STMicroelectronics-STH240N10F7-6
| Part # | STMicroelectronics-STH240N10F7-6 |
Download  | STMicroelectronics-STH240N10F7-6 |
STH240N10F7-2, STH240N10F7-6
Datasheet
N-channel 100
V
, 2
m
Ω typ., 180 A STripFET™ F7 Power MOSFE
T
s
i
n an
H²PAK-2 and H²PAK-6 packages
Features
Order code
V
R
DS(on)
max.
I
D
DS
TAB
TAB
STH240N10F7-2
STH240N10F7-6
100 V
2.5 mΩ
180 A
7
2
1
3
1
H
2
PAK-2
H
2
PAK-6
•
•
•
•
Among the lowest R
DS(on)
on the market
Excellent FoM (figure of merit)
Low C
rss
/C
iss
ratio for EMI immunity
High avalanche ruggedness
D(TAB)
D(TAB)
Description
These N-channel Power MOSFE
T
s
u
tilize STripFET™ F7 technology with an
enhanced trench gate structure that results in very low on-state resistance, while also
reducing internal capacitance and gate charge for faster and more efficient switching.
G(1)
G(1)
S(2, 3)
S(2, 3, 4, 5, 6, 7)
for
H
2
PAK-2
for
H
2
PAK-6
N-CHG1DTABS23_2_6
Product status
Product summary
Order code
STH240N10F7-2
240N10F7
Marking
Package
Packing
H²PAK-2
T
a
pe and reel
STH240N10F7-6
240N10F7
Order code
Marking
Package
Packing
H²PAK-6
T
a
pe and reel
DS10259
–
Rev 3
–
February 2018
For further information contact your local STMicroelectronics sales office.
STH240N10F7-2, STH240N10F7-6
Electrical ratings
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
100
±20
180
120
720
300
500
Unit
V
V
V
Drain-source voltage
Gate-source voltage
DS
V
GS
Drain current (continuous) at T
= 25 °C
I
A
C
D
D
Drain current (continuous) at T
= 100 °C
I
A
c
I
Drain current (pulsed)
A
DM
P
T
o
tal dissipation at T
= 25 °C
W
mJ
TOT
C
E
AS
Single pulse avalanche energy
Operating junction temperature range
Storage temperature range
T
j
-55 to 175
°C
T
stg
1. Current
limited by package.
2. Pulse
width limited by safe operating area.
3. Starting
T =25 °C, I
=45 A, V
=50 V
j
D
DD
Table 2.
Thermal data
Parameter
Symbol
Value
0.5
Unit
R
thj-case
Thermal resistance junction-case
Thermal resistance junction-pcb
°C/W
°C/W
R
thj-pcb
35
1. When
mounted on 1 inch² FR-4, 2 Oz copper board.
DS10259
–
Rev 3
page 2/18
STH240N10F7-2, STH240N10F7-6
Electrical characteristics
2
Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Table 3.
On/Off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
Drain-source breakdown
voltage
V
I
= 250 µA, V
= 0 V
100
(BR)DSS
D
GS
V
V
= 0
V
, V
=
1
00 V
1
µA
GS
DS
Zero gate voltage
drain current
I
I
DSS
= 0
V
, V
=
1
00
V
,
GS
DS
100
µA
C
Gate-body leakage
current
V
GS
V
DS
V
GS
= ±20
V
, V
= 0 V
DS
100
4.5
2.5
nA
V
GSS
V
R
= V
, I
= 250 μA
Gate threshold voltage
2.5
GS(th)
GS
D
Static drain-source
on-resistance
= 10
V
, I
=
6
0 A
2
mΩ
DS(on)
D
1. Defined
by design, not subject to production test.
Table 4.
Dynamic
Test conditions
Symbol
Parameter
Input capacitance
Min.
Typ.
11550
2950
217
Max.
Unit
pF
C
iss
–
–
–
–
–
–
–
–
–
–
V
V
= 25 V, f = 1 MHz,
= 0 V
DS
C
oss
Output capacitance
pF
GS
C
rss
Reverse transfer capacitance
T
o
tal gate charge
pF
Q
g
V
V
= 50
V
, I
=
1
80 A,
160
nC
nC
DD
D
= 0 to 10 V
Q
GS
Gate-source charge
48
gs
Q
gd
Gate-drain charge
–
38
–
nC
Table 5.
Switching times
Test conditions
Symbol
Parameter
Turn-on delay time
Rise time
Min.
Typ.
49
Max.
