STMicroelectronics-STHU36N60DM6AG
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STHU36N60DM6AG
Datasheet
Automotive-grade N-channel 600
V
,
8
4 mΩ typ., 29 A MDmesh DM6
Power MOSFET in an HU3PAK package
Features
V
R
DS(on)
max.
I
D
Order code
DS
TAB
STHU36N60DM6AG
600 V
99 mΩ
29 A
7
•
•
•
•
•
•
•
•
AEC-Q101 qualified
1
Fast-recovery body diode
Lower R
DS(on)
per area vs previous generation
HU3PAK
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Drain(TAB)
Excellent switching performance thanks to the extra driving source pin
Gate(1)
Applications
•
Switching applications
Driver
source (2)
Power
source (3, 4, 5, 6, 7)
Description
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-
recovery diode series. Compared with the previous MDmesh fast generation,
DM6 combines very low recovery charge (Q
rr
), recovery time (t
rr
) and excellent
improvement in R
DS(on)
per area with one of the most effective switching behaviors
available in the market for the most demanding high-efficiency bridge topologies and
ZVS phase-shift converters.
N-chG1DS2PS34567DTABZ
Product status link
Product summary
Order code
STHU36N60DM6AG
36N60DM6
Marking
Package
Packing
HU3PAK
T
a
pe and reel
DS13040
–
Rev 3
–
November 2021
For further information contact your local STMicroelectronics sales office.
STHU36N60DM6AG
Electrical ratings
1
Electrical ratings
Table 1.
Absolute maximum ratings
Parameter
Symbol
Value
±25
29
Unit
V
Gate-source voltage
V
GS
Drain current (continuous) at T
= 25 °C
C
I
D
A
Drain current (continuous) at T
= 100 °C
18
C
I
Drain current (pulsed)
103
210
100
1000
100
A
D
P
T
o
tal power dissipation at T
= 25 °C
W
TOT
C
Peak diode recovery voltage slope
Peak diode recovery current slope
MOSFET dv/dt ruggedness
V/ns
A/μs
V/ns
°C
T
Operating junction temperature range
Storage temperature range
J
-55 to 150
T
°C
stg
1. Pulse
width limited by safe operating area.
2.
3.
I
≤ 29 A, V
(peak) < V
, V
= 400 V
(BR)DSS DD
SD
DS
V
≤ 480 V
DS
Table 2.
Thermal data
Symbol
Parameter
Value
0.6
Unit
R
thJC
Thermal resistance, junction-to-case
Thermal resistance, junction-to-board
°C/W
R
30
thJB
1. When
mounted on 1 inch² FR-4, 2 Oz copper board.
Table 3.
Avalanche characteristics
Symbol
Parameter
Value
6
Unit
A
I
Avalanche current, repetitive or not repetitive (pulse width limited by T
)
jmax
AR
E
Single pulse avalanche energy (starting T = 25 °C, I
= I
, V
= 100 V)
j D
AR DD
630
mJ
AS
DS13040
–
Rev 3
page 2/15
STHU36N60DM6AG
Electrical characteristics
2
Electrical characteristics
T
C
= 25 °C unless otherwise specified
Table 4.
On/off-state
Symbol
Parameter
Test conditions
Min.
Typ. Max. Unit
V
V
GS
V
GS
V
GS
V
DS
V
DS
V
GS
= 0
V
, I
= 1
m
A
Drain-source breakdown voltage
600
V
(BR)DSS
D
= 0
V
, V
=
6
00 V
1
DS
I
Zero gate voltage drain current
µA
DSS
200
DS
C
I
= 0
V
, V
=
±
25 V
Gate body leakage current
Gate threshold voltage
±5
4.75
99
µA
V
GSS
GS
V
= V
, I
= 250 µA
3.25
4.00
84
GS(th)
DS(on)
GS
D
R
= 10
V
, I
=
1
4.5 A
D
Static drain-source on-resistance
mΩ
1. Specified
By Design – Not tested in production.
Table 5.
Dynamic
Symbol
Parameter
Input capacitance
Test conditions
Min.
Typ. Max. Unit
C
iss
–
–
–
–
–
–
–
–
1960
140
2
–
–
–
–
–
–
–
–
pF
pF
pF
pF
Ω
C
oss
V
V
= 100 V, f = 1 MHz, V
= 0 V
Output capacitance
DS
GS
C
rss
Reverse transfer capacitance
Equivalent output capacitance
Intrinsic gate resistance
T
o
tal gate charge
= 0 to 480
V
, V
= 0 V
C
oss eq.
335
1.5
46
DS
GS
R
G
f = 1 MHz open drain
Q
nC
nC
nC
g
V
DD
= 480 V, I
= 29 A, V
= 0 to 10 V
D
GS
Q
Gate-source charge
13
gs
Q
Gate-drain charge
22
gd
1.
C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
when V
increases from 0
oss DS
to 80% V
.
DSS
Table 6.
