STMicroelectronics-STN1NK60Z
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STN1NK60Z,
STQ1NK60ZR
N-channel 600
V
, 13
Ω
typ., 0.3 A Zener-protected SuperMESH™
Power MOSFE
T
s
i
n SOT-223 and TO-92 packages
Datasheet
–
production data
Features
V
DS
R
DS(on)max
I
D
600 V
15
Ω
0.3 A
P
TOT
Order codes
4
STN1NK60Z
3.3 W
3 W
STQ1NK60ZR-AP
3
2
1
•
100% avalanche tested
SOT-223
TO-92 (Ammopak)
•
Extremely high dv/dt capability
•
Gate charge minimized
•
ESD improved capability
•
Zener-protected
Figure 1. Internal schematic diagram
Applications
D(2,4)
•
Switching applications
Description
These devices are N-channel Zener-protected
Power MOSFE
T
s
d
eveloped using
G(1)
STMicroelectronics’ SuperMESH™ technology,
achieved through optimization of ST’s well
established strip-based PowerMESH™ layout. In
addition to a significant reduction in on-
resistance, this device is designed to ensure a
high level of dv/dt capability for the most
demanding applications.
S(3)
AM01476v1
Table 1. Device summary
Order codes
Marking
Package
Packaging
STN1NK60Z
1NK60Z
SOT-223
TO-92
T
a
pe and reel
Ammopak
STQ1NK60ZR-AP
1NK60ZR
July 2014
DocID9509 Rev 14
1/18
This is information on a product in full production.
Contents
STN1NK60Z, STQ1NK60ZR
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
SOT-223, STN1NK60Z . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2/18
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STN1NK60Z, STQ1NK60ZR
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Value
Symbol
Parameter
SOT-223
Unit
TO-92
V
DS
V
GS
I
D
Drain-source voltage
600
± 30
0.3
V
V
A
A
A
Gate-source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
=100 °C
Drain current (pulsed)
I
D
0.189
1.2
(1)
I
DM
P
TOT
T
o
tal dissipation at T
C
= 25 °C
Derating factor
3.3
3
W
0.026
0.024
W/°C
Human body model
C=100 p
F
,
R
=1.5 k
Ω
ESD
800
4.5
V
dv/dt
(2)
T
J
Peak diode recovery voltage slope
Operating junction temperature
Storage temperature
V/ns
°C
– 55 to 150
T
stg
°C
1. Pulse
width limited by safe operating area
2.
≤
0.3 A, di/dt
≤
200 A/µs, V
= 80%V
(BR)DSS
I
SD
DD
Table 3. Thermal resistance
Parameter
Value
Symbol
Unit
SOT-223
TO-92
R
thj-amb
R
thj-lead
Thermal resistance junction-ambient max
Thermal resistance junction-lead max
38
(1)
120
40
°C/W
°C/W
1. When
mounted on 1 inch² FR-4 board, 2 Oz Cu, t < 30 s.
Table 4. Avalanche data
Parameter
Avalanche current, repetitive or not repetitive
(pulse width limited by T
j max
Symbol
Value
Unit
I
AR
0.3
A
)
Single pulse avalanche energy
E
AS
60
mJ
(starting T
J
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
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18
Electrical characteristics
STN1NK60Z, STQ1NK60ZR
2
Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
V
GS
= 0, I
D
= 1 mA
Min.
Typ. Max. Unit
Drain-source breakdown
voltage
V
(BR)DSS
600
V
V
GS
= 0, V
DS
=600 V
1
µA
µA
Zero gate voltage drain
current
I
DSS
V
GS
= 0, V
DS
=600
V
,
50
T
C
= 125 °C
I
GSS
V
DS
= 0, V
GS
= ± 20 V
V
DS
= V
GS
, I
D
= 50 µA
Gate body leakage current
Gate threshold voltage
±
10
µA
V
V
GS(th)
3
3.75
13
4.5
Static drain-source
on- resistance
R
DS(on)
V
GS
= 10 V, I
D
= 0.4 A
15
Ω
Table 6. Dynamic
Test conditions
Symbol
Parameter
Min.
Typ. Max.
Unit
(1)
V
DS
=15
V
, I
D
= 0.4 A
Forward transconductance
Input capacitance
–
–
–
0.5
94
S
g
fs
C
iss
pF
pF
V
GS
= 0, V
DS
= 25 V,
C
oss
Output capacitance
17.6
f=1 MHz
Reverse transfer
capacitance
C
rss
–
–
2.8
11
pF
pF
Equivalent output
capacitance
(2)
V
GS
= 0, V
DS
= 0 to 480 V
C
oss eq
.
