STMicroelectronics-STI26NM60N
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STB26NM60N, STF26NM60N, STI26NM60N
STP26NM60N, STW26NM60N
N-channel 600
V
,
0
.135
Ω
typ., 20 A MDmesh™ II Power MOSFET
in D
2
P
A
K, I
2
P
A
K, TO-220, TO-220FP and TO-247 packages
Datasheet — production data
TAB
Features
TAB
R
DS(on)
max
Type
V
DSS
I
D
3
3
3
2
2
1
2
1
STB26NM60N
STF26NM60N
STI26NM60N
STP26NM60N
STW26NM60N
600 V
600 V
600 V
600 V
600 V
< 0.165
Ω
< 0.165
Ω
< 0.165
Ω
< 0.165
Ω
< 0.165
Ω
20 A
20 A
20 A
20 A
20 A
1
TO-220
TO-220FP
I²
P
A
K
TAB
3
3
2
1
■
100% avalanche tested
1
D²
P
A
K
■
Low input capacitance and gate charge
■
Low gate input resistance
TO-247
Application
Figure 1.
Internal schematic diagram
■
Switching applications
$ꢄ
4
!
“ꢅ ꢆꢇ
Description
These devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh™ technolog
y
.
T
his revolutionary Power
MOSFET applies a new vertical structure to the
company’s strip layout to yield a device with one
of the world’s lowest on-resistance and gate
charge, making it suitable for the most demanding
high-efficiency converters.
‘ꢄꢂꢇ
3ꢄꢈꢇ
3#ꢀꢁꢂꢃꢀ
Table 1.
Device summary
Order codes
Marking
Package
D²
P
A
K
Packaging
STB26NM60N
STF26NM60N
STI26NM60N
STP26NM60N
T
a
pe and reel
TO-220FP
I²
P
A
K
26NM60N
T
u
be
TO-220
TO-247
STW26NM60N
June 2012
Doc ID 15642 Rev 5
1/23
This is information on a product in full production.
23
Contents
STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
2/23
Doc ID 15642 Rev 5
STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Value
Parameter
Unit
D²
P
A
K, I²PAK,
TO-220, TO-247
TO-220FP
V
DS
V
GS
I
D
Drain-source voltage
600
25
V
V
Gate-source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
20
12.6
80
20
(1)
12.6
(1)
80
(1)
35
A
A
I
D
(2)
I
DM
A
P
TOT
T
o
tal dissipation at T
C
= 25 °C
Derating factor
140
1.12
W
0.28
W/°C
V/ns
dv/dt
(3)
Peak diode recovery voltage slope
15
Insulation withstand voltage (RMS) from
V
ISO
all three leads to external heat sink
(t=1 s;T
C
=25 °C)
2500
V
T
stg
T
j
Storage temperature
–55 to 150
150
°C
°C
Max. operating junction temperature
1. Limited
by maximum junction temperature.
2. Pulse
width limited by safe operating area.
3.
I
≤
20 A, di/dt
≤
400 A/µs, V
≤
V
, V
=
80% V
SD
DSpeak
(BR)DSS DD
(BR)DSS
T
a
ble 3.
Symbol
Thermal data
Parameter
Value
Unit
TO-247 TO-220
I²PAK D²PAK TO-220FP
Thermal resistance junction-
case max
R
thj-case
R
thj-amb
0.89
62.5
3.6
°C/W
°C/W
°C/W
Thermal resistance junction-
ambient max
50
62.5
Thermal resistance junction-pcb
max
(1)
R
thj-pcb
30
1. When
mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec.
Doc ID 15642 Rev 5
3/23
Electrical ratings
STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N
Avalanche characteristics
T
a
ble 4.
Symbol
Parameter
Value
Unit
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
I
AS
6
A
Single pulse avalanche energy
E
AS
610
mJ
(starting T
J
=25 °C, I
D
=I
AS
, V
DD
=50 V)
4/23
Doc ID 15642 Rev 5
STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N
Electrical characteristics
2
Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
T
a
ble 5.
