STMicroelectronics-STI33N65M2

STB33N65M2, STF33N65M2,  

STP33N65M2, STI33N65M2  

N-channel 650 V, 0.117

Ω

typ., 24 A MDmesh™ M2  

Power MOSFE

T

s

i

n D²PAK, TO-220F

P

,

T

O-220 and I²PAK packages  

Datasheet  

–

production data  

Features  

7$%

 

7$%

 

R

DS(on)  

max  

Order codes  

V

DS  

I

D  

STB33N65M2  

STF33N65M2  

STP33N65M2  

STI33N65M2  

ꢁ

ꢁ

ꢀ

ꢂ

ꢀ

‘

ꢀ

3$.  

72ꢁꢀꢀꢂ)3  

650 V  

0.14

Ω

 

24 A  

7$%

 

7$%

 

•

Extremely low gate charge  

•

Excellent output capacitance (C

oss

) profile  

•

100% avalanche tested  

ꢁ

ꢂ

ꢁ

ꢀ

ꢂ

ꢀ

,

ꢀ

3$.  

72ꢁꢀꢀꢂ  

•

Zener-protected  

Applications  

Figure 1. Internal schematic diagram  

•

Switching applications  

, TAB  

Description  

These devices are N-channel Power MOSFE

T

s  

developed using MDmesh™ M2 technology.  

Thanks to their strip layout and improved vertical  

structure, the devices exhibit low on-resistance  

and optimized switching characteristics, rendering  

them suitable for the most demanding high  

efficiency converters.  

AM15572v1  

Table 1. Device summary  

Order codes  

Marking  

Package  

Packaging  

STB33N65M2  

STF33N65M2  

STP33N65M2  

STI33N65M2  

D²PAK  

TO-220FP  

TO-220  

I²PAK  

T

a

pe and reel  

33N65M2  

Tube  

December 2014  

DocID027286 Rev 1  

1/23  

This is information on a product in full production.  

Contents  

STB33N65M2, STF33N65M2, STP33N65M2, STI33N65M2  

Contents  

2

PAK, STB33N65M2

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

10  

2

PAK, STI33N65M2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

17  

2/23  

DocID027286 Rev 1  

STB33N65M2, STF33N65M2, STP33N65M2, STI33N65M2  

Electrical ratings  

1

Electrical ratings  

Table 2. Absolute maximum ratings  

Value  

Symbol  

Parameter  

Unit  

D

2

PAK, TO-220,  

I

2

PAK  

TO-220FP  

V

GS  

I

D  

Gate-source voltage  

± 25  

V

Drain current (continuous) at T

C

= 25 °C  

Drain current (continuous) at T

C

= 100 °C  

Drain current (pulsed)  

24  

15  

24

(1)  

15

(1)  

A

A

I

D  

(2)  

I

DM  

96  

A

P

TOT  

V

ISO  

T

o

tal dissipation at T

C

= 25 °C  

190  

34  

W

Insulation withstand voltage (RMS) from all  

three leads to external heat sink  

(t=1 s; T

C

=25 °C)  

2500  

V

dv/dt

(3)  

dv/dt

(4)  

T

stg  

Peak diode recovery voltage slope  

MOSFET dv/dt ruggedness  

Storage temperature  

15  

50  

V/ns  

°C  

– 55 to 150  

150  

T

j  

Max. operating junction temperature  

1. Current

 

limited by package.  

2. Pulse

 

width limited by safe operating area.  

3.  

4.  