Q
g
Q
gs
Q
gd
T
o
tal gate charge
Gate-source charge
Gate-drain charge
–
–
–
4.9
1
6.9
nC
nC
nC
V
DD
=480
V
,
I
D
= 0.8 A
V
GS
=10 V
2.7
1. Pulsed:
pulse duration=300µs, duty cycle 1.5%
2. is
defined as a constant equivalent capacitance giving the same charging time as C
C
when V
DS
oss eq.
oss
increases from 0 to 80% V
DSS
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STN1NK60Z, STQ1NK60ZR
Electrical characteristics
Min. Typ. Max. Unit
Table 7. Switching times
Test conditions
Symbol
t
d(on)
t
r
t
d(off)
t
f
Parameter
Turn-on delay time
Rise time
–
–
–
–
5.5
5
–
–
–
–
ns
ns
ns
ns
V
DD
= 300 V, I
D
= 0.4 A,
R
G
= 4.7
Ω,
V
GS
= 10 V
Turn-off delay time
Fall time
13
28
Table 8. Source drain diode
Test conditions
Symbol
Parameter
Min.
Typ. Max. Unit
I
SD
Source-drain current
–
–
0.8
2.4
1.6
A
A
(1)
Source-drain current (pulsed)
I
SDM
(2)
V
GS
=0, I
SD
= 0.8 A
SD
= 0.8 A,
Forward on voltage
–
–
–
–
–
–
–
V
ns
nC
A
V
SD
t
rr
Q
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
135
216
3.2
I
di/dt = 100 A/µs,
V
DD
= 20 V
I
RRM
t
rr
140
224
3.2
ns
nC
A
I
SD
= 0.8 A,
Q
rr
di/dt = 100 A/µs,
V
DD
= 20V, Tj = 150 °C
I
RRM
1. Pulse
width limited by safe operating area.
2. Pulsed:
pulse duration=300µs, duty cycle 1.5%
Table 9. Gate-source Zener diode
Parameter Test
conditions
V
(BR)GSO
Gate-source breakdown voltage
I
GS
= ± 1mA, I
D
=0
Symbol
Min Typ.
Max. Unit
30
–
–
V
The built-in back-to-back Zener diodes have specifically been designed to enhance the
device’s ESD capability. In this respect the Zener voltage is appropriate to achieve an
efficient and cost-effective intervention to protect the device’s integrity. These integrated
Zener diodes thus avoid the usage of external components.
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18
Electrical characteristics
STN1NK60Z, STQ1NK60ZR
2.1
Electrical characteristics (curves)
Figure 2. Safe operating area for SOT-223
Figure 3. Thermal impedance for SOT-223
SO
T
–
223
K
δ
=0.5
0.2
0.1
0.05
10
-1
0.02
t < 30s
0.01
Zthj-pcb=K*Rthj-pcb,
Rthj-pcb=62.5°C/W
Single pulse
10
-2
10
-3
10
0
10
2
10
-2
10
1
10
-1
p
(s)
t
Figure 4. Safe operating area for TO-92
Figure 5. Thermal impedance for TO-92
Figure 6. Output characteristics
Figure 7. Transfer characteristics
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STN1NK60Z, STQ1NK60ZR
Electrical characteristics
Figure 8. Transconductance
Figure 9. Static drain-source on-resistance
Figure 10. Gate charge vs gate-source voltage
Figure 11. Capacitance variations
Figure 12. Normalized gate threshold voltage vs
temperature
Figure 13. Normalized on-resistance vs
temperature
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18
Electrical characteristics
STN1NK60Z, STQ1NK60ZR
Figure 14. Source-drain diode forward
characteristics
Figure 15. Normalized V
BR(DSS)
vs temperature
BR(DSS)
Figure 16. Maximum avalanche energy vs
temperature
Figure 17. Max Id current vs Tc
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STN1NK60Z, STQ1NK60ZR
Test circuits
3
Test circuits
Figure 18. Switching times test circuit for
resistive load
Figure 19. Gate charge test circuit
V
DD
12V
47k
Ω
1k
Ω
100nF
2200
μ
F
3.3
μ
F
R
L
I
G
=CONST
V
DD
100
Ω
V
i
=20V=V
GMAX
D.U.T.
V
D
R
G
V
GS
2200
μ
F
D.U.T.
V
G
2.7k
Ω
47k
Ω
P
W
1k
Ω
P
W
AM01468v1
AM01469v1
Figure 20. Test circuit for inductive load
switching and diode recovery times
Figure 21. Unclamped inductive load test circuit
L
A
A
A
B
D
S
FAST
DIODE
L=100
μ
H
V
D
G
2200
μ
F
D.U.T.
