STMicroelectronics-STL21N65M5
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STL21N65M5
N-channel 650
V
,
0
.175
Ω
, 17 A ultra low gate charge MDmesh™ V
Power MOSFET in PowerFL
A
T
™ 8×8 HV package
Datasheet — production data
Features
V
DSS
T
Jmax
@
R
DS(on)
max
Order code
I
D
“OTTOM VIEW
3ꢀꢁꢂ
3ꢀꢁꢂ
3ꢀꢁꢂ
< 0.190
Ω
17 A
(1)
‘ꢀꢃꢂ
STL21N65M5
710 V
$ꢀꢄꢂ
1. The
value is rated according to R
thj-case
■
100% avalanche tested
■
Low input capacitance and gate charge
■
Low gate input resistance
0OWER&,
!
4
ꢅXꢅ (6
Applications
■
Switching applications
Figure 1.
Internal schematic diagram
Description
This device is an N-channel MDmesh™ V Power
MOSFET based on an innovative proprietary
vertical process technology, which
is combined
with STMicroelectronics’ well-known
$ꢀꢄꢂ
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficienc
y
.
‘ꢀꢃꢂ
3ꢀꢁꢂ
!-ꢆꢃꢇꢈꢉVꢃ
Table 1.
Order code
STL21N65M5
Device summary
Marking
Package
Packaging
T
a
pe and reel
21N65M5
PowerFL
A
T
™ 8×8 HV
May 2012
Doc ID 17438 Rev 5
1/16
This is information on a product in full production.
16
Contents
STL21N65M5
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/16
Doc ID 17438 Rev 5
STL21N65M5
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
V
DS
V
GS
Drain-source voltage
650
25
V
V
Gate-source voltage
(1)
I
D
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
17
A
(1)
I
D
11
A
(1),(2)
I
DM
68
A
(3)
I
D
Drain current (continuous) at
T
amb
= 25 °C
Drain current (continuous) at
T
amb
= 100 °C
Drain current (pulsed)
2.7
1.7
10.8
3
A
(3)
I
D
A
(2),(3)
I
DM
A
(3)
P
TOT
T
o
tal dissipation at
T
amb
= 25 °C
T
o
tal dissipation at T
C
= 25 °C
W
W
(1)
P
TOT
125
Avalanche current, repetitive or not-
repetitive (pulse width limited by T
j
max)
I
AR
5
A
Single pulse avalanche energy
E
AS
400
mJ
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
dv/dt
(4)
Peak diode recovery voltage slope
15
– 55 to 150
150
V/ns
°C
T
stg
T
j
Storage temperature
Max. operating junction temperature
°C
1. The
value is rated according to R
thj-case.
2. Pulse
width limited by safe operating area.
3. When
mounted on FR-4 board of inch², 2oz Cu.
4.
I
≤
17 A, di/dt
≤
400 A/µs, V
< V
, V
= 400 V.
SD
Peak
(BR)DSS DD
T
a
ble 3.
Symbol
Thermal data
Parameter
Value
Unit
R
thj-case
Thermal resistance junction-case max
1
°C/W
°C/W
(1)
R
thj-amb
Thermal resistance junction-amb max
45
1. When
mounted on 1inch² FR-4 board, 2 oz Cu.
Doc ID 17438 Rev 5
3/16
Electrical characteristics
STL21N65M5
2
Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
T
a
ble 4.
Symbol
On /off states
Parameter
Test conditions
I
D
= 1 mA, V
GS
= 0
V
DS
= 650 V
Min.
Typ.
Max. Unit
Drain-source
breakdown voltage
V
(BR)DSS
650
V
Zero gate voltage
1
µA
µA
I
DSS
drain current (V
GS
= 0)
V
DS
= 650
V
,
T
C
=125 °C
100
Gate-body leakage
I
GSS
V
GS
=
25 V
100 nA
current (V
DS
= 0)
V
GS(th)
R
DS(on)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250 µA
Static drain-source
3
4
5
V
V
GS
= 10
V
,
I
D
= 8.5 A
0.175 0.190
Ω
on-resistance
T
a
ble 5.
Symbol
Dynamic
Parameter
Test conditions
Min.
Typ.
Max. Unit
Input capacitance
Output capacitance
C
iss
C
oss
C
rss
1950
46
pF
V
DS
= 100
V
, f = 1
M
Hz,
GS
= 0
–
–
–
pF
pF
V
Reverse transfer
capacitance
3
Equivalent
capacitance time
related
(1)
C
o(tr)
–
133
pF
V
DS
= 0 to 520
V
,
V
GS
= 0
f = 1 MHz open drain
Equivalent
capacitance energy
related
(2)
C
o(er)
–
–
44
–
–
pF
Intrinsic gate
resistance
R
G
2.5
Ω
Q
g
Q
gs
Q
gd
T
o
tal gate charge
Gate-source charge
Gate-drain charge
V
DD
= 520
V
,
I
D
= 8.5 A,
V
GS
= 10 V
44
12
17
nC
nC
nC
–
–
1.
