STMicroelectronics-STL225N6F7AG

Part #STMicroelectronics-STL225N6F7AG
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STMicroelectronics-STL225N6F7AG
STL225N6F7AG  
Automotive-grade N-
channel 60 V, 1.2 mΩ typ., 120 A  
STripFET™ F7 Power MOSFET in a PowerFLAT™ 5×6 package  
Datasheet – production data  
Features  
Order code  
V
R

DS(on)

max  
I

D  

DS  
STL225N6F7AG  
60 V  
1.4 mΩ  
120 A  
AEC-Q101 qualified  
Among the lowest R

DS(on)

on the market  
Excellent FoM (figure of merit)  
Low C

rss

/C

iss

ratio for EMI immunity  
High avalanche ruggedness  
Wettable flank package  
Applications  
DC-DC converter for H.E.V.  
(hybrid electric vehicle)  
Figure 1: Internal schematic diagram  
Description  
This N-channel Power MOSFET utilizes  
STripFET™ F7 technology with an enhanced  
trench gate structure that results in very low on-  
state resistance, while also reducing internal  
capacitance and gate charge for faster and more  
efficient switching.  
Table 1: Device summary  
Order code  
Marking  
225N6F7  
Package  
Packaging  
STL225N6F7AG  
PowerFLAT

TM

5×6  
Tape and reel  
March 2017  
DocID028557 Rev 3  
1/15  
This is information on a product in full production.  

STL225N6F7AG  
Electrical ratings  
1
Electrical ratings  
Table 2: Absolute maximum ratings  
Symbol  
V

DS  

Parameter  
Value  
60  
Unit  
V
Drain-source voltage  
V

GS  

Gate-source voltage  
±20  
120  
120  
480  
188  
V
Drain current (continuous) at T

C

= 25 °C  
Drain current (continuous) at T

C

= 100 °C  
Drain current (pulsed)  
A
A
A
P

TOT  

T

j  

Total dissipation at T

C

= 25 °C  
Operating junction temperature range  
Storage temperature range  
W
-55 to 175  
°C  
T

stg  

Notes:  

(1)

This value is limited by package.  

(2)

Pulse width limited by safe operating area  
Table 3: Thermal data  
Parameter  
Symbol  
Value  
31.3  
0.8  
Unit  
R

thj-p

Thermal resistance junction-pcb  
Thermal resistance junction-case  
°C/W  
°C/W  
R

thj-case  

Notes:  

(1)

When mounted on FR-4 board of 1 inch², 2oz Cu, t < 10 s.  
DocID028557 Rev 3  
3/15  
 
 
 

Electrical characteristics  
STL225N6F7AG  
2
Electrical characteristics  
(T

C

= 25 °C unless otherwise specified)  
Table 4: On /off states  
Symbol  
Parameter  
Test conditions  
Min. Typ. Max. Unit  
Drain-source breakdown  
voltage  
V

(BR)DSS  

I

D

= 1 mA, V

GS

= 0 V  
60  
V
Zero gate voltage  
drain current  
V

GS

= 0 V  
I

DSS  

1
µA  
V

DS

= 60 V  
Gate-body leakage  
current  
I

GSS  

V

GS

= 20 V, V

DS

= 0 V  
V

DS

= V

GS

, I

D

= 250 μA  
V

GS

= 10 V, I

D

= 60 A  
100  
4
nA  
V
V

GS(th)  

R

DS(on)  

Gate threshold voltage  
2
Static drain-source  
on-resistance  
1.2  
1.4  
mΩ  
Table 5: Dynamic  
Test conditions  
Symbol  
C

iss  

Parameter  
Input capacitance  
Output capacitance  
Min. Typ. Max. Unit  
–
–
6500  
3200  
–
–
pF  
pF  
V

DS

= 25 V, f = 1 MHz,  
V

GS

= 0 V  
C

oss  

Reverse transfer  
capacitance  
C

rss  

–
230  
–
pF  
Q

g  

Total gate charge  
V

DD

= 30 V, I

D

= 120 A,  
V

GS

= 0 to 10 V  
–
–
98  
38  
–
–
nC  
nC  
Q

gs  

Gate-source charge  
Q

gd  

Gate-drain charge  
–
28  
–
nC  
Table 6: Switching times  
Test conditions  
Symbol  
t

d(on)  

t

r  

Parameter  
Turn-on delay time  
Rise time  
Min. Typ. Max. Unit  
V

DD

= 30 V, I

D

= 60 A,  
–
–
–
41  
45  
68  
–
–
–
ns  
ns  
ns  
R

G

= 4.7 Ω, V

GS

= 10 V  
t

d(off)  

Turn-off delay time  
t

f  

Fall time  
–
35  
–
ns  
4/15  
DocID028557 Rev 3  
 
 
 

