STMicroelectronics-STH15810-2
| Part # | STMicroelectronics-STH15810-2 |
Download  | STMicroelectronics-STH15810-2 |
STH15810-2
N-channel 100 V, 0.0034
Ω
typ., 110 A, STripFET™ F7
2
Power MOSFET in a H
PAK-2 package
Datasheet
−
preliminary data
Features
Order code
V
DS
R
DS(on)max
I
D
P
TOT
STH15810-2
100 V
0.0039
Ω
110 A
250 W
TAB
•
100% avalanche tested
•
Ultra low on-resistance
2
1
3
Applications
H
2
PAK-2
•
Switching applications
Description
This N-channel Power MOSFE
T
s
u
tilize
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
Figure 1. Internal schematic diagram
‘ꢅ7$%ꢆ
*ꢅꢁꢆ
6ꢅꢇꢈꢉꢊꢆ
$0ꢀꢁꢂꢃꢄYꢁ
Table 1. Device summary
Order code
Marking
15810
Package
Packaging
H
2
PAK-2
STH15810-2
T
a
pe and reel
August 2014
DocID025819 Rev 2
1/16
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
Contents
STH15810-2
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/16
DocID025819 Rev 2
STH15810-2
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Parameter
Symbol
Value
Unit
V
DS
V
GS
I
D
Drain-source voltage
Gate- source voltage
100
±20
110
110
440
250
495
V
V
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed) T
C
= 25 °C
T
o
tal dissipation at T
C
= 25 °C
Single pulse avalanche energy
Operating junction temperature
Storage temperature
A
I
D
A
(1)
I
DM
A
P
TOT
W
mJ
°C
(2)
E
AS
T
J
-55 to 175
T
stg
°C
1. Pulse
width is limited by safe operating area
2. Starting
T =25 °C, I
=30 A, V
=50 V
j
D
DD
Table 3. Thermal data
Parameter
Symbol
Value
Unit
R
thj-case
Thermal resistance junction-case max
Thermal resistance junction-pcb max
0.6
35
°C/W
°C/W
(1)
R
thj-pcb
1. When
mounted on 1 inch² FR-4 board, 2 oz Cu
DocID025819 Rev 2
3/16
16
Electrical characteristics
STH15810-2
2
Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Table 4. On /off states
Symbol
Parameter
Drain-source
Test conditions
Min.
Typ.
Max. Unit
V
(BR)DSS
V
GS
= 0, I
D
= 250 µA
100
V
breakdown voltage
V
GS
= 0, V
DS
= 100 V
1
µA
µA
Zero gate voltage
drain current
I
DSS
V
V
GS
= 0,
DS
= 100 V, T
C
=125 °C
100
Gate-body leakage
current
I
GSS
V
DS
= 0, V
GS
= +20 V
100
4.5
nA
V
V
GS(th)
R
DS(on)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250 µA
Static drain-source on-
2.5
V
GS
= 10
V
,
I
D
= 55 A
0.0034 0.0039
Ω
resistance
Table 5. Dynamic
Test conditions
Symbol
Parameter
Min.
Typ.
8115
1510
Max. Unit
C
iss
Input capacitance
Output capacitance
–
–
–
–
pF
pF
C
oss
V
DS
= 50
V
, f = 1 MHz,
V
GS
= 0
C
rss
Reverse transfer
capacitance
–
67
–
pF
Q
g
Q
gs
Q
gd
T
o
tal gate charge
Gate-source charge
Gate-drain charge
–
–
–
117
47
–
–
–
nC
nC
nC
V
DD
= 50 V, I
D
=110 A,
V
GS
= 10 V
26
Table 6. Switching times
Test conditions
Symbol
Parameter
Min.
Typ.
Max. Unit
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
–
–
–
–
33
57
72
33
–
–
–
–
ns
ns
ns
ns
V
DD
= 50 V, I
D
= 55 A,
R
G
= 4.7
Ω,
V
GS
= 10 V
Turn-off delay time
Fall time
4/16
DocID025819 Rev 2
STH15810-2
Electrical characteristics
Min. Typ. Max.
