STMicroelectronics-STI33N60M6
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STI33N60M6
Datasheet
N-channel 600
V
,
1
05 mΩ typ., 25 A, MDmesh M6 Power MOSFET in an I²PAK
package
Features
TAB
V
R
max.
I
D
Order code
STI33N60M6
DS
DS(on)
600 V
125 mΩ
25 A
•
•
•
•
•
Reduced switching losses
Lower R
DS(on)
per area vs previous generation
Low gate input resistance
100% avalanche tested
3
2
1
I²PAK
Zener-protected
D(2, TAB)
Applications
•
•
•
Switching applications
G(1)
LLC converters
Boost PFC converters
S(3)
AM01475V1
Description
The new MDmesh M6 technology incorporates the most recent advancements to the
well-known and consolidated MDmesh family of SJ MOSFE
T
s
. STMicroelectronics
builds on the previous generation of MDmesh devices through its new M6
technology, which combines excellent R
DS(on)
per area improvement with one of the
most effective switching behaviors available, as well as a user-friendly experience for
maximum end-application efficiency.
Product status link
Product summary
Order code
Marking
STI33N60M6
33N60M6
I²PAK
Package
Packing
Tube
DS13004
–
Rev 1
–
April 2019
For further information contact your local STMicroelectronics sales office.
STI33N60M6
Electrical ratings
1
Electrical ratings
Table 1.
Absolute maximum ratings
Parameter
Symbol
Value
±25
25
Unit
V
Gate-source voltage
V
GS
Drain current (continuous) at T
Drain current (continuous) at T
= 25 °C
case
case
I
A
D
= 100 °C
15.8
78
I
Drain current (pulsed)
A
D
P
T
o
tal power dissipation at T
= 25 °C
case
190
15
W
TOT
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Storage temperature range
V/ns
100
T
stg
-55 to 150
°C
T
Operating junction temperature range
j
1. Pulse
width limited by safe operating area.
2.
3.
I
≤ 25 A, di/dt ≤ 400 A/μs, V
< V
, V
= 400 V
(BR)DSS DD
SD
DS(peak)
V
≤ 480 V
DS
Table 2.
Thermal data
Parameter
Symbol
Value
0.66
Unit
°C/W
°C/W
R
thj-case
Thermal resistance junction-case
Thermal resistance junction-ambient
R
thj-amb
62.5
Table 3.
Avalanche characteristics
Symbol
Parameter
Value
Unit
Avalanche current, repetitive or non-repetitive
I
4
A
AR
(pulse width limited by T
)
Jmax
Single pulse avalanche energy
(starting T
= 25 °C, I
= I
, V
= 50 V)
E
500
mJ
AS
j
D
AR
DD
DS13004
–
Rev 1
page 2/13
STI33N60M6
Electrical characteristics
2
Electrical characteristics
(T
case
= 25 °C unless otherwise specified)
Table 4.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
V
V
V
T
= 0
V
, I
= 1
m
A
Drain-source breakdown voltage
600
V
(BR)DSS
GS
GS
GS
D
= 0
V
, V
=
6
00 V
1
DS
I
= 0
V
, V
=
6
00 V,
Zero gate voltage drain current
µA
DSS
DS
100
case
I
V
= 0
V
, V
=
±
25 V
GS
Gate-body leakage current
Gate threshold voltage
±5
µA
V
GSS
DS
DS
GS
V
V
V
= V
, I
= 250 µA
3.25
4
4.75
125
GS(th)
DS(on)
GS
D
R
= 10
V
, I
=
1
2.5 A
D
Static drain-source on-resistance
105
mΩ
1. Defined
by design, not subject to production test.
Table 5.
Dynamic
Symbol
Parameter
Input capacitance
Test conditions
Min.
Typ.
1515
128
4.2
Max.
Unit
C
iss
–
–
–
–
–
–
–
–
–
–
–
–
–
–
C
oss
V
V
= 100
V
, f = 1
M
Hz, V
= 0 V
Output capacitance
pF
DS
GS
C
Reverse transfer capacitance
Equivalent output capacitance
Intrinsic gate resistance
T
o
tal gate charge
rss
= 0 to 480
V
, V
= 0 V
C
oss eq.