I

≤

24 A, di/dt

 

≤

400 A/µs; V  

≤

520 V  

< V  

, V

 

=400 V  

(BR)DSS DD  

SD  

DS peak  

V

DS  

Table 3. Thermal data  

Value  

Symbol  

Parameter  

Unit  

D

2

PAK TO-220FP TO-220 I

2

PAK  

R

thj-case  

Thermal resistance junction-case max  

Thermal resistance junction-pcb max  

0.66  

30  

3.68  

0.66  

°C/W  

°C/W  

(1)  

R

thj-pcb  

Thermal resistance junction-ambient  

max  

R

thj-amb  

62.5  

°C/W  

1. When

 

mounted on 1 inch² FR-4, 2 Oz copper board  

Table 4. Avalanche characteristics  

Symbol  

Parameter  

Value  

Unit  

Avalanche current, repetitive or not  

repetitive (pulse width limited by T

jmax  

I

AR  

2.5  

A

)

Single pulse avalanche energy  

(starting T

j

=25°C, I

D

= I

AR

; V

DD

=50 V)  

E

AS  

780  

mJ  

DocID027286 Rev 1  

3/23  

23  

Electrical characteristics  

STB33N65M2, STF33N65M2, STP33N65M2, STI33N65M2  

2

Electrical characteristics  

(T

C

= 25 °C unless otherwise specified)  

Table 5. On /off states  

Test conditions  

Symbol  

Parameter  

Drain-source  

Min.  

Typ.  

Max. Unit  

V

(BR)DSS  

V

GS

= 0, I

D

= 1 mA  

650  

V

breakdown voltage  

V

1

µA  

µA  

Zero gate voltage  

drain current  

I

DSS  

V

100  

T

C

=125 °C  

Gate-body leakage  

current  

I

GSS  

V

DS

= 0, V

GS

= ± 25 V  

10  

4

µA  

V

V

GS(th)  

R

DS(on)  

Gate threshold voltage

 

V

DS

= V

GS

, I

D

= 250 µA  

Static drain-source  

2

3

V

0.117  

0.14  

Ω

on-resistance  

Table 6. Dynamic  

Test conditions  

Symbol  

Parameter  

Min.  

Typ.  

Max. Unit  

C

iss  

Input capacitance  

Output capacitance  

–

–

1790  

75  

–

–

pF  

pF  

V

DS

= 100 V, f = 1 MHz,  

V

GS

= 0 V  

C

oss  

Reverse transfer  

capacitance  

C

rss  

–

–

–

2

380  

5

–

–

–

pF  

pF  

Ω

Equivalent output  

capacitance  

(1)  

C

oss eq  

V

GS

= 0

V

,

V

DS

= 0 to 520 V  

Intrinsic gate  

resistance  

R

G  

f = 1 MHz open drain  

Q

g  

Q

gs  

Q

gd  

T

o

tal gate charge  

Gate-source charge  

Gate-drain charge  

–

–

–

41.5  

6.8  

18  

–

–

–

nC  

nC  

nC  

V

DD

= 520 V, I

D

= 24 A,  

V

(see

)  

1.  

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%  

VDSS  

Table 7. Switching times  

Symbol  

Parameter  

Test conditions  

Min.  

Typ.  

Max. Unit  

t

d(on)  

t

r  

t

d(off)  

t

f  

Turn-on delay time  

Rise time  

–

–

–

–

13.5  

11.5  

72.5  

9

–

–

–

–

ns  

ns  

ns  

ns  

V

DD

= 325 V, I

D

= 12 A,  

R

G

= 4.7

Ω,

V

GS

= 10 V  

(see

and

)  

Turn-off delay time  

Fall time  

4/23  

DocID027286 Rev 1  

STB33N65M2, STF33N65M2, STP33N65M2, STI33N65M2  

Electrical characteristics  

Min. Typ. Max.

 

Unit  

Table 8. Source drain diode  

Symbol  

Parameter  

Test conditions  

I

SD  

Source-drain current  

–

–

–

–

–

–

–

–

–

24  

96  

A

A

(1)  

I

SDM  

Source-drain current (pulsed)  

Forward on voltage  

(2)  

V

SD  

V

GS

= 0 V, I

SD

= 24 A  

1.6  

V

t

rr  

Q

rr  

Reverse recovery time  

Reverse recovery charge  

Reverse recovery current  

Reverse recovery time  

Reverse recovery charge  

Reverse recovery current  

426  

7

ns  

µC  

A

I

V

DD

= 60 V (see

)  

I

RRM  

t

rr  

33.5  

544  

10  

ns  

µC  

A

I

Q

rr  

V

DD

= 60

V

, T

j

= 150 °C  

(see

)  

I

RRM  

36.5  

1. Pulse

 

width limited by safe operating area.  

