STMicroelectronics-STGYA50H120DF2
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STG
Y
A
50H120DF2
Datasheet
Trench gate field-stop, 1200 V, 50 A, high-speed H series IGBT
in a Max247 long leads package
Features
•
•
•
•
•
•
•
Maximum junction temperature: T
J
= 175 °C
5 μs of short-circuit withstand time
Low V
CE(sat)
= 2.1 V (typ.) @ I
C
= 50 A
Tight parameter distribution
3
2
TAB
1
Positive V
CE(sat)
temperature coefficient
Low thermal resistance
1
Very fast recovery antiparallel diode
2
3
Max247 long leads
Applications
•
•
•
•
C(2, TAB)
G(1)
Description
This device is IGBT developed using an advanced proprietary trench gate field-
stop structure. This device is part of the H series of IGB
T
s
, which represent
an optimum compromise between conduction and switching losses to maximize
the efficiency of high switching frequency converters. Moreover, a slightly positive
V
CE(sat)
temperature coefficient and very tight parameter distribution result in safer
paralleling operation.
E(3)
NG1E3C2T
Product status link
Product summary
Order code
Marking
STGYA50H120DF2
G50H120DF2
Max247 long leads
Tube
Package
Packing
DS13891
–
Rev 1
–
January 2022
For further information contact your local STMicroelectronics sales office.
STG
Y
A
50H120DF2
Electrical ratings
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
1200
100
Unit
V
CES
Collector-emitter voltage (V
= 0 V)
GE
V
Continuous collector current at T
= 25 °C
C
I
A
C
Continuous collector current at T
= 100 °C
50
C
I
Pulsed collector current
Gate-emitter voltage
200
A
V
CP
V
±20
GE
Continuous forward current at T
= 25 °C
100
C
I
A
F
Continuous forward current at T
= 100 °C
50
C
I
Pulsed forward current
200
A
FP
P
T
T
o
tal power dissipation at T
= 25 °C
535
W
°C
°C
TOT
C
Storage temperature range
-55 to 150
-55 to 175
STG
T
Operating junction temperature range
J
1. Pulse
width is limited by maximum junction temperature.
Table 2.
Thermal data
Symbol
Parameter
Value
0.28
0.62
50
Unit
°C/W
°C/W
Thermal resistance, junction-to-case IGBT
Thermal resistance, junction-to-case diode
Thermal resistance, junction-to-ambient
R
thJC
R
thJA
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Rev 1
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50H120DF2
Electrical characteristics
2
Electrical characteristics
T
J
= 25 °C unless otherwise specified.
Table 3.
Static characteristics
Test conditions
Symbol
Parameter
Min.
Typ. Max. Unit
Collector-emitter breakdown
voltage
V
V
= 0
V
, I
= 2
m
A
1200
V
(BR)CES
GE
C
V
V
V
= 15
V
, I
=
5
0 A
2.1
2.35
2.5
3.8
2.8
2.6
6
2.6
GE
GE
GE
C
Collector-emitter saturation
voltage
V
= 15
V
, I
=
5
0 A, T
= 125 °C
V
V
CE(sat)
C
J
= 15
V
, I
=
5
0 A, T
= 175 °C
C
J
I =
50 A
F
V
I =
50 A, T
= 125 °C
F J
Forward on-voltage
F
I =
50 A, T
= 175 °C
F
J
V
V
CE
= V
, I
= 2 mA
Gate threshold voltage
Collector cut-off current
Gate-emitter leakage current
5
7
V
GE(th)
GE
C
I
V
GE
V
CE
= 0
V
, V
=
1
200 V
25
µA
nA
CES
GES
CE
I
= 0
V
, V
=
±
20 V
±250
GE
Table 4.
Dynamic characteristics
Test conditions
Symbol
Parameter
Input capacitance
Min.
Typ. Max. Unit
C
ies
–
–
–
–
–
–
4150
288
104
210
29
–
–
–
–
–
–
pF
pF
pF
nC
nC
nC
C
V
CE
= 25 V, f = 1 MHz, V
= 0 V
GE
Output capacitance
Reverse transfer capacitance
T
o
tal gate charge
oes
C
res
Q
g
V
= 960
V
, I
=
5
0 A, V
= 0 to 15 V
CC
C
GE
Q
Gate-emitter charge
Gate-collector charge
ge
Q
103
gc
DS13891
–
Rev 1
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50H120DF2
Electrical characteristics
Table 5.