Symbol
On/off states
Parameter
Test conditions
I
D
= 1 mA, V
GS
= 0
Min. Typ. Max. Unit
Drain-source
V
(BR)DSS
600
V
breakdown voltage
Zero gate voltage
V
DS
= 600 V
1
µA
µA
I
DSS
drain current (V
GS
= 0)
V
DS
= 600
V
,
T
C
= 125 °C
100
Gate-body leakage
current (V
DS
= 0)
I
GSS
V
GS
=
25 V
0.1
4
µA
V
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10
V
,
I
D
= 10 A
2
3
Static drain-source on-
resistance
R
DS(on)
0.135 0.165
Ω
T
a
ble 6.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max.
Unit
Input capacitance
Output capacitance
C
iss
C
oss
C
rss
1800
115
1.1
pF
pF
pF
V
DS
= 50
V
, f = 1
M
Hz,
–
–
V
GS
= 0
Reverse transfer
capacitance
Equivalent output
capacitance
(1)
C
oss eq.
V
GS
= 0, V
DS
= 0 to 480 V
V
DD
= 480
V
,
I
D
= 20 A,
–
–
310
–
–
pF
Q
g
Q
gs
Q
gd
T
o
tal gate charge
Gate-source charge
Gate-drain charge
60
8.5
30
nC
nC
nC
V
GS
= 10
V
,
f=1 MHz Gate DC Bias=0
T
e
st signal level = 20 mV
open drain
R
g
Gate input resistance
–
2.8
–
Ω
1.
C
is defined as a constant equivalent capacitance giving the same charging time as C
when V
DS
oss eq.
oss
increases from 0 to 80% V
DS
T
a
ble 7.
Symbol
Switching times
Parameter
Test conditions
Min. Typ. Max.
Unit
t
d(on)
t
r
t
d(off)
t
f
T
u
rn-on delay time
Rise time
13
25
85
50
ns
ns
ns
ns
V
DD
= 300
V
,
I
D
= 10 A
R
G
= 4.7
Ω
V
GS
= 10 V
–
–
T
u
rn-off delay time
Fall time
Doc ID 15642 Rev 5
5/23
Electrical characteristics
STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N
T
a
ble 8.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max Unit
I
SD
Source-drain current
20
80
A
A
–
–
(1)
I
SDM
Source-drain current (pulsed)
(2)
V
SD
Forward on voltage
I
SD
= 20 A, V
GS
= 0
1.5
V
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 20 A, di/dt = 100 A/µs
V
DD
= 60 V
370
5.8
ns
µC
A
Q
rr
–
–
I
RRM
31.6
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 20 A, di/dt = 100 A/µs
450
7.5
ns
µC
A
Q
rr
V
DD
= 60
V
,
T
j
= 150 °C
I
RRM
32.5
1. Pulse
width limited by safe operating area
2. Pulsed:
pulse duration = 300 µs, duty cycle 1.5%
6/23
Doc ID 15642 Rev 5
STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N
Electrical characteristics
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220,
D²
P
A
K and I²
P
A
K
Figure 3.
Thermal impedance for TO-220,
D²
P
A
K and I²
P
A
K
AM0
33
14v1
I
D
(A)
1
µs
10
10
µs
100
µs
1m
s
1
10m
s
Tj=150°C
Tc=25°C
S
inlge
p
u
l
s
e
0.1
10
V
D
S
(V)
0.1
1
100
Figure 4.
Safe operating area for TO-220FP
Figure 5.
Thermal impedance for TO-220FP
AM0
33
15v1
I
D
(A)
10
10
µs
100
µs
1
1m
s
10m
s
Tj=150°C
Tc=25°C
0.1
S
inlge
p
u
l
s
e
0.01
10
V
D
S
(V)
0.1
1
100
Figure 6.
Safe operating area for TO-247
Figure 7.
Thermal impedance for TO-247
AM0
33
16v1
I
D
(A)
10
10
µs
100
µs
1
1m
s
Tj=150°C
Tc=25°C
10m
s
0.1
S
inlge
p
u
l
s
e
0.01
10
V
D
S
(V)
0.1
1
100
Doc ID 15642 Rev 5
7/23
Electrical characteristics
STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N
Figure 8.
Output characteristics
Figure 9.
Transfer characteristics
Figure 10.
Transconductance
Figure 11.
Static drain-source on-resistance
AM0
33
1
8
v1
AM0
33
17v1
G
F
S
(
S
)
R
D
S
(on)
(
Ω
)
T
J
=-50°C
0.16
V
G
S
=10V
8
.5
T
J
=25°C
0.15
0.14
0.1
3
0.12
6.5
4.5
2.5
0.5
T
J
=150°C
0.11
0.1
10
15
20
10
15
5
5
20
I
D
(A)
I
D
(A)
0
0
Figure 12.