Unit
t
V
= 50
V
, I
=
9
0 A,
–
–
–
–
–
–
ns
ns
ns
d(on)
DD
D
R
G
= 4.7 Ω, V
= 10 V (see
t
r
GS
139
110
t
Turn-off delay time
d(off)
t
Fall time
–
112
–
ns
f
Table 6.
Source-drain diode
Test conditions
Symbol
Parameter
Min.
Typ.
Max.
180
Unit
A
I
Source-drain current
–
–
SD
I
Source-drain current (pulsed)
720
A
SDM
DS10259
–
Rev 3
page 3/18
STH240N10F7-2, STH240N10F7-6
Electrical characteristics
Symbol
Parameter
Source-drain curren
Test conditions
Min.
Typ.
Max.
Unit
V
V
I
I
= 180 A, V
= 0 V
–
–
–
1.2
SD
GS
SD
t
rr
= 180 A, di/dt = 100 A/µs
= 64
V
, T
=
1
50 °C (see
Reverse recovery time
Reverse recovery charge
108
315
ns
SD
V
Q
DD
J
nC
rr
I
Reverse recovery current
–
5.8
A
RRM
1. Pulse
width limited by safe operating area.
2. Pulsed:
pulse duration=300 μs, duty cycle 1.5%.
DS10259
–
Rev 3
page 4/18
STH240N10F7-2, STH240N10F7-6
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 3.
Safe operating area
Figure 4.
Thermal impedance
GIPG020220181234SOA
I
D
(A)
10
2
10
1
10
0
in this area is
Operation
t
p
=100 µs
limited by R
DS(on)
t
p
=400 µs
t
p
=1 ms
t
p
=10 ms
T
j
≤
175 °C
T
c
= 25°C
single pulse
10
-1
10
-2
t
p
=200 ms
10
-1
10
0
10
1
V
DS
(V)
Figure 5.
Output characteristics
Figure 6.
Transfer characteristics
GIPG080720141111SA
I
D
(A)
350
V
GS
=8, 9, 10V
6V
7V
300
250
200
150
100
5V
50
0
2
3
V
DS
(V)
0
1
Figure 7.
Gate charge vs gate-source voltage
Figure 8.
Static drain-source on-resistance
GIPG080720141135SA
R
DS(on)
(m
Ω
)
V
GS
=10V
2.10
2.00
1.90
1.80
20 40 60 80
100
120 140 160
I
D
(A)
DS10259
–
Rev 3
page 5/18
STH240N10F7-2, STH240N10F7-6
Electrical characteristics (curves)
Figure 9.
Capacitance variations
Figure 10.
Normalized gate threshold voltage vs.
temperature
GIPG040620141429SA
C
(pF)
GIPG070720141441SA
V
GS(th)
(norm)
I
D
=250µA
Ciss
10000
1000
1
Coss
0.8
100
10
0.6
0.4
Crss
0
60
80
20
40
V
DS
(V)
-75
-25
25
75
T
J
(°C)
125
Figure 11.
Normalized V
(BR)DSS
vs. temperature
Figure 12.
Normalized on-resistance vs. temperature
GIPG070720141455SA
R
DS(on)
(norm)
V
GS
=10V
I
D
=60A
1.8
1.4
1
0.6
-75
-25
25
75
T
J
(°C)
125
Figure 13.
Source-drain diode forward characteristics
DS10259
–
Rev 3
page 6/18
STH240N10F7-2, STH240N10F7-6
Test circuits
3
Test circuits
Figure 14.
Test circuit for resistive load switching times
Figure 15.
Test circuit for gate charge behavior
V
DD
12 V
47 kΩ
1 kΩ
100 nF
R
L
2200
μF
3.3
μF
V
DD
+
I
G
= CONST
2.7 kΩ
V
D
R
G
D.U.
T
.
100 Ω
V
GS
pulse width
+
D.U.
T
.
V
GS
V
G
2200
μF
pulse width
47 kΩ
1 kΩ
AM01469v1
AM01468v1
Figure 16.
Test circuit for inductive load switching and
diode recovery times
Figure 17.
Unclamped inductive load test circuit
L
A
A
A
V
D
D
S
100 µH
D
fast
diode
2200
3.3
G
D.U.
T
.
B
µF
V
DD
+
µF
1000
µF
B
3.3
µF
I
D
B
+
V
DD
25 Ω
G
D.U.
T
.
D.U.
T
.
R
G
S
V
i
+
_
pulse width
AM01471v1
AM01470v1
Figure 18.
Unclamped inductive waveform
Figure 19.
