STMicroelectronics-STL76DN4LF7AG
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STL76DN4LF7AG
Automotive-grade dual N-
channel 40 V, 5 mΩ typ., 40 A
STripFET™ F7 Power MOSFET in a PowerFLAT™ 5×6 DI
Datasheet – production data
Features
Order code
V
DS
R
DS(on)
max.
I
D
STL76DN4LF7AG
40 V
6 mΩ
40 A
AEC-Q101 qualified
Among the lowest R
DS(on)
on the market
Excellent FoM (figure of merit)
Low C
rss
/C
iss
ratio for EMI immunity
High avalanche ruggedness
Wettable flank package
Applications
Switching applications
Description
This dual N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
Figure 1: Internal schematic diagram
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
Table 1: Device summary
Package
PowerFLAT
TM
5×6 double island
Order code
Marking
Packing
STL76DN4LF7AG
76DN4LF7
Tape and reel
July 2017
DocID029186 Rev 5
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This is information on a product in full production.
Contents
STL76DN4LF7AG
Contents
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STL76DN4LF7AG
Electrical ratings
1
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
V
DS
Parameter
Value
40
Unit
V
Drain-source voltage
V
GS
Gate-source voltage
±20
40
V
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
c
= 100 °C
Drain current (pulsed)
A
40
A
160
71
A
P
TOT
T
j
Total dissipation at T
C
= 25 °C
Operating junction temperature range
Storage temperature range
W
-55 to 175
°C
T
stg
Notes:
(1)
Drain current is limited by package, the current capability of the silicon is 79 A at 25 °C and 56 A at 100 °C.
(2)
Pulse width limited by safe operating area.
Table 3: Thermal data
Symbol
Parameter
Thermal resistance junction-case
Thermal resistance junction-pcb
Value
2.1
Unit
°C/W
°C/W
R
thj-case
32
Notes:
(1)
When mounted on FR-4 board of 1 inch², 2oz Cu, t < 10 s.
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Electrical characteristics
STL76DN4LF7AG
2
Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Table 4: On/Off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown voltage
I
D
= 1 mA, V
GS
= 0 V
40
V
Zero gate voltage
V
GS
= 0 V
I
DSS
10
µA
drain current
V
DS
= 40 V
Gate-body leakage
I
GSS
V
GS
= ±20 V, V
DS
= 0 V
100
nA
V
current
V
GS(th)
R
DS(on)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= 10 V, I
D
= 10 A
V
GS
= 4.5 V, I
D
= 10 A
1.5
2.5
6
5
7
Static drain-source
on-resistance
mΩ
12
Table 5: Dynamic
Symbol
C
iss
Parameter
Input capacitance
Output capacitance
Test conditions
Min. Typ. Max. Unit
–
–
956
241
–
–
V
DS
= 25 V, f = 1 MHz,
V
GS
= 0 V
C
oss
pF
nC
Reverse transfer
capacitance
C
rss
–
28
–
Q
g
Total gate charge
V
DD
= 20 V, I
D
= 20 A,
–
–
17
–
–
Q
gs
Gate-source charge
3.2
Q
gd
Gate-drain charge
–
4.3
–
Table 6: Switching times
Test conditions
Symbol
t
d(on)
t
r
Parameter
Turn-on delay time
Rise time
Min. Typ. Max. Unit
V
DD
= 32 V, I
D
= 10 A,
–
–
–
9
–
–
–
R
G
= 4.7 Ω, V
GS
= 10 V (see
4.3
39
ns
t
d(off)
Turn-off delay time
t
f
Fall time
–
10
–
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STL76DN4LF7AG
Symbol
Electrical characteristics
Min. Typ. Max. Unit
Table 7: Source-drain diode
Test conditions
Parameter
Source-drain current
–
–
40
160
1.3
A
A
Source-drain current
(pulsed)
Forward on voltage
I
SD
= 40 A, V
GS
= 0 V
–
–
V
t
rr
Reverse recovery time
27
ns
I
SD
= 20 A, di/dt = 100 A/µs,
Reverse recovery
charge
19.5
Q
rr
–
–
nC
A
Reverse recovery
current
I
RRM
1.4
Notes:
(1)
Drain current is limited by package, the current capability of the silicon is 79 A at 25 °C.