IGBT switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ. Max. Unit
t
Turn-on delay time
40
23
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
ns
ns
d(on)
t
r
Current rise time
(di/dt)
Turn-on current slope
Turn-off delay time
1800
284
54
A/µs
ns
on
V
V
= 600
V
, I
=
5
0 A,
C
CE
GE
t
d(off)
= 15
V
, R
=
1
0 Ω
G
t
f
Current fall time
ns
E
Turn-on switching energy
Turn-off switching energy
T
o
tal switching energy
Turn-on delay time
2
mJ
mJ
mJ
ns
on
E
2.1
off
E
4.1
ts
t
36
d(on)
t
Current rise time
27
ns
r
(di/dt)
Turn-on current slope
Turn-off delay time
1490
313
167
3.18
3.47
6.65
A/µs
ns
on
V
V
= 600
V
, I
=
5
0 A,
C
CE
GE
t
d(off)
= 15
V
, R
=
1
0 Ω, T
= 175 °C
G
J
t
f
Current fall time
ns
E
Turn-on switching energy
Turn-off switching energy
T
o
tal switching energy
Short-circuit withstand time
mJ
mJ
mJ
µs
on
E
off
E
ts
t
V
CC
≤ 600 V, V
= 15 V, T
≤ 150 °C
5
sc
GE
Jstart
1. Including
the reverse recovery of the diode.
2. Including
the tail of the collector current.
Table 6.
Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ. Max. Unit
t
Reverse recovery time
–
–
–
340
1.7
22
–
–
–
ns
µC
A
rr
Q
Reverse recovery charge
Reverse recovery current
Peak rate of fall of reverse
rr
I =
50 A, V
= 600
V
,
F
R
I
V
GE
= 15
V
,
d
i/dt = 1550 A/µs
rrm
dI /dt
rr
–
1310
–
A/µs
recovery current during t
b
E
Reverse recovery energy
Reverse recovery time
–
–
–
–
0.71
724
6.7
37
–
–
–
–
mJ
ns
µC
A
rr
t
rr
Q
Reverse recovery charge
Reverse recovery current
Peak rate of fall of reverse
rr
I =
50 A, V
= 600
V
,
F
R
I
V
GE
= 15
V
,
d
i/dt = 1550 A/µs, T
= 175 °C
rrm
J
dI /dt
rr
–
–
210
3
–
–
A/µs
mJ
recovery current during t
b
E
rr
Reverse recovery energy
DS13891
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Rev 1
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50H120DF2
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1.
Total power dissipation vs temperature
Figure 2.
Collector current vs case temperature
GADG221220211023PDT
GADG201220211349CCT
P
TOT
I
C
(W)
(A)
V
GE
≥
15
V
,
T
J
≤
175 °C
V
GE
≥
15 V, T
J
≤
175 °C
400
80
200
0
40
0
25
75
125
175
T
C
(°C)
25
75
125
175
T
C
(°C)
Figure 3.
Output characteristics (T
J
= 25 °C)
Figure 4.
Output characteristics (T
J
= 175 °C)
GADG201220211350OC25
GADG201220211351OC175
I
C
I
C
(A)
(A)
V
GE
=15 V
V
GE
=15 V
11 V
V
GE
=13 V
11 V
150
100
150
100
V
GE
=13 V
9 V
7 V
9 V
7 V
50
0
50
0
0
2
4
6
8
V
CE
(V)
0
2
4
6
8
V
CE
(V)
Figure 5.
V
CE(sat)
vs junction temperature
Figure 6.
V
CE(sat)
vs collector current
GADG201220211352VCET
GADG201220211353VCEC
V
CE(sat)
V
CE(sat)
(V)
(V)
V
GE
=15 V
V
GE
=15 V
3.1
4.5
I
C
= 100 A
2.7
2.3
1.9
T
J
= 175 °C
3.5
2.5
I
C
= 50 A
T
J
= -40 °C
I
C
= 25 A
1.5
0.5
1.5
1.1
T
J
= 25 °C
100
-50
0
50
100
150
T
J
(°C)
0
50
150
I
C
(A)
DS13891
–
Rev 1
page 5/15
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50H120DF2
Electrical characteristics (curves)
Figure 7.