Gate charge vs gate-source voltage
Figure 13.
Capacitance variations
AM0
33
20v1
AM0
33
19v1
V
G
S
C
(V)
(pF)
V
DD
=4
8
0V
=20A
12
I
D
10000
1000
10
8
Ci
ss
6
100
10
1
Co
ss
Cr
ss
4
2
0
20
40
0.1
100
50
60
Q
g
(nC)
V
D
S
(V)
0
10
3
0
1
10
8/23
Doc ID 15642 Rev 5
STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N
Electrical characteristics
Figure 14.
Normalized gate threshold voltage
Figure 15.
Normalized on resistance vs
vs temperature
temperature
AM0
33
21v1
AM0
33
22v1
V
G
S
(th)
R
D
S
(on)
(norm)
(norm)
1.1
2.1
I
D
= 250
µ
A
V
G
S
= 10 V
1.7
1.0
1.
3
0.9
0.
8
0.7
0.9
0.5
-50
-50
-25
-25
0
25 50 75
T
J
(°C)
0
25 50 75
T
J
(°C)
100
100
Figure 16.
Source-drain diode forward
characteristics
Figure 17.
Normalized B
VDSS
vs temperature
AM0
33
24v1
AM0902
8
v1
V
(V)
S
D
V
D
S
(norm)
T
J
=-50°C
I
D
=1mA
1.10
1.2
1.0
8
1.06
T
J
=25°C
1.0
1.04
1.02
1.00
0.9
8
0.96
0.
8
0.6
0.4
T
J
=150°C
0.94
0.92
0
-50
-25
5
10
15
I
S
D
(A)
0
25 50
75
T
J
(°C)
100
Doc ID 15642 Rev 5
9/23
Test circuits
STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N
3
Test circuits
Figure 18.
Switching times test circuit for
resistive load
Figure 19.
Gate charge test circuit
V
DD
12V
47k
Ω
1k
Ω
100nF
2200
3
.
3
μ
F
R
L
μ
F
I
G
=CON
S
T
V
DD
100
Ω
V
i
=20V=V
GMAX
D.U.
T
.
V
D
R
G
V
G
S
2200
μ
F
D.U.
T
.
V
G
2.7k
Ω
47k
Ω
P
W
1k
Ω
P
W
AM0146
8
v1
AM01469v1
Figure 20.
Test circuit for inductive load
switching and diode recovery times
Figure 21.
Unclamped inductive load test
circuit
L
A
A
A
B
D
FA
S
T
DIODE
L=100
μ
H
V
D
G
2200
μ
F
D.U.
T
.
B
3
.
3
μ
F
V
DD
S
3
.
3
μ
F
1000
μ
F
B
V
DD
25
Ω
I
D
D
G
R
G
S
V
i
D.U.
T
.
P
w
AM01470v1
AM01471v1
Figure 22.
Unclamped inductive waveform
Figure 23.
Switching time waveform
t
on
t
off
td
off
V
(BR)D
SS
t
r
t
f
td
on
V
D
90
%
10
%
90
%
I
DM
10
%
V
D
S
I
D
0
0
V
DD
V
DD
90
%
V
G
S
10
%
AM01472v1
AM0147
3
v1
10/23
Doc ID 15642 Rev 5
STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECO
P
A
CK
®
packages, depending on their level of environmental compliance. ECO
P
ACK
®
is an ST trademark.
Doc ID 15642 Rev 5
11/23
Package mechanical data STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N
T
a
ble 9.
Dim.
D²
P
A
K (TO-263) mechanical data
mm
Min.
Typ.
Max.
A
A1
b
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
10
4.60
0.23
0.93
1.70
0.60
1.36
9.35
b2
c
c2
D
D1
E
10.40
E1
e
8.50
2.54
e1
H
4.88
15
5.28
15.85
2.69
2.79
1.40
1.75
J1
L
2.49
2.29
1.27
1.30
L1
L2
R
0.4
V2
0°
8°
12/23
Doc ID 15642 Rev 5
STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N Package mechanical data
Figure 24.
