)
V
GE
= 15 V
2.4
C
ies
2.2
2.0
1.8
1.6
1000
T
J
= 175 °C
T
J
= 25 °C
T
J
= -40 °C
100
10
C
oes
1.4
1.2
C
res
100
0.1
1
10
V
CE
(V)
I
C
(A)
15
30
45
60
DS11375
–
Rev 3
page 7/15
STGWT30HP65FB
Electrical characteristics (curves)
Figure 20.
Diode V
F
vs forward current
Figure 19.
Gate charge vs gate-emitter voltage
GIPG280120141455FSR
V
GE
IGBT110120161316DVF
V
F
(V)
(V)
V
CC
= 520
V
,
I
C
= 30 A
16
I
G
= 1mA
14
T
j
= -40 °C
T
j
= 25 °C
2.6
2.0
1.4
12
10
8
T
j
= 175 °C
6
4
0.8
0.2
2
0
0
Qg (nC)
80
120
160
40
0
2
4
6
8
10
I
F
(A)
Figure 21.
Reverse recovery current vs diode current
slope
Figure 22.
Reverse recovery time vs diode current slope
IGBT120120160820RRT
trr
(ns)
IGBT020820161120RRC
I
rrm
(A)
V
CC
= 400
V
,
V
GE
= 15
V
,
I
F
= 5 A, T
j
= 175 °C
V
CC
= 400 V
350
12
V
GE
= 15
V
,
I
F
= 5 A
T
J
= 175 °C
10
300
250
200
8
6
4
150
100
2
0
0
300
600
900
1200
di/dt (A/μs)
0
300
600
900
1200
di/dt(A/μs)
Figure 23.
Reverse recovery charge vs diode current
slope
Figure 24.
Reverse recovery energy vs diode current
slope
IGBT020820161204RRQ
rr
IGBT020820161239RRE
rr
V
CC
= 400 V,V
GE
= 15
V
,
I
F
= 5 A,
T
J
= 175 °C
55
50
45
40
35
V
CC
=400
V
,
V
GE
=15 V
I
F
= 5 A
,
T
J
=175 °C
0.5
0.48
0.46
0.44
30
25
0
300
600
900
1200
0
300
600
900
1200
di/dt(A/µs)
di/dt(A/μs)
DS11375
–
Rev 3
page 8/15
STGWT30HP65FB
Electrical characteristics (curves)
Figure 25.
Thermal impedance for IGBT
ZthTO2T_B
K
10
-1
10
-2
δ=0.5
0.2
0.1
0.05
0.02
Zth=k Rthj-c
δ=tp/t
0.01
Single pulse
10
-4
tp
t
10
-2
10
-5
10
-3
10
-1
t
p
(s)
DS11375
–
Rev 3
page 9/15
STGWT30HP65FB
Test circuits
3
Test circuits
Figure 26.
Test circuit for inductive load switching
Figure 27.
Gate charge test circuit
A
B
A
C
E
k
L
=
1
0
0
µ
H
k
G
B
V
CC
3
.
3
µF
1000
µF
C
k
G
D
.
U
.
T
k
R
G
E
+
k
–
k
AM01505v1
AM01504v1
Figure 28.
Switching waveform
90%
10%
V
G
90%
10%
V
CE
t
r(Voff)
t
cross
90%
10%
t
d(off)
t
off
I
C
t
d(on)
t
on
t
f
t
r(Ion)
AM01506v1
DS11375
–
Rev 3
page 10/15
STGWT30HP65FB
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
4.1
TO-3P package information
Figure 29.
TO-3P package outline
8045950_3
DS11375
–
Rev 3
page 11/15
STGWT30HP65FB
TO-3P package information
Table 7.
TO-3P package mechanical data
mm
Dim.
Min.
4.60
1.45
1.20
0.80
1.80
2.80
0.55
19.70
13.70
15.40
13.40
9.40
5.15
19.80
3.30
18.20
3.30
3.10
4.80
3.60
Typ.
4.80
1.50
1.40
1.00
2.00
3.00
0.60
19.90
13.90
15.60
13.60
9.60
5.45
20.00
3.50
18.40
3.40
3.20
5.00
3.80
Max.
5.00
1.65
1.60
1.20
2.20
3.20
0.75
20.10
14.10
15.80
13.80
9.90
5.75
20.20
3.70
18.60
3.50
3.30
5.20
4.00
A
A1
A2
b
b1
b2
c
D
D1
E
E1
E2
e
L
L1
L2
ØP
ØP1
Q
Q1
DS11375
–
Rev 3
page 12/15
STGWT30HP65FB
Revision history
Table 8.
Document revision history
Changes
Date
Revision
11-Nov-2015
1
First release
Datasheet status promoted from preliminary to production data.
Updated
Features
on cover page.
20-Jan-2017
09-Jul-2019
2
3
Updated
Section 1: “Electrical ratings”
and
Section 2: “Electrical characteristics”
.
Minor text changes.
Minor text changes.
DS11375
–
Rev 3
page 13/15
STGWT30HP65FB
Contents
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
2
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
3
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10
Package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
TO-3P package informatio
n
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
DS11375
–
Rev 3
page 14/15
STGWT30HP65FB
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DS11375
–
Rev 3
page 15/15