269
1.5
pF
Ω
DS
GS
R
f = 1 MHz, I
= 0 A
D
G
Q
V
V
= 480
V
, I
=
2
5 A,
33.4
7.2
g
DD
D
= 0 to 10 V
Q
GS
Gate-source charge
gs
nC
Q
Gate-drain charge
–
16.3
–
gd
1.
C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
when V
increases from 0
oss DS
to 80% V
.
DSS
Table 6.
Switching times
Test conditions
Symbol
Parameter
Turn-on delay time
Min.
Typ.
19.5
33
Max.
Unit
t
V
= 300
V
, I
=
1
2.5 A,
–
–
–
–
–
–
d(on)
DD
D
R
G
= 4.7 Ω, V
= 10 V
t
GS
Rise time
r
ns
t
Turn-off delay time
38.5
d(off)
t
Fall time
–
7.5
–
f
DS13004
–
Rev 1
page 3/13
STI33N60M6
Electrical characteristics
Table 7.
Source-drain diode
Test conditions
Symbol
Parameter
Source-drain current
Min.
Typ.
Max.
25
Unit
A
I
–
–
–
–
–
SD
I
Source-drain current (pulsed)
Forward on voltage
78
A
SDM
V
I
I
= 25 A, V
= 0 V
1.6
V
SD
GS
SD
t
= 25 A, di/dt = 100 A/µs,
= 60 V
Reverse recovery time
Reverse recovery charge
265
ns
µC
rr
SD
V
DD
Q
rr
3.07
I
Reverse recovery current
–
23.2
A
RRM
t
I
V
= 25 A, di/dt = 100 A/µs,
SD
Reverse recovery time
–
–
374
ns
rr
= 60
V
, T
=
1
50 °C
j
DD
Q
Reverse recovery charge
5.78
µC
rr
I
Reverse recovery current
–
30.9
A
RRM
1. Pulse
width is limited by safe operating area.
2. Pulsed:
pulse duration = 300 µs, duty cycle 1.5%
DS13004
–
Rev 1
page 4/13
STI33N60M6
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 2.
Thermal impedance
Figure 1.
Safe operating area
GC20540_ZTH
GIPG210620181235SOA
I
D
(A)
K
10
-1
10
-2
δ=0.5
δ=0.2
t
p
=1 µs
10
1
t
p
=10 µs
t
p
=100 µs
0.1
0.05
0.02
0.01
t
p
=1 ms
in this area is
limited by R
DS(on)
Operation
t
p
=10 ms
10
0
T
J
≤
150 °C
T
C
=25 °C
V
GS
=10 V
Single pulse
single pulse
10
-1
-5
10
-2
V
DS
(V)
10
10
-4
10
10
-1
-3
t
p
(s)
10
-1
10
0
10
1
10
2
Figure 3.
Output characteristics
Figure 4.
Transfer characteristics
GIPG150620181232OCH
GIPG150620181233TCH
I
D
I
D
(A)
(A)
V
GS
= 9, 10 V
70
60
50
40
30
20
70
60
50
40
30
20
V
DS
= 20 V
V
GS
=8 V
V
GS
=7 V
V
GS
=6 V
V
GS
=5 V
10
0
10
0
0
4
8
12
16
V
DS
(V)
3
4
5
6
7
8
9
V
GS
(V)
Figure 5.
Gate charge vs gate-source voltage
Figure 6.
Static drain-source on-resistance
GIPG150620181237QVG
GIPG150620181231RID
V
GS
(V)
V
DS
(V)
R
DS(on)
(Ω)
V
DD
= 480 V
I
D
= 25 A
12
10
8
600
500
400
300
200
100
V
GS
= 10 V
0.115
V
DS
0.110
0.105
6
4
0.100
0.095
2
0
0
0
8
16
24
32
40
Q
g
(nC)
0
4
8
12
16
20
24
I
D
(A)
DS13004
–
Rev 1
page 5/13
STI33N60M6
Electrical characteristics (curves)
Figure 8.
Normalized gate threshold voltage vs
temperature
Figure 7.
Capacitance variations
GIPG150620181232CVR
C
(pF)
GIPG150620181230VTH
V
GS(th)
(norm.)
