STMicroelectronics-STGYA50M120DF3
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STG
Y
A50M120DF3
Datasheet
Trench gate field-stop, 1200 V, 50 A, low-loss M series IGBT
in a Max247 long leads package
Features
•
•
•
•
•
•
•
Maximum junction temperature: T
J
= 175 °C
10 μs of short-circuit withstand time
Low V
CE(sat)
= 1.7 V (typ.) @ I
C
= 50 A
Tight parameter distribution
3
2
TAB
1
Positive V
CE(sat)
temperature coefficient
Low thermal resistance
1
Soft- and fast-recovery antiparallel diode
2
3
Max247 long leads
Applications
•
•
•
•
C(2, TAB)
G(1)
Description
This device is an IGBT developed using an advanced proprietary trench gate field-
stop structure. The device is part of the M series IGB
T
s
, which represent an optimal
balance between inverter system performance and efficiency where the low-loss
and the short-circuit functionality is essential. Furthermore, the positive V
CE(sat)
temperature coefficient and the tight parameter distribution result in safer paralleling
operation.
E(3)
NG1E3C2T
Product status link
Product summary
Order code
Marking
STGYA50M120DF3
G50M120DF3
Max247 long leads
Tube
Package
Packing
DS13799
–
Rev 2
–
October 2021
For further information contact your local STMicroelectronics sales office.
STG
Y
A50M120DF3
Electrical ratings
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
1200
100
Unit
V
CES
Collector-emitter voltage (V
= 0 V)
GE
V
Continuous collector current at T
= 25 °C
C
I
A
C
Continuous collector current at T
= 100 °C
50
C
I
Pulsed collector current
Gate-emitter voltage
200
±20
±30
100
A
V
CP
V
GE
Transient gate-emitter voltage
Continuous forward current at T
= 25 °C
C
I
A
F
Continuous forward current at T
= 100 °C
50
200
C
I
Pulsed forward current
A
FP
P
T
T
o
tal power dissipation at T
= 25 °C
535
W
°C
°C
TOT
C
Storage temperature range
-55 to 150
-55 to 175
STG
T
Operating junction temperature range
J
1. Pulse
width is limited by maximum junction temperature.
Table 2.
Thermal data
Symbol
Parameter
Value
0.28
0.48
50
Unit
°C/W
°C/W
Thermal resistance, junction-to-case IGBT
Thermal resistance, junction-to-case diode
Thermal resistance, junction-to-ambient
R
thJC
R
thJA
DS13799
–
Rev 2
page 2/15
STG
Y
A50M120DF3
Electrical characteristics
2
Electrical characteristics
T
J
= 25 °C unless otherwise specified.
Table 3.
Static characteristics
Test conditions
Symbol
Parameter
Min.
Typ. Max. Unit
Collector-emitter breakdown
voltage
V
V
= 0
V
, I
= 2
m
A
1200
V
(BR)CES
GE
C
V
V
V
= 15
V
, I
=
5
0 A
1.7
1.95
2.1
2.80
2.3
2.1
6
2.2
GE
GE
GE
C
Collector-emitter saturation
voltage
V
= 15
V
, I
=
5
0 A, T
= 125 °C
V
V
CE(sat)
C
J
= 15
V
, I
=
5
0 A, T
= 175 °C
C
J
I =
50 A
F
3.95
V
I =
50 A, T
= 125 °C
F J
Forward on-voltage
F
I =
50 A, T
= 175 °C
F
J
V
V
CE
= V
, I
= 2 mA
Gate threshold voltage
Collector cut-off current
Gate-emitter leakage current
5
7
V
GE(th)
GE
C
I
V
GE
V
CE
= 0
V
, V
=
1
200 V
25
µA
nA
CES
GES
CE
I
= 0
V
, V
=
±
20 V
±250
GE
Table 4.
Dynamic characteristics
Test conditions
Symbol
Parameter
Input capacitance
Min.
Typ. Max. Unit
C
ies
–
–
–
–
–
–
3152
310
123
194
27
–
–
–
–
–
–
pF
pF
pF
nC
nC
nC
C
V
CE
= 25 V, f = 1 MHz, V
= 0 V
GE
Output capacitance
Reverse transfer capacitance
T
o
tal gate charge
oes
C
res
Q
g
V
= 960
V
, I
=
5
0 A, V
= 0 to 15 V
CC
C
GE
Q
Gate-emitter charge
Gate-collector charge
ge
Q
96
gc
DS13799
–
Rev 2
page 3/15
STG
Y
A50M120DF3
Electrical characteristics
Table 5.
