STMicroelectronics-STI47N60DM6AG
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STI47N60DM6AG
Datasheet
Automotive-grade N-channel 600
V
,
7
0 mΩ typ., 36 A MDmesh™ DM6
Power MOSFET in an I²PAK package
Features
TAB
V
R
DS(on)
max.
I
D
Order code
DS
STI47N60DM6AG
600 V
80 mΩ
36 A
3
•
•
•
•
•
•
•
AEC-Q101 qualified
2
1
Fast-recovery body diode
Lower R
DS(on)
per area vs previous generation
I²PAK
Low gate charge, input capacitance and resistance
100% avalanche tested
D(2, TAB)
Extremely high dv/dt ruggedness
Zener-protected
G(1)
Applications
•
Switching applications
S(3)
AM01475V1
Description
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast-
recovery diode series. Compared with the previous MDmesh fast generation, DM6
combines very low recovery charge (Q
rr
), recovery time (t
rr
) and excellent
improvement in R
DS(on)
per area with one of the most effective switching behaviors
available in the market for the most demanding high-efficiency bridge topologies and
ZVS phase-shift converters.
Product status link
Product summary
Order code
Marking
STI47N60DM6AG
47N60DM6
I²PAK
Package
Packing
Tube
DS12101
–
Rev 3
–
March 2019
For further information contact your local STMicroelectronics sales office.
STI47N60DM6AG
Electrical ratings
1
Electrical ratings
Table 1.
Absolute maximum ratings
Parameter
Symbol
Value
±25
36
Unit
V
V
Gate-source voltage
GS
I
Drain current (continuous) at T
= 25 °C
A
D
D
C
I
Drain current (continuous) at T
= 100 °C
23
A
C
I
Drain current (pulsed)
137
250
50
A
D
P
T
o
tal power dissipation at T
= 25 °C
W
TOT
C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
V/ns
°C
100
T
Operating junction temperature range
Storage temperature range
J
-55 to 150
T
stg
1. Pulse
width limited by safe operating area
2.
3.
I
≤ 36 A, di/dt ≤ 800 A/μs, V
< V
, V
= 480 V
(BR)DSS DD
SD
DS(peak)
V
≤ 480 V
DS
Table 2.
Thermal data
Parameter
Symbol
Value
0.5
Unit
R
thj-case
Thermal resistance junction-case
Thermal resistance junction-amb
°C/W
R
thj-amb
62.5
Table 3.
Avalanche characteristics
Symbol
Parameter
Value
Unit
Avalanche current, repetitive or not repetitive
I
7
A
AR
(pulse width limited by T
)
jmax
Single pulse avalanche energy
(starting T = 25°C, I
= I
, V
= 100 V)
E
700
mJ
AS
j
D
AR
DD
DS12101
–
Rev 3
page 2/13
STI47N60DM6AG
Electrical characteristics
2
Electrical characteristics
T
C
= 25 °C unless otherwise specified
Table 4.
On/off state
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
V
V
V
V
T
= 0
V
, I
= 1
m
A
Drain-source breakdown voltage
600
(BR)DSS
GS
GS
GS
D
= 0
V
, V
=
6
00 V
1
µA
DS
I
= 0
V
, V
= 600 V,
Zero gate voltage drain current
DSS
DS
100
µA
C
I
V
V
V
= 0
V
, V
=
±
25 V
Gate body leakage current
Gate threshold voltage
±1
4.75
80
µA
V
GSS
DS
GS
V
= V
, I
= 250 µA
3.25
4
GS(th)
DS(on)
DS
GS
GS
D
R
= 10
V
, I
=
1
8 A
D
Static drain-source on-resistance
70
mΩ
1. Defined
by design, not subject to production test.
Table 5.
Dynamic
Symbol
Parameter
Input capacitance
Test conditions
Min.
Typ.
2350
160
2
Max.
Unit
pF
pF
pF
pF
Ω
C
iss
–
–
–
–
–
–
–
–
–
–
–
–
–
–
C
oss
V
V
= 100 V, f = 1 MHz, V
= 0 V
Output capacitance
DS
GS
C
Reverse transfer capacitance
Equivalent output capacitance
Intrinsic gate resistance
T
o
tal gate charge
rss
= 0 to 480
V
, V
= 0 V
C
oss eq.