Switching time waveform
V
(BR)DSS
t
on
t
d(on)
t
off
t
d(off)
V
D
t
r
t
f
90%
90%
10%
I
DM
I
D
V
DS
10%
V
GS
0
0
V
DD
V
DD
90%
10%
AM01472v1
AM01473v1
DS10259
–
Rev 3
page 7/18
STH240N10F7-2, STH240N10F7-6
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions
DS10259
–
Rev 3
page 8/18
STH240N10F7-2, STH240N10F7-6
H²PAK-2 package information
4.1
H²PAK-2 package information
Figure 20.
H²PAK-2 package outline
8159712_6
DS10259
–
Rev 3
page 9/18
STH240N10F7-2, STH240N10F7-6
H²PAK-2 package information
Table 7.
H²PAK-2 package mechanical data
mm
Dim.
Min.
4.30
0.03
1.17
4.98
0.50
0.78
10.00
7.40
15.30
1.27
4.93
6.85
1.5
Typ.
Max.
4.70
0.20
1.37
5.18
0.90
0.85
10.40
7.80
15.80
1.40
5.23
7.25
1.7
A
A1
C
e
E
F
H
H1
L
–
L1
L2
L3
L4
M
R
2.6
2.9
0.20
0°
0.60
8°
V
Figure 21.
H²PAK-2 recommended footprint
8159712_6
Note:
Dimensions are in mm.
DS10259
–
Rev 3
page 10/18
STH240N10F7-2, STH240N10F7-6
H²PAK-6 package information
4.2
H²PAK-6 package information
Figure 22.
H²PAK-6 package outline
8159693_Rev_8
DS10259
–
Rev 3
page 11/18
STH240N10F7-2, STH240N10F7-6
H²PAK-6 package information
Table 8.
H²PAK-6 package mechanical data
Dim.
mm
Min.
4.30
0.03
1.17
2.34
4.88
7.42
0.45
0.50
10.00
7.40
14.75
1.27
4.35
6.85
1.50
1.90
0.20
0°
Typ.
Max.
4.70
0.20
1.37
2.74
5.28
7.82
0.60
0.70
10.40
7.80
15.25
1.40
4.95
7.25
1.75
2.50
0.60
8°
A
A1
C
e
2.54
e1
e2
E
F
H
H1
L
L1
L2
L3
L4
M
R
V
DS10259
–
Rev 3
page 12/18
STH240N10F7-2, STH240N10F7-6
H²PAK-6 package information
Figure 23.
H²PAK-6 recommended footprint
footprint_Rev_8
Note:
Dimensions are in mm.
DS10259
–
Rev 3
page 13/18
STH240N10F7-2, STH240N10F7-6
Packing information
4.3
Packing information
Figure 24.
Tape outline
10 pitches cumulative
tolerance on tape +/- 0.2 mm
P0
P2
Top cover
tape
D
T
E
F
W
K0
B0
A0
D1
P1
U
s
er direction o
f
f
e
ed
R
Bending radius
U
s
er direction o
f
f
e
ed
AM08852v2
DS10259
–
Rev 3
page 14/18
STH240N10F7-2, STH240N10F7-6
Packing information
Figure 25.
Reel outline
T
REEL DIMENSIONS
40 mm min.
Access hole
At slot location
B
D
C
N
A
G measured
At hub
Tape slot
In core for
Full radius
Tape start
Table 9.
Tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
10.5
15.7
1.5
Max.
10.7
15.9
1.6
Min.
Max.
A0
B0
D
A
B
C
D
G
N
T
330
13.2
26.4
30.4
1.5
12.8
20.2
24.4
100
D1
E
1.59
1.65
11.4
4.8
1.61
1.85
11.6
5.0
F
K0
P0
P1
P2
R
3.9
4.1
11.9
1.9
12.1
2.1
Base quantity
Bulk quantity
1000
1000
50
T
0.25
23.7
0.35
24.3
W
DS10259
–
Rev 3
page 15/18
STH240N10F7-2, STH240N10F7-6
Revision history
Table 10.
Document revision history
Date
Version
Changes
07-May-2014
1
Initial release.
– Modified: title and description
23-Jul-2014
2
3
– Added:
Section 2.1: Electrical characteristics (curves)
– Minor text changes
Removed maturity status indication from cover page. Production data.
Minor text changes.
06-Feb-2018
DS10259
–
Rev 3
page 16/18
STH240N10F7-2, STH240N10F7-6
Contents
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
2
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
3
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
7
Package informatio
n
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
8
H²PAK-2 package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8
H²PAK-6 package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
10
Packing information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
13
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
16
DS10259
–
Rev 3
page 17/18
STH240N10F7-2, STH240N10F7-6
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST
products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST
products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of S
T
.
A
ll other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2018 STMicroelectronics – All rights reserved
DS10259
–
Rev 3
page 18/18