2. Pulsed:

 

pulse duration = 300 µs, duty cycle 1.5%  

DocID027286 Rev 1  

5/23  

23  

Electrical characteristics  

STB33N65M2, STF33N65M2, STP33N65M2, STI33N65M2  

2.1  

Electrical characteristics (curves)  

Figure 2. Safe operating area for TO-220, D

2

PAK  

and I

2

PAK  

Figure 3. Thermal impedance for TO-220,  

D

2

PAK and I

2

PAK  

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įꢉ ꢉꢄꢆꢄꢀ

 

7

F

 ꢂꢅƒ&ꢉ

 

W

6LQJOHꢉSXOVH

 

6,1*/(ꢉ38/6(

 

ꢄꢆꢀ

 

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W

S

ꢇVꢈ

 

9

ꢄꢆꢀ

 

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Figure 4. Safe operating area for TO-220FP  

Figure 5. Thermal impedance for TO-220FP  

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ꢀ

=

 

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=

 

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Ϩ

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ꢄꢆꢀ

 

W

Sꢉ

 

Ϩ

6,1*/(ꢉ38/6(

 

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9

W

S

ꢇVꢈ

 

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Figure 6. Output characteristics  

Figure 7. Transfer characteristics  

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ꢅ

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*6

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6/23  

DocID027286 Rev 1  

STB33N65M2, STF33N65M2, STP33N65M2, STI33N65M2  

Electrical characteristics  

Figure 8. Gate charge vs gate-source voltage  

Figure 9. Static drain-source on-resistance  

9

*6

 

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ꢇ9ꢈ

 

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5

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ꢃ

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*6

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ꢁꢄ

 

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ꢀꢄ

 

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Figure 10. Capacitance variations  

Figure 11. Output capacitance stored energy  

(

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ꢃ

&

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LVV

 

ꢀꢄꢄꢄ

 

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ꢍ

RVV

 

ꢌ

ꢀꢄ

 

ꢀ

ꢂ

&

UVV

 

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9

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Figure 12. Normalized gate threshold voltage vs  

temperature  

Figure 13. Normalized on-resistance vs  

temperature  

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7

–

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–

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DocID027286 Rev 1  

7/23  

23  

Electrical characteristics  

STB33N65M2, STF33N65M2, STP33N65M2, STI33N65M2  

Figure 15. Normalized V

(BR)DSS

vs temperature  

Figure 14. Source-drain diode forward  

characteristics  

9

6′

 

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ꢂꢌ

 

8/23  

DocID027286 Rev 1  

STB33N65M2, STF33N65M2, STP33N65M2, STI33N65M2  

Test circuits  

3

Test circuits  

Figure 16. Switching times test circuit for  

resistive load  

Figure 17. Gate charge test circuit  

9

”

 

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ꢀꢂ9

 

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2200  

μ

F

 

3.3  

μ

F  

R

L  

V

DD  

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V

D  

R

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GS  

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9

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AM01468v1  

Figure 18. Test circuit for inductive load  

switching and diode recovery times  

Figure 19. Unclamped inductive load test circuit  

L

A

A

A

B

D

S

FAST  

DIODE  

L=100

μ

H  

V

D  

G

2200  

μ

F  

D.U.T.  

B

3.3  

μ

F  

V

DD  

3.3  

μ

F  

1000  

μ

F  

B

V

DD  

25  

Ω

I

D  

D

G

R

G  

S

V

i  

D.U.T.  