Collector current vs switching frequency
Figure 8.
Safe operating area
GADG221220211028CCS
GADG211220211143FSOA
I
C
I
C
(A)
Rectangular current shape
(duty cycle = 0.5, V
CC
= 600
V
,
R
G
= 10 Ω, V
GE
= 0/15 V ,
T
J
= 175 °C
(A)
120
100
80
10
2
t
p
= 1 µs
t
p
= 10 µs
60
T
C
= 80 °C
10
1
t
p
= 100 µs
t
p
= 1 ms
40
T
C
= 100 °C
V
CE(sat)
max.
20
0
Single pulse, T
C
= 25 °C,
T
J
≤
175 °C, V
GE
= 15 V
10
0
10
0
10
0
10
1
10
2
f (kHz)
10
1
10
2
10
3
V
CE
(V)
Figure 10.
Diode V
F
vs forward current
Figure 9.
Transfer characteristics
GADG201220211354TCH
I
C
GADG221220211041DVF
V
F
(A)
(V)
T
J
= -40 °C
V
CE
=10 V
8
6
4
150
100
T
J
= 25 °C
T
J
= 175 °C
T
J
= 175 °C
50
0
2
0
T
J
= 25 °C
4
6
8
10
V
GE
(V)
0
50
100
150
I
F
(A)
Figure 11.
Normalized V
GE(th)
vs junction temperature
Figure 12.
Normalized V
(BR)CES
vs junction temperature
GIPG130320141400FSR
V
GE(th)
GIPG130320141405FSR
V
(BR)CES
(norm)
(norm)
I
C
= 2mA
1.06
V
CE
= V
GE
1.1
1.0
0.9
0.8
I
C
= 2mA
1.02
0.98
0.94
0.9
0.7
0.6
-50
0
50
100
150
T
J
(°C)
-50
0
50
100
150
T
J
(°C)
DS13891
–
Rev 1
page 6/15
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50H120DF2
Electrical characteristics (curves)
Figure 14.
Gate charge vs gate-emitter voltage
Figure 13.
Capacitance variations
GADG211220211157CVR
C
GADG201220211355GCGE
V
GE
(V)
(pF)
V
CC
= 960 V, I
C
= 50 A
,
I
G
= 5 mA
C
ies
15
10
3
12
9
10
2
6
C
oes
C
res
f = 1 MHz
3
0
10
1
10
-1
10
0
10
1
10
2
10
3
V
CE
(V)
0
40
80
120 160 200
Q
g
(nC)
Figure 15.
Switching energy vs collector current
Figure 16.
Switching energy vs gate resistance
GADG201220211356SLC
V
CC
= 600 V, R
G
= 10 Ω,
GADG201220211359SLG
E
(mJ)
E
(mJ)
V
CC
= 600
V
,
V
GE
= 15 V, I
C
= 50 A,
V
GE
= 15
V
,
T
J
=175
℃
T
J
= 175
℃
6
4
E
off
4
E
off
E
on
3
2
E
on
2
0
0
20
40
60
80
I
C
(A)
0
5
10
15
20
R
G
(Ω)
Figure 17.
Switching energy vs junction temperature
Figure 18.
Switching energy vs collector emitter voltage
GADG201220211357SLT
GADG201220211358SLV
E
(mJ)
E
(mJ)
I
=
50 A,
V
CC
= 600
V
,
V
GE
= 15 V
R
G
= 10 Ω,
C
I
C
= 50 A, R
G
= 10 Ω, V
GE
= 15
V
,
T
J
= 175
℃
5
E
on
3.3
E
off
4
E
off
2.8
3
2
E
on
2.3
1.8
1
0
50
100
150
T
J
(°C)
300 400 500 600 700 800 900
V
CE
(V)
DS13891
–
Rev 1
page 7/15
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50H120DF2
Electrical characteristics (curves)
Figure 19.
Switching times vs collector current
Figure 20.
Switching times vs gate resistance
GADG201220211400STC
GADG201220211401STR
V
CC
= 600
V
,
I
C
= 50 A, V
GE
= 15 V
t
t
10
6
(ns)
(ns)
V
GE
=15
V
,
T
J
= 175
℃
T
J
= 175 °C
t
d(off)
t
d(off)
t
f
t
f
10
2
100
t
d(on)
t
d(on)
t
r
t
r
10
1
10
0
0
20
40
60
80
I
C
(A)
5
10
15
20
R
G
(Ω)
Figure 21.