IGBT switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ. Max. Unit
t
Turn-on delay time
38
16
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
ns
ns
d(on)
t
r
Current rise time
(di/dt)
Turn-on current slope
Turn-off delay time
2580
258
142
2
A/µs
ns
on
V
V
= 600
V
, I
=
5
0 A,
C
CE
GE
t
d(off)
= 15
V
, R
=
1
0 Ω
G
t
f
Current fall time
ns
E
Turn-on switching energy
Turn-off switching energy
T
o
tal switching energy
Turn-on delay time
mJ
mJ
mJ
ns
on
E
3.2
5.2
36
off
E
ts
t
d(on)
t
Current rise time
18
ns
r
(di/dt)
Turn-on current slope
Turn-off delay time
2400
296
311
3.2
5.4
8.6
A/µs
ns
on
V
V
= 600
V
, I
=
5
0 A,
C
CE
GE
t
d(off)
= 15
V
, R
=
1
0 Ω, T
= 175 °C
G
J
t
f
Current fall time
ns
E
Turn-on switching energy
Turn-off switching energy
T
o
tal switching energy
Short-circuit withstand time
mJ
mJ
mJ
µs
on
E
off
E
ts
t
V
CC
≤ 600 V, V
= 15 V, T
≤ 150 °C
10
sc
GE
Jstart
1. Including
the reverse recovery of the diode.
2. Including
the tail of the collector current.
Table 6.
Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ. Max. Unit
t
Reverse recovery time
–
–
–
325
2.2
20
–
–
–
ns
µC
A
rr
Q
Reverse recovery charge
Reverse recovery current
Peak rate of fall of reverse
rr
I =
50 A, V
= 600
V
,
F
R
I
V
GE
= 15
V
,
d
i/dt = 1700 A/µs
rrm
dI /dt
rr
–
60
–
A/µs
recovery current during t
b
E
Reverse recovery energy
Reverse recovery time
–
–
–
–
1.1
750
7.65
41
–
–
–
–
mJ
ns
µC
A
rr
t
rr
Q
Reverse recovery charge
Reverse recovery current
Peak rate of fall of reverse
rr
I =
50 A, V
= 600
V
,
F
R
I
V
GE
= 15
V
,
d
i/dt = 1700 A/µs, T
= 175 °C
rrm
J
dI /dt
rr
–
–
65
–
–
A/µs
mJ
recovery current during t
b
E
rr
Reverse recovery energy
3.47
DS13799
–
Rev 2
page 4/15
STG
Y
A
50M120DF3
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1.
Power dissipation vs case temperature
Figure 2.
Collector current vs case temperature
GADG270720211137PDT
GADG270720211138CCT
P
TOT
I
C
(W)
(A)
V
GE
≥
15
V
,
T
J
≤
175 °C
500
V
GE
≥
15 V, T
J
≤
175 °C
400
300
200
100
50
0
100
0
25
75
125
175
T
C
(°C)
25
75
125
175
T
C
(°C)
Figure 3.
Output characteristics (T
J
= 25 °C)
Figure 4.
Output characteristics (T
J
= 175 °C)
GADG270720211139OC25
GADG270720211139OC175
I
C
I
C
(A)
(A)
V
GE
= 13, 15 V
11V
V
GE
= 15 V
13V
150
150
11V
100
100
9V
9V
50
50
7V
V
CE
(V)
7V
V
CE
(V)
0
0
0
0
1
2
3
4
1
2
3
4
Figure 5.
V
CE(sat)
vs junction temperature
Figure 6.
V
CE(sat)
vs collector current
GADG270720211140VCET
GADG270720211142VCEC
V
CE(sat)
V
CE(sat)
(V)
(V)
I
C
= 100 A
3.1
T
J
= 175 °C
V
GE
= 15 V
4.5
2.7
2.3
1.9
1.5
V
GE
= 15 V
T
J
= 25 °C
3.5
2.5
I
C
= 50 A
I
C
= 25 A
T
J
= -40 °C
1.5
0.5
1.1
0.7
-50
0
50
100
150
T
J
(°C)
0
50
100
150
I
C
(A)
DS13799
–
Rev 2
page 5/15
STG
Y
A50M120DF3
Electrical characteristics (curves)
Figure 7.