I
D
= 250 μA
1.1
10
4
10
3
10
2
C
ISS
1.0
0.9
0.8
C
OSS
C
RSS
f = 1 MHz
10
1
10
0
0.7
0.6
10
-1
10
0
10
1
10
2
V
DS
(V)
-75
-25
25
75
125
T
J
(°C)
Figure 10.
Normalized V
(BR)DSS
vs temperature
Figure 9.
Normalized on-resistance vs temperature
GIPG150620181231RON
R
DS(on)
(norm.)
GIPG150620181231BDV
V
(BR)DSS
(norm.)
V
GS
= 10 V
2.5
I
D
= 1 mA
1.08
1.04
1.00
0.96
2.0
1.5
1.0
0.5
0.0
0.92
0.88
-75
-25
25
75
125
T
J
(°C)
-75
-25
25
75
125
T
J
(°C)
Figure 12.
Source-drain diode forward characteristics
Figure 11.
Output capacitance stored energy
GADG200620181116EOS
E
OSS
GIPG150620181232SDF
V
SD
(V)
(µJ)
14
1.1
12
10
8
T
J
= -50 °C
1.0
0.9
T
J
= 25 °C
0.8
6
4
0.7
T
J
= 150 °C
2
0
0.6
0.5
0
100 200 300 400 500 600
V
DS
(V)
0
4
8
12
16
20
24
I
SD
(A)
DS13004
–
Rev 1
page 6/13
STI33N60M6
Test circuits
3
Test circuits
Figure 13.
Test circuit for resistive load switching times
Figure 14.
Test circuit for gate charge behavior
V
DD
RL
R
L
2200
μF
3.3
μF
I
G
= CONST
2.7 kΩ
V
DD
+
D.U.
T
.
100 Ω
V
GS
V
D
R
G
pulse width
+
D.U.
T
.
V
G
V
GS
2200
μF
pulse width
47 kΩ
1 kΩ
AM01469v10
AM01468v1
Figure 15.
Test circuit for inductive load switching and
diode recovery times
Figure 16.
Unclamped inductive load test circuit
L
A
A
A
D
S
V
D
100 µH
D
fast
G
D.U.
T
.
B
diode
2200
3.3
µF
V
DD
1000
µF
B
+
3.3
µF
µF
B
+
V
DD
25 Ω
I
D
G
D.U.
T
.
R
G
S
+
_
D.U.
T
.
V
i
pulse width
AM01471v1
AM01470v1
Figure 18.
Switching time waveform
Figure 17.
Unclamped inductive waveform
t
on
t
d(on)
t
off
t
d(off)
V
(BR)DSS
t
r
t
f
V
D
90%
90%
I
DM
V
DS
10%
V
GS
10%
0
0
I
D
V
DD
V
DD
90%
AM01472v1
10%
AM01473v1
DS13004
–
Rev 1
page 7/13
STI33N60M6
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
DS13004
–
Rev 1
page 8/13
STI33N60M6
I²PAK package information
4.1
I²PAK package information
Figure 19.
I²PAK package outline
0004982_Rev_H
DS13004
–
Rev 1
page 9/13
STI33N60M6
I²PAK package information
Table 8.
I²PAK package mechanical data
mm
Dim.
Min.
4.40
2.40
0.61
1.14
0.49
1.23
8.95
2.40
4.95
10
Typ.
Max.
4.60
2.72
0.88
1.70
0.70
1.32
9.35
2.70
5.15
10.40
14
A
A1
b
–
–
–
–
–
–
–
–
–
–
–
–
–
b1
c
c2
D
e
e1
E
L
13
L1
L2
3.50
1.27
3.93
1.40
DS13004
–
Rev 1
page 10/13
STI33N60M6
Revision history
Table 9.
Document revision history
Date
Version
Changes
17-Apr-2019
1
Initial release.
DS13004
–
Rev 1
page 11/13
STI33N60M6
Contents
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
2
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
3
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
7
Package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
8
I²PAK package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
DS13004
–
Rev 1
page 12/13
STI33N60M6
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST
products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST
products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of S
T
.
F
or additional information about ST trademarks, please refer to
www.st.com/trademarks
. All other product or service
names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2019 STMicroelectronics – All rights reserved
DS13004
–
Rev 1
page 13/13