Reverse recovery current vs diode current
slope
Figure 22.
Reverse recovery time vs diode current slope
GADG201220211404RRT
t
rr
(ns)
GADG201220211403RRC
I
rrm
(A)
6
V
GE
=15
V
,
6
5
V
GE
=15
V
,
5
35
1600
30
25
20
1200
800
400
15
10
0
500
1000
1500
2000
di/dt (A/µs)
0
500
1000
1500
2000
di/dt (A/µs)
Figure 23.
Reverse recovery charge vs diode current
slope
Figure 24.
Reverse recovery energy vs diode current
slope
GADG201220211404RRQ
Q
rr
(µC)
GADG201220211405RRE
E
rr
(mJ)
6
5
V
GE
=15
V
,
6
V
GE
=15
V
,
5
3
2
6.5
5.5
4.5
1
0
0
500
1000
1500
2000
di/dt (A/µs)
0
500
1000
1500
2000
di/dt (A/µs)
DS13891
–
Rev 1
page 8/15
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Electrical characteristics (curves)
Figure 25.
Normalized transient thermal impedance for IGBT
ZthTO2T_A
K
δ = 0.5
δ = 0.2
δ = 0.05
δ = 0.1
δ = 0.02
10
-1
δ = 0.01
Single pulse
Z
th
= k*R
thJC
δ = t
p
/t
t
p
t
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
(s)
Figure 26.
Normalized transient thermal impedance for diode
Z
th
= k*R
thJC
δ = t
p
/t
t
p
t
DS13891
–
Rev 1
page 9/15
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Test circuits
3
Test circuits
Figure 27.
Test circuit for inductive load switching
Figure 28.
Gate charge test circuit
A
B
A
C
E
k
L
=
1
0
0
µ
H
k
G
B
V
CC
3
.
3
µF
1000
µF
C
k
G
D
.
U
.
T
k
R
G
E
+
k
–
k
AM01505v1
AM01504v1
Figure 29.
Switching waveform
Figure 30.
Diode reverse recovery waveform
di/dt
Q
rr
90%
10%
t
rr
I
F
t
s
t
f
V
G
90%
10%
t
I
RRM
10%
V
CE
t
r(Voff)
t
cross
I
RRM
90%
10%
V
RRM
I
C
t
d(off)
t
off
t
d(on)
t
on
t
f
t
r(Ion)
dv/dt
GADG180720171418SA
AM01506v1
DS13891
–
Rev 1
page 10/15
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Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
4.1
Max247 long leads package information
Figure 31.
Max247 long leads package outline
Section C-C, D-D, E-E
Bottom view
T
o
p view
DM00176969_rev_3
DS13891
–
Rev 1
page 11/15
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Max247 long leads package information
Table 7.
Max247 long leads package mechanical data
mm
Typ.
5.00
2.41
2.00
Dim.
Min.
4.90
2.31
1.90
0
Max.
5.10
2.51
2.10
0.15
0.15
1.26
1.22
2.06
2.02
3.06
3.02
2.25
3.25
0.66
0.62
21.10
16.85
1.35
0.78
3.10
15.90
13.50
1.55
1.34
5.54
4.45
20.10
4.30
1.30
2.60
10.20
6.40
A
A1
A2
a
a’
0
b
1.16
1.15
1.96
1.95
2.96
2.95
b1
b2
b3
b4
b5
b6
b7
c
1.20
2.00
3.00
0.59
0.58
20.90
16.25
1.05
0.58
2.90
15.70
13.10
1.35
1.14
5.34
4.25
19.80
3.90
0.70
2.40
9.80
6.00
c1
D
0.60
21.00
16.55
1.17
D1
D2
D3
D4
E
0.68
3.00
15.80
13.26
1.45
E1
E3
E4
e
1.24
5.44
K
4.35
L
19.92
L1
M
P
2.50
T
U
DS13891
–
Rev 1
page 12/15
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Revision history
Table 8.
Document revision history
Date
12-Jan-2022
Revision
Changes
1
First release.
DS13891
–
Rev 1
page 13/15
STG
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Contents
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
2
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
3
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10
Package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Max247 long leads package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
DS13891
–
Rev 1
page 14/15
STG
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