STL225N6F7AG  
Symbol  
Electrical characteristics  
Min. Typ. Max. Unit  
Table 7: Source-drain diode  
Test conditions  
Parameter  
t

rr  

Forward on voltage  
Reverse recovery time  
I

SD

= 60 A, V

GS

= 0 V  
–
–
1.2  
V
69  
ns  
I

D

= 60 A, di/dt = 100 A/µs  
V

DD

= 48 V  
Reverse recovery  
charge  
Q

rr  

–
–
103  
nC  
A
Reverse recovery  
current  
I

RRM  

3
Notes:  

(1)

Pulsed: pulse duration = 300 µs, duty cycle 1.5%  
DocID028557 Rev 3  
5/15  
 

Electrical characteristics  
STL225N6F7AG  
2.1  
Electrical characteristics (curves)  
Figure 2: Safe operating area  
Figure 3: Thermal impedance  
Figure 4: Output characteristics  
Figure 5: Transfer characteristics  
Figure 6: Static drain-source on-resistance  
Figure 7: Gate charge vs gate-source voltage  
6/15  
DocID028557 Rev 3  
 

STL225N6F7AG  
Figure 8: Capacitance variations  
Electrical characteristics  
Figure 9: Normalized gate threshold voltage vs  
temperature  
Figure 10: Normalized on-resistance vs temperature  
Figure 11: Source-drain diode forward  
characteristics  
Figure 12: Normalized V

(BR)DSS

vs temperature  
DocID028557 Rev 3  
7/15  

Test circuits  
STL225N6F7AG  
3
Test circuits  
Figure 13: Test circuit for resistive load  
switching times  
Figure 14: Test circuit for gate charge  
behavior  
Figure 15: Test circuit for inductive load  
switching and diode recovery times  
Figure 16: Unclamped inductive load test  
circuit  
Figure 17: Unclamped inductive waveform  
Figure 18: Switching time waveform  
8/15  
DocID028557 Rev 3  

STL225N6F7AG  
Package mechanical
data  
4
Package mechanical data  
In order to meet environmental requirements, ST offers these devices in different grades of  
ECOPACK

®

packages, depending on their level of environmental compliance. ECOPACK

®  

specifications, grade definitions and product status are available at:

.  
ECOPACK

®

is an ST trademark.  
4.1  
PowerFLAT 5×6 package mechanical data  
Figure 19
: PowerFLAT™ 5×6 WF type C package outline  
8231817_WF_typeC_r14  
DocID028557 Rev 3  
9/15  

Package mechanical
data  
STL225N6F7AG  
Table 8: PowerFLAT™ 5×6 WF type C mechanical data  
mm  
Dim.  
Min.  
0.80  
0.02  
Typ.  
Max.  
1.00  
0.05  
A
A1  
A2  
b
0.25  
0.30  
5.80  
5.00  
4.15  
4.05  
4.80  
0.25  
0.15  
0.50  
6.10  
5.40  
4.45  
4.35  
5.10  
0.55  
0.45  
C
6.00  
5.20  
D
D2  
D3  
D4  
D5  
D6  
e
4.20  
5.00  
0.40  
0.30  
1.27  
6.40  
E
6.20  
3.50  
2.35  
0.40  
0.08  
0.20  
0.85  
4.00  
3.55  
1.05  
0.90  
0.175  
0°  
6.60  
3.70  
2.55  
0.60  
0.28  
0.45  
1.15  
4.40  
3.85  
1.35  
1.10  
0.375  
12°  
E2  
E3  
E4  
E5  
E6  
E7  
E9  
E10  
K
0.325  
1.00  
4.20  
3.70  
L
1.00  
L1  
θ
0.275  
10/15  
DocID028557 Rev 3  

STL225N6F7AG  
Package mechanical
data  
Figure 20
: PowerFLAT™ 5×6 recommended footprint (dimensions are in mm)  
8231817_FOOTPRINT_rev14  
DocID028557 Rev 3  
11/15  

Package mechanical
data  
STL225N6F7AG  
4.2  
Packing information  
Figure 21
: PowerFLAT™ 5×6 WF tape (dimensions are in mm)  
Figure 22
: PowerFLAT™ 5×6 package orientation in carrier t
ape  
12/15  
DocID028557 Rev 3  

STL225N6F7AG  
Package mechanical
data  
Figure 23
: PowerFLAT™ 5×6 reel (dimensions are in mm)  
DocID028557 Rev 3  
13/15  

Revision history  
STL225N6F7AG  
5
Revision history  
Table 9: Document revision history  
Changes  
Date  
Revision  
23-Oct-2015  
1
First release.  
Updated title and features in cover page.  
Updated Table 2: “Absolute maximum ratings”, Table 5: “Dynamic”,  
Table 6: “Switching times” and Table 7: “Source-drain diode”  
Minor text changes.  
09-Jun-2016  
17-Mar-2017  
2
3
Datasheet promoted from preliminary data to production data.  
Modified title and features on cover page.  
Minor text changes.  
14/15  
DocID028557 Rev 3  

STL225N6F7AG  
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–
PLEASE READ CAREFULLY  
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, and  
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der  
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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.  
© 2017 STMicroelectronics
–
All rights reserved  
DocID028557 Rev 3  
15/15  

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Authorized Distributor  
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