2.
C
time related is defined as a constant equivalent capacitance giving the same charging time as C
oss eq.
oss
when V
increases from 0 to 80% V
DS
DSS
C
C
energy related is defined as a constant equivalent capacitance giving the same stored energy as
oss eq.
oss
when V
increases from 0 to 80% V
DSS
DS
4/16
Doc ID 17438 Rev 5
STL21N65M5
Electrical characteristics
T
a
ble 6.
Switching times
Parameter
Symbol
Test conditions
Min. Typ.
Max Unit
t
d(off)
T
u
rn-off delay time
Rise time
37
ns
V
DD
= 400
V
,
I
D
= 11 A,
t
r
t
c
t
f
10
ns
R
G
= 4.7
Ω
,
V
GS
= 10 V
–
–
Cross time
Fall time
24
ns
12
ns
T
a
ble 7.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max.
Unit
I
SD
Source-drain current
17
68
A
A
–
–
(1)
I
SDM
Source-drain current (pulsed)
(2)
V
SD
Forward on voltage
I
SD
= 17 A, V
GS
= 0
1.5
V
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
294
4
ns
µC
A
I
SD
= 17 A, di/dt = 100 A/µs
Q
rr
–
–
I
RRM
28
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 17 A, di/dt = 100 A/µs
DD
= 100
V
,
T
j
= 150 °C
340
5
ns
µC
A
Q
rr
V
I
RRM
29
1. Pulse
width limited by safe operating area
2. Pulsed:
pulse duration = 300 µs, duty cycle 1.5%
Doc ID 17438 Rev 5
5/16
Electrical characteristics
STL21N65M5
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Thermal impedance
AM0706
8
v2
Zth PowerFL
A
T
8
x
8
HV
I
D
(A)
K
δ
=0.5
0.2
0.1
10
10
µs
10
-1
0.05
100
µs
0.02
1
0.01
1m
s
S
ingle p
u
l
s
e
Tj=150°C
Tc=25°C
S
ingle p
u
l
s
e
10m
s
10
-2
10
-5
0.1
10
-2
t
10
-4
10
–
3
10
V
D
S
(V)
p
(
s
)
0.1
1
100
Figure 4.
Output characteristics
Figure 5.
Transfer characteristics
AM0549
3
v1
AM05494v1
I
D
(A)
I
D
(A)
V
D
S
=15V
V
G
S
=10V
3
5
3
5
3
0
3
0
7V
25
25
20
15
10
20
15
10
5
6V
5V
5
0
0
0
5
2
20 25
3
0
V
D
S
(V)
8
10 V
G
S
(V)
10
15
0
4
6
Figure 6.
Gate charge vs gate-source voltage
Figure 7.
Static drain-source on-resistance
AM05496v1
AM05495v1
V
G
S
V
D
S
R
D
S
(on)
(
Ω
)
(V)
(V)
V
G
S
= 10 V
V
DD
=520V
Q
g
12
10
8
0.1
8
500
I
D
=
8
.5A
V
D
S
0.16
0.14
400
3
00
6
0.12
200
100
4
2
0.10
0
0
0.0
8
8
14
2
4
6
10
12
16
I
D
(A)
0
0
3
0
40
10
20
50
Q
g
(nC)
6/16
Doc ID 17438 Rev 5
STL21N65M5
Electrical characteristics
Figure 8.
Output capacitance stored energy
Figure 9.
Capacitance variations
AM0549
8
v1
AM05497v1
C
(pF)
o
ss
(
µ
J)
E
9
8
10000
1000
7
6
Ci
ss
5
4
3
2
100
10
1
Co
ss
Cr
ss
1
0
0
200
400 500
0.1
100
100
3
00
600
V
D
S
(V)
1
10
V
D
S
(V)
Figure 10.
Normalized gate threshold voltage
Figure 11.
Normalized on-resistance vs
vs temperature
temperature
AM05500v1
AM05501v1
V
G
S
(th)
R
D
S
(on)
(norm)
(norm)
2.1
1.10
I
D
=250
µ
A
I
D
=
8
.5 A
1.9
1.7
V
G
S
= 10 V
1.00
0.90
1.5
1.
3
1.1
0.9
0.
8
0
0.7
0.5
-50
-25
0.70
-50
-25
0
25 50 75
125
T
J
(°C)
0
25 50 75
T
J
(°C)
125
100
100
Figure 12.
Source-drain diode forward
characteristics
Figure 13.
Normalized V
DS
vs temperature
AM05502v1
AM10
3
99v1
V
(V)
S
D
V
D
S
(norm)
T
J
=-50°C
1.0
8
1.0
I
D
= 1mA
1.06
1.04
1.02
1.00
0.9
0.
8
T
J
=25°C
0.7
0.6
T
J
=150°C
0.9
8
0.96
0.5
0.4
0.94
0.92
0
-50
-25
10
20
3
0
40
50 I
S
D
(A)
0
25 50 75
T
J
(°C)
100
Doc ID 17438 Rev 5
7/16
Electrical characteristics
STL21N65M5
Figure 14.