Collector current vs switching frequency
Figure 8.
Safe operating area
GADG270720211221CCS
GADG270720211154FSOA
I
C
I
C
Rectangular current shape,
duty cycle = 0.5,
V
CC
= 600
V
,
R
G
= 10 Ω,
(A)
(A)
120
V
GE
= 0 to 15
V
,
T
J
= 175 °C
100
80
10
2
t
p
=1 µs
T
C
= 80 °C
t
p
=10 µs
60
10
1
t
p
=100 µs
t
p
=1 ms
T
C
= 100 °C
40
T
C
= 25 °C,
T
J
≤
175 °C,
V
GE
= 15 V,
Single pulse
20
0
10
0
10
0
10
0
10
1
10
2
10
1
10
2
10
3
f (kHz)
V
CE
(V)
Figure 10.
Diode V
F
vs forward current
Figure 9.
Transfer characteristics
GADG270720211201TCH
I
C
GADG270720211202DVF
V
F
(A)
(V)
5
V
CE
= 10 V
T
J
= -40 °C
150
100
50
4
3
2
T
J
= 175 °C
T
J
= 25 °C
T
J
= 25 °C
T
J
= 175 °C
1
0
0
4
6
8
10
12
V
GE
(V)
0
50
100
150
I
F
(A)
Figure 11.
Normalized V
GE(th)
vs junction temperature
Figure 12.
Normalized V
(BR)CES
vs junction temperature
GIPD110920141203FSR
GIPD110920141208FSR
V
(BR)CES
V
GE(th)
(norm)
(norm)
I
C
= 2 mA
V
CE
= V
GE
1.1
1.06
I
C
= 2 mA
1.04
1.02
1.00
1.0
0.9
0.98
0.96
0.94
0.8
0.7
0.92
0.90
-50
0
50
100
150
T
J
(°C)
-50
0
50
100
150
T
J
(°C)
DS13799
–
Rev 2
page 6/15
STG
Y
A50M120DF3
Electrical characteristics (curves)
Figure 13.
Capacitance variations
Figure 14.
Gate charge vs gate-emitter voltage
GADG270720211203CVR
GADG270720211203GCGE
V
GE
C
(V)
V
CC
= 960 V, I
C
= 50 A,
(pF)
I
G
= 17.7 mA
15
C
ies
10
3
12
9
10
2
10
1
6
C
oes
3
0
C
res
f = 1 MHz
0
40
80
120 160 200
Q
g
(nC)
10
-1
10
0
10
1
10
2
10
3
V
CE
(V)
Figure 15.
Switching energy vs collector current
Figure 16.
Switching energy vs gate resistance
GADG270720211208SLC
GADG270720211209SLG
E
(mJ)
E
(mJ)
6
10
6
I
C
= 50 A,
V
GE
= 15
V
,
T
J
= 175
℃
T
J
= 175
℃,
V
GE
= 15 V
6
9
E
off
5
4
E
off
6
E
on
E
on
3
0
3
2
0
20
40
60
80
100
I
C
(A)
0
5
10
15
20
R
G
(Ω)
Figure 17.
Switching energy vs junction temperature
Figure 18.
Switching energy vs collector emitter voltage
GADG270720211208SLT
GADG270720211209SLV
E
E
I
C
= 50 A, R
G
= 10 Ω,
V
GE
= 15
V
,
T
J
= 175
℃
(mJ)
(mJ)
6
I
C
= 50 A,
R
G
= 10 Ω, V
GE
= 15 V
6
5
5
4
3
E
off
E
off
4
3
E
on
E
on
2
1
2
1
0
50
100
150
T
J
(°C)
350 450 550 650 750 850
V
CE
(V)
DS13799
–
Rev 2
page 7/15
STG
Y
A50M120DF3
Electrical characteristics (curves)
Figure 19.
Switching times vs collector current
Figure 20.
Switching times vs gate resistance
GADG270720211210STC
GADG270720211210STR
I
C
= 50 A,
t
t
6
(ns)
(ns)
t
d(off)
V
GE
= 15
V
,
T
J
= 175
℃
t
f
t
f
10
2
t
d(off)
t
d(on)
10
2
t
r
10
1
t
d(on)
t
r
6
10
V
GE
= 15
V
,
T
J
= 175
℃
10
0
10
1
0
20
40
60
80
100
I
C
(A)
0
5
10
15
20
R
G
(Ω)
Figure 21.