B
3.3
μ
F
V
DD
3.3
μ
F
1000
μ
F
B
V
DD
25
Ω
I
D
D
G
R
G
S
V
i
D.U.T.
P
w
AM01470v1
AM01471v1
Figure 22. Unclamped inductive waveform
Figure 23. Switching time waveform
t
on
t
off
td
off
V
(BR)DSS
t
r
t
f
td
on
V
D
90%
10%
90%
I
DM
10%
V
GS
V
DS
I
D
0
0
V
DD
V
DD
90%
10%
AM01472v1
AM01473v1
DocID9509 Rev 14
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18
Package mechanical data
STN1NK60Z, STQ1NK60ZR
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
ECOPACK
®
is an ST trademark.
10/18
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STN1NK60Z, STQ1NK60ZR
Package mechanical data
Figure 24. SOT-223 mechanical data drawing
0046067_N
Table 10. SOT-223 mechanical data
mm
Dim.
Min.
Typ.
Max.
A
A1
B
1.80
0.10
0.85
3.15
0.35
6.70
6.70
0.02
0.60
2.9
0.70
3.0
B1
c
0.24
6.30
0.26
6.50
2.30
4.60
3.50
7.0
D
e
e1
E
3.30
6.70
3.70
7.30
10°
H
V
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18
Package mechanical data
STN1NK60Z, STQ1NK60ZR
Figure 25. SOT-223 footprint (dimensions in mm)
0046067_N_footprint
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STN1NK60Z, STQ1NK60ZR
Package mechanical data
4.1
4.2
SOT-223, STN1NK60Z
TO-92 ammopack, STQ1NK60ZR-AP
Figure 26. TO-92 ammopack mechanical data drawing
T
A1
T2
T1
H1
delta H
W2
H
H3
H0
d
L
l1
W
W0
W1
F1 F2
F3
D0
t
P2
P0
0050910S_Rev_U
DocID9509 Rev 14
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18
Package mechanical data
STN1NK60Z, STQ1NK60ZR
Table 11. TO-92 ammopack mechanical data
mm
Dim.
Min.
Typ.
Max.
A1
T
4.80
3.80
1.60
2.30
0.48
12.90
7.05
2.94
5.48
2.00
19.00
6.5
T1
T2
d
0.45
12.50
5.65
2.40
4.98
-2.00
17.50
5.5
0.47
12.70
6.35
2.50
5.08
P0
P2
F1, F2
F3
delta H
W
18.00
6.00
9.00
W0
W1
W2
H
8.50
9.25
0.50
21
18.50
1
H3
H0
H1
D0
t
0.5
2
15.50
16.00
25.0
4.00
18.8
27.0
4.20
0.90
11.00
3.80
L
l1
3.00
delta P
-1.00
1.00
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STN1NK60Z, STQ1NK60ZR
Packaging mechanical data
5
Packaging mechanical data
Figure 27. Tape for SOT-223 (dimensions are in mm)
Cumulative tolerance of 10 sprocket holes is ±0.20 mm
*
Figure 28. Reel for TO-223 (dimensions are in mm)
DocID9509 Rev 14
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18
Packaging mechanical data
STN1NK60Z, STQ1NK60ZR
Table 12. SOT-223 tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Typ.
Max.
Min.
Max.
A0
B0
K0
F
6.75
7.30
1.80
5.40
1.65
11.7
1.90
3.90
7.90
0.25
1.50
1.50
6.85
7.40
1.90
5.50
1.75
12
6.95
7.50
2.00
5.60
1.85
12.3
2.10
4.10
8.10
0.35
1.60
1.70
A
180
N
60
W1
W2
W3
12.4
18.4
15.4
E
11.9
W
P2
P0
P1
T
2
Base quantity pcs
Bulk quantity pcs
1000
1000
4
8
0.30
1.55
1.60
D
φ
D1
φ
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STN1NK60Z, STQ1NK60ZR
Revision history
6
Revision history
Table 13. Revision history
Changes
Date
Revision
19-Mar-2003
15-May-2003
09-Jun-2003
17-Nov-2004
15-Feb-2005
07-Sep-2005
22-Feb-2006
01-Jun-2007
19-Jul-2007
3
4
First electronic version
Removed DPAK
5
Final datasheet
6
Inserted SOT-223
7
8
Inserted ecopack indication
The document has been reformatted
Order code table on first page has been updated
9
10
11
05-Jan-2011
12
– Updated title.
– Minor text changes.
05-Jun-2014
04-Jul-2014
13
14
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18
STN1NK60Z, STQ1NK60ZR
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