Unit
Table 7. Source drain diode
Test conditions
Symbol
Parameter
I
SD
Source-drain current
–
–
–
–
–
–
110
440
1.2
A
A
(1)
I
SDM
Source-drain current (pulsed)
Forward on voltage
(2)
V
SD
I
SD
= 110 A, V
GS
= 0
V
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
70
165
4.7
ns
nC
A
I
SD
= 110 A, di/dt = 100 A/µs
Q
rr
V
DD
= 80
V
,
T
J
=150 °C
I
RRM
1. Pulse
width limited by safe operating area
2. Pulsed:
pulse duration = 300 µs, duty cycle 1.5%.
DocID025819 Rev 2
5/16
16
Electrical characteristics
STH15810-2
2.1
Electrical characteristics (curves)
Figure 2. Safe operating area
Figure 3. Thermal impedance
AM18052v1
AM18051v1
I
D
(A)
K
δ
=0.5
0.2
100
0.1
0.05
10
-1
10
100
µ
s
0.02
0.01
c
1ms
1
Single pulse
Tj=175°C
T
c
=25°C
10ms
Single pulse
10
-2
10
-5
0.1
0.1
10
-4
10
-3
10
0
t
p
(s)
10
-2
10
-1
1
V
DS
(V)
10
Figure 4. Output characteristics
Figure 5. Transfer characteristics
AM18042v1
AM18043v1
I
D
(A)
I
D
(A)
V
GS
=10V
V
DS
=4V
400
350
300
8V
300
7V
250
200
150
100
250
200
150
100
6V
50
0
50
0
5V
2
4
6
V
DS
(V)
8
V
GS
(V)
0
2
0
4
6
8
Figure 6. Gate charge vs gate-source voltage
Figure 7. Static drain-source on-resistance
AM18044v1
AM18053v1
V
(V)
GS
R
DS(on)
(m
Ω
)
V
DD
=50V
V
GS
=10V
3.430
3.420
3.410
3.400
12
I
D
=110A
10
8
6
3.390
3.380
3.370
3.360
4
2
0
20
40
60
80
100
I
120
0
40
80
Q
g
(nC)
0
D
(A)
6/16
DocID025819 Rev 2
STH15810-2
Electrical characteristics
Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage vs
temperature
AM18046v1
AM18047v1
V
GS(th)
(norm)
C
(pF)
I
D
=250
µ
A
1.1
Ciss
8000
7000
1
0.9
0.8
0.7
6000
5000
4000
3000
2000
0.6
0.5
0.4
1000
0
Coss
Crss
DS
(V)
0
60
-75
20
40
80
V
-25
75
T
J
(°C)
100
25
125
Figure 10. Normalized on-resistance vs
temperature
Figure 11. Normalized V
DS
vs temperature
AM18048v1
AM18049v1
R
DS(on)
(norm)
V
DS
(norm)
1.04
I
D
=55A
2
I
D
=1mA
1.8
1.03
1.02
1.01
1
1.6
1.4
1.2
1
0.99
0.8
0.98
0.97
0.96
0.6
0.4
-75
-75
-25
75
T
J
(°C)
-25
75
T
J
(°C)
25
125
25
125
Figure 12. Source-drain diode forward
characteristics
AM18055v1
SD
(V)
1
V
T
J
=-55°C
0.9
T
J
=25°C
0.8
0.7
0.6
0.5
T
J
=175°C
0.4
0.3
0
20
40
60
80
I
SD
(A)
100
DocID025819 Rev 2
7/16
16
Test circuits
STH15810-2
3
Test circuits
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
V
DD
12V
47k
Ω
1k
Ω
100nF
2200
μ
F
3.3
μ
F
R
L
I
G
=CONST
V
DD
100
Ω
V
i
=20V=V
GMAX
D.U.T.