Switching losses vs gate resistance
(1)
AM05541v1
E
(
μ
J)
Eon
I
D
=11A
V
DD
=400V
V
G
S
=10V
160
140
120
Eoff
100
8
0
60
40
20
0
20
3
0
40
10
R
G
(
Ω
)
0
1. Eon
including reverse recovery of a SiC diode
8/16
Doc ID 17438 Rev 5
STL21N65M5
Test circuits
3
Test circuits
Figure 15.
Switching times test circuit for
resistive load
Figure 16.
Gate charge test circuit
V
DD
12V
47k
Ω
1k
Ω
100nF
2200
3
.
3
μ
F
R
L
μ
F
I
G
=CON
S
T
V
DD
100
Ω
V
i
=20V=V
GMAX
D.U.
T
.
V
G
V
D
R
G
V
G
S
2200
μ
F
D.U.
T
.
2.7k
Ω
47k
Ω
P
W
1k
Ω
P
W
AM0146
8
v1
AM01469v1
Figure 17.
Test circuit for inductive load
switching and diode recovery times
Figure 18.
Unclamped inductive load test
circuit
L
A
A
A
B
D
FA
S
T
DIODE
L=100
μ
H
V
D
G
2200
μ
F
D.U.
T
.
B
3
.
3
μ
F
V
DD
S
3
.
3
μ
F
1000
μ
F
B
V
DD
25
Ω
I
D
D
G
R
G
S
V
i
D.U.
T
.
P
w
AM01470v1
AM01471v1
Figure 19.
Unclamped inductive waveform
Figure 20.
Switching time waveform
Concept w
a
veform for Ind
u
ctive Lo
a
d
T
u
rn-off
V
(BR)D
SS
Id
V
D
90
%
Vd
s
90
%
Id
Tdel
a
y-off
I
DM
Vg
s
90
%
Vg
s
10
%
Vd
s
on
I
D
Vg
s
(I(t))
V
DD
V
DD
10
%
Id
Vd
s
Tri
s
e
Tf
a
ll
Tcro
ss
-over
AM01472v1
AM05540v2
Doc ID 17438 Rev 5
9/16
Package mechanical data
STL21N65M5
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECO
P
A
CK
®
packages, depending on their level of environmental compliance. ECO
P
ACK
®
is an ST trademark.
Table 8.
PowerFLAT™ 8×8 HV mechanical data
mm
Dim.
Min.
Typ.
Max.
A
A1
b
0.80
0.00
0.95
0.90
0.02
1.00
8.00
8.00
7.20
4.30
2.00
0.50
0.10
0.10
0.10
1.00
0.05
1.05
D
E
D2
E2
e
7.05
4.15
7.30
4.40
L
0.40
0.60
aaa
bbb
ccc
10/16
Doc ID 17438 Rev 5
STL21N65M5
Package mechanical data
Figure 21.
PowerFLAT™ 8×8 HV drawing mechanical data
BOTTOM VIEW
b
bbb C
A B
PIN#1 ID
D2
SIDE VIEW
ccc C
C
SEATING
PLANE
0.08 C
D
A
B
INDEX AREA
aaa C
TOP VIEW
aaa C
8
222
8
71_Rev_B
Doc ID 17438 Rev 5
11/16
Package mechanical data
STL21N65M5
Figure 22.
PowerFLAT™ 8×8 HV recommended footprint
7.30
1.05
2.00
Footprint
12/16
Doc ID 17438 Rev 5
STL21N65M5
Packaging mechanical data
5
Packaging mechanical data
Figure 23.
PowerFLAT™ 8×8 HV tape
P0 (4.0
0.1)
P2 (2.0
0.1)
D0 ( 1.55
0.05)
T (0.
3
0 0.05)
E
(1.75 0.1)
D1 ( 1.5 Min)
P1 (12.00
0.1)
A0 (
8
.
3
0 0.1)
K0 (1.10
0.1)
Note: B
as
e
a
nd B
u
lk
qua
ntity
3
000 pc
s
8
229
8
19_
T
a
pe_revA
Figure 24.
PowerFLAT™ 8×8 HV package orientation in carrier tape
Doc ID 17438 Rev 5
13/16
Packaging mechanical data
Figure 25.
PowerFLAT™ 8×8 HV reel
STL21N65M5
8
229
8
19_Reel_revA
14/16
Doc ID 17438 Rev 5
STL21N65M5
Revision history
6
Revision history
Table 9.
Date
Document revision history
Revision
Changes
28-Apr-2010
14-Jun-2010
1
2
First release.
R
DS(on)
typical value has been corrected.
Figure 7: Static drain-source on-resistance
have been updated.
14-Mar-2011
18-May-2011
3
4
Section 4: Package mechanical data
has been updated.
Minor text changes.
29-May-2011
5
Doc ID 17438 Rev 5
15/16
STL21N65M5
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Doc ID 17438 Rev 5