416
1.6
55
DS
GS
R
f = 1 MHz open drain
G
Q
V
V
= 480
V
, I
=
3
6 A,
nC
nC
g
DD
GS
D
= 0 to 10 V
Q
Gate-source charge
12
gs
Q
Gate-drain charge
–
31
–
nC
gd
1.
C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
when V
increases from 0
oss DS
to 80% V
.
DSS
Table 6.
Switching times
Test conditions
Symbol
Parameter
Turn-on delay time
Min.
Typ.
23
Max.
Unit
ns
t
V
= 300
V
, I
=
1
8 A,
–
–
–
–
–
–
d(on)
DD
D
R
G
= 4.7 Ω, V
= 10 V
t
GS
Rise time
5.5
57
ns
r
t
Turn-off delay time
ns
d(off)
t
Fall time
–
9
–
ns
f
DS12101
–
Rev 3
page 3/13
STI47N60DM6AG
Electrical characteristics
Table 7.
Source-drain diode
Test conditions
Symbol
Parameter
Source-drain current
Min.
Typ.
Max.
36
Unit
A
I
–
–
–
–
–
SD
I
Source-drain current (pulsed)
Forward on voltage
137
1.6
A
SDM
V
I
I
= 36 A, V
= 0 V
V
SD
GS
SD
t
= 36 A, di/dt = 100 A/µs,
= 60 V
Reverse recovery time
Reverse recovery charge
115
ns
µC
rr
SD
V
DD
Q
rr
0.54
I
Reverse recovery current
–
9.5
A
RRM
t
I
= 36 A, di/dt = 100 A/µs,
= 60 V, T = 150 °C
Reverse recovery time
–
–
210
2.1
ns
rr
SD
V
Q
DD
j
Reverse recovery charge
µC
rr
I
Reverse recovery current
–
20.4
A
RRM
1. Pulse
width limited by safe operating area
2. Pulsed:
pulse duration = 300 µs, duty cycle 1.5%
Table 8.
Gate-source Zener diode
Test conditions
Symbol
Parameter
Min.
Typ.
Max.
Unit
V
I =
±1 mA, I
= 0 A
GS D
Gate-source breakdown voltage
±30
–
–
V
(BR)GSO
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device.
The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for
additional external componentry.
DS12101
–
Rev 3
page 4/13
STI47N60DM6AG
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area
Figure 2.
Thermal impedance
GADG200220171036SOA
I
D
(A)
is
this area
Operation in
limited by R
DS(on)
10
2
10
1
10
0
t
p
=10 µs
t
p
=100 µs
T
j
≤
150 °C
T
c
= 25°C
single pulse
t
p
=1 ms
10
-1
10
-2
t
p
=10 ms
10
-1
10
0
10
1
10
2
V
DS
(V)
Figure 3.
Output characteristics
Figure 4.
Transfer characteristics
GADG170220171018OCH
GADG170220171019TCH
I
D
I
D
(A)
(A)
V
GS
= 10 V
V
GS
= 9 V
120
100
80
120
100
80
V
DS
= 20 V
V
GS
= 8 V
V
GS
= 7 V
60
60
40
40
V
GS
= 6 V
20
0
20
0
0
4
8
12
16
V
DS
(V)
4
5
6
7
8
9
V
GS
(V)
Figure 5.
Gate charge vs gate-source voltage
Figure 6.
Static drain-source on-resistance
GADG170220171019QVG
GADG170220171016RID
V
DS
(V)
V
GS
(V)
R
DS(on)
(mΩ)
V
DD
= 480 V
I
D
= 36 A
600
500
400
300
200
12
10
8
76
V
GS
= 10 V
74
72
70
68
V
DS
6
4
100
0
2
66
64
0
0
10
20
30
40
50
60
Q
g
(nC)
0
6
12
18
24
30
36
I
D
(A)
DS12101
–
Rev 3
page 5/13
STI47N60DM6AG
Electrical characteristics (curves)
Figure 7.
Capacitance variations
Figure 8.
Normalized gate threshold voltage vs
temperature
GADG170220171018CVR
C
(pF)
GADG191220180856VTH
V
GS(th)
(norm.)