Switching times
Test conditions
Symbol
Parameter
Min.
Typ. Max. Unit
t
Turn-on delay time
Rise time
–
–
–
–
16
5.3
50
7
–
–
–
–
ns
ns
ns
ns
V
V
= 300
V
, I
=
1
4.5 A, R
= 4.7 Ω,
D G
d(on)
DD
= 10 V
t
r
GS
t
Turn-off delay time
Fall time
d(off)
t
f
DS13040
–
Rev 3
page 3/15
STHU36N60DM6AG
Electrical characteristics
Table 7.
Source-drain diode
Test conditions
Symbol
Parameter
Source-drain current
Min.
Typ. Max. Unit
I
–
–
–
–
–
–
–
–
–
29
103
1.6
A
A
SD
I
Source-drain current (pulsed)
Forward on voltage
SDM
V
I
I
= 29 A, V
= 0 V
GS
V
SD
SD
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
110
0.5
9
ns
µC
A
= 29 A, di/dt = 100 A/µs, V
= 60 V
SD
DD
Q
rr
I
RRM
t
I
= 29 A, di/dt = 100 A/µs, V
= 60
V
,
SD DD
215
2
ns
µC
A
rr
T = 150 °C
Q
j
rr
I
17
RRM
1. Pulse
width limited by safe operating area.
2. Pulsed:
pulse duration = 300 µs, duty cycle 1.5%.
DS13040
–
Rev 3
page 4/15
STHU36N60DM6AG
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area
Figure 2.
Thermal impedance
GC20540
GIPG200220171022SOA
I
D
in this area is
Operation
(A)
limited by R
DS(on)
10
2
10
1
10
0
t
p
=10 µs
t
p
=100 µs
t
p
=1 ms
T
j
≤
150 °C
T
c
= 25°C
single pulse
10
-1
10
-2
t
p
=10 ms
10
-1
10
0
10
1
10
2
V
DS
(V)
Figure 3.
Output characteristics
Figure 4.
Transfer characteristics
GIPG200220170940OCH
GIPG200220171020TCH
I
D
(A)
I
D
(A)
V
GS
= 9, 10 V
100
80
100
V
DS
=20 V
V
GS
=8 V
80
60
40
60
V
GS
=7 V
40
20
0
20
0
V
GS
=6 V
16
0
4
8
12
V
DS
(V)
4
5
6
7
8
9
V
GS
(V)
Figure 6.
Static drain-source on-resistance
Figure 5.
Gate charge vs gate-source voltage
GADG050620191344RID
R
DS(on)
(mΩ)
GIPG200220171022QVG
V
D
S
(V)
V
G
(V)
S
90
88
86
84
82
600
500
400
300
200
12
10
8
V
DD
=480 V
I
D
=29 A
V
DS
V
GS
=10 V
6
4
100
0
2
0
80
78
0
10
20
30
40
50
Q
g
(nC)
0
4
8
12 16 20 24 28 I
D
(A)
DS13040
–
Rev 3
page 5/15
STHU36N60DM6AG
Electrical characteristics (curves)
Figure 8.
Normalized gate threshold voltage vs
temperature
Figure 7.
Capacitance variations
GIPG200220170940CVR
C
(pF)
GIPG200220170937VTH
V
GS(th)
(norm.)
10
4
10
3
10
2
1.1
I
D
= 250 µA
C
ISS
1.0
0.9
0.8
C
OSS
f = 1 MHz
10
1
10
0
C
RSS
0.7
0.6
10
-1
10
0
10
1
10
2
V
DS
(V)
-75
-25
25
75
125
T
j
(°C)
Figure 10.
Normalized V
(BR)DSS
vs temperature
Figure 9.
Normalized on-resistance vs temperature
GADG060620191316RON
R
DS(on)
(norm.)
GADG050620191402BDV
V
(BR)DSS
(norm.)
2.5
1.10
1.05
1.00
0.95
I
D
= 1 mA
2.0
V
GS
= 10 V
I
D
= 14.5 A
1.5
1.0
0.5
0.0
0.90
0.85
-75
-25
25
75
125
T
j
(°C)
-75
-25
25
75
125
T
j
(°C)
Figure 12.
Output capacitance stored energy
Figure 11.
Source-drain diode forward characteristics
GADG050620191424EOS
E
OSS
(µJ)
GIPG200220170940SDF
V
SD
(V)
1.1
18
T
j
= -50 °C
1.0
0.9
15
12
9
T
j
= 25 °C
0.8
0.7
T
j
= 150 °C
0.6
6
0.5
0.4
3
0
0
4
8
12 16 20 24 28 I
SD
(A)
0
100 200 300 400 500 600
V
DS
(V)
DS13040
–
Rev 3
page 6/15
STHU36N60DM6AG
Test circuits
3
Test circuits
Figure 13.
Switching times test circuit for resistive load
Figure 14.