P

w  

AM01470v1  

AM01471v1  

Figure 20. Unclamped inductive waveform  

Figure 21. Switching time waveform  

W

RQ

 

W

GꢇRQꢈ

 

W

RII

 

W

GꢇRIIꢈ

 

9

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DocID027286 Rev 1  

9/23  

23  

Package mechanical data  

STB33N65M2, STF33N65M2, STP33N65M2, STI33N65M2  

4

Package mechanical data  

In order to meet environmental requirements, ST offers these devices in different grades of  

ECOPACK

®

packages, depending on their level of environmental compliance. ECOPACK

®  

specifications, grade definitions and product status are available at:

.  

ECOPACK

®

is an ST trademark.  

2

4.1  

D PAK,

 

STB33N65M2  

Figure 22. D²PAK (TO-263) drawing  

ꢄꢄꢏꢎꢌꢅꢏB9

 

10/23  

DocID027286 Rev 1  

STB33N65M2, STF33N65M2, STP33N65M2, STI33N65M2  

Package mechanical data  

Table 9. D²PAK (TO-263) mechanical data  

mm  

Dim.  

Min.  

Typ.  

Max.  

A

A1  

b

4.40  

0.03  

0.70  

1.14  

0.45  

1.23  

8.95  

7.50  

1.10  

10  

4.60  

0.23  

0.93  

1.70  

0.60  

1.36  

9.35  

8.00  

1.50  

10.40  

8.90  

7.25  

b2  

c

c2  

D

D1  

D2  

E

7.75  

1.30  

E1  

E2  

e

8.50  

6.85  

8.70  

7.05  

2.54  

e1  

H

4.88  

15  

5.28  

15.85  

2.69  

2.79  

1.40  

1.75  

J1  

L

2.49  

2.29  

1.27  

1.30  

L1  

L2  

R

0.4  

V2  

0°  

8°  

DocID027286 Rev 1  

11/23  

23  

Package mechanical data  

STB33N65M2, STF33N65M2, STP33N65M2, STI33N65M2  

Figure 23. D²PAK footprint (dimensions in mm)  

)RRWSULQW

 

12/23  

DocID027286 Rev 1  

STB33N65M2, STF33N65M2, STP33N65M2, STI33N65M2  

Package mechanical data  

4.2  

TO-220F

P

,

S

TF33N65M2  

Figure 24. TO-220FP drawing  

7012510_Rev_K_B  

DocID027286 Rev 1  

13/23  

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Package mechanical data  

STB33N65M2, STF33N65M2, STP33N65M2, STI33N65M2  

Table 10. TO-220FP mechanical data  

mm  

Dim.  

Min.  

Typ.  

Max.  

A

B

4.4  

2.5  

4.6  

2.7  

D

2.5  

2.75  

0.7  

E

0.45  

0.75  

1.15  

1.15  

4.95  

2.4  

F

1

F1  

F2  

G

1.70  

1.70  

5.2  

G1  

H

2.7  

10  

10.4  

L2  

L3  

L4  

L5  

L6  

L7  

Ø

16  

28.6  

9.8  

2.9  

15.9  

9

30.6  

10.6  

3.6  

16.4  

9.3  

3

3.2  

14/23  

DocID027286 Rev 1  

STB33N65M2, STF33N65M2, STP33N65M2, STI33N65M2  

Package mechanical data  

4.3  

TO-220, STP33N65M2  

Figure 25. TO-220 type A drawing  

ꢄꢄꢀꢅꢎꢃꢃBWSH$B5HYB7

 

DocID027286 Rev 1  

15/23  

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Package mechanical data  

STB33N65M2, STF33N65M2, STP33N65M2, STI33N65M2  

Table 11. TO-220 type A mechanical data  

mm  

Dim.  

Min.  

Typ.  

Max.  