10
4
10
3
10
2
1.1
C
ISS
1.0
0.9
0.8
I
D
= 250 µA
C
OSS
f = 1 MHz
10
1
10
0
C
RSS
0.7
0.6
-75
-25
25
75
125
T
j
(°C)
10
-1
10
0
10
1
10
2
V
DS
(V)
Figure 10.
Normalized V
(BR)DSS
vs temperature
Figure 9.
Normalized on-resistance vs temperature
GADG191220180856RON
R
DS(on)
(norm.)
GADG191220180856BDV
V
(BR)DSS
(norm.)
2.5
1.10
1.05
1.00
0.95
2.0
I
D
= 1 mA
V
GS
= 10 V
1.5
1.0
0.5
0
0.90
0.85
-75
-25
25
75
125
T
j
(°C)
-75
-25
25
75
125
T
j
(°C)
Figure 11.
Source-drain diode forward characteristics
Figure 12.
Output capacitance stored energy
GADG170220171018SDF
V
SD
(V)
GIPD280120191305EOS
E
OSS
(µJ)
18
15
12
9
1.2
1
T
J
= -50 °C
T
J
= 25 °C
T
J
= 150 °C
0.8
0.6
6
0.4
0.2
3
0
0
6
12
18
24
30
36
I
SD
(A)
0
100 200 300 400 500 600
V
DS
(V)
DS12101
–
Rev 3
page 6/13
STI47N60DM6AG
Test circuits
3
Test circuits
Figure 13.
Test circuit for resistive load switching times
Figure 14.
Test circuit for gate charge behavior
V
DD
12 V
47 kΩ
1 kΩ
100 nF
R
L
2200
μF
3.3
μF
V
DD
+
I
G
= CONST
2.7 kΩ
V
D
R
G
D.U.
T
.
100 Ω
V
GS
pulse width
+
D.U.
T
.
V
GS
V
G
2200
μF
pulse width
47 kΩ
1 kΩ
AM01469v1
AM01468v1
Figure 15.
Test circuit for inductive load switching and
diode recovery times
Figure 16.
Unclamped inductive load test circuit
L
A
A
A
D
S
V
D
100 µH
D
fast
G
D.U.
T
.
B
diode
2200
3.3
µF
+
V
DD
1000
µF
B
µF
3.3
µF
B
+
V
DD
I
D
25 Ω
G
D.U.
T
.
R
G
S
+
_
D.U.
T
.
V
i
pulse width
AM01471v1
AM01470v1
Figure 18.
Switching time waveform
Figure 17.
Unclamped inductive waveform
t
on
t
d(on)
t
off
t
d(off)
V
(BR)DSS
t
r
t
f
V
D
90%
90%
I
DM
V
DS
10%
V
GS
10%
0
0
I
D
V
DD
V
DD
90%
10%
AM01472v1
AM01473v1
DS12101
–
Rev 3
page 7/13
STI47N60DM6AG
Package information
4
Package information
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions
DS12101
–
Rev 3
page 8/13
STI47N60DM6AG
I²PAK package information
4.1
I²PAK package information
Figure 19.
I²PAK package outline
0004982_Rev_H
DS12101
–
Rev 3
page 9/13
STI47N60DM6AG
I²PAK package information
Table 9.
I²PAK package mechanical data
mm
Dim.
Min.
4.40
2.40
0.61
1.14
0.49
1.23
8.95
2.40
4.95
10
Typ.
Max.
4.60
2.72
0.88
1.70
0.70
1.32
9.35
2.70
5.15
10.40
14
A
A1
b
–
–
–
–
–
–
–
–
–
–
–
–
–
b1
c
c2
D
e
e1
E
L
13
L1
L2
3.50
1.27
3.93
1.40
DS12101
–
Rev 3
page 10/13
STI47N60DM6AG
Revision history
Table 10.
Document revision history
Changes
Date
Revision
12-Apr-2017
1
2
Initial release.
15-Mar-2018
Removed maturity status indication from cover page. The document status is production data.
Minor text changes.
11-Mar-2019
3
DS12101
–
Rev 3
page 11/13
STI47N60DM6AG
Contents
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
2
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
3
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
7
Package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
8
I²PAK package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Contents
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12
DS12101
–
Rev 3
page 12/13
STI47N60DM6AG
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DS12101
–
Rev 3
page 13/13