(2)
Pulse width limited by safe operating area .
(3)
Pulsed: pulse duration = 300
μs, duty cycle 1.5%.
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Electrical characteristics
STL76DN4LF7AG
2.1
Electrical characteristics (curves)
Figure 2: Safe operating area
Figure 3: Thermal impedance
Figure 4: Output characteristics
Figure 5: Transfer characteristics
Figure 6: Gate charge vs gate-source voltage
Figure 7: Static drain-source on-resistance
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Figure 8: Capacitance variations
Electrical characteristics
Figure 9: Normalized gate threshold voltage vs
temperature
Figure 10: Normalized on-resistance vs temperature
Figure 11: Normalized V
(BR)DSS
vs temperature
Figure 12: Source-drain diode forward characteristics
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Test circuits
STL76DN4LF7AG
3
Test circuits
Figure 13: Test circuit for resistive load
switching times
Figure 14: Test circuit for gate charge
behavior
Figure 15: Test circuit for inductive load
switching and diode recovery times
Figure 16: Unclamped inductive load test
circuit
Figure 18: Switching time waveform
Figure 17: Unclamped inductive waveform
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Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
ECOPACK
®
is an ST trademark.
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Package information
STL76DN4LF7AG
4.1
PowerFLAT 5×6 double island WF type C package
information
Figure 19
: PowerFLAT™ 5×6 double island WF type C package outline
826945_DI_WF_typeC_r16
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STL76DN4LF7AG
Package information
Table 8: PowerFLAT™ 5×6 double island WF type C mechanical data
mm
Dim.
Min.
0.80
0.02
Typ.
Max.
1.00
0.05
A
A1
A2
b
0.25
0.30
5.80
5.00
4.15
4.05
4.80
0.25
0.15
1.68
0.50
6.10
5.40
4.45
4.35
5.10
0.55
0.45
1.98
C
6.00
5.20
D
D2
D3
D4
D5
D6
D7
e
4.20
5.00
0.40
0.30
1.27
6.40
E
6.20
3.50
2.35
0.40
0.08
0.20
0.85
0.55
4.00
3.55
0.90
0.175
1.05
0°
6.60
3.70
2.55
0.60
0.28
0.45
1.15
0.75
4.40
3.85
1.10
0.375
1.35
12°
E2
E3
E4
E5
E6
E7
E8
E9
E10
L
0.325
1.00
4.20
3.70
1.00
L1
K
0.275
ϴ
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Package information
STL76DN4LF7AG
Figure 20:
PowerFLAT™ 5×6 double island recommended footprint (dimensions are in mm)
8256945_FP_std_R16
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STL76DN4LF7AG
Package information
4.2
Packing information
Figure 21:
PowerFLAT™ 5×6 WF tape (dimensions are in mm)
Figure 22
: PowerFLAT™ 5×6 package orientation in carrier tape
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Package information
STL76DN4LF7AG
Figure 23
: PowerFLAT™ 5×6 reel (dimensions are in mm)
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STL76DN4LF7AG
Revision history
5
Revision history
Table 9: Document revision history
Changes
Date
Revision
20-Apr-2016
1
First release.
Modified: title, features and description in cover page.
Modified:
Table 4: “On/Off states”
,
Table 5: “Dynamic”
,
Table 6:
“Switching times”
and
Table 7: “Source-drain diode”
.
23-Jun-2016
2
Added:
Section 4.1: “Electrical characteristics (curves)”
.
Updated:
Section 6.1: “PowerFLAT 5×6 double island WF type C
package information”
.
Minor text changes
27-Jul-2016
16-Dec-2016
3
4
Updated
Table 4: “On/Off states”
.
Updated
Section 4: “Package information”
.
Minor text changes
Updated title and features in cover page.
27-Jul-2017
5
Document status updated from preliminary to production data.
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STL76DN4LF7AG
IMPORTANT NOTICE
–
PLEASE READ CAREFULLY
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, and
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der
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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
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–
All rights reserved
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