A

b

4.40  

0.61  

1.14  

0.48  

15.25  

4.60  

0.88  

1.70  

0.70  

15.75  

b1  

c

D

D1  

E

1.27  

10  

10.40  

2.70  

5.15  

1.32  

6.60  

2.72  

14  

e

2.40  

4.95  

1.23  

6.20  

2.40  

13  

e1  

F

H1  

J1  

L

L1  

L20  

L30  

∅

P  

Q

3.50  

3.93  

16.40  

28.90  

3.75  

2.65  

3.85  

2.95  

16/23  

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STB33N65M2, STF33N65M2, STP33N65M2, STI33N65M2  

2

Package mechanical data  

4.4  

I PAK,

 

STI33N65M2  

Figure 26. I²PAK (TO-262) drawing  

0004982_Rev_H  

DocID027286 Rev 1  

17/23  

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Package mechanical data  

STB33N65M2, STF33N65M2, STP33N65M2, STI33N65M2  

Table 12. I²PAK (TO-262) mechanical data  

mm.  

DIM.  

min.  

typ  

max.  

A

A1  

b

4.40  

2.40  

0.61  

1.14  

0.49  

1.23  

8.95  

2.40  

4.95  

10  

4.60  

2.72  

0.88  

1.70  

0.70  

1.32  

9.35  

2.70  

5.15  

10.40  

14  

b1  

c

c2  

D

e

e1  

E

L

13  

L1  

L2  

3.50  

1.27  

3.93  

1.40  

18/23  

DocID027286 Rev 1  

STB33N65M2, STF33N65M2, STP33N65M2, STI33N65M2  

Packaging mechanical data  

5

Packaging mechanical data  

Figure 27. Tape for D²PAK (TO-263)  

10 pitches cumulative  

tolerance on tape +/- 0.2 mm  

P0  

D

Top cover  

tape  

P2  

T

E

F

W

K0  

B1  

B0  

For machine ref. only  

including draft and  

A0  

D1  

P1  

radii concentric around B0  

User direction of feed  

R

Bending radius  

User direction of feed  

AM08852v1  

DocID027286 Rev 1  

19/23  

23  

Packaging mechanical data  

STB33N65M2, STF33N65M2, STP33N65M2, STI33N65M2  

Figure 28. Reel for D²PAK (TO-263)  

10 pitches cumulative  

tolerance on tape +/- 0.2 mm  

P0  

Top cover  

tape  

P2  

D

T

E

F

W

K0  

B1  

B0  

For machine ref. only  

including draft and  

A0  

D1  

P1  

radii concentric around B0  

User direction of feed  

R

Bending radius  

User direction of feed  

AM08852v1  

20/23  

DocID027286 Rev 1  

STB33N65M2, STF33N65M2, STP33N65M2, STI33N65M2  

Packaging mechanical data  

Table 13. D²PAK (TO-263) tape and reel mechanical data  

Tape  

mm  

Reel  

mm  

Dim.  

Dim.  

Min.  

Max.  

Min.  

Max.  

A0  

B0  

D

10.5  

15.7  

1.5  

10.7  

15.9  

1.6  

A

B

C

D

G

N

T

330  

1.5  

12.8  

20.2  

24.4  

100  

13.2  

26.4  

30.4  

D1  

E

1.59  

1.65  

11.4  

4.8  

1.61  

1.85  

11.6  

5.0  

F

K0  

P0  

P1  

P2  

R

3.9  

4.1  

11.9  

1.9  

12.1  

2.1  

Base qty  

Bulk qty  

1000  

1000  

50  

T

0.25  

23.7  

0.35  

24.3  

W

DocID027286 Rev 1  

21/23  

23  

Revision history  

STB33N65M2, STF33N65M2, STP33N65M2, STI33N65M2  

6

Revision history  

Table 14. Document revision history  

Changes  

Date  

Revision  

10-Dec-2014  

1

First release.  

22/23  

DocID027286 Rev 1  

STB33N65M2, STF33N65M2, STP33N65M2, STI33N65M2  

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