Test circuit for gate charge behavior
V
DD
12V
47kΩ
100nF
1kΩ
2200
3.3
µF
R
L
µF
I
G
=CONST
V
DD
+
100Ω
V
i
≤
V
GS
D.U.
T
.
V
D
R
G
2200
µF
V
GS
+
V
G
2.7kΩ
47kΩ
D.U.
T
.
P
W
GND1
(driver signal)
GND2
(power)
1kΩ
P
W
GND1
GND2
AM15855v1
AM15856v1
Figure 15.
Test circuit for inductive load switching and
diode recovery times
Figure 16.
Unclamped inductive load test circuit
A
A
A
L
D
S
FAST
DIODE
L=100µH
G
D.U.
T
.
B
V
D
2200
µF
3.3
µF
3.3
µF
V
DD
1000
µF
B
B
+
V
DD
+
D
S
25Ω
I
D
G
R
G
D.U.
T
.
V
i
D.U.
T
.
P
w
GND2
GND1
GND1
GND2
AM15858v1
AM15857v1
Figure 17.
Unclamped inductive waveform
Figure 18.
Switching time waveform
V
(BR)DSS
t
on
t
d(on)
t
off
t
d(off)
t
r
t
f
V
D
90%
90%
I
DM
V
DS
10%
V
GS
10%
0
0
I
D
V
DD
V
DD
90%
10%
AM01473v1
AM01472v1
DS13040
–
Rev 3
page 7/15
STHU36N60DM6AG
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
4.1
HU3PAK package information
Figure 19.
HU3PAK package outline
×
DM00674007_2
DS13040
–
Rev 3
page 8/15
STHU36N60DM6AG
HU3PAK package information
Table 8.
HU3PAK package mechanical data
Dimensions
mm
Ref.
Min.
Typ.
3.50
0.05
0.60
0.70
0.90
0.50
0.50
11.80
8.955
14.00
12.40
7.80
1.27
18.58
0.10
2.52
3.05
1.00
0.26
0.125
1.93
2.24
4.54
3.00
2.50
0.35
3.90
0.30
0.90
0.67
9.38
0 °
Max.
A
A1
b
3.40
3.60
0.50
0.50
0.80
0.40
0.40
11.70
8.80
13.90
12.30
7.75
0.70
1.00
1.00
0.60
0.60
11.90
9.10
14.10
12.50
7.85
b2
b3
c
c2
D
D1
E
E1
E2
e
H
18.00
2.40
0.90
19.00
2.60
1.10
aaa
L
L1
L2
L3
L4
L5
L6
L7
F1
F2
F3
N1
N2
N3
T
0.075
1.83
2.14
4.44
2.90
2.40
0.25
3.80
0.25
0.80
0.50
9.18
0.175
2.03
2.34
4.64
3.10
2.60
0.45
4.00
0.45
1.00
0.70
9.43
8 °
T2
V1
V2
0 °
8 °
DS13040
–
Rev 3
page 9/15
STHU36N60DM6AG
HU3PAK package information
Figure 20.
HU3PAK recommended footprint (dimensions in mm)
×
×
DS13040
–
Rev 3
page 10/15
STHU36N60DM6AG
HU3PAK packing information
4.2
HU3PAK packing information
Figure 21.
HU3PAK carrier tape outline
Table 9.
HU3PAK tape mechanical data
Value
Dimension
mm
A0
B0
D
14.40 ±0.10
19.70
1.50 ±0.10
1.75 ±0.10
15.65 ±0.10
11.00
E
F
I0
I1
11.60 ±0.10
8.00
I2
I3
7.00
K0
P0
P1
P2
T
4.20
4.00 ±0.10
20.00 ±0.10
2.00 ±0.10
0.40 ±0.50
32.00 ±0.30
W
DS13040
–
Rev 3
page 11/15
STHU36N60DM6AG
HU3PAK packing information
Figure 22.
HU3PAK reel outline
Table 10.
HU3PAK reel mechanical data
Value
Dimension
mm
Reel width
32.0
Reel inner width
Reel outer width
33.4 ±1.0
37.4 ±1.0
DS13040
–
Rev 3
page 12/15
STHU36N60DM6AG
Revision history
Table 11.
Document revision history
Changes
Date
Revision
05-Jun-2019
1
Initial release.
Modified
Features
on cover page.
Modified
T
a
ble 1. Absolute maximum ratings
and
T
a
ble 4. On/off-state
.
Modified
Section 4 Package information
.
Minor text changes.
06-Oct-2021
11-Nov-2021
2
3
Minor text changes.
DS13040
–
Rev 3
page 13/15
STHU36N60DM6AG
Contents
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
2
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
3
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
7
Package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
8
HU3PAK package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8
HU3PAK packing information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
DS13040
–
Rev 3
page 14/15
STHU36N60DM6AG
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T
.
F
or additional information about ST trademarks, please refer to
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. All other product or service
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DS13040
–
Rev 3
page 15/15