Reverse recovery current vs diode current
slope
Figure 22.
Reverse recovery time vs diode current slope
GADG270720211219RRT
t
rr
(ns)
GADG270720211219RRC
I
rrm
(A)
6
I
F
= 50 A,
6
I
F
= 50 A,
V
GE
= 15
V
,
T
J
= 175
℃
V
GE
= 15
V
,
T
J
= 175
℃
40
1000
35
30
25
20
900
800
700
600
15
10
0
500
1000
1500
2000
di/dt (A/µs)
0
500
1000
1500
2000
di/dt (A/µs)
Figure 23.
Reverse recovery charge vs diode current
slope
Figure 24.
Reverse recovery energy vs diode current
slope
GADG270720211220RRQ
GADG270720211221RRE
Q
rr
(µC)
E
rr
(mJ)
6
I
F
= 50 A,
V
GE
= 15
V
,
T
J
= 175
℃
6
I
F
= 50 A,
V
GE
= 15
V
,
T
J
= 175
℃
7
6
5
3
2
1
0
4
3
0
500
1000
1500
2000
di/dt (A/µs)
0
500
1000
1500
2000
di/dt (A/µs)
DS13799
–
Rev 2
page 8/15
STG
Y
A
50M120DF3
Electrical characteristics (curves)
Figure 25.
Thermal impedance for IGBT
ZthTO2T_A
K
δ = 0.5
δ = 0.2
δ = 0.05
δ = 0.1
δ = 0.02
10
-1
δ = 0.01
Single pulse
Z
th
= k*R
thJC
δ = t
p
/t
t
p
t
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
(s)
Figure 26.
Thermal impedance for diode
Z
th
= k*R
thJC
δ = t
p
/t
t
p
t
DS13799
–
Rev 2
page 9/15
STG
Y
A50M120DF3
Test circuits
3
Test circuits
Figure 27.
Test circuit for inductive load switching
Figure 28.
Gate charge test circuit
A
B
A
C
E
k
L
=
1
0
0
µ
H
k
G
B
V
CC
3
.
3
µF
1000
µF
C
k
G
D
.
U
.
T
k
R
G
E
+
k
–
k
AM01505v1
AM01504v1
Figure 29.
Switching waveform
Figure 30.
Diode reverse recovery waveform
di/dt
Q
rr
90%
10%
t
rr
I
F
t
s
t
f
V
G
90%
10%
t
I
RRM
10%
V
CE
t
r(Voff)
t
cross
I
RRM
90%
10%
V
RRM
I
C
t
d(off)
t
off
t
d(on)
t
on
t
f
t
r(Ion)
dv/dt
GADG180720171418SA
AM01506v1
DS13799
–
Rev 2
page 10/15
STG
Y
A
50M120DF3
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
4.1
Max247 long leads package information
Figure 31.
Max247 long leads package outline
Section C-C, D-D, E-E
Bottom view
T
o
p view
DM00176969_rev_3
DS13799
–
Rev 2
page 11/15
STG
Y
A50M120DF3
Max247 long leads package information
Table 7.
Max247 long leads package mechanical data
mm
Typ.
5.00
2.41
2.00
Dim.
Min.
4.90
2.31
1.90
0
Max.
5.10
2.51
2.10
0.15
0.15
1.26
1.22
2.06
2.02
3.06
3.02
2.25
3.25
0.66
0.62
21.10
16.85
1.35
0.78
3.10
15.90
13.50
1.55
1.34
5.54
4.45
20.10
4.30
1.30
2.60
10.20
6.40
A
A1
A2
a
a’
0
b
1.16
1.15
1.96
1.95
2.96
2.95
b1
b2
b3
b4
b5
b6
b7
c
1.20
2.00
3.00
0.59
0.58
20.90
16.25
1.05
0.58
2.90
15.70
13.10
1.35
1.14
5.34
4.25
19.80
3.90
0.70
2.40
9.80
6.00
c1
D
0.60
21.00
16.55
1.17
D1
D2
D3
D4
E
0.68
3.00
15.80
13.26
1.45
E1
E3
E4
e
1.24
5.44
K
4.35
L
19.92
L1
M
P
2.50
T
U
DS13799
–
Rev 2
page 12/15
STG
Y
A50M120DF3
Contents
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
2
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
3
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10
Package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Max247 long leads package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
DS13799
–
Rev 2
page 14/15
STG
Y
A50M120DF3
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