D²
P
A
K (TO-263) drawing
0079457_T
Figure 25.
D²
P
A
K footprint
(a)
16.90
12.20
5.0
8
1.60
3
.50
9.75
Footprint
a. All
dimension are in millimeters
Doc ID 15642 Rev 5
13/23
Package mechanical data STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N
Table 10.
I²
P
A
K (TO-262) mechanical data
mm.
typ
DIM.
min.
max.
A
A1
b
4.40
2.40
0.61
1.14
0.49
1.23
8.95
2.40
4.95
10
4.60
2.72
0.88
1.70
0.70
1.32
9.35
2.70
5.15
10.40
14
b1
c
c2
D
e
e1
E
L
13
L1
L2
3.50
1.27
3.93
1.40
14/23
Doc ID 15642 Rev 5
STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N Package mechanical data
Figure 26.
I²
P
A
K (TO-262) drawing
00049
8
2_Rev_H
Doc ID 15642 Rev 5
15/23
Package mechanical data STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N
T
a
ble 11.
TO-220 type A mechanical data
mm
Dim.
Min.
Typ.
Max.
A
b
4.40
0.61
1.14
0.48
15.25
4.60
0.88
1.70
0.70
15.75
b1
c
D
D1
E
1.27
10
10.40
2.70
5.15
1.32
6.60
2.72
14
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
∅
P
Q
3.50
3.93
16.40
28.90
3.75
2.65
3.85
2.95
16/23
Doc ID 15642 Rev 5
STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N Package mechanical data
Figure 27.
TO-220 type A drawing
00159
88
_typeA_Rev_
S
Doc ID 15642 Rev 5
17/23
Package mechanical data STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N
T
a
ble 12.
TO-220FP mechanical data
mm
Dim.
Min.
Typ.
Max.
A
B
4.4
2.5
4.6
2.7
D
2.5
2.75
0.7
E
0.45
0.75
1.15
1.15
4.95
2.4
F
1
F1
F2
G
1.70
1.70
5.2
G1
H
2.7
10
10.4
L2
L3
L4
L5
L6
L7
Dia
16
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
16.4
9.3
3
3.2
18/23
Doc ID 15642 Rev 5
STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N Package mechanical data
Figure 28.
TO-220FP drawing
7012510_Rev_K_B
Doc ID 15642 Rev 5
19/23
Packaging mechanical data
STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N,
5
Packaging mechanical data
Table 13.
D²
P
A
K (TO-263) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
Min.
Max.
A0
B0
D
10.5
15.7
1.5
10.7
15.9
1.6
A
B
C
D
G
N
T
330
1.5
12.8
20.2
24.4
100
13.2
26.4
30.4
D1
E
1.59
1.65
11.4
4.8
1.61
1.85
11.6
5.0
F
K0
P0
P1
P2
R
3.9
4.1
11.9
1.9
12.1
2.1
Base qty
Bulk qty
1000
1000
50
T
0.25
23.7
0.35
24.3
W
20/23
Doc ID 15642 Rev 5
STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N
Figure 29.
Tape
Packagin
g
m
echanical
10 pitche
s
c
u
m
u
l
a
tive
toler
a
nce on t
a
pe +/- 0.2 mm
P0
P2
Top cover
D
T
t
a
pe
E
F
W
K0
B0
A0
D1
P1
U
s
er direction of feed
R
Bending r
a
di
us
U
s
er direction of feed
AM0
88
52v2
Figure 30.
Reel
T
REEL DIMEN
S
ION
S
40mm min.
Acce
ss
hole
At
s
l ot
loc
a
tion
B
D
C
N
A
G me
asu
red
a
t h
ub
F
u
ll r
a
di
us
T
a
pe
s
lot
in core for
t
a
pe
s
t
a
rt 25 mm min.
width
AM0
88
51v2
Doc ID 15642 Rev 5
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Revision history
STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N
6
Revision history
T
a
ble 14.
Document revision history
Date
Revision
Changes
29-Apr-2009
17-Dec-2009
20-Jun-2011
1
2
3
First release
Added new package, mechanical data: D²
P
A
K
Inserted device in I
2
P
A
K.
13-Mar-2012
20-Jun-2012
4
5
Updated title on the coverpage.
Minor text changes.
22/23
Doc ID 15642 Rev 5
STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N
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