V
D
R
G
V
GS
2200
μ
F
D.U.T.
V
G
2.7k
Ω
47k
Ω
P
W
1k
Ω
P
W
AM01468v1
AM01469v1
Figure 15. Test circuit for inductive load
switching and diode recovery times
Figure 16. Unclamped inductive load test circuit
L
A
A
A
B
D
S
FAST
DIODE
L=100
μ
H
V
D
G
2200
μ
F
D.U.T.
B
3.3
μ
F
V
DD
3.3
μ
F
1000
μ
F
B
V
DD
25
Ω
I
D
D
G
R
G
S
V
i
D.U.T.
P
w
AM01470v1
AM01471v1
Figure 17. Unclamped inductive waveform
Figure 18. Switching time waveform
t
on
t
off
td
off
V
(BR)DSS
t
r
t
f
td
on
V
D
90%
10%
90%
I
DM
10%
V
GS
V
DS
I
D
0
0
V
DD
V
DD
90%
10%
AM01472v1
AM01473v1
8/16
DocID025819 Rev 2
STH15810-2
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
ECOPACK
®
is an ST trademark.
DocID025819 Rev 2
9/16
16
Package mechanical data
STH15810-2
Figure 19. H²PAK-2 drawing
8159712_C
10/16
DocID025819 Rev 2
STH15810-2
Package mechanical data
Table 8. H²PAK-2 mechanical data
mm
Dim.
Min.
Typ.
Max.
A
A1
C
4.30
0.03
1.17
4.98
0.50
0.78
10.00
7.40
15.30
1.27
4.93
6.85
1.5
4.80
0.20
1.37
5.18
0.90
0.85
10.40
7.80
15.80
1.40
5.23
7.25
1.7
e
E
F
H
H1
L
–
L1
L2
L3
L4
M
R
2.6
2.9
0.20
0°
0.60
8°
V
DocID025819 Rev 2
11/16
16
Package mechanical data
STH15810-2
Figure 20. H²PAK-2 recommended footprint (dimensions are in mm)
8159712_C
12/16
DocID025819 Rev 2
STH15810-2
Packaging mechanical data
5
Packaging mechanical data
Table 9. H²PAK-2 tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
Min.
Max.
A0
B0
D
10.5
15.7
1.5
10.7
15.9
1.6
A
B
C
D
G
N
T
330
1.5
12.8
20.2
24.4
100
13.2
26.4
30.4
D1
E
1.59
1.65
11.4
4.8
1.61
1.85
11.6
5.0
F
K0
P0
P1
P2
R
3.9
4.1
11.9
1.9
12.1
2.1
Base qty
Bulk qty
1000
1000
50
T
0.25
23.7
0.35
24.3
W
DocID025819 Rev 2
13/16
16
Packaging mechanical data
STH15810-2
Figure 21. Tape
10 pitches cumulative
tolerance on tape +/- 0.2 mm
P0
D
P2
Top cover
tape
T
E
F
W
K0
B0
A0
D1
P1
User direction of feed
R
Bending radius
User direction of feed
AM08852v2
Figure 22. Reel
T
REEL DIMENSIONS
40mm min.
Access hole
At sl
ot location
B
D
C
N
A
G measured at hub
Full radius
Tape slot
in core for
tape start 25 mm min.
width
AM08851v2
14/16
DocID025819 Rev 2
STH15810-2
Revision history
6
Revision history
Table 10. Document revision history
Changes
Date
Revision
First release. The part number previously included in datasheet
DocID024972
22-Jan-2014
1
Updated title and description in cover page.
Minor text changes.
25-Aug-2014
2
DocID025819 Rev 2
15/16
16
STH15810-2
IMPORTANT NOTICE – PLEASE READ CAREFUL
L
Y
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and
improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on
ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order
acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or
the design of Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of S
T
.
A
ll other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2014 STMicroelectronics – All rights reserved
16/16
DocID025819